Untitled
Abstract: No abstract text available
Text: TS4148 RXG CREAT BY ART Taiwan Semiconductor Small Signal Product 500mW High Speed SMD Switching Diode FEATURES - Designed for mounting on small surface - Extremely thin/leadless package - High mounting capability, strong surage with stand, high reliability
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TS4148
500mW
MIL-STD-750,
260oC/10s
S1404020
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TS4148
Abstract: No abstract text available
Text: TS4148 RYG CREAT BY ART Taiwan Semiconductor Small Signal Product 500mW High Speed SMD Switching Diode FEATURES - Designed for mounting on small surface - Extremely thin/leadless package - High mounting capability, strong surage with stand, high reliability
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TS4148
500mW
MIL-STD-750,
260oC/10s
S1407005
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Untitled
Abstract: No abstract text available
Text: SKHI 23/12 R . power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions ?.1C3 '7 69CH G.H 69CKK G.H jCA=*BA310 ;CB
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OCAP30
LCAB30-1N
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thermistor k275
Abstract: J955 k365 IC K520 K615 k620 k275 k245 transistor F370 k355
Text: Sumitomo Electric Industries, Ltd. Part No. : SLT548x-xA Series Document No. : HUW0025006-01C Date of issue : January 31, 2002 Technical Specification of 1.5µm Tunable Laser Diode Module for WDM External Modulation ~ 8 Channels , 10mW ~ SLT548x-xA Series
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SLT548x-xA
HUW0025006-01C
50GHz
IRO-D01002
July/26/2001
thermistor k275
J955
k365
IC K520
K615
k620
k275
k245
transistor F370
k355
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thermistor k275
Abstract: k355 k185 J955 k535 J780 J945 J965 K195 k540
Text: Sumitomo Electric Industries, Ltd. Part No. : SLT548x-xB Series Document No. : HUW0025007-01C Date of issue : January 31, 2002 Technical Specification of 1.5µm Tunable Laser Diode Module for WDM External Modulation ~ 8 Channels , 20mW ~ SLT548x-xB Series
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SLT548x-xB
HUW0025007-01C
50GHz
IRO-D01002
July/2/2001
thermistor k275
k355
k185
J955
k535
J780
J945
J965
K195
k540
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SKM75GB120D
Abstract: cmos open collector and gate SKHI 65 SKM75GB12 igbt driver SKHI 23/12 semikron SKHI 22 SEMIKRON SKHI 65 SKHI23 FERRITE TRANSFORMER igbt 6.5 kv snubber
Text: SKHI 23/12 R . power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions 7 J $) () $, () K$" #" $# E%%
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c5088 transistor
Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154
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1853IMPATT
c5088 transistor
transistor C3207
TLO84CN
sec c5088
IN5355B
D2817A
C3207 transistor
toshiba f630
TLO81CP
MC74HC533N
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new bright R288-2
Abstract: 24c08an new bright R288 ac14g ICS950405 CADIN14 K8T800 y532 quanta PHD108NQ03LT
Text: 5 4 3 2 1 ZI5 SYSTEM BLOCK DIAGRAM H/W MONITOR D THERMAL DIODE IN 200/266/333MHZ AMD Althon 64 P3 DDR DIMM P3, 4 DC/DC SMDDR_VTERM BOM mark ＊:no stuff P@:with PR stuff ＊@:with PR no stuff 19V IN P27,28 D DDR DIMM HyperTransport Link Y2-14.318MHz Y1-27MHz
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200/266/333MHZ
Y1-27MHz
Y2-14
318MHz
ICS950405
M10/M11
K8T800
Y5-32
768MHz
266/533MB/s
new bright R288-2
24c08an
new bright R288
ac14g
ICS950405
CADIN14
K8T800
y532
quanta
PHD108NQ03LT
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pcb diagram welding inverter
Abstract: CIRCUIT diagram welding inverter MIXA20W1200MC marking W18 g14 DIODE marking C5 marking diode airconditioning inverter circuit WELDING INVERTER DIAGRAM
Text: MIXA20W1200MC Six-Pack XPT IGBT VCES = 1200 V IC25 = 28 A VCE sat = 2.1 V Preliminary data Part name (Marking on product) MIXA20W1200MC O9 P9 L9 S18 W18 A5 E5 I14 C5 G14 K14 A1 E1 K10 C1 G10 H10 Features: Application: Package: • Easy paralleling due to the positive
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MIXA20W1200MC
20091002a
pcb diagram welding inverter
CIRCUIT diagram welding inverter
