Gex DIODE
Abstract: Gex 66 diode GEX 51 DIODE GEX 54 DIODE marking code KE diode diode marking GDE 38 SMJ30 diode Marking Code lm tvs diode GEP 86 A marking diode KE
Text: SURFACE MOUNT TVS DIODE Electrical Characteristics, 5.0 to 30 Volts TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Part Peak Voltage Clamping Current & Leakage Number Reverse VBR @ IT Voltage
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C5DB02
Gex DIODE
Gex 66 diode
GEX 51 DIODE
GEX 54 DIODE
marking code KE diode
diode marking GDE 38
SMJ30
diode Marking Code lm tvs
diode GEP 86 A
marking diode KE
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GEX 51 DIODE
Abstract: Gex DIODE Gex 66 diode marking code SM diode 218 Gex marking code KE diode diode GEP 86 A DIODE gde 18 diode gde 78 Diode GEG
Text: SURFACE MOUNT TVS DIODE Electrical Characteristics, 5.0 to 30 Volts TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Part Peak Voltage Clamping Current & Leakage Number Reverse VBR @ IT Voltage
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C5DB02
GEX 51 DIODE
Gex DIODE
Gex 66 diode
marking code SM diode
218 Gex
marking code KE diode
diode GEP 86 A
DIODE gde 18
diode gde 78
Diode GEG
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PK P6KE 200A
Abstract: SLD30-018 436 6V8A 1.5KA36CA N10H kt 201-500 P6KA36CA P6KA 335 Diode N10Z P6KA18CA
Text: PRODUCT CATALOG & DESIGN GUIDE DIODE Transient Voltage Suppression TVS Diode Products Littelfuse Circuit Prot Solutions Portf Consumer Electronics Telecom White Goods Medical Equipment TVSS and Power S DESIGN SUPPORT Live Application Design and Technical Support—Tap into our expertise. Littelfuse engineers are available around the world to help you address design challenges and develop
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EC111
EC2111v1E0804
PK P6KE 200A
SLD30-018
436 6V8A
1.5KA36CA
N10H
kt 201-500
P6KA36CA
P6KA 335
Diode N10Z
P6KA18CA
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GDE 13a DIODE
Abstract: diode marking GDE 38 diode 009 6V8A marking diode 47C sot23 NEC D 882 p GEX 36A DIODE Diode Gfg 6f MOTOROLA 727 36A Diode GFP 56A GFM 16A
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA SOTĆ23 Dual Monolithic Common Anode Zener MMBZ5V6ALT1 ADDITIONAL VOLTAGES AVAILABLE Transient Voltage Suppressor For ESD Protection Motorola Preferred Device This dual monolithic silicon zener diode is designed for applications requiring transient
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OT-23
GDE 13a DIODE
diode marking GDE 38
diode 009 6V8A
marking diode 47C sot23
NEC D 882 p
GEX 36A DIODE
Diode Gfg 6f
MOTOROLA 727 36A
Diode GFP 56A
GFM 16A
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bu 450 GDF
Abstract: SMA marking code LG sma marking code kn marking sm DO-214AA lg73 J15A marking sm marking SM 98 sma MARKING mp BQ 714
Text: SURFACE MOUNT Transient Voltage Suppressor TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Outline Part Peak Voltage Clamping Current & Leakage Dimensions in mm Number Reverse VBR @ IT Voltage
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C3B04
bu 450 GDF
SMA marking code LG
sma marking code kn
marking sm DO-214AA
lg73
J15A
marking sm
marking SM 98
sma MARKING mp
BQ 714
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bu 450 GDF
Abstract: diode gde 78 J15A GEZ DIODE SMA marking code LG GGG 92 marking sm J11A J14A J16A
Text: SURFACE MOUNT Transient Voltage Suppressor TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Outline Part Peak Voltage Clamping Current & Leakage Dimensions in mm Number Reverse VBR @ IT Voltage
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C3B04
bu 450 GDF
diode gde 78
J15A
GEZ DIODE
SMA marking code LG
GGG 92
marking sm
J11A
J14A
J16A
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bu 3 GDG 125
Abstract: marking CODE smb J36 diode 13.8 8w zener diode DO-214A sma marking sm RG DO-214AA smj58 24 DO-214A bu 450 GDF diode gde 61 81g diode
Text: SURFACE MOUNT Transient Voltage Suppressor TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Outline Part Peak Voltage Clamping Current & Leakage Dimensions in mm Number Reverse VBR @ IT Voltage
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C398BB02
C398BB03
bu 3 GDG 125
marking CODE smb J36 diode
13.8 8w zener diode
DO-214A sma
marking sm RG DO-214AA
smj58
24 DO-214A
bu 450 GDF
diode gde 61
81g diode
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GEZ 44 A diode
Abstract: No abstract text available
Text: Transient Voltage Suppression Diodes Surface Mount – 1500W > SMCJ-HR series SMCJ-HR Series RoHS Description TVS Diode Arrays SPA Family of Products Uni-directional The SMCJ-HR High Reliability series is designed specifically to protect sensitive electronic equipment from
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E230531
DO-214AB
16mm/7â
RS-481
GEZ 44 A diode
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Untitled
Abstract: No abstract text available
Text: Transient Voltage Suppression Diodes Surface Mount – 1500W > SMCJ-HRA series SMCJ-HRA Series RoHS Description TVS Diode Arrays SPA Family of Products Uni-directional The SMCJ-HRA High Reliability series is designed specifically to protect sensitive electronic equipment from
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-PRF-19500.
