PESDXL4UG
Abstract: marking JS SOT353
Text: DISCRETE SEMICONDUCTORS DATA SHEET ge MBD127 PESDxL4UG series Low capacitance quadruple ESD protection diode array in SOT353 package Product specification 2004 Mar 23 Philips Semiconductors Product specification Low capacitance quadruple ESD protection diode array in SOT353 package
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MBD127
OT353
OT353
SCA76
R76/01/pp9
PESDXL4UG
marking JS SOT353
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Untitled
Abstract: No abstract text available
Text: V23990-P769-A60-PM V23990-P769-A60Y-PM datasheet flow PIM 2 1200 V / 75 A Features flow 2 housing ● 3~rectifier,BRC,Inverter, NTC ● Very Compact housing, easy to route ● Mitsubishi IGBT and FWD Target Applications Schematic ● Motor Drives ● Power Generation
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V23990-P769-A60-PM
V23990-P769-A60Y-PM
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Untitled
Abstract: No abstract text available
Text: IRGR4607DPbF IRGS4607DPbF IRGB4607DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C C IC = 7.0A, TC =100°C E G tSC 5µs, TJ max = 175°C G E VCE(ON) typ. = 1.75V @ IC = 4.0A IRGR4607DPbF D-Pak n-channel
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IRGR4607DPbF
IRGS4607DPbF
IRGB4607DPbF
O-220AB
O-220
250uAâ
100uAâ
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Untitled
Abstract: No abstract text available
Text: IRGR4607DPbF IRGS4607DPbF IRGB4607DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C C IC = 7.0A, TC =100°C E G tSC 5µs, TJ max = 175°C C G G E VCE(ON) typ. = 1.75V @ IC = 4.0A n-channel Applications
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IRGR4607DPbF
IRGS4607DPbF
IRGB4607DPbF
O-220AB
IRGR/S/B4607DPbF
JESD47F)
O-220
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Untitled
Abstract: No abstract text available
Text: AUIRGB4062D1 AUIRGS4062D1 AUIRGSL4062D1 AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • IC Nominal = 24A Low VCE (on) Trench IGBT Technology Low Switching Losses
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AUIRGB4062D1
AUIRGS4062D1
AUIRGSL4062D1
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transistor model h1a
Abstract: IRGS4045D irgs4045 JESD-47 lm 230 wf1 JESD47F
Text: IRGS4045DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C IC 6.0A, TC = 100°C tsc > 5µs, Tjmax = 175°C C E G VCE on typ. 1.7V G D2-Pak IRGS4045DPbF E n-channel Applications • Appliance Motor Drive Inverters
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IRGS4045DPbF
capabilityC-Q101-005
transistor model h1a
IRGS4045D
irgs4045
JESD-47
lm 230 wf1
JESD47F
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Untitled
Abstract: No abstract text available
Text: IRGR4610DPbF IRGS4610DPbF IRGB4610DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C VCES = 600V C C C IC = 10A, TC = 100°C G tsc > 5µs, Tjmax = 175°C E VCE on typ. = 1.7V @ 6A n-channel Applications • Appliance Drives • Inverters
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IRGR4610DPbF
IRGS4610DPbF
IRGB4610DPbF
JESD47F)
O-220
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SDT-S-103DMR
Abstract: No abstract text available
Text: SDT-S-103DMR,601 Product Details Mid-Ran ge PC Board Re lays Previous 1 . 11 [12] 13 14 15 . 20 Next Quick Links Converted to EU RoHS/ELV Compliant Statement of Compliance Check Pricing & Availability Search for Tooling Product Feature Selector Compare Products
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SDT-S-103DMR
DT-S-103DMR
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DIODE GE 601
Abstract: No abstract text available
Text: SDT-S-106DMR,601 Product Details Mid-Ran ge PC Board Re lays Previous 1 . 11 12 [13] 14 15 . 20 Next Quick Links Converted to EU RoHS/ELV Compliant Statement of Compliance Check Pricing & Availability Search for Tooling Product Feature Selector Compare Products
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SDT-S-106DMR
DT-S-106DMR
DIODE GE 601
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116765-000
Abstract: 1162930000
Text: Datasheet WMF 2.5 Terminal Series NEW The WMF 2.5 multi-functional terminal series is uniquely designed for DCS marshalling where increased functionality, improved spacing, higher wiring density and ease of terminal installation are desired. The WMF 2.5 series is
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10-36VAC/DC
30-70VAC/DC
60-150VAC/DC
100-250VAC/DC
9/11-2M-LIT1019
116765-000
1162930000
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h05 diode
Abstract: No abstract text available