MIXA20W1200MC
marking W18
g14 DIODE marking
C5 marking diode
airconditioning inverter circuit
WELDING INVERTER DIAGRAM
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Untitled
Abstract: No abstract text available
Text: MIXA20W1200MC Six-Pack XPT IGBT VCES = 1200 V IC25 = 28 A VCE sat = 2.1 V Part name (Marking on product) MIXA20W1200MC O9 P9 L9 S18 W18 A5 E5 I14 C5 G14 K14 A1 E1 K10 C1 G10 H10 Features: Application: Package: • Easy paralleling due to the positive temperature coeficient of the on-state
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MIXA20W1200MC
20110304b
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UC320
Abstract: CIRCUIT diagram welding inverter diode K14
Text: MIXA20W1200MC Six-Pack XPT IGBT VCES = 1200 V IC25 = 28 A VCE sat = 2.1 V Part name (Marking on product) MIXA20W1200MC O9 P9 L9 S18 W18 A5 E5 I14 C5 G14 K14 A1 E1 K10 C1 G10 H10 Features: Application: Package: • Easy paralleling due to the positive temperature coefficient of the on-state
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MIXA20W1200MC
20110304b
UC320
CIRCUIT diagram welding inverter
diode K14
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VNB14N04
Abstract: VNK14N04FM VNP14N04FI VNV14N04 diode SS 16
Text: VNB14N04/K14N04FM VNP14N04FI/VNV14N04 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE VNB14N04 VNK14N04FM VNP14N04FI VNV14N04 • ■ ■ ■ ■ ■ ■ ■ ■ Vclamp 42 42 42 42 V V V V R DS on 0.07 0.07 0.07 0.07 Ω Ω Ω Ω I lim 14 14 14 14
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VNB14N04/K14N04FM
VNP14N04FI/VNV14N04
VNB14N04
VNK14N04FM
VNP14N04FI
VNV14N04
VNB14N04,
VNK14N04FM,
VNV14N04
VNB14N04
VNK14N04FM
VNP14N04FI
diode SS 16
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ATT220
Abstract: VNB14N04 VNK14N04FM VNP14N04FI VNV14N04
Text: VNB14N04/K14N04FM VNP14N04FI/VNV14N04 ”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET T YPE VNB14N04 VNK14N04FM VNP14N04FI VNV14N04 • ■ ■ ■ ■ ■ ■ ■ ■ V c lamp 42 42 42 42 V V V V R DS on 0.07 0.07 0.07 0.07 Ω Ω Ω Ω I l im 14 14 14
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VNB14N04/K14N04FM
VNP14N04FI/VNV14N04
VNB14N04
VNK14N04FM
VNP14N04FI
VNV14N04
VNB14N04,
VNK14N04FM,
VNV14N04
ATT220
VNB14N04
VNK14N04FM
VNP14N04FI
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ATT220
Abstract: VNB14N04 VNK14N04FM VNP14N04FI VNV14N04
Text: VNB14N04/K14N04FM VNP14N04FI/VNV14N04 ”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET T YPE VNB14N04 VNK14N04FM VNP14N04FI VNV14N04 • ■ ■ ■ ■ ■ ■ ■ ■ V c lamp 42 42 42 42 V V V V R DS on 0.07 0.07 0.07 0.07 Ω Ω Ω Ω I l im 14 14 14
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VNB14N04/K14N04FM
VNP14N04FI/VNV14N04
VNB14N04
VNK14N04FM
VNP14N04FI
VNV14N04
VNB14N04,
VNK14N04FM,
VNV14N04
ATT220
VNB14N04
VNK14N04FM
VNP14N04FI
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K14N0
Abstract: diode gen 52 mosfet current limiter FULLY AUTOPROTECTED POWER MOSFET
Text: VNB14N04/K14N04FM VNP14N04FI/VNV14N04 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE VNB14N04 VNK14N04FM VNP14N04FI VNV14N04 • ■ ■ ■ ■ ■ ■ ■ ■ Vclamp 42 42 42 42 V V V V R DS on 0.07 0.07 0.07 0.07 Ω Ω Ω Ω I lim 14 14 14 14
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VNB14N04/K14N04FM
VNP14N04FI/VNV14N04
VNB14N04
VNK14N04FM
VNP14N04FI
VNV14N04
O-263
OT82-FM
VNB14N04,
VNK14N04FM,
K14N0
diode gen 52
mosfet current limiter
FULLY AUTOPROTECTED POWER MOSFET
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16f675
Abstract: REGULATOR IC 7812 pic 16f675 BC558 driver tip 7805 16f675 datasheet VOLT REGULATOR IC 7812 REGULATOR IC 7805 7805 IC pin connections u1 7805
Text: K149 USB PICmicro Programmer DIY Electronics HK Ltd PO Box 88458, Sham Shui Po, Hong Kong http://www.kitsrus.com mailto: peter@kitsrus.com Last Modified March 3 2003 Board Construction The board is quite easy to construct and it is advisable to read through these
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16F628
ICL232
FT232BM
16f675
REGULATOR IC 7812
pic 16f675
BC558 driver
tip 7805
16f675 datasheet
VOLT REGULATOR IC 7812
REGULATOR IC 7805
7805 IC pin connections
u1 7805
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Untitled
Abstract: No abstract text available