DO-214AB
16mm/13â
RS-481
16mm/7â
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diode BFT 99
Abstract: Diode GEP 5C Diode GFT DIODE BFT marking code GEZ DIODE GEZ 304 DIODES transient voltage suppressor diode diode marking GDE on semiconductor
Text: Features • ■ ■ Surface Mount SMC package Standoff Voltage: 5.0 to 170 volts Power Dissipation: 1500 watts CD214C Transient Voltage Suppressor Diode Series General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly
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CD214C
DO-214AB
diode BFT 99
Diode GEP 5C
Diode GFT
DIODE BFT marking code
GEZ DIODE
GEZ 304 DIODES
transient voltage suppressor diode
diode marking GDE on semiconductor
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GEZ DIODES
Abstract: diode BFT 99 GFX DIODE GHM PF t54c 214B CD214C CD214C-T170A CD214C-T26A diode smc bfk
Text: Features • ■ ■ Surface Mount SMC package Standoff Voltage: 5.0 to 170 volts Power Dissipation: 1500 watts CD214C Transient Voltage Suppressor Diode Series General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly
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CD214C
DO-214AB
bid004)
e/IPA0408
GEZ DIODES
diode BFT 99
GFX DIODE
GHM PF
t54c
214B
CD214C-T170A
CD214C-T26A
diode smc bfk
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clairex
Abstract: V7560
Text: CLAIREX ELECTRONICS DIV- 1TE I> • 21427^=1 GDGÜ77Ö 2 T-m-u CLED1 CLED1A CLED1B CLED1C Gallium Arsenide Infrared Emitting Diode GENERAL DESCRIPTION — The Clairex CLED1 is a Gallium Arsenide infrared emitting diode in a lensed hermetic TO-46 package. It emits an intense band of radia
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CLE01
clairex
V7560
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20kv diode
Abstract: ESJA53-20A HIGH VOLTAGE DIODE 20kv L#IF4
Text: 1, SCOPE This specification provide the ratings and the requirements for high voltage si Iicon diode ESJA53-20A made by FUJI ELECTRIC CO.LTD. 2. OUT VIEW Shape and dimensions are described in Fig.3. 3. IDENTIFICATION The diode shall be marked with Cathode Mark and Lot No.
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ESJA53-20A
D0047Ã
ESJA53-CEA
20kv diode
HIGH VOLTAGE DIODE 20kv
L#IF4
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Untitled
Abstract: No abstract text available
Text: s e MIKROn SKiiP 102 GD 120 - 304 WT Absolute Maximum Ratings |Conditions 1> V a lu e s Units IGBT & Inverse Diode V ces Operating DC link voltage Vcc 10 T heatsink = 25 °C lc T heatsin k = 25 °C, tp < 1 ms ICM IGBT & Diode Ti 3’ , AC, 1 min. Visol41
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613bb71
QQ05Q01
0GQ50G3
00G5D04
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Untitled
Abstract: No abstract text available
Text: SONY CORP/COMPONENT PROPS MTE Ô3fl23fl3 Q Q Q E ^ m D B ISONY SLD201 U/V SONY. T -m -osr 20mW High Power Laser Diode Description Package Outline SLD201 U/V is a gain-guided high-power laser diode fabricated by MOCVD. Unit: mm SLD201U Features . Low noise S/ N = 8 0 dB Typ. at 5 mW.
