UC 8447
Abstract: Rubycon zl BOOT ENB TSET GND FB VBIAS LX VIN
Text: 8447 Hi Voltage Step Down Regulator FEATURES n 8-50V Input Range n Integrated DMOS Switch n Adjustable Fixed off-time n Highly Efficient n Adjustable 0.8-24V output The A8447 is a step down regulator that will handle a wide input operating voltage range. The A8447 is supplied in a low profile 8 lead SOIC with
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A8447
220uF
UC 8447
Rubycon zl
BOOT ENB TSET GND FB VBIAS LX VIN
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AC Transformer 50A 100V
Abstract: No abstract text available
Text: IRLH7134PbF HEXFET Power MOSFET VDS 40 V RDS on max 3.3 mΩ 39 nC (@VGS = 10V) Qg (typical) ID 50 (@Tc(Bottom) = 25°C) i A PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications
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IRLH7134PbF
IRLH7134TRPBF
IRLH7134TR2PBF
AC Transformer 50A 100V
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Untitled
Abstract: No abstract text available
Text: IRFH8318PbF HEXFET Power MOSFET VDS 30 ± 20 Vgs max RDS on max V V 3.1 (@VGS = 10V) (@VGS = 4.5V) 4.6 Qg typ 19 ID (@Tc(Bottom) = 25°C) 50 mΩ nC i PQFN 5X6 mm A Applications • Synchronous MOSFET for high frequency buck converters Features and Benefits
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IRFH8318PbF
IRFH8318TRPBF
IRFH8318TR2PBF
Compatibil90Â
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Untitled
Abstract: No abstract text available
Text: IRFH8316PbF HEXFET Power MOSFET VDS 30 ± 20 Vgs max RDS on max V V 2.95 (@VGS = 10V) (@VGS = 4.5V) 4.30 Qg typ 30.0 ID (@Tc(Bottom) = 25°C) 50 mΩ nC i PQFN 5X6 mm A Applications • Synchronous MOSFET for high frequency buck converters Features and Benefits
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IRFH8316PbF
IRFH8316TRPBF
IRFH8316TR2PBF
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SMP1321
Abstract: SMP1321-005 SMP1321-074 SMP1321-508
Text: DATA SHEET SMP1321 Series: Low Capacitance, Plastic Packaged PIN Diodes Applications • High-performance wireless switches WLAN 802.11 a/b/g systems SMP1321-508 Features Capacitance: 0.25 pF Packages rated MSL1, 260 C per JEDEC J-STD-020
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SMP1321
SMP1321-508)
J-STD-020
200048H
SMP1321-005
SMP1321-074
SMP1321-508
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Untitled
Abstract: No abstract text available
Text: IRFH7110PbF HEXFET Power MOSFET VDS Vgs max RDS on max (@VGS = 10V) QG (typical) RG (typical) ID (@Tc(Bottom) = 25°C) 100 ± 20 V V 13.5 mΩ 58 0.6 nC 50 Ω i PQFN 5X6 mm A Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors
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IRFH7110PbF
IRFH7110TRPBF
IRFH7110TR2PBF
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74V2G00
Abstract: 74V2G132 74V2G132CTR 74V2G132STR
Text: 74V2G132 DUAL 2-INPUT SHMITT TRIGGER NAND GATE PRELIMINARY DATA • ■ ■ ■ ■ ■ ■ ■ HIGH SPEED: tPD = 3.0ns TYP. at VCC = 5V LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C TYPICAL HYSTERESIS: VH = 800mV at VCC = 4.5V VH = 500mV at VCC = 3.0V
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74V2G132
800mV
500mV
74V2G132
74V2G00
74V2G132CTR
74V2G132STR
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Untitled
Abstract: No abstract text available
Text: APM2324A N-Channel Enhancement Mode MOSFET Pin Description Features • 20V/3A , D RDS ON =50mΩ(typ.) @ VGS=4.5V RDS(ON)=90mΩ(typ.) @ VGS=2.5V • • • G Super High Dense Cell Design S Reliable and Rugged Lead Free Available (RoHS Compliant) Top View of SOT-23
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APM2324A
OT-23
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74V2G00
Abstract: 74V2G132 74V2G132CTR 74V2G132STR
Text: 74V2G132 DUAL 2-INPUT SHMITT TRIGGER NAND GATE PRELIMINARY DATA • ■ ■ ■ ■ ■ ■ ■ HIGH SPEED: tPD = 3.0ns TYP. at VCC = 5V LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C TYPICAL HYSTERESIS: VH = 800mV at VCC = 4.5V VH = 500mV at VCC = 3.0V
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74V2G132
800mV
500mV
74V2G132
74V2G00
74V2G132CTR
