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    DIODE IN 4004 Search Results

    DIODE IN 4004 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE IN 4004 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    DIN 50014 STANDARD

    Abstract: DIN 50014 DIN EN 50014 STANDARD
    Text: CNY65Exi TELEFUNKEN Semiconductors Optocoupler with Phototransistor Output Description The CNY65Exi consists of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a 4 lead plastic packages. The single components are mounted in opposite position,


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    CNY65Exi CNY65Exi 50014-1977/VDE 50020-1977/VDE D-74025 DIN 50014 STANDARD DIN 50014 DIN EN 50014 STANDARD PDF

    Diode LT 5333

    Abstract: D-73277 f9250
    Text: AS2701 ASI Slave IC DATA SHEET Key Features General Description • • • The signal transmission between the master and the slaves in the ASI system is performed by a parallel two-line wire ASI-line to which the IC is connected only via a polarity protection diode and a suppressor diode. The line is


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    AS2701 trans75 Diode LT 5333 D-73277 f9250 PDF

    DIN40045

    Abstract: No abstract text available
    Text: CNY21Exi Optocoupler with Phototransistor Output Description The CNY21Exi consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic dual inline package. The single components are mounted on one leadframe in


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    CNY21Exi CNY21Exi Ex-90 D-74025 1-Jun-96 DIN40045 PDF

    HAS 50-S

    Abstract: infrared emitters and detectors data book temic Book Microelectronic CNY21Exi t-1 ir phototransistor Ex-90C 1014 1987 CNY21 Telefunken Electronic Telefunken Phototransistor
    Text: CNY21Exi TELEFUNKEN Semiconductors Optocoupler with Phototransistor Output Description The CNY21Exi consists of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a 4 lead plastic dual inline packages. The single components are mounted on one leadframe in


    Original
    CNY21Exi CNY21Exi Ex-90 D-74025 HAS 50-S infrared emitters and detectors data book temic Book Microelectronic t-1 ir phototransistor Ex-90C 1014 1987 CNY21 Telefunken Electronic Telefunken Phototransistor PDF

    DIN 50014 STANDARD

    Abstract: CNY65
    Text: CNY65Exi Optocoupler with Phototransistor Output Description The CNY65Exi consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic package. The single components are mounted in opposite oneanother, providing a distance between input and


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    CNY65Exi CNY65Exi 50014-1977/VDE 50020-1977/VDE D-74025 12-Dec-97 DIN 50014 STANDARD CNY65 PDF

    DIN 50014 STANDARD

    Abstract: DIN 50014 DIN EN 50014 STANDARD CNY65
    Text: CNY65Exi Optocoupler with Phototransistor Output Description The CNY65Exi consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic package. The single components are mounted in opposite oneanother, providing a distance between input and


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    CNY65Exi CNY65Exi 50014-1977/VDE 50020-1977/VDE D-74025 11-Jun-96 DIN 50014 STANDARD DIN 50014 DIN EN 50014 STANDARD CNY65 PDF

    tk19 infrared

    Abstract: tk19 Telefunken TK19 ir tk19 tk19 127 tk19 200 tk19 001 phototransistor tk19 oscilloscope ic 2158U
    Text: CNY65Exi Vishay Telefunken Optocoupler with Phototransistor Output Description The CNY65Exi consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic package. The single components are mounted in opposite oneanother, providing a distance between input and


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    CNY65Exi CNY65Exi 50014-1977/VDE 50020-1977/VDE CNY65 2158U tk19 infrared tk19 Telefunken TK19 ir tk19 tk19 127 tk19 200 tk19 001 phototransistor tk19 oscilloscope ic 2158U PDF

    2158U

    Abstract: No abstract text available
    Text: CNY65Exi Vishay Telefunken Optocoupler with Phototransistor Output Description The CNY65Exi consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic package. The single components are mounted in opposite oneanother, providing a distance between input and


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    CNY65Exi CNY65Exi 50014-1977/VDE 50020-1977/VDE D-74025 2158U PDF

    tk19 infrared

    Abstract: tk19 Telefunken tk19 ir tk19 VISHAY tk19 tk19 200 CNY65 ir-diode tk19 001
    Text: CNY65Exi Vishay Telefunken Optocoupler with Phototransistor Output Description The CNY65Exi consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic package. The single components are mounted in opposite oneanother, providing a distance between input and


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    CNY65Exi CNY65Exi 50014-1977/VDE 50020-1977/VDE D-74025 tk19 infrared tk19 Telefunken tk19 ir tk19 VISHAY tk19 tk19 200 CNY65 ir-diode tk19 001 PDF

    tk19

    Abstract: tk19 200 VISHAY tk19
    Text: CNY65Exi Vishay Semiconductors Optocoupler with Phototransistor Output Description The CNY65Exi consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic package. The single components are mounted in opposite oneanother, providing a distance between input and


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    CNY65Exi CNY65Exi 50014-1977/VDE 50020-1977/VDE D-74025 tk19 tk19 200 VISHAY tk19 PDF

    D291S

    Abstract: No abstract text available
    Text: European PowerSemiconductor and Electronics Company Marketing Information D 721 S C ø3,5± A 0,1 4875-0,2 Applikation: Freilaufdiode in Spannungszwischenkreisumrichter bis VD DC = 2000 V VWK January Schnelle Gleichrichterdiode Fast Diode D 721 S 45 T Elektrische Eigenschaften / Electrical properties