Text: Datasheet WMF 2.5 Terminal Series NEW The WMF 2.5 multi-functional terminal series is uniquely designed for DCS marshalling where increased functionality, improved spacing, higher wiring density and ease of terminal installation are desired. The WMF 2.5 series is
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10-36VAC/DC
30-70VAC/DC
60-150VAC/DC
100-250VAC/DC
9/11-2M-LIT1019
h05 diode
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IRF 504
Abstract: 005 418 irf 144
Text: PD- 95565 IRG4BC20UD-SPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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IRG4BC20UD-SPbF
200kHz
IRF 504
005 418
irf 144
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Untitled
Abstract: No abstract text available
Text: PD- 95565A IRG4BC20UD-SPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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5565A
IRG4BC20UD-SPbF
200kHz
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Untitled
Abstract: No abstract text available
Text: PD- 95565 IRG4BC20UD-SPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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IRG4BC20UD-SPbF
200kHz
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Untitled
Abstract: No abstract text available
Text: IXGX 32N170AH1 High Voltage IGBT with Diode VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 32 A
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32N170AH1
PLUS247
0-18A
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32N170AH1
Abstract: 32N17 PLUS247 6018A S3670 32n170
Text: IXGX 32N170AH1 High Voltage IGBT with Diode VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 32 A
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32N170AH1
PLUS247
0-18A
32N170AH1
32N17
PLUS247
6018A
S3670
32n170
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AN-994
Abstract: IRG4BC20KD-S IRGBC20KD2-S IRGBC20MD2-S
Text: PD -9.1598 PRELIMINARY IRG4BC20KD-S Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V
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IRG4BC20KD-S
AN-994
IRG4BC20KD-S
IRGBC20KD2-S
IRGBC20MD2-S
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IRGS4715D
Abstract: No abstract text available
Text: IRGB4715DPbF IRGS4715DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C C IC = 15A, TC =100°C tSC 5.5µs, TJ max = 175°C G VCE(ON) typ. = 1.7V @ IC = 8A G E • Industrial Motor Drive • UPS • Solar Inverters
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IRGB4715DPbF
IRGS4715DPbF
IRGB4715DPbFÂ
220ABÂ
IRGS4715DPbFÂ
JESD47F)
O-220
IRGS4715D
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Diode SY 356
Abstract: SY 356 sy356 34992 diode sy 345 C6042 Lautsprecher LP SY360 sy 360 stassfurt
Text: SERVICE-M ITTEILUNGEN V E B IN O U S T R tE V E R T R IE B R U N D F U N K U N D F E R N S E H E N r a d i o -television AUSGABE: Seite 1986 1-4 Mitteilung aus den VEB Fernsehgerätewerk Staßfurt 1. Ablösung der sowjetischen Ge-Diode D 7 D in den Geräten
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2001/DBBtjT
Diode SY 356
SY 356
sy356
34992
diode sy 345
C6042
Lautsprecher LP
SY360
sy 360
stassfurt
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B50C
Abstract: EH60 EH6004B EH6010B EH7502B EH7506B EH7510B
Text: Sînqie Phase Brida e Modules EH60, EH75 Dim. Inches Minimum _ A B C z K L M EH 6002S* E H 6004B « EH60068* EH e oo ae « EH 6010B» E H 6012B * _ 27.94 57.15 23.62 44.19 60.96 24.13 44.70 47.32 47.92 12.57 8.25 5.46 32.25 12.83 8.50 5.71 33.02 .198 .208
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EH6002SÂ
EH7502BÂ
EH6004BÂ
EH75048-
EH60068Â
EH7506BÂ
EH600SBÂ
EH6010BÂ
EH7510B*
EH6012B*
B50C
EH60
EH6004B
EH6010B
EH7502B
EH7506B
EH7510B
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SK2601 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O S V 2 S K2 601 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm 1 5 .9 MAX. Low Drain-Source ON Resistance
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2SK2601
20kil)
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diode sv 03
Abstract: MARK COLOR CODE 1S2359 VR-60 VR-61 color code diode
Text: SILICON R E C T IF IE R DIODE SKShows avalanche C olor code Effective current mA (Continuous, Ta=40'C) SV-1 Brown 500 C urre nt for 0 .3 V ( L e s s than 5 0 / iA ) , 100m A ( L e s s than 1V) V oltage for S V -2 Red 150 C urrent for 1.2V ( L e s s than 50j«A),
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50/iA)
100mA
50//A)
VR-60
VR-61
1S2359
11S2359
diode sv 03
MARK COLOR CODE
1S2359
color code diode
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