ESM6045DV
Abstract: No abstract text available
Text: SGS-THOMSON llO O M iL iC T IM iK S ESM 6045DV NPN DARLINGTON POWER MODULE . HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW R,h JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ULTRAFAST FREEWHEELING DIODE . ISOLATED CASE 2500V RMS . EASY TO MOUNT . LOW INTERNAL PARASITIC INDUCTANCE
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6045DV
ESM6045DV
ESM6045DV
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ic Lb 598 d
Abstract: ESM6045DV
Text: FZ7 SGS-THOMSON *> 7 # ESM 6045DV NPN DARLINGTON POWER MODULE . HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW Rth JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ULTRAFAST FREEWHEELING DIODE . ISOLATED CASE 2500V RMS . EASY TO MOUNT . LOW INTERNAL PARASITIC INDUCTANCE
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6045DV
ESM6045DV
ic Lb 598 d
ESM6045DV
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BUS11A PHILIPS SEMICONDUCTOR
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE 25E D • bb53,m Q01b22Q b ■ T~32-0t Power Devices HIGH SPEED, HIGH VOLTAGE DARLINGTONS in order of current rating PACKAGE O U T LIN E *C(DC)(U V CBO V CEO SOT-93 6A 800V 900V BUV90 SOT-93 12A BUV90F SOT-199 ESM3045AV ESM 3045DV
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Q01b22Q
32-0t
OT-93
BUV90
BUV90F
OT-199
ESM3045AV
3045DV
ESM4045AV
BUS11A PHILIPS SEMICONDUCTOR
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