K7252M
Abstract: BA582 BC848 SW01 smd 2a 3 PIN saw tv if filters 200KC
Text: Switchable Filter K7252 Application Notes Author: Updated: Department: Fröhlich 24.4.98 OFW E UE Abstract: K7252M features two separate modes in a single SIP5K package: A D/K,B/G channel, predistorted group delay, or a M/N channel with flat group delay optimized
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K7252
K7252M
K7252M
K7252M,
K7252M;
90MHz:
47MHz:
40MHz:
BA582
BC848
SW01
smd 2a 3 PIN
saw tv if filters
200KC
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mosfet k72
Abstract: k72 diode K72 marking diode k72 mosfet I-S115 marking K72
Text: 2N7002W Mosfet N-Channel SOT-323 1. GATE 2. SOURCE 3. DRAIN Features High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability Marking: K72 Dimensions in inches and (millimeters)
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2N7002W
OT-323
500mA
mosfet k72
k72 diode
K72 marking diode
k72 mosfet
I-S115
marking K72
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AEC-Q100 optocoupler
Abstract: K72T
Text: ACPL-K71T, ACPL-K72T, ACPL-K74T and ACPL-K75T Automotive High Speed Low Power Digital Optocouplers with R2CouplerTM Isolation and AEC-Q100 Grade 1 Qualification Data Sheet Lead Pb Free RoHS 6 fully compliant RoHS 6 fully compliant options available; -xxxE denotes a lead-free product
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ACPL-K71T,
ACPL-K72T,
ACPL-K74T
ACPL-K75T
AEC-Q100
ACPL-K71T
ACPL-K72T
ACPL-K75T
AEC-Q100 optocoupler
K72T
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transistor NEC K2500
Abstract: nec k2500 NEC K2500 Transistor component NEC K2500 mosfet CD4558 cq met t3.15A 250V k2500 N-Channel MOSFET c5042f TO-92 78L05 voltage regulator pin configuration i ball 450 watt smps repairing
Text: A merican Gaming and Electronics, Inc. represents over 200 vendors and carries thousands of items. This catalog is just a partial listing of our products. If for any reason, you do not see the item s you are searching for, please call your local sales representative. The sales
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2N7002KW
Abstract: MosFET
Text: 2N7002KW 115mA , 60V, RDS ON 4 N-Ch Small Signal MOSFET with ESD Protection Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-323 RDS(ON), VGS@10V, IDS@500mA=3
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2N7002KW
115mA
OT-323
500mA
200mA
2002/95/EC
31-Mar-2011
2N7002KW
MosFET
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2N7002K
Abstract: MosFET
Text: 2N7002K 0.3A , 60V , RDS ON 4 N-Ch Small Signal MOSFET with ESD Protection Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-23 RDS(ON), VGS@10V, IDS@500mA=3
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2N7002K
OT-23
500mA
200mA
2002/95/EC
30-Mar-2011
2N7002K
MosFET
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IXGP70N33
Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250
Text: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim
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D-68623
IXBOD1-08
IXBOD1-09
IXBOD1-10
DSEP30-06BR
DSEP30-12CR
IXGP70N33
IXGQ90N33
SK0604
IXTP76N075
IXER35N120D1
IXGP70N33TBM-A
DH60-18A
VBO19
SK0712
IXTH1N250
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k72 diode
Abstract: mosfet k72 K72 sot k72 transistor transistor k72 702 marking code transistor marking k72 k72 device marking marking k72 2N7002W
Text: 2N7002W 115 mAMPS, 60VOLTS, RDS on =7.5 Small Signal MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free N–Channel SOT–323 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage (RGS = 1.0 MΩ)
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2N7002W
60VOLTS,
01-Jun-2005
k72 diode
mosfet k72
K72 sot
k72 transistor
transistor k72
702 marking code
transistor marking k72
k72 device marking
marking k72
2N7002W
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LT2N7002E
Abstract: code k72 k72 diode mosfet k72 LT2N7002
Text: LT2N7002E N-Channel Power MOSFET – ESD GENERAL DESCRIPTION FEATURES The LT2N7002E is the N-Channel logic enhancement mode power ● Simple Drive Requirement field effect transistors are produced using high cell density , DMOS ● Small Package Outline trench technology. This high density process is especially tailored to
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LT2N7002E
LT2N7002E
200mA,
OT-23
code k72
k72 diode
mosfet k72
LT2N7002
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Marking Code k72
Abstract: k72 diode K72 marking diode K72 MARKING SOT-23
Text: LT2N7002E N-Channel Power MOSFET – ESD GENERAL DESCRIPTION FEATURES The LT2N7002E is the N-Channel logic enhancement mode power ● Simple Drive Requirement field effect transistors are produced using high cell density, DMOS ● Small Package Outline trench technology. This high density process is especially tailored to
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LT2N7002E
LT2N7002E
200mA
200mA,
OT-23
Marking Code k72
k72 diode
K72 marking diode
K72 MARKING SOT-23
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Marking Code k72
Abstract: code k72 k72 diode K72 marking diode LT2N7002D
Text: LT2N7002D N-Channel Power MOSFET – ESD GENERAL DESCRIPTION FEATURES The LT2N7002D is the N-Channel logic enhancement mode power ● Simple Drive Requirement field effect transistors are produced using high cell density , DMOS ● Small Package Outline trench technology. This high density process is especially tailored to
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LT2N7002D
LT2N7002D
200mA
200mA,
OT-23
Marking Code k72
code k72
k72 diode
K72 marking diode
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LPC 836 red laser diode
Abstract: LPC 826 red laser diode CN802 PWB 826 service manual transistor N14 193 K2EEYB000001 CN603 DL3U21518AAA toshiba dvd hdd schematic diagram ic 804
Text: ORDER NO. CPD0603050C1 Notebook Computer CF-74 This is the Service Manual for the following areas. M …for U.S.A. and Canada Model No. CF-74CCBAXBM 2006 Matsushita Electric Industrial Co., Ltd. All rights reserved. Unauthorized copying and distribution is a violation of law.