74V2G132STR
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74V2G00
Abstract: No abstract text available
Text: 74V2G132 DUAL 2-INPUT SHMITT TRIGGER NAND GATE PRELIMINARY DATA • ■ ■ ■ ■ ■ ■ ■ HIGH SPEED: tPD = 3.0ns TYP. at VCC = 5V LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C TYPICAL HYSTERESIS: VH = 800mV at VCC = 4.5V VH = 500mV at VCC = 3.0V
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74V2G132
800mV
500mV
OT23-8L
OT323-8L
OT23-8L
OT323-8L
74V2G132STR
74V2G132CTR
V2G132
74V2G00
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Untitled
Abstract: No abstract text available
Text: U7006B DECT SiGe Front End IC Description The U7006B is a monolithic SiGe transmit/receive front end IC with power amplifier, internally 50-O matched, low-noise amplifier and T/R switch driver. It is especially designed for operation in TDMA systems like DECT. Due
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U7006B
U7006B
D-74025
09-Nov-99
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th 9428
Abstract: 9428 A102 APM9428 and/gi 9428
Text: APM9428 N-Channel Enhancement Mode MOSFET Features • Pin Description 20V/6A, RDS ON = 25mΩ(typ.) @ VGS = 4.5V RDS(ON) = 50mΩ(typ.) @ VGS = 2.5V • • • Super High Density Cell Design Reliable and Rugged SO-8 Package S 1 8 D S 2 7 D S 3 6 D G 4 5
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APM9428
th 9428
9428
A102
APM9428
and/gi 9428
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APM3006N
Abstract: APM3006NU APM3006 STD-020C
Text: APM3006NU N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/50A, RDS ON =4.8mΩ (typ.) @ VGS=10V RDS(ON)=7mΩ (typ.) @ VGS=4.5V • • • Super High Dense Cell Design Top View of TO-252 Reliable and Rugged Lead Free Available (RoHS Compliant)
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APM3006NU
0V/50A,
O-252
APM3006N
APM3006N
APM3006NU
APM3006
STD-020C
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APM2800B
Abstract: STD-020C SOT-23-5 MARKING VF
Text: APM2800B N-Channel Enhancement Mode MOSFET with Schottky Diode Pin Description Features MOSFET • 20V/3A , RDS ON =50mΩ(typ.) @ VGS=4.5V RDS(ON)=90mΩ(typ.) @ VGS=2.5V • • • Super High Dense Cell Design Top View of SOT-25 Reliable and Rugged (5)
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APM2800B
OT-25
OT-23-5
APM2800B
STD-020C
SOT-23-5 MARKING VF
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smda15c
Abstract: marking sdk SMDB15
Text: fl SMDA03 PROlEK DEVICES iR i^i/vïe for + -Ko t-n onoiani" onvyirw ime Engineered solutions the transient environment thru SMDB24C TVS DIODE ARRAY APPLICATIONS • • • • • IEC 1000-4 COMPATIBLE RS-232, RS-422 & RS-423 Data Lines Cellular Phones Audio/ Video Inputs
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SMDA03
SMDB24C
RS-232,
RS-422
RS-423
SMDA05
SMDA08
SMDA12
SMDA15
smda15c
marking sdk
SMDB15
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transistor BD 512
Abstract: transistor kt 801 transistor kt Diode KD 202 junost 603 kt801b GT 404 GT313B MP 41 transistor MP42A
Text: Mau« Import - Geräte Bewdetisoher s/w-gernsehkofferempfänKor " J ü M 0 S T 603 Hit dam Import dos linksseitig skizzier ten Fernsehportable aus dsr Sowjetunion vird die s.Z. in dieser Geräteklasse be stehende liarktlüoke geschlossen. Das Gerät ist für den Bmpfang aller Fern
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12-VAkku
/50Hz
III/18/379
transistor BD 512
transistor kt 801
transistor kt
Diode KD 202
junost 603
kt801b
GT 404
GT313B
MP 41 transistor
MP42A
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tc9406f
Abstract: TC9405F GV 475 diode pine kd TA2066F TA2066FN TC9296AF
Text: TO SH IBA TA2066F/FN TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA2066F, TA2066FN RF AMPLIFIER FOR DIGITAL SERVO CD SYSTEM TA2066F/FN is a 3-beam type PUH compatible RF Am plifier to be used in the CD system. In combination with a CMOS single chip processor
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TA2066F/FN
TA2066F,
TA2066FN
TA2066F/FN
TC9296AF
/TC9405F
/TC9406F,
TC9296AF/
TC9405F/TC9406F
SSOP24-P-310
tc9406f
TC9405F
GV 475 diode
