Untitled
Abstract: No abstract text available
Text: IRFH8316PbF HEXFET Power MOSFET VDS 30 ± 20 Vgs max RDS on max V V 2.95 (@VGS = 10V) (@VGS = 4.5V) 4.30 Qg typ 30.0 ID 50 (@Tc(Bottom) = 25°C) m nC i PQFN 5X6 mm A Applications •Synchronous MOSFET for high frequency buck converters Features and Benefits
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Original
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IRFH8316PbF
IRFH8316TRPBF
IRFH8316TR2PBF
796mH,
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PDF
|
Untitled
Abstract: No abstract text available
Text: IRFH8316PbF HEXFET Power MOSFET VDS 30 ± 20 Vgs max RDS on max V V 2.95 (@VGS = 10V) (@VGS = 4.5V) 4.30 Qg typ 30.0 ID (@Tc(Bottom) = 25°C) 50 mΩ nC i PQFN 5X6 mm A Applications • Synchronous MOSFET for high frequency buck converters Features and Benefits
|
Original
|
IRFH8316PbF
IRFH8316TRPBF
IRFH8316TR2PBF
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRFH8316PbF HEXFET Power MOSFET VDS 30 ± 20 Vgs max RDS on max V V 2.95 (@VGS = 10V) (@VGS = 4.5V) 4.30 Qg typ 30.0 ID 50 (@Tc(Bottom) = 25°C) m nC i PQFN 5X6 mm A Applications •Synchronous MOSFET for high frequency buck converters Features and Benefits
|
Original
|
IRFH8316PbF
IRFH8316TRPBF
IRFH8316TR2PBF
796mH,
|
PDF
|