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    MCD220 Price and Stock

    IXYS Corporation MCD220-28io3

    Discrete Semiconductor Modules
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    Mouser Electronics MCD220-28io3
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    Omega Engineering FT-PMCD22-02-12

    Polypro Coupling Insert, Str |Omega FT-PMCD22-02-12
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    Newark FT-PMCD22-02-12 Bulk 50 1
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    Omega Engineering FT-MCD22-04

    Brass Coupling Insert, Str |Omega FT-MCD22-04
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    Newark FT-MCD22-04 Bulk 11 1
    • 1 $38.49
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    Omega Engineering FT-MCD22-02

    Brass Coupling Insert, Str |Omega FT-MCD22-02
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    Newark FT-MCD22-02 Bulk 1
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    Omega Engineering FT-MCD22-03

    Brass Coupling Insert, Str |Omega FT-MCD22-03
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    Newark FT-MCD22-03 Bulk 1
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    MCD220 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MCD220-08IO1 IXYS 800V thyristor modules thyristor/diode module Original PDF
    MCD220-12IO1 IXYS 1200V thyristor modules thyristor/diode module Original PDF
    MCD220-14IO1 IXYS 1400V thyristor modules thyristor/diode module Original PDF
    MCD220-16IO1 IXYS 1600V thyristor modules thyristor/diode module Original PDF
    MCD220-18io1 IXYS Thyristor HYBRID DOUBLER MODULE 1800V 9000A 7CASE STYLE Original PDF

    MCD220 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    13006 TRANSISTOR

    Abstract: transistor 13006 E 13006 13006 MCD217 PMBFJ620 FET MARKING 13006 D
    Text: PMBFJ620 Dual N-channel field-effect transistor Rev. 01 — 11 May 2004 Product data sheet 1. Product profile 1.1 General description Two N-channel symmetrical junction field-effect transistors in a SOT363 package. CAUTION This device is sensitive to electrostatic discharge ESD . Therefore care should be taken


    Original     		PDF PMBFJ620 OT363 MSC895 13006 TRANSISTOR transistor 13006 E 13006 13006 MCD217 PMBFJ620 FET MARKING 13006 D

    PMBFJ620,115

    Abstract: No abstract text available
    Text: PMBFJ620 Dual N-channel field-effect transistor Rev. 2 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description Two N-channel symmetrical junction field-effect transistors in a SOT363 package. CAUTION This device is sensitive to ElectroStatic Discharge ESD . Therefore care should be taken


    Original     		PDF PMBFJ620 OT363 PMBFJ620,115

    pmbfj310

    Abstract: No abstract text available
    Text: 3 SO T2 PMBFJ308; PMBFJ309; PMBFJ310 N-channel silicon field-effect transistors Rev. 4 — 20 September 2011 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel silicon junction field-effect transistors in a SOT23 package. CAUTION


    Original     		PDF PMBFJ308; PMBFJ309; PMBFJ310 PMBFJ308 pmbfj310

    J310

    Abstract: J309 application note J308 J310 applications J309 MCD212 MCD221 VHF Transistors
    Text: DISCRETE SEMICONDUCTORS DATA SHEET J308; J309; J310 N-channel silicon field-effect transistors Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 30 Philips Semiconductors Product specification N-channel silicon field-effect transistors


    Original     		PDF

    PMBFJ620

    Abstract: No abstract text available
    Text: PMBFJ620 Dual N-channel field-effect transistor Rev. 2 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description Two N-channel symmetrical junction field-effect transistors in a SOT363 package. CAUTION This device is sensitive to ElectroStatic Discharge ESD . Therefore care should be taken


    Original     		PDF PMBFJ620 OT363 771-PMBFJ620-T/R PMBFJ620

    J310

    Abstract: J309 J310 Application Note Transistor J310 J308 j310 equivalent MCD217 MCD212 MCD221
    Text: DISCRETE SEMICONDUCTORS DATA SHEET J308; J309; J310 N-channel silicon field-effect transistors Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 30 Philips Semiconductors Product specification N-channel silicon field-effect transistors


    Original     		PDF

    marking code 10 sot23

    Abstract: MCD217 PMBFJ310 MCD221 PMBFJ308 PMBFJ309 PMBFJ310,2
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ308; PMBFJ309; PMBFJ310 N-channel silicon field-effect transistors Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Sep 11 Philips Semiconductors Product specification