pine kd
TA2066F
TA2066FN
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tc9405f
Abstract: tc9406f pine kd TA2066F TA2066FN TC9296AF 3-beam system diode kO 4 50 TC9405F/TC9406F
Text: TO SH IBA TA2066F/FN TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA2066F, TA2066FN RF AMPLIFIER FOR DIGITAL SERVO CD SYSTEM TA2066F/FN is a 3-beam type PUH compatible RF Am plifier to be used in the CD system. In combination with a CMOS single chip processor
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TA2066F/FN
TA2066F,
TA2066FN
TA2066F/FN
TA2066F
TC9296AF
/TC9405F
/TC9406F,
SSOP24-P-300-1
tc9405f
tc9406f
pine kd
TA2066F
TA2066FN
3-beam system
diode kO 4 50
TC9405F/TC9406F
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diode dgp 30
Abstract: schematics for a PA amplifier schematics for a PA amplifier class c U7006B U7006B-MLB U7006B-MLBG3
Text: Tem ic U7006B Semiconductors DECT SiGe Front End IC Description The U7006B is a monolithic SiGe transmit/receive front end IC with power amplifier, internally 50-0 matched, low-noise amplifier and T/R switch driver. It is especially designed for operation in TDMA systems like DECT. Due
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u7006b
U7006B
19-Jan-00
PSSOP16
diode dgp 30
schematics for a PA amplifier
schematics for a PA amplifier class c
U7006B-MLB
U7006B-MLBG3
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Untitled
Abstract: No abstract text available
Text: isocon COnPONENTS LTD Jb • 7SC 4flflbSlQ DOOOlflB 17b • ISO D 3 SFH601 -1, SFH601 -2, SFH601 -3. SFH601-4, SFH601-5 OPTICALLY COUPLED ISOLATORS IS0C0Mf INC. 274 E. HAMILTON AVE. SUITE F CAMPBELL, CA. 95008 ABSOLUTE MAXIMUM RATINGS 25°C unless otherwise noted
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SFH601
SFH601-4,
SFH601-5
SFH601-1
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D 13007 K
Abstract: schematics for a PA amplifier U7004B 13007 TRANSISTOR D 13007 T 13007 U7004B-MFS U7004B-MFSG3 class h power amplifier hi power schematic
Text: Temic U7004B S e m i c o n d u c t o r s DECT SiGe Front End IC Description The U7004B is a monolithic SiGe transmit/receive front end IC with power amplifier, internally 50-0 matched, low-noise amplifier and T/R switch driver. It is especially designed for operation in TDMA systems like DECT. Due
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u7004b
U7004B
19-Jan-00
56plnlu
D 13007 K
schematics for a PA amplifier
13007 TRANSISTOR
D 13007
T 13007
U7004B-MFS
U7004B-MFSG3
class h power amplifier hi power schematic
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SOT23L-6
Abstract: SOT23L
Text: TO KO INTEGRATED C IR C U ITS DC-DC converter ICs Yi DC-DC 3 50 •BbâEâfe —-S? 1C Features • Low voltage operation. 0.6V- • variable output 1.5-15V • B u ilt-in re ctifie r diode. • Small package (SOT23L-6) TK11812M (0.6V ~ ) 1.5V ~ 15V mm#*-
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OT23L-6)
TK11812M
TK11816M/TK11817M
TK11818M/TK11819ecifications
TK11822M
TK11823M
TK65025M
SOT23L-6
SOT23L
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TC9284AF
Abstract: tc9236 TC9236AF kd 617 TA2065F TS20 FPI43
Text: TOSHIBA TENTATIVE TA2065F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT TA2065I SILICON MONOLITHIC • CD FOCUS TRACKING SERVO LSI The TA2065F is a 3-beam type PUH com patible focus tracking servo LSI to be used in the CD player system. In com bination w ith a CMOS single chip processor
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TA2065F
TA2065F
TC9236AF
/TC9263AF
/TC9283F
/TC9284AF,
QFP48-P-1014-0
TC9284AF
tc9236
kd 617
TS20
FPI43
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Untitled
Abstract: No abstract text available
Text: M A X I M U M R A T IN G S EACH DIODE Rating Reverse Voltage Sym bol Value VR 70 Vdc If 200 mAdc *FM(surae| 500 mAdc Symbol Max Unit Pd 225 mW 1.8 m w rc r 0JA 556 °c/w Pd 300 mW 2.4 mW/°C R8JA 417 °C/W TJ ' Tsta - 55 to + 150 °C Forward Current Peak Forward Surge Current
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BAV70LT1*
OT-23
O-236AB)
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