2x101-06 200A
Abstract: 2x101-06 DSEI 2X101-06 ixys dsei 2x101
Text: DSEI 2x101 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 600 600 AC-1 IK-10 LN -9 VX-18 IFAVM = 2x96 A VRRM = 600 V trr = 35 ns Type DSEI 2x 101-06P D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 70°C; rectangular; d = 0.5
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2x101
VX-18
IK-10
101-06P
Con1000
2x101-06
2x101-06 200A
2x101-06
DSEI 2X101-06
ixys dsei 2x101
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QR200
Abstract: No abstract text available
Text: DSEI 2x101 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 600 600 AC-1 IK-10 LN -9 VX-18 IFAVM = 2x96 A VRRM = 600 V = 35 ns trr Type DSEI 2x 101-06P D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 70°C; rectangular; d = 0.5
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2x101
VX-18
IK-10
101-06P
2x101-06
QR200
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ixys dsei 2x101
Abstract: IXYS DSEI 2 2x91A ixys dsei 2x91
Text: DSEI 2x101 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1200 1200 AC-1 IK-10 LN -9 VX-18 IFAVM = 2x91 A VRRM = 1200 V trr = 40 ns Type DSEI 2x 101-12P D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular; d = 0.5
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2x101
VX-18
IK-10
101-12P
2x101-12
ixys dsei 2x101
IXYS DSEI 2
2x91A
ixys dsei 2x91
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IXYS DSEI 2X121
Abstract: 121-02P 12102p 2x123
Text: DSEI 2x121 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 200 200 Type AC-1 IK-10 LN -9 VX-18 IFAVM = 2x123 A VRRM = 200 V trr = 35 ns DSEI 2x 121-02P D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 70°C; rectangular; d = 0.5
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2x121
IK-10
VX-18
2x123
121-02P
IXYS DSEI 2X121
121-02P
12102p
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Untitled
Abstract: No abstract text available
Text: DSEI 2x101 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1200 1200 AC-1 IK-10 LN -9 VX-18 IFAVM = 2x91 A VRRM = 1200 V = 40 ns trr Type DSEI 2x 101-12P D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular; d = 0.5
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2x101
VX-18
IK-10
101-12P
2x101-12
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PSEI2X101
Abstract: 2x101-06 200A 2X101 DSEI 20-01 A 2x10-10 A1080-A
Text: ECO-PACTM 2 Fast Recovery Epitaxial Diode FRED PSEI 2x101 VRRM trr Preliminary Data Sheet VRSM VRRM Type (V) (V) 600 600 PSEI 2x101/06 Symbol Test Conditions IFRMS I FAVM* I FRM IFSM TVJ = TVJM ∫ i dt 2 TVJ TVJM Tstg VISOL IFAVM AC-1 IK-10 LN -9 VX-18
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2x101
2x101/06
IK-10
VX-18
2x101-06
PSEI2X101
2x101-06 200A
2X101
DSEI 20-01 A
2x10-10
A1080-A
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tunnel diode detector
Abstract: Tunnel Diode
Text: jy&Cßm 7700 Series Tunnel Diode Detector Performance 1400 1200 1000 5t ks L )A D > 3t 800 / ik a I 600 IK lo ad I L DAD 1C Of -a 400 r kQ LOA ) - 1.0 2 8 1 _l o • if o oc 0 0 ^ »D 200 50ka D '"LOAD — < *-1 LU Y 44- * I * i i 18 FREQUENCY GHZ)
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Untitled
Abstract: No abstract text available
Text: SHARR PC450T11 PC450T11 Photocoupler with BtriK-m Breakdown Diode for Surge Voltage Absorption • Features ■ O uline Dimensions Unit : mm 1. Built-in breakdown diode for absorption of surge voltage 2. High current transfer ratio (CTR : MIN. 2 000% at IK= 5mA)
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PC450T11
750pcs.
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Diode BAY 74
Abstract: BAY74 BAV74 74 MARKING
Text: SIEM EN S Silicon Switching Diode Array BAV 74 • For high-speed switching • Common cathode Type Marking Ordering Code tape and reel BAV 74 JAs Q62702-A693 Pin Configuration Package1) 3 SOT-23 IK o CHAO7004 Maximum Ratings per Diode Parameter Symbol Values
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Q62702-A693
OT-23
CHAO7004
H800069
BAV74
Diode BAY 74
BAY74
BAV74
74 MARKING
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IG8T
Abstract: No abstract text available
Text: s e M IK R O n SKiiP 462 GB 060 - 250 WT Absolute Maximum Ratings Symbol ¡Conditions " Values Units 600 400 400 800 - 4 0 . + 150 2500 400 800 4300 93 V V A A °C V A A A kA2s IG8T & Inverse Diode VcES Vcc 10> lc lew Tj 31 Visai 4 If Ifm Ifsm I2) Diode)
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Untitled
Abstract: No abstract text available
Text: '> 3 7 Schottky Barrier Diode Axial Diode OUTLINE DIMENSIONS S2S6M 60V 2A •TÌ150T: • P • EE rrsm 1 .O 0 U - K •SRffljg •D C /D C J V A -i’ y - A . OAfêâl • his . iK—5>yii,ms • Æ tè ü RATINGS Absolute Maximum Ratings h m Symbol Tstg
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H11K1
Abstract: H11K
Text: Optoisolator Specifications H11K1, H11K2 Optoisolator GaAIAs Infrared Emitting Diode and Two NPN Silicon Photo-Darlington Amplifiers T h e H I IK series consists o f a gallium -alum inum -arsenide, infrared em itting diode coupled with two high voltage silicon Darlingtonconnected phocotransistors which have integral base-emitter resistors
