sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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IRF4905 equivalent
Abstract: equivalent of mosfet irf4905
Text: PD 9.1526 International IO R Rectifier IRFI4905 P RELIM INARY HEXFET Power MOSFET • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS D • Sink to Lead Creepage Dist. = 4.8mm • P-Channel • Fully Avalanche Rated
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IRFI4905
IRF4905 equivalent
equivalent of mosfet irf4905
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diode J4S
Abstract: j4a diode ZC831 832A J5B SOT23 j4s diode ZC834A DIODE j5s ZC830A ZC831A
Text: ZC830/A/B to ZC836/A/B SOT23 SILICON VARIABLE CAPACITANCE DIODES ISSUE 5 – JANUARY 1998 1 FEATURES * Close Tolerance C-V Characteristics * High Tuning Ratio * Low IR Enabling Excellent Phase Noise Performance IR Typically <200pA at 25V 2 1 3 3 SOT23 ABSOLUTE MAXIMUM RATINGS.
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ZC830/A/B
ZC836/A/B
200pA
ZC830)
ZC830B)
ZC830
ZC830A
ZC830B
diode J4S
j4a diode
ZC831
832A
J5B SOT23
j4s diode
ZC834A
DIODE j5s
ZC830A
ZC831A
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j4a diode
Abstract: ZC830B ZC830 ZC830A ZC831A ZC832A ZC833A ZC834A ZC835A ZC836A
Text: ZC830/A/B to ZC836/A/B SOT23 SILICON VARIABLE CAPACITANCE DIODES ISSUE 5 – JANUARY 1998 1 FEATURES * Close Tolerance C-V Characteristics * High Tuning Ratio * Low IR Enabling Excellent Phase Noise Performance IR Typically <200pA at 25V 2 1 3 3 SOT23 ABSOLUTE MAXIMUM RATINGS.
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ZC830/A/B
ZC836/A/B
200pA
ZC830)
ZC830B)
ZC830
ZC830A
ZC830B
j4a diode
ZC830B
ZC830
ZC830A
ZC831A
ZC832A
ZC833A
ZC834A
ZC835A
ZC836A
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LA7865
Abstract: 7856 LA7855 DIODE ZENER D1P LA7835 BLY92 transistor IC LA7837 LA7837 functions LA7837 LA7850
Text: O rdering n u m b er : EN 3 3 1 5 Monolithic Linear 1C LA7855, 7856 No.3315 SA\YO Very High Resolution CRT Display Synchronization i O verview The LA7855,7856 are sync-deflection circuit ICs dedicated to CRT usegfi'1 |a n be 0phected to the LA7837, 7838 for vertical output use to form a sync d e 0 ^ iio n ^ irl^ ^ j
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LA7855
LA7837,
Th/LA7855r
For12V,
LA7855,
LA7865
7856
DIODE ZENER D1P
LA7835
BLY92 transistor
IC LA7837
LA7837 functions
LA7837
LA7850
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diode J4S
Abstract: ZC831 ZC834A ZC832A
Text: SOT23 SILICON VARIABLE CAPACITANCE DIODES ISSUE 4-JU N E 1996 L . ZC830/A/B to -?Q836/ A/B FEATURES * Close Tolerance C-V Characteristics * High Tuning Ratio * Low iR Enabling Excellent Phase Noise Performance lR T ypically <200pA at 25V ABSOLUTE MAXIMUM RATINGS.
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200pA
ZC830/A/B
50MHz
ZC830)
ZC830B)
ZC830/A/B
ZC836/A/B
ZC830
ZC831
ZC832
diode J4S
ZC834A
ZC832A
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TA550
Abstract: RJH 30 E2 smd JSs 75 smd JSs transistor TRANSISTOR SMd jg data "ta550" transistor SMD 6b Y 14U3
Text: V T C INC 9388929 V T C D D 0 0 1 3 ÌS V 99D IN C 01395 V A 2 7 0 3 D T - 7 9 - 0 7 *"2 o DUAL HIGH-SPEED OPERATIONAL TRANSCONDUCTANCE AMPLIFIER WITH LINEARIZING DIODES P R E L IM IN A R Y DESCRIPTION The VA2703 Is a dual high-speed operational transconductance amplifier with the added features of
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VA703
VA2703
TA550
RJH 30 E2
smd JSs 75
smd JSs transistor
TRANSISTOR SMd jg data
"ta550"
transistor SMD 6b Y
14U3
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wiring pcb camera ccd
Abstract: 5.1 audio system ir remote circuit IR DETECTING UNITS FOR REMOTE CONTROL dust sensor matrix CCD LED Flash 10 DOT toner chip IC CCD LED IC IR REMOTE CONTROL IC Matrix Graphic LED Drivers 8 12
Text: I CONTENTS 37b OPTOELECTRONICS MEMORIES Flash M em ories. 3 Combination Memories. 5 Mask ROM Pin Compatible Flash M odules.