Text: Product catalogue | Terminals | Cutting and clamping technology | Modular terminals with electronic components General ordering data Order No. Part designation Version EAN Qty. Product notes Note, technical data 1820110000 IDK 1.5N/U S07 K140 Component terminal, 1.5 mm², Insulation
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termi0000
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photo interrupter module
Abstract: "Photo Interrupter MODULE" PI-K145 k145 photo interrupter 5mm OPTICAL INTERRUPTER position
Text: Waitrony Photo Interrupter_ Module No.: PI-K145 1. General Description Dimensions Unit: mm The PI-K145 is a high performance standard type photo interrupter, which combines high output GaAs infrared light emitting diode and high sensitive
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PI-K145
PI-K145
photo interrupter module
"Photo Interrupter MODULE"
k145
photo interrupter 5mm
OPTICAL INTERRUPTER position
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Untitled
Abstract: No abstract text available
Text: PD -2.399 International IOR Rectifier HEXFRED HFA04TB60 Ultrafast, Soft Recovery Diode Features • • • • • • VR = 600V Ultrafast Recovery Ultrasoft Recovery Very Low lRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions VF = 1.8V
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HFA04TB60
HFA04TB60
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smd diode f54
Abstract: 18t0045 smd f54 209DMQ 20F0040 209DMQ150 50W005F 15CT0035 smd diode K10 209CMQ150
Text: Other Products from IR Schottky Diode Surface Mount - Discrete 0 .7 7 - 20 Am ps 'F AV @ TC Case Outline >RM@ Rated V r w m Part Number VRRM (A) 1.1 (°C) 10MQ040 00 40 92 (V) 0.51 10MQ060 10MQ090 60 90 0 .77 0 .77 110 110 0.57 0.65 _ _ 7.5 5.0 15MQ040
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10MQ040
10MQ060
10MQ090
15MQ040
10BQ015
10BQ040
10BQ060
10BQ100
30BQ015
30BQ040
smd diode f54
18t0045
smd f54
209DMQ
20F0040
209DMQ150
50W005F
15CT0035
smd diode K10
209CMQ150
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OPB 813
Abstract: No abstract text available
Text: ^ O TO RO LA SEMICONDUCTOR TECHNICAL DATA Order this document by OPB 86O/D Advance Information OPB86O OPB870 Slotted O ptical Sw itches Transistor Output These slotted switches each consist of a gallium arsenide infrared light emitting diode facing a silicon NPN phototransistor in a plastic housing. The devices are separated by a
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86O/D
OPB86O
OPB870
OPB860/D
OPB 813
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GE SC 140 d
Abstract: diode b3l motorola bridge rectifier mda RS 206G
Text: 89D M OTOROLA SC -CDIODES/OPTO} 77439 ~ - X 3 DE I b3L,72S5 0D77M3T 1 "|~ MOTOROLA - 0 5 O rder th is data sheet b y M D A 2 0 0 G /D • i S E M IC O N D U C T O R TECHNICAL DATA M DA200G THRU MDA206G Integral G la ss Passivated Diode A sse m b lie s . diffused glass passivated silicon dice interconnected and molded into rectifier circuit
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0D77M3T
K145BP,
MDA200G
MDA206G
GE SC 140 d
diode b3l
motorola bridge rectifier mda
RS 206G
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Untitled
Abstract: No abstract text available
Text: SCS-THO M SO N VNB14N04/K14N04FM ¡LiOTCMlDlBS VNP14N04FI/VNV14N04 "OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE VNB14N04 VNK14N04FM VNP14N04FI VNV14N04 Vela mp 42 42 42 42 V V V V RoS on him 0.07 0.07 0.07 0.07 14 14 14 14 a fl n n A A A A . . . . .
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VNB14N04/K14N04FM
VNP14N04FI/VNV14N04
VNB14N04
VNK14N04FM
VNP14N04FI
VNV14N04
VNB14N04,
VNK14N04FM,
VNV14N04
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Untitled
Abstract: No abstract text available
Text: VN B14N04/K14N04FM VNP14N04FI/VNV14N04 ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE VN B14N 04 VN K14N 04FM VNP14N 04FI VN V14N 04 Vclamp 42 42 42 42 V V V V R D S o n 0 .0 7 0 .0 7 0 .0 7 0 .0 7 Q. a n Cl 11im 14 14 14 14 A A A A . . . . . .
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B14N04/K14N04FM
VNP14N04FI/VNV14N04
VNP14N
O-263
VNB14N04,
VNK14N04FM,
VNP14N04FI
VNV14N04
14N04FI-VNV14N04
PowerSO-10
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