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3fl23fl3
SLD201
SLD201U
L0201U/V
T-41-05
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UAF42
Abstract: UAF 41 resistor 0.22 Volvi uaf41 uch41
Text: U A F 42 U A F 41 U A F 4 2 (U A F 4 1 ) V a ria b le -m u diode-pentode Fig. 1 The U A F 42, show ing the electrode system (approxim ately actual size). The UAF 42 is a variable-mu diode-pentode for A.C./D.C. receivers having a heater circuit carrying 100 mA. The pentode section is intended for use
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DSAIH0002553
Abstract: No abstract text available
Text: B ^ T T Ñ t E R Ñ a t io n a T ^ G3E D | 1 1 7 ‘ H A 3 GDGGDbM □ |~ T -O I-C I _ Type No.1 N51_ GOLD BONDED GERMANIUM DIODE 6 Lake Street PO Box 1436 Lawrence, MA 01841 BKC International Electronics Inc. Telephone 617 681-0392
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MIL-S-19500,
DSAIH0002553
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j45ac
Abstract: No abstract text available
Text: 4 b ô b 2 2 b GDGlbflS ITS « I X Y m xYS MCC220 iTAV= 2 X 250 A MCD220 v RRM= 600-1600 V Thyristor Modules Thyristor/Diode Modules Type V V Version 1 Version 1 | 700 900 1300 1500 1700 600 800 1200 1400 1600 MCC220*06io1 MCC220-08io1 MCC220-12io1 MCC220-14ÍO1
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MCC220
MCD220
06io1
MCC220-08io1
MCC220-12io1
MCC220-14Ã
MCC220-16Ã
MCD220-08Ã
j45ac
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Untitled
Abstract: No abstract text available
Text: GaAs INFRARED EMITTING DIODE OPTOELECTRONICS LED55BF/CF, LED56F PACKAGE DIMENSIONS DESCRIPTIO N The LED55BF/CF and LED56F are 940nm LEDs in a wide angle, TO-46 package. SEATING II FEA TU RES G ood optical to m echanical alignm ent SYMBOL INCHES MIN. A ¿b
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LED55BF/CF,
LED56F
LED55BF/CF
LED56F
940nm
74bbflSl
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3R3TI20E-080
Abstract: R611 DIODE T53
Text: 3R3TI20E-080 • K»~*M : Outline Drawings DIODE and TYRISTOR MODULE ■4$^ : Features •i i — >a ? • 7 71 Glass Passivation Chip Easy Connection • ifelSJK Insulated Type • Large di/dt • dv/dtWS*'"^c # V-' Large dv/dt : Applications • Inverters
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3R3TI20E-080
50/60HzÃ
3R3TI20E-080
R611
DIODE T53
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tt 3043
Abstract: cp clare relay hg 1002 sol 4011 be 1N3888 clare mercury-wetted relay 1n3884 1N3890 clare mercury relay z037 1N3885
Text: MIL SPECS I C J Q C m a i H S OODBTOS 1 | MIL-S-19500/304B AMENDMENT 3 11 Auqust 1987 WOTSTDTfre-AMENDMENT 2 8 July 1985 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST-RECOVERY TYPES 1N3885, 1N3886, 1N3888, 1N3890, 1N3891, 1N3893,
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MIL-S-19500/304B
1N3885,
1N3886,
1N3888,
1N3890,
1N3891,
1N3893,
1N3890R,
1N3891R,
1N3893R
tt 3043
cp clare relay hg 1002
sol 4011 be
1N3888
clare mercury-wetted relay
1n3884
1N3890
clare mercury relay
z037
1N3885
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Untitled
Abstract: No abstract text available
Text: FAST RECOVERY DIODE 50VF30 50VF40 50VF30F 50VF40F 5.5A/300~ 400V/trr : 40nsec FEATURES • TO-251AA Case o TO-252AA Case, Surface Mount Device 0 Ultra - Fast Recovery o Low Forward Voltage Drop ° Low Power Loss « High Surge Capability • 100 Volts thru 400 Votls
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50VF30
50VF40
50VF30F
50VF40F
A/300~
00V/trr
40nsec
O-251AA
O-252AA
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Untitled
Abstract: No abstract text available
Text: FAST RECOVERY DIODE GSF10A60 GSF10A60B 11A/600V/trr :50nsec FSF10A60 FSF10A60B FEATURES o Similar to TO-220AC and TO-220AB Case ° Fully Molded Isolation Case F-Type o Ultra-Fast Recovery o Low Forward Voltage Drop o Low Power Loss, High Efficiency o High Surge Capability
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GSF10A60
GSF10A60B
1A/600V/trr
50nsec
FSF10A60
FSF10A60B
O-220AC
O-220AB
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DSAIH0002563
Abstract: No abstract text available
Text: ID MINI-MELF-SMD LL4938 Applications Silicon Switching Diode Used in general purpose applications,where high voltage and switching speed are important BKC can produce generic equivalents to JAN / TX TXV and S level per / MIL-S-19500 /1 6 9 with internal source control drawings. Use HR, HRX,
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LL4938
MIL-S-19500
LL-34/35
DO-213AA)
DO-35
4031-B
LL4938
DSAIH0002563
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