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CPD0603050C1
CF-74
CF-74CCBAXBM
EN60825
CF-74
LPC 836 red laser diode
LPC 826 red laser diode
CN802
PWB 826 service manual
transistor N14 193
K2EEYB000001
CN603
DL3U21518AAA
toshiba dvd hdd schematic diagram
ic 804
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mosfet k72
Abstract: Marking Code k72 k72 diode LT2N7002E k72 sot 23 code k72 N-channel Power MOSFET
Text: LT2N7002E N-Channel Power MOSFET – ESD GENERAL DESCRIPTION FEATURES The LT2N7002E is the N-Channel logic enhancement mode power ● Simple Drive Requirement field effect transistors are produced using high cell density, DMOS ● Small Package Outline trench technology. This high density process is especially tailored to
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LT2N7002E
LT2N7002E
mosfet k72
Marking Code k72
k72 diode
k72 sot 23
code k72
N-channel Power MOSFET
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JESD22-A108C
Abstract: JESD22-A108-C JESD22A-101-B
Text: Formosa MS N-Channel MOSFET ESD Protection 2N7002K List List. 1 Package outline. 2
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2N7002K
1000hours
JESD22-A108-C
JESD22-B102-D
168hours
JESD22-A102-C
10min
10min
JESD22-A104-B
JESD22-A108C
JESD22-A108-C
JESD22A-101-B
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Untitled
Abstract: No abstract text available
Text: Formosa MS ESD N-Channel SMD MOSFET 2N7002K List List. 1 Package outline. 2 Features. 2
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2N7002K
METHOD-1027
500hrs.
MIL-STD-750D
METHOD-1051
METHOD-1056
1000hrs.
METHOD-1038
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k72 diode
Abstract: mosfet k72 K72 marking diode DS30120 Rev. 14
Text: 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) max ID max TA = 25°C 60V 7.5Ω @ VGS = 5V 0.23A • • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage
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2N7002DW
AEC-Q101
DS30120
k72 diode
mosfet k72
K72 marking diode
DS30120 Rev. 14
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Untitled
Abstract: No abstract text available
Text: 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) max ID max TA = 25°C 60V 7.5Ω @ VGS = 5V 0.23A • • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage
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2N7002DW
AEC-Q101
DS30120
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETS 2N7002DW SOT-363 SOT-363 MOSFET N-Channel FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability
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OT-363
2N7002DW
OT-363
500mA
200mA
115mA,
500mA
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate MOSFETS 2N7002T MOSFET N-Channel SOT-523 FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability
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OT-523
2N7002T
OT-523
500mA
200mA
115mA,
500mA
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETS 2N7002DW SOT-363 SOT-363 MOSFET N-Channel FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability
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OT-363
2N7002DW
OT-363
500mA
200mA
115mA,
500mA
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors 2N7002W MOSFET N-Channel SOT-323 FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability
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OT-323
2N7002W
OT-323
200mA
500mA
115mA,
500mA
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate MOSFETS 2N7002T MOSFET N-Channel SOT-523 FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability
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OT-523
2N7002T
OT-523
500mA
200mA
115mA,
500mA
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETS 2N7002DW SOT-363 SOT-363 MOSFET N-Channel FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability
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OT-363
2N7002DW
OT-363
500mA
115mA,
200mA
500mA
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H0A0872-n55
Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
Text: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1
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OCR Scan
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1N5722
1N5723
1N5724
1N5725
1N6264
1N6265
1N6266
2004-90xx
2600-70XX
2N5777-80
H0A0872-n55
H0A1405-1
H0A0865-L51
h0a1405
HOA708-1
HOA9
til78 phototransistor
MOC70T3
ir diode TIL38
H0A1874-12
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