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    17suant D291S PDF

    A1080-A

    Abstract: D291S
    Text: European PowerSemiconductor and Electronics Company Marketing Information D 721 S C ø3,5± A 0,1 4875-0,2 Applikation: Freilaufdiode in Spannungszwischenkreisumrichter bis VD DC = 2000 V VWK January Schnelle Gleichrichterdiode Fast Diode D 721 S 45 T Elektrische Eigenschaften / Electrical properties


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS AKTIENGESELLSCHÂF bflE » • «235kD5 ODSlMSb SSt B S I E i SIEM EN S T '03' o! Dioden Diodes HF-Schottky-Diode in Beam Lead Technologie RF Schottky Diode in Beam Lead Technology Zero Bias Zero Bias Type BAT 32 Characteristics TA = 25° C Frequency


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    235kD5 OT-23 OT-143 11I181I8I88B PDF

    J920

    Abstract: BP103
    Text: SIEMENS LD242 GaAs INFRARED EMITTER Maximum Ratings FEATURES • GaAs Infrarad Emitting Diode, Fabricated In a Liquid Phase Epitaxy Emits Radiation in Near Infrared Range Cathode Electrically Connected to Case High Efficiency High Reliability Long Lifetime


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    LD242 BP103, BPX63 CT018) LD242 -LE78MM J920 BP103 PDF

    L-1017

    Abstract: TI-327 UL94V-O DIN 50014 L1017
    Text: Temic CNY65Exi Semiconductors Optocoupler with Phototransistor Output Description The CNY65Exi consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic package. The single components are mounted in opposite


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    CNY65Exi CNY65Exi 50014-1977/VDE 50020-1977/VDE D-74025 12-Dec-97 L-1017 TI-327 UL94V-O DIN 50014 L1017 PDF

    5551b

    Abstract: No abstract text available
    Text: 1SR155-400 Diode, rectifying, surface mount These diodes are suitable for high density surface mounting on printed circuit boards. Features Dimensions Units : mm • available in PMDM (LSM) package • part marking, 4004R 2.0 ±0.2 CM k J - Applications


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    1SR155-400 4004R 1SR155-400 DG154Sb 5551b PDF

    1sr155-400

    Abstract: No abstract text available
    Text: 1SR155-400 Diode, rectifying, surface mount These diodes are suitable for high density surface mounting on printed circuit boards. Dimensions Units : mm 20± 02 Features • available in PMDM (LSM) package • part marking, 4004R Applications • rectifying


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    1SR155-400 4004R 1SR155-400 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS GaAIAs-Lumineszenzdiode 660 nm GaAIAs Light Emitting Diode (660 nm) SFH 464 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Features Wesentliche Merkmale • Strahlung im sichtbaren Rotbereich ohne IRAnteil


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    Sam1998-07-15 SFH464 OHR01457 PDF

    L0242

    Abstract: No abstract text available
    Text: SIEMENS LD242 GaAs INFRARED EMITTER Maximum Ratings FEATURES * GaAs Infrared Emitting Diode, Fabricated in a Liquid Phase Epitaxy Process * Emits Radiation In Near Infrared Range * Cathode Electrically Connected to Case Operating and Storage Temperature Range T0P, Tstg . -40° to +80°C


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    LD242 BP103, BPX63 E7800" L0242 L0242 PDF

    JTK19

    Abstract: No abstract text available
    Text: CNY65Exi Vishay Telefun ken Optocoupler with Phototransistor Output Description The CNY65Exi consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic package. The single components are mounted in opposite oneanother, providing a distance between input and


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    CNY65Exi CNY65Exi 50014-1977/VDE 50020-1977/VDE 95HOI5 95H0I6 CNY65 JTK19 11-Ja PDF

    H24B2

    Abstract: No abstract text available
    Text: OPTOELECTRONICS H24B1 H24B2 PACKAGE DIMENSIONS 0.75 0.60 D + DESCRIPTION The H24B series consists of a gallium arsenide infrared em itting diode coupled with a silicon phototransistor. The devices are housed in a low-cost plastic package with lead spacing com patible with a dual in-line package.


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    H24B1 H24B2 E51868 H24B2 PDF

    VISHAY tk19

    Abstract: tk19 tk19 200 phototransistor tk19
    Text: CNY65Exi_ ViSM&Y Vishay Telefunken ▼ Optocoupler with Phototransistor Output Description The CNY65Exi consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic package. The single components are mounted in opposite oneanother, providing a distance between input and


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    CNY65Exi_ CNY65Exi 50014-1977/VDE 50020-1977/VDE CNY65 81///2158U VISHAY tk19 tk19 tk19 200 phototransistor tk19 PDF

    H24A1

    Abstract: H24A2 ST2006 ST4004 J279 ST2038
    Text: PHOTOTRANSISTOR OPTOCOUPLERS 0PTOELECTBOHICS H24A1 H24A2 PACKAGE DIMENSIONS DESCRIPTION The H24A series consists of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor. The devices are housed in a iow-cost plastic package with


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    H24A1 H24A2 E51868 ST4004 ST2006 ST2D36 ST2037 ST2038 3T2039 J279 PDF

    CNY21Exi

    Abstract: CNY21 Ex-90C JU100
    Text: Temic CNY21Exi S e m i c o n d u c t o r s Optocoupler with Phototransistor Output Description The CNY21Exi consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic dual inline package. The single components are mounted on one ieadframe in


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    CNY21Exi Ex-90 ll-Jun-96 CNY21 Ex-90C JU100 PDF