Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SK2601 Search Results

    SF Impression Pixel

    2SK2601 Price and Stock

    Toshiba America Electronic Components 2SK2601(PP,F)

    POWER FIELD-EFFECT TRANSISTOR, N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SK2601(PP,F) 76
    • 1 $3.24
    • 10 $3.24
    • 100 $1.782
    • 1000 $1.782
    • 10000 $1.782
    		Buy Now

    2SK2601 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK2601 Toshiba SILICON N CHANNEL MOS TYPE, FIELD EFFECT TRANSISTO Original PDF
    2SK2601 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    2SK2601 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK2601 Toshiba Original PDF
    2SK2601 Toshiba N-Channel Enhancement MOSFET Scan PDF
    2SK2601(F) Toshiba 2SK2601 - MOSFET N-CH 500V 10A 2-16C1B Original PDF

    2SK2601 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    toshiba K2601

    Abstract: K2601 toshiba transistor k2601 2SK2601 SC-65 toshiba 2-16c1b
    Text: 2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2601 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON-resistance : RDS (ON) = 0.56 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.)


    Original     		PDF 2SK2601 toshiba K2601 K2601 toshiba transistor k2601 2SK2601 SC-65 toshiba 2-16c1b

    toshiba K2601

    Abstract: K2601 jeita sc-65 2SK2601
    Text: 2SK2601 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅤ 2SK2601 ○ スイッチングレギュレータ 単位: mm z オン抵抗が低い。 : RDS (ON) = 0.56 Ω (標準) z 順方向伝達アドミタンスが高い。 : |Yfs| = 7.0 S (標準)


    Original     		PDF 2SK2601 SC-65 2-16C1B K2601 2002/95/EC) toshiba K2601 K2601 jeita sc-65 2SK2601

    toshiba K2601

    Abstract: K2601 toshiba transistor k2601
    Text: 2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2601 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.75 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.)


    Original     		PDF 2SK2601 toshiba K2601 K2601 toshiba transistor k2601

    toshiba K2601

    Abstract: toshiba transistor k2601 K2601 2SK2601 SC-65
    Text: 2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2601 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.75 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.)


    Original     		PDF 2SK2601 toshiba K2601 toshiba transistor k2601 K2601 2SK2601 SC-65

    2SK2601

    Abstract: SC-65
    Text: 2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2601 DC−DC Converter, Relay Drive and Motor Drive Applications l Low drain−source ON resistance : RDS (ON) = 0.75 Ω (typ.) l High forward transfer admittance : |Yfs| = 7.0 S (typ.)


    Original     		PDF 2SK2601 12transportation 2SK2601 SC-65

    toshiba transistor k2601

    Abstract: No abstract text available
    Text: 2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type −MOSV 2SK2601 DC−DC Converter, Relay Drive and Motor Drive Applications Low drain−source ON-resistance : RDS (ON) = 0.56 High forward transfer admittance : |Yfs| = 7.0 S (typ.) Unit: mm


    Original     		PDF 2SK2601 toshiba transistor k2601

    K2601

    Abstract: toshiba K2601 toshiba K2601 datasheet toshiba transistor k2601 2SK2601 SC-65
    Text: 2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2601 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.75 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.)


    Original     		PDF 2SK2601 K2601 toshiba K2601 toshiba K2601 datasheet toshiba transistor k2601 2SK2601 SC-65

    2SK2601

    Abstract: SC-65
    Text: 2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2601 DC−DC Converter, Relay Drive and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.75 Ω (typ.) High forward transfer admittance : |Yfs| = 7.0 S (typ.)


    Original     		PDF 2SK2601 2SK2601 SC-65

    K2601

    Abstract: toshiba K2601 datasheet toshiba K2601 toshiba transistor k2601 2SK2601 SC-65
    Text: 2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2601 DC−DC Converter, Relay Drive and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.75 Ω (typ.) High forward transfer admittance : |Yfs| = 7.0 S (typ.)