    Original     		PDF PMBFJ308; PMBFJ309; PMBFJ310 marking code 10 sot23 MCD217 PMBFJ310 MCD221 PMBFJ308 PMBFJ309 PMBFJ310,2

    pmbfj310

    Abstract: PMBFJ308 PMBFJ309 13403 PMBFJ310,2
    Text: PMBFJ308; PMBFJ309; PMBFJ310 N-channel silicon field-effect transistors Rev. 03 — 23 July 2004 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel silicon junction field-effect transistors in a SOT23 package. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected


    Original     		PDF PMBFJ308; PMBFJ309; PMBFJ310 MSC895 pmbfj310 PMBFJ308 PMBFJ309 13403 PMBFJ310,2

    j45ac

    Abstract: No abstract text available
    Text: 4 b ô b 2 2 b GDGlbflS ITS « I X Y m xYS MCC220 iTAV= 2 X 250 A MCD220 v RRM= 600-1600 V Thyristor Modules Thyristor/Diode Modules Type V V Version 1 Version 1 | 700 900 1300 1500 1700 600 800 1200 1400 1600 MCC220*06io1 MCC220-08io1 MCC220-12io1 MCC220-14ÍO1


    OCR Scan     		PDF MCC220 MCD220 06io1 MCC220-08io1 MCC220-12io1 MCC220-14Ã MCC220-16Ã MCD220-08Ã j45ac

    40n80

    Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
    Text: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18


    OCR Scan     		PDF 5-10A 52-14N01 52-16N01 55-12N 55-14N07 55-18N 60-08N 60-16N 62-08N 62-12N 40n80 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI

    06io1

    Abstract: MCD132-16101 MCD72-12I08B MCD72-04IO8B MCD95-04IO8B MCD95-04 MCD95-12I08B 12io1 MCD95-16I08B MCD250-08IO1
    Text: Thyristor / Diode Modules 'TAV = 27-320 A Type *TFIMS *18« A 45°C 10 ms A E 72 873 M MCD26-16IOBB • MCD26-14io8B MC026-12loBB • MCD26-06io8B • MCD26-04io8B MCD44-18lo8B MCD44-16io8B • MCD44-14Ì08B MCD44-12Ì08B MCD44-08IO8B • MCD44-06ÌO8B • MCD44-04io8B


    OCR Scan     		PDF O-240 MCD26-16IOBB MCD26-14io8B MC026-12loBB MCD26-06io8B MCD26-04io8B MCD44-18lo8B MCD44-16io8B MCD44-14 MCD44-12 06io1 MCD132-16101 MCD72-12I08B MCD72-04IO8B MCD95-04IO8B MCD95-04 MCD95-12I08B 12io1 MCD95-16I08B MCD250-08IO1

    MCD40-12

    Abstract: MCD40 MCD16208IO MCD95-14IO8 MCD56-16 MCD72-16 06io1 MCD224-22IO1 mcd401 M11-P
    Text: Thyristor / Diode Modules ¡ h t iif i lw = 27-250 A Type v RRM Tc V rms rT TSM □ p ^"vJM 45°C 10ms th,/C per Chip V A °C A A V m °C K/W MCD26-08io8B MCD26-12io8B MCD26-14io8B MCD26-16io8B 800 1200 1400 1600 27 85 50 520 0.85 11 125 0.88 MCD40-12ÌO6


    OCR Scan     		PDF MCD26-08io8B MCD26-12io8B MCD26-14io8B MCD26-16io8B MCD40-12 MCD40-16io6 MCD44-08io8B MCD44-12io8B MCD44-14io8B MCD44-16io8B MCD40 MCD16208IO MCD95-14IO8 MCD56-16 MCD72-16 06io1 MCD224-22IO1 mcd401 M11-P

    LT 220 diode

    Abstract: No abstract text available
    Text: nixYS ' !. :-u r’ Thyristor Modules Thyristor/Diode Modules MCC 220 MCD 220 ^TRMS ^TAVM = 2 x 400 A = 2 x 250 A V RRM = 800 -1600 V v RSM V RRM v DSM v DRM V V Version 1 Version 1 900 1300 1500 1700 800 1200 1400 1600 MCC 220-08ÌO1 MCC 220-12io1 MCC 220-14io1


    OCR Scan     		PDF 220-12io1 220-14io1 220-16io1 4bflb22b LT 220 diode

    c2785

    Abstract: MCD95-16IO8B MCD162 10MSA
    Text: Thyristor / Diode Modules b t i i ì ib ü tf lTAV = 27-320 A Type VR *TAV *TSM 450C Tc V„ ► New MCD26-08ÌO8B MCD26-12io8B MCD26-14io8B MCD26-16Ì08B MCD44-08io8B MCD44-12io8B MCD44-14io8B MCD44-16Ì08B MCD44-18Ì08B MCD56-08ÌO8B MCD56-12Ì08B MCD56-14io8B


