BAR63
Abstract: Q62702-A1038 a1038 transistor BR diode A1038 BAR63-04 BAR64 Q62702-A1036 Q62702-A1037 Q62702-A1039
Text: BAR 63. Silicon PIN Diode l PIN diode for high speed switching of RF signals l Low forward resistance l Very low capacitance l For frequencies up to 3 GHz Type Marking Ordering code tape and reel BAR 63 BAR 63-04 BAR 63-05 BAR 63-06 G3 G4 G5 G6 Q62702-A1036
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OT-23
Q62702-A1036
Q62702-A1037
Q62702-A1038
Q62702-A1039
BAR63
BAR63-04
BAR63
Q62702-A1038
a1038 transistor
BR diode
A1038
BAR64
Q62702-A1036
Q62702-A1037
Q62702-A1039
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FF450R12ME4
Abstract: 220 e87 4506G
Text: Technische Information / technical information FF450R12ME4 IGBT-Module IGBT-modules - EconoDUAL 3 mit Trench/Feldstop IGBT4 und optimierter Emitter Controlled Diode - EconoDUAL™3 with trench/fieldstop IGBT4 and optimized Emitter Controlled Diode IGBT-Wechselrichter / IGBT-inverter
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FF450R12ME4
FF450R12ME4
220 e87
4506G
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FF300R12ME4
Abstract: No abstract text available
Text: Technische Information / technical information FF300R12ME4 IGBT-Module IGBT-modules - EconoDUAL 3 mit Trench/Feldstop IGBT4 und optimierter Emitter Controlled Diode - EconoDUAL™3 with trench/fieldstop IGBT4 and optimized Emitter Controlled Diode IGBT-Wechselrichter / IGBT-inverter
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FF300R12ME4
FF300R12ME4
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Y1600
Abstract: FS800R06A2E3
Text: Technische Information / technical information FS800R06A2E3 IGBT-Module IGBT-modules HybridPACK2 Modul mit Trench/Feldstop IGBT³ und Emitter Controlled Diode HybridPACK2 module with trench/fieldstop IGBT³ and Emitter Controlled diode IGBT-Wechselrichter / IGBT-inverter
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FS800R06A2E3
Y1600
FS800R06A2E3
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Untitled
Abstract: No abstract text available
Text: US 3A . US 3M power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter /4 Surface mount diode Ultrafast silicon rectifier diodes US 3A.US 3M
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FS800R07A2E3
Abstract: FS800R07 diode 2dl C0148 JG4100 FS800 kb 61
Text: Technische Information / technical information FS800R07A2E3 IGBT-Module IGBT-modules HybridPACK 2 Modul mit Trench/Feldstop IGBT³ und Emitter Controlled Diode HybridPACK 2 module with trench/fieldstop IGBT³ and Emitter Controlled diode IGBT-Wechselrichter / IGBT-inverter
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FS800R07A2E3
FS800R07A2E3
FS800R07
diode 2dl
C0148
JG4100
FS800
kb 61
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules FF1400R12IP4 PrimePACK 3 Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC PrimePACK™3 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC
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FF1400R12IP4
367C4326BC
97F6F8
36F1322
A2CB36
1231423567896AB
4112CD3567896EF
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information FF900R12IP4 IGBT-Module IGBT-modules PrimePACK 2 Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC PrimePACK™2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC
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FF900R12IP4
367C4326BC
97F6F8
36F1322
A2CB36
1231423567896AB
4112CD3567896EF
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474F3
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules IFS75B12N3E4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4, Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with trench/fieldstop IGBT4, emitter controlled 4 diode and current sense shunt
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IFS75B12N3E4
E1322
FF326DC
FC26E1
2313F
D36134
1231423567896AB
54F36C
4112CD3567896BE
474F3
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LTC4098-3.6
Abstract: No abstract text available
Text: Technische Information / technical information FF600R12IP4 IGBT-Module IGBT-modules PrimePACK 2 Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC PrimePACK™2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC
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FF600R12IP4
367C4326BC
97F6F8
36F1322
A2CB36
1231423567896AB
4112CD3567896EF
LTC4098-3.6
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FF200R12KE4
Abstract: No abstract text available