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332ysMIM7
wiring pcb camera ccd
5.1 audio system ir remote circuit
IR DETECTING UNITS FOR REMOTE CONTROL
dust sensor
matrix CCD
LED Flash 10 DOT
toner chip IC
CCD LED IC
IR REMOTE CONTROL IC
Matrix Graphic LED Drivers 8 12
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DCM7* DIODE
Abstract: sj 1a0 diode sj 1a0 74ALVT16240 diode 3a0
Text: Philips Semiconductors Preliminary specification 2.5V/3.3V ALVT 16-bit inverting buffer/driver 3-State FEATURES 74ALVT16240 * No bus current loading when output is tied to 5V bus • 16-bit bus interface * Latch-up protection exceeds 500mA per JEDEC Std 17
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16-bit
74ALVT16240
64mA/-32mA
500mA
DESC18AA
711002b
DCm721
DCM7* DIODE
sj 1a0 diode
sj 1a0
74ALVT16240
diode 3a0
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Fluke 75 Multimeter
Abstract: FLUKE 75 "Fluke 75" Multimeter ECJ-1VC1H680J FLUKE 1520 bq25010 bq25011 bq25012 ECJ2FB0J106M ic j901
Text: bq25010/11/12/15/17 bqHYBRID EVM for Single-Chip Charger and DC-DC Converter for Bluetooth Headsets and Other Portable Applications User's Guide June 2007 SLUU214A bq25010/11/12/15/17 (bqHYBRID) EVM for Single-Chip Charger and DC-DC Converter for Bluetooth Headsets and Other Portable Applications
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bq25010/11/12/15/17
SLUU214A
bq25010/11/12
bq25015/17
Fluke 75 Multimeter
FLUKE 75
"Fluke 75" Multimeter
ECJ-1VC1H680J
FLUKE 1520
bq25010
bq25011
bq25012
ECJ2FB0J106M
ic j901
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tms1002
Abstract: LTC1094CN h06303 motorola 026/j 112 20C40C LTC1092MJ8 LTC1091 YSI 44007 2lsbl LTC1092AMJ8
Text: u n ü \ LTC1091/LTC1092 LTC1093/LTC1094 R TECHNOLOG Y l 2, 6 and 8 C h a n n e l 10-Bit Serial I/O D ata Acquisition Systems F€flTUR€S • Programmable Features Unipolar/Bipolar Conversions Differential/Single Ended Multiplexer Configurations ■ Sample and Holds
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LTC109Ã
/LTC1092
LTC1093/LTC1094
10-Bit
20/js
LTC1091
LTC1092/3/4
LTC109112/3/4
10-bit
tms1002
LTC1094CN
h06303
motorola 026/j 112
20C40C
LTC1092MJ8
YSI 44007
2lsbl
LTC1092AMJ8
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Untitled
Abstract: No abstract text available
Text: P4C188/P4C188L ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS SCRAMS FEATURES • Full CMOS, 6T Cell ■ High Speed (Equal Access and Cycle Times) -12/15/20/25 ns (Commercial) - 20/25/35/45/55 ns (Military) ■ Low Power (Commercial/Military) -7 1 5 m W Active-12 /1 5
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P4C188/P4C188L
Active-12
P4C188
P4C188L
P4C188L
22-Pin
-24-Pin
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Untitled
Abstract: No abstract text available
Text: User's Guide SLUU497B – December 2011 – Revised June 2012 Chipscale-Packaged bq24165, 24166, 24167 Evaluation Modules The bq24165, 24166, 24167 evaluation module is a complete charger module for evaluating a compact, flexible, high-efficiency, USB-friendly, switch-mode charge management solution for single-cell, Li-ion and
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SLUU497B
bq24165
bq2416x
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Untitled
Abstract: No abstract text available
Text: User's Guide SLUU669 – January 2012 QFN-Packaged bq24165/166/167EVM-720 Evaluation Modules The bq24165/166/167EVM-720 evaluation module is a complete charger module for evaluating a compact, flexible, high-efficiency, USB-friendly, switch-mode, charge-management solution for single-cell,
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SLUU669
bq24165/166/167EVM-720
bq2416x
bq24165/166/167EVM
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Untitled
Abstract: No abstract text available
Text: User's Guide SLUU924 – April 2012 QFN-Packaged bq24270/271 Evaluation Modules The bq24270/271 evaluation module is a complete charger module for evaluating compact, flexible, and high-efficiency charge-management solutions for single-cell, Li-ion, and Li-polymer batteries used in a
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SLUU924
bq24270/271
bq2427x
bq24270/271EVM
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BQ24192
Abstract: No abstract text available
Text: User's Guide SLUUA90 – April 2013 bq27531EVM with bq27531 Battery Management Unit Impedance Track Fuel Gauge and bq24192 4.5-A, Switch-Mode Battery Charger for Single-Cell Applications This evaluation module EVM is a complete evaluation system for the Battery Management Unit (BMU)
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SLUUA90
bq27531EVM
bq27531
bq24192
bq27531-G1
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D3953
Abstract: RS 608G AD2033 ad2027 D7507 cmos cookbook TIC04 National Semiconductor Linear Data Book D7522 Model 289J
Text: A N A LO G D E V IC E S DATAACQUISITION DATABOOK 1982 VOLUME II MODULES-SUBSYSTEMS General Information 1 Comprehensive Index to Both Volumes 2 Ordering Guide 3 am Operational Amplifiers 4 Isolation Amplifiers 5 Analog Multipliers/Dividers 6 RMS-to-DC Converters
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T35W
Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
Text: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,
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10DB2P
10DB4P
10DB6P
180B6A
T35W
transistor kt 606A
65e9 transistor
sr 6863 D
2SC965
CS9011
sr1k diode
KT850
TRANSISTOR st25a
transistor 130001 8d
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transistor SMD s72
Abstract: nec mys 501 MYS 99 transistor 8BB smd st MYS 99 102 kvp 81A kvp 81A DIODE Kvp 69A kvp 86a smd transistor A7p
Text: ВВЕДЕНИЕ Впервые, сделана столь масштабная попытка, разобраться с маркировкой компонентов поверхностного монтажа SMD . Конечно, книга не является панацеей, но на взгляд авторов должна существенно помочь в той
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OT323
BC818W
MUN5131T1.
BC846A
SMBT3904,
MVN5131T1
SMBT3904
OT323
transistor SMD s72
nec mys 501
MYS 99
transistor 8BB smd
st MYS 99 102
kvp 81A
kvp 81A DIODE
Kvp 69A
kvp 86a
smd transistor A7p
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