Diode Motorola 711 2N2905A
Abstract: pin configuration transistor BC547 2N2222 BC237 2N555
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMAD130 MMAD1103 MMAD1105 MMAD1107 MMAD1109 Monolithic Diode Arrays Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching
|
Original
|
PDF
|
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
MV1644
MV2103
Diode Motorola 711 2N2905A
pin configuration transistor BC547 2N2222
BC237
2N555
|
MAD130P
Abstract: 2N1711 solid state BC237 MARKING CODE diode sod123 t3 H3T-B MPS4258 bf244 MSA1022 Bf391 BCY72
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Diode Array MMAD1108 Surface Mount Isolated 8–Diode Array This diode array is a multiple diode junction fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching
|
Original
|
PDF
|
MMAD1108
De218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
MAD130P
2N1711 solid state
BC237
MARKING CODE diode sod123 t3
H3T-B
MPS4258
bf244
MSA1022
Bf391
BCY72
|
Untitled
Abstract: No abstract text available
Text: 2.5 Gbit/s Re-timing Laser Driver GD16521 an Intel company Preliminary General Description Features laser diode. A modulation current control loop maintains a constant modulation current for the laser diode, or alternatively maintains a constant extinction ratio of the laser diode.
|
Original
|
PDF
|
GD16521
GD16521
STM-16
OC-48
DK-2740
|
laser diode for free space communication
Abstract: GD16521-48BA GD16521-D STM-16 DIODE h4 1027ib 50W 50 ohm termination
Text: 2.5 Gbit/s Re-timing Laser Driver GD16521 an Intel company Preliminary General Description Features laser diode. A modulation current control loop maintains a constant modulation current for the laser diode, or alternatively maintains a constant extinction ratio of the laser diode.
|
Original
|
PDF
|
GD16521
GD16521
STM-16
OC-48
DK-2740
laser diode for free space communication
GD16521-48BA
GD16521-D
DIODE h4
1027ib
50W 50 ohm termination
|
semiconductor
Abstract: hirect H507CH Hirect diode H400TB
Text: SEMICONDUCTOR DESIGN GUIDE Hind Rectifiers Ltd ISO 9001-2000 Contents Page no. ► Rectifier Diodes 1 Top Hat Type 2) Capsules and Fast Recovery Diode 3) Modules Isolated Base) a) Diode-Diode Modules b) Single Phase Bridge c) Three Phase Bridge 1 3 5 5 5
|
Original
|
PDF
|
|
DD1200S33K2C
Abstract: FZ1200R33KF2C BC 2500 ZL 8
Text: Technische Information / technical information DD1200S33K2C IGBT-Module IGBT-modules Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values $ &' *+ &' ( )*+ % / /+ $ % 4(! 6 17 ,- ( 9 ,8 4 ( ! 8 &' ( ! )*+ &' ( ! )*+ < ,-.
|
Original
|
PDF
|
DD1200S33K2C
DD1200S33K2C
FZ1200R33KF2C
BC 2500
ZL 8
|
1S2473 DIODE equivalent
Abstract: 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx
Text: Status List HITACHI DIODE Vol.16-4 2002.11 Topic - Miniature Flat Lead Package Diode “HSN278WK” .2 Variable Capacitance Diodes for Electronic Tuning .4, 5
|
Original
|
PDF
|
HSN278WK"
HZC10
HZC11
HZC12
HZC13
HZC15
HZC16
HZC18
HZC20
HZC22
1S2473 DIODE equivalent
1S2473 equivalent
diode cross reference 1s2473
DIODE marking S4 59A
marking 62N SOT23
1S2471 equivalent
UHF/VHF TV Tuner HITACHI
DIODE 1N4148 LL-34
DIODE ZENNER C25
1N52xx
|
2N643
Abstract: BC237 MARKING DP SOT-363 DO204AA
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
|
Original
|
PDF
|
MMBD1010LT1
MMBD2010T1
MMBD3010T1
MMBD1010LT1
S218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
2N643
BC237
MARKING DP SOT-363
DO204AA
|
BC237
Abstract: MMBD2005T1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
|
Original
|
PDF
|
MMBD1005LT1
MMBD2005T1
MMBD3005T1
MMBD1005LT1
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
BC237
|
marking dp sot363
Abstract: BC237 transistor BF245 A marking A5 sot363 2N2222A plastic bc849 MMBD1010LT1 bf245 equivalent marking code a5 sot363
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
|
Original
|
PDF
|
MMBD1010LT1
MMBD2010T1
MMBD3010T1
MMBD1010LT1
S218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
marking dp sot363
BC237
transistor BF245 A
marking A5 sot363
2N2222A plastic
bc849
bf245 equivalent
marking code a5 sot363
|
2N301
Abstract: BC237 5111 sot-23 BC547 sot package sot-23 2N5670 equivalent
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
|
Original
|
PDF
|
MMBD1005LT1
MMBD2005T1
MMBD3005T1
MMBD1005LT1
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
2N301
BC237
5111 sot-23
BC547 sot package sot-23
2N5670 equivalent
|
Untitled
Abstract: No abstract text available
Text: Technische Information / technical information DD1200S33K2C IGBT-Module IGBT-modules Diode-Wechselrichter / diode-inverter Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values # %& ' * %& ' ()* $ / /* # $ 4'! 6 17 +, ' 9 +8 4 ' !