    OCR Scan     		PDF MCD26-08 MCD26-12io8B MCD26-14io8B MCD26-16 MCD44-08io8B MCD44-12io8B MCD44-14io8B MCD44-16 MCD44-18 MCD56-08 c2785 MCD95-16IO8B MCD162 10MSA

    MCD162-08IO1

    Abstract: A2785 MCD162-14IO1 10MSA
    Text: Thyristor / Diode Modules •tfcih ¡tr itìi lTAV = 27-320 A Type MCD.J08 RRM ^DRM V MCD26-08io8B MCD26-12io8B MCD26-14io8B MCD26-16Ì08B MCD44-08io8B MCD44-12io8B MCD44-14io8B MCD44-16io8B MCD44-18io8B p TSM thJC 45°C 10 ms A O m iì K/W 800 49 85 80 1150


    OCR Scan     		PDF O-240 MCD26-08io8B MCD26-12io8B MCD26-14io8B MCD26-16 MCD44-08io8B MCD44-12io8B MCD44-14io8B MCD44-16io8B MCD44-18io8B MCD162-08IO1 A2785 MCD162-14IO1 10MSA

    8n80

    Abstract: DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B
    Text: Alphanumerical Index c CS 142-12 io8 CS 142-16 ¡08 CS 23-08 io2 CS 23-12 ¡02 CS 23-16 io2 3S 300-12 io3 2S 300-16 io3 CS 35-08 io4 CS 35-12 io4 CS 35-14 io4 CS 72-12 ¡08 CS 72-16 ¡08 CS 8-08 io2 CS 8-12 io2 CS 8-12 io2 CS1011 -18io1 CS1011-22io1 CS1011-25io1


    OCR Scan     		PDF CS1011 -18io1 CS1011-22io1 CS1011-25io1 CS1250-12io1 CS1250-14io1 CS1250-16io1 CS20-12 CS20-14 CS20-16 8n80 DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B

    mm036

    Abstract: ml075-12 MM036-12 mm036-16 mm075-12io1 mm062 DSI 12-06A MDD95-16N1B ME03 21N100
    Text: 17 17 17 17 17 17 17 17 17 17 17 17 17 17 13 15 15 13 13 13 13 14 14 14 14 13 13 13 13 13 15 15 15 13 13 13 13 13 13 14 14 14 14 14 14 13 13 13 15 15 15 14 14 14 DSAI35-12A DSAI 35-16A DSAI 35-18A DSAI 75-12A DSAI 75-16A DSAI 75-18A DSEI 12-06A DSEI 12-1OA


    OCR Scan     		PDF DSAI35-12A 5-16A 5-18A 5-12A 2-06A 12-1OA 2-12A 2x30-Q4C mm036 ml075-12 MM036-12 mm036-16 mm075-12io1 mm062 DSI 12-06A MDD95-16N1B ME03 21N100

    mcc44-16i01b

    Abstract: MCD40 MCC44-14I08B MCC44-18I08B MCD310-20io1 MCD312-16I01 mcd162-16io1 MCD250-08IO1 MCD255-16IO1 MCC44-16-I01B
    Text: Thyristor / Diode Modules Iw MCD.io8/.io6 = 2 7 -3 2 0 A Type *TSM New 45°C 10 ms A thJC MCD.io1 Package style thCK per Chip per Chip K/W Outlines pages 52,53,54 K/W MCD26-08ÌO8B M CD26-12io8B MCD26-14Ì08B M CD26-16io8B 800 1200 1400 1600 M CD40-12io6


    OCR Scan     		PDF MCD26-08 CD26-12io8B MCD26-14 CD26-16io8B CD40-12io6 MCD40-16 MCD44-08 MCD44-12 CD44-14io8B CD44-16io8B mcc44-16i01b MCD40 MCC44-14I08B MCC44-18I08B MCD310-20io1 MCD312-16I01 mcd162-16io1 MCD250-08IO1 MCD255-16IO1 MCC44-16-I01B

    DSE 130 -06A

    Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50
    Text: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01


    OCR Scan     		PDF AXC-051 AXC-051-R AXC-102 AXV-002 015-14to1 2x45-16io1 2x60-08io1 2x60-12io1 2x60-14io1 2x60-16io1 DSE 130 -06A vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50