    Original     		PDF 2SK2601 K2601 toshiba K2601 datasheet toshiba K2601 toshiba transistor k2601 2SK2601 SC-65

    K2601

    Abstract: toshiba K2601 2SK2601 jeita sc-65
    Text: 2SK2601 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅤ 2SK2601 ○ スイッチングレギュレータ 単位: mm z オン抵抗が低い。 : RDS (ON) = 0.75 Ω (標準) z 順方向伝達アドミタンスが高い。 : |Yfs| = 7.0 S (標準)


    Original     		PDF 2SK2601 SC-65 2-16C1B K2601 2002/95/EC) K2601 toshiba K2601 2SK2601 jeita sc-65

    Untitled

    Abstract: No abstract text available
    Text: 2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2601 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON-resistance : RDS (ON) = 0.56 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.)


    Original     		PDF 2SK2601

    5252 F 1009 4-pin

    Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
    Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF

    Toshiba TMPA8873

    Abstract: TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853
    Text: 2007-5 SYSTEM CATALOG TV Solutions Guide Digital and Analog Flat TV Organizations Contents ● ICs for Tuners…………………………………4-5 Digital Broadcasting Digital Broadcast Signal Processing DRAM ● PIF/SIF Systems…………………………………6


    Original     		PDF SCE0001C S-167 SCE0001D Toshiba TMPA8873 TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853

    2SK2056

    Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
    Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1


    Original     		PDF BCE0017B 2SK2056 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078

    MOSFET TOSHIBA 2SK2917

    Abstract: 2sK2750 equivalent 2sk2997 2SK3759 2SJ618 2sk3067 2SK3767 2SK2842 equivalent 2SK2837 equivalent 2SK2843 equivalent
    Text: Power MOSFET High Voltage:more than 150V Dec, 2003 TOSHIBA Semiconductor Company Discrete Semiconductor Division 2003 Dec DP0540004_01 1/16 Trend of High Speed and High Voltage Power MOSFETs R D S (ON )* Q s w ( O h m * n C) 8 VDSS=200V RDS(ON)@VGS=10V 6


    Original     		PDF DP0540004 MOSFET TOSHIBA 2SK2917 2sK2750 equivalent 2sk2997 2SK3759 2SJ618 2sk3067 2SK3767 2SK2842 equivalent 2SK2837 equivalent 2SK2843 equivalent

    2SK3567 equivalent

    Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
    Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


    Original     		PDF BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    2SK3878 equivalent

    Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
    Text: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)


    Original     		PDF 2SK2963 2SK2962 2SJ508 2SJ509 2SK3670 2SJ313 2SJ338 2SK2013 2SK2162 2SJ360 2SK3878 equivalent 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718

    K2601

    Abstract: 2SK2601 SC-65
    Text: T O S H IB A 2SK2601 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2601 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S U n it in mm DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS


    OCR Scan     		PDF 2SK2601 K2601 2SK2601 SC-65

    K2601

    Abstract: 2SK2601 SC-65
    Text: T O S H IB A 2SK2601 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O S V 2SK2601 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 1 ^ Q MAY •


    OCR Scan     		PDF 2SK2601 K2601 2SK2601 SC-65

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2601 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2601 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS • • • • INDUSTRIAL APPLICATIONS Unit in mm 1 5.9 M A X.


    OCR Scan     		PDF 2SK2601 20kii)

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2601 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE tt-M O S V 2SK2601 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE A N D M O TOR DRIVE APPLICATIONS • • • • INDUSTRIAL APPLICATIONS Unit in mm


    OCR Scan     		PDF 2SK2601 --10A, J--25

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2601 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O S V 2 S K2 601 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm 1 5 .9 MAX. Low Drain-Source ON Resistance


    OCR Scan     		PDF 2SK2601 20kil)

    2SK2601

    Abstract: SC-65
    Text: T O S H IB A 2SK2601 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2601 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS • • • • INDUSTRIAL APPLICATIONS Unit in mm


    OCR Scan     		PDF 2SK2601 SC-65