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H11K1,
H11K2
INFRAR000,
H11K1
H11K
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ESM6045DV
Abstract: No abstract text available
Text: SGS-THOMSON llO O M iL iC T IM iK S ESM 6045DV NPN DARLINGTON POWER MODULE . HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW R,h JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ULTRAFAST FREEWHEELING DIODE . ISOLATED CASE 2500V RMS . EASY TO MOUNT . LOW INTERNAL PARASITIC INDUCTANCE
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6045DV
ESM6045DV
ESM6045DV
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SKiiP 613 GB
Abstract: No abstract text available
Text: s e m ik r d n SKiiP 312 GD 120 - 302 WT Absolute Maximum Ratings | Conditions 11 Values IGBT & Inve rse Diode V ces Operating DC link voltage Vc c 10 Theatsink ~ 25 °C lc Theatsink = 25 °C; tp < 1 ms ICM IGBT & Diode T | 3> AC, 1 min. ViSoi4) Theatsink = 25 °C
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613bb71
QQ05Q01
0GQ50G3
00G5D04
SKiiP 613 GB
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Untitled
Abstract: No abstract text available
Text: ÛUALITY TECHNOLOGIES CORP S7E D • 74hLiB51 GOOMlRb TTb Optoisolator Specifications _ H11D1-H11D4 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon High Voltage Phototransistor * m il l im e t e r SYMBOL' A B C D «C ü T IK in
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74hLiB51
H11D1-H11D4
1D1-H11D4
E51868
0110b
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Untitled
Abstract: No abstract text available
Text: SP3T SWITCHES Advanced Conffoi Components H ik . The S3 series of single pole, three throw PIN diode switches span the frequency range of 10MHz to 18GHz and are available with absorptive or reflective inputs. The switches are available in a wide variety of
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10MHz
18GHz
26GHz
/-12V,
/-15V
S3-0303B
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Untitled
Abstract: No abstract text available
Text: s e m ik r o n SKiiP 292 GD 170 - 375 CTV Absolute Maximum Ratings Symbol |Conditions 1 Values Units 1700 1200 250 - 4 0 . + 150 4000 250 500 2160 23,4 V IGBT & Inverse Diode VcES Vcc 91 lc T j3) V jgo l 4 ' If If m If s m l2t Diode) Operating D C fink voltage
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esm20
Abstract: ESM2012DV
Text: SGS-THOMSON llO O M iL iC T IM iK S ES M 2012DV NPN DARLINGTON POWER MODULE . HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW R,h JUNCTION TO CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ULTRAFAST FREEWHEELING DIODE . ISOLATED CASE 2500V RMS . EASY TO MOUNT
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2012DV
ESM2012DV
esm20
ESM2012DV
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AX078
Abstract: MARKING JM 251C 25T160 d2s4m D2S4 122T
Text: Schottky Barrier Diode Axial Diode OUTLINE D2S4M Unit : mm Package I AX078 W eight 0.38g Typ 40V 2A CD = E Feature • Tj=15CfC • T j= 1 5 0 °C • P rrsm P K ^ V î/x (S ü E • P rrsm 27.5 Rating 27.5 I Main Use M * iS M iK im M arking • Switching Regulator
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15ffC
AX078
J533-1
AX078
MARKING JM
251C
25T160
d2s4m
D2S4
122T
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode W tm S60SC4M 40V OUTLINE A Feature • Tj=150°C • Tj=150°C • PRRSM T ’A ' i ^ V Î ' I ' K i E • P rrsm • * i « S • Small B jc • High lo Rating i Rating Main Use • Switching Regulator • DC/DC Z iy iK —S
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S60SC4M
waveii50Hz
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SKIIP832GB
Abstract: skiip 832 gb 120
Text: s em ik r d n SKiiP 832 GB 120 - 406 CTV Absolute Maximum Ratings Symbol Values Units 1200 900 800 - 4 0 . + 150 3000 5 800 1600 8600 374 V V A °C V A A A kA2s |Conditions1) IG BT & inverse Diode VcES V c c 9» lc Ti 3} V is o l 41 If Ifm Ifsm l2t Diode)
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Untitled
Abstract: No abstract text available
Text: 5 Ü 8 È X /W :* y a 7 jnting Device Surface Moun.ing^Device K 7 Schottky Barrier Diode K S Diode Array OUTLINE DIMENSIONS S1ZAS4 40V 1.2A •S M D • T j 1 50TC •P rrs m % T \j - •SR B S •D C /D C Z iy iK - 9 •m m , y -A . oa«h •a«. Tti-^jutü
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S2L60
Abstract: loa marking code
Text: Super Fast Recovery Diode Axial Diode OUTLINE S2L60 Unit : mm Package : AX10 W eight O .ffig iT y p 6 0 0 V 1 .5A Feature 26.5 • r a M ± FRD • High Voltage Super FRD • ñ S 'íX • Low Noise • trr=50ns • trr=50ns .1 cR4 26.5 -O . - 2 - * ftm iiA iK m
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S2L60
S2L60
CJ533-1
loa marking code
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diode SKN molybdenum
Abstract: No abstract text available
Text: s e m ik r d n Section 15: SEMICELL Power Semiconductor Chips The following tables contain our standard types. Other types or selections are available on special request. Please contact your SEMIKRON office. SEMICELL® Rectifier Diode Chips , T^ es $ Y s k n 3
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GMCL03
GMCL04
CD47E405
GMCL06
fll3bb71
diode SKN molybdenum
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