|
Original
|
PDF
|
DD1200S33K2C
|
Untitled
Abstract: No abstract text available
Text: Technische Information / technical information DD1200S33KL2C_B5 IGBT-Module IGBT-modules Diode-Wechselrichter / diode-inverter Vorläufige Daten preliminary data Höchstzulässige Werte / maximum rated values # $ % 0+ $ &' *+ &' ( )*+ $ 1 # % 6 27 5(" 1
|
Original
|
PDF
|
DD1200S33KL2C
|
M8 3F
Abstract: No abstract text available
Text: Technische Information / technical information DD1200S33KL2C_B5 IGBT-Module IGBT-modules Diode-Wechselrichter / diode-inverter Vorläufige Daten preliminary data Höchstzulässige Werte / maximum rated values # $ % 0+ $ &' *+ &' ( )*+ $ 1 # % 6 27 5(" 1
|
Original
|
PDF
|
DD1200S33KL2C
M8 3F
|
|
|
Untitled
Abstract: No abstract text available
Text: Technische Information / technical information DD1200S33KL2C_B5 IGBT-Module IGBT-modules Diode-Wechselrichter / diode-inverter Vorläufige Daten preliminary data Höchstzulässige Werte / maximum rated values # $ % 0+ $ &' *+ &' ( )*+ $ 1 # % 6 27 5(" 1
|
Original
|
PDF
|
DD1200S33KL2C
|
3mm ir receiver
Abstract: No abstract text available
Text: EVERLIGHT ELECTRONICS CO., LTD. DEVICE NUMBER : ECN : DIR-223-080 REV : 1.3 PAGE : 1/8 3mm Infrared LED MODEL NO : IR2234C/H5/L10 Features : High radiant intensity Peak wavelength p=940nm View angle 30 High reliability Description : EVERLIGHT’s Infrared Emitting Diode IR2234C/H5/L10 is a high intensity diode, molded in
|
Original
|
PDF
|
DIR-223-080
IR2234C/H5/L10
940nm
IR2234C/H5/L10)
3mm ir receiver
|
FP35R12KT4
Abstract: 32L0 IR 50H
Text: Technische Information / technical information FP35R12KT4_B11 IGBT-Module IGBT-modules EconoPIM 2 Modul PressFIT mit Trench/Feldstopp IGBT4 und EmCon4 Diode EconoPIM™2 module PressFIT with trench/fieldstop IGBT4 and EmCon4 diode IGBT-Wechselrichter / IGBT-inverter
|
Original
|
PDF
|
FP35R12KT4
32L0
IR 50H
|
Untitled
Abstract: No abstract text available
Text: Technische Information / technical information FF450R12ME3 IGBT-Module IGBT-modules EconoDUAL Modul mit Trench/Feldstop IGBT3 und High Efficiency Diode EconoDUAL™ module with trench/fieldstop IGBT3 and EmCon High Efficiency diode IGBT-Wechselrichter / IGBT-inverter
|
Original
|
PDF
|
FF450R12ME3
|
Untitled
Abstract: No abstract text available
Text: Technische Information / technical information FF225R12ME3 IGBT-Module IGBT-modules EconoDUAL Modul mit Trench/Feldstop IGBT3 und High Efficiency Diode EconoDUAL™ module with trench/fieldstop IGBT3 and EmCon High Efficiency diode IGBT-Wechselrichter / IGBT-inverter
|
Original
|
PDF
|
FF225R12ME3
|
BC237
Abstract: sot23 transistor marking JY
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Series Switching Diode BAV199LT1 This switching diode has the following features: • Low Leakage Current Applications Motorola Preferred Device • Medium Speed Switching Times • Available in 8 mm Tape and Reel
|
Original
|
PDF
|
BAV199LT1
BAV199LT3
inch/10
BAV199LT1
236AB)
S218A
MSC1621T1
MSC2404
MSD1819A
MV1620
BC237
sot23 transistor marking JY
|
BC237
Abstract: 2N2904 bf245b equivalent SOT23 Marking JX
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode This switching diode has the following features: BAV170LT1 • Low Leakage Current Applications Motorola Preferred Device • Medium Speed Switching Times • Available in 8 mm Tape and Reel
|
Original
|
PDF
|
BAV170LT1
BAV170LT3
inch/10
BAV170LT1
236AB)
t218A
MSC1621T1
MSC2404
MSD1819A
MV1620
BC237
2N2904
bf245b equivalent
SOT23 Marking JX
|
KY701
Abstract: FP50R06W2E3
Text: Technische Information / technical information FP50R06W2E3 IGBT-Module IGBT-modules EasyPIM Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und NTC EasyPIM™ module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and NTC
|
Original
|
PDF
|
FP50R06W2E3
KY701
FP50R06W2E3
|
diode 6300
Abstract: No abstract text available
Text: International IOR Rectifier Phase Control SCR .'•NN V>h5.a »V I vm/ Part Number 'ism High-Voltage °q (a (A) Vdrm Diode Rating* 't(AV) @ Tc (V) (V) (A) (b) (A) *Q)C(DC) (K/W) Notes Fax on Case Demand Outline | Number Key Thyristor / High Voltage Diode
|
OCR Scan
|
PDF
|
RKH170-04
1RKH170-08
1RKH170-12
IRKH170-14
RKHI70-I6
IRKH230-08
IRKH230-12
IRKH230-I6
IRKH230-18
IRKH230-20
diode 6300
|
Untitled
Abstract: No abstract text available
Text: O K I electronic components QL360N-5_ 1.3 urn High-Power Laser-Diode DIP Module G E N E R A L D ESC R IP TIO N The OL360N-5 is a 1.3 im, high-power laser diode DIP module with a single-mode fiber pigtail. The high-performance Oki laser diode achieved a single-mode fiber output of over 5 mW.
|
OCR Scan
|
PDF
|
QL360N-5_
OL360N-5
b724240
QD224b2
h5200
|