Text: Technische Information / technical information FF200R12KE4 IGBT-Module IGBT-modules 62mm C-Serien Modul mit Trench/Feldstopp IGBT4 und optimierter EmCon Diode 62mm C-series module with trench/fieldstop IGBT4 and optimized EmCon Diode IGBT-Wechselrichter / IGBT-inverter
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FF200R12KE4
FF200R12KE4
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LTC4098-3.6
Abstract: 6N16 l436 SXA-01GW-P0.6
Text: Technische Information / technical information IGBT-Module IGBT-modules IFS75B12N3T4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4, Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with trench/fieldstop IGBT4, emitter controlled 4 diode and current sense shunt
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IFS75B12N3T4
CEE32
1322D14
CEE326
732CF5CD
2313ECEC
1231423567896AB2CDEF1B6
54E36F
4112F
LTC4098-3.6
6N16
l436
SXA-01GW-P0.6
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W6 Diode
Abstract: No abstract text available
Text: SKN 2F50 THYRISTOR BRIDGE,SCR,BRIDGE Stud Diode Fast Recovery Rectifier Diode SKN 2F50 Features # $%&'' *+,)()- *.&(/) # $+01 ()*+,)(2 # 34 1+ 5666 7 (),)(8) ,+'1&/) # 9)(%)1:* %)1&' *&8) ;:1. /'&88 # :<8='&1+( >.()&-)- 81=- ?$@ AB +( 5CDEFG 3HI $JHK &<+-) 1+ 81=-
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FIW6C56
FIW6C563HI
T566V
W6 Diode
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S3 DIODE schottky
Abstract: 3522V PHN603S SO24 SOT137-1
Text: Philips Semiconductors Product specification TrenchMOS/ Schottky diode array Three phase brushless d.c. motor driver FEATURES PHN603S SYMBOL • Schottky diode across each MOSFET • Low on-state resistance • Fast switching • Logic level compatible • Surface mount package
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PHN603S
S3 DIODE schottky
3522V
PHN603S
SO24
SOT137-1
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DIN 16901
Abstract: DIN 16901 130 DIN ISO 2768-M DIN 16901 150 W60Y FS450R12KE4 DIN 16901 140 220 e87
Text: Technische Information / technical information FS450R12KE4 IGBT-Module IGBT-modules EconoPACK + B-Serie Modul mit Trench/Feldstopp IGBT4 und optimierter EmCon Diode EconoPACK™+ B-series module with trench/fieldstop IGBT4 and optimized EmCon diode IGBT-Wechselrichter / IGBT-inverter
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FS450R12KE4
DIN 16901
DIN 16901 130
DIN ISO 2768-M
DIN 16901 150
W60Y
FS450R12KE4
DIN 16901 140
220 e87
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Untitled
Abstract: No abstract text available
Text: SKR 2F50 THYRISTOR BRIDGE,SCR,BRIDGE Stud Diode Fast Recovery Rectifier Diode SKR 2F50 Features # $%&'' *+,)()- *.&(/) # $+01 ()*+,)(2 # 34 1+ 5666 7 (),)(8) ,+'1&/) # 9)(%)1:* %)1&' *&8) ;:1. /'&88 # :<8='&1+( >.()&-)- 81=- ?$@ AB +( 5CDEFG 3HI $JKL *&1.+-) 1+ 81=-
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FIW6C56
FIW6C563HI
T566V
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LTC4098-3.6
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules FF900R12IP4D PrimePACK 2 Modul mit Trench/Feldstopp IGBT4, größerer Emitter Controlled 4 Diode und NTC PrimePACK™2 module with Trench/Fieldstop IGBT4, increased Emitter Controlled 4 diode and NTC
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FF900R12IP4D
366C4326BC
86F6F8
36F1322
A2CB36
5C336C
1231423567896AB
4112CD3567896EF
LTC4098-3.6
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules FS200R06KE3 EconoPACK 3 mit schnellem Trench/Feldstop IGBT³ und EmCon3 Diode EconoPACK™3 with fast trench/fieldstop IGBT³ and EmCon3 diode Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter
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FS200R06KE3
CEE32
1322D14
CEE326
632CF5CD
1CE73
2313ECEC
3265CDDC14ECF
1231423567896AB2CDEF1B6
54E36F
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E72445
Abstract: EFD02CF EFD18 F100 500v 50a scr
Text: Series EF 50-170Amp • DIODE • SCR/DIODE Modules • High Thermal Efficiency These circuits provide complete power control in a single package, utilizing high thermal efficiency to assure long life and reliable performance. Twelve standard models provide 2500 Vrms
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50-170Amp
E72445)
EFD02CF
E72445
EFD02CF
EFD18
F100
500v 50a scr
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alcoa electrical joint compound
Abstract: SF1154 dissipator presspak diode A800 A800L A800LA A800LB G322L A800LD
Text: A800 77mm RECTIFIER DIODE 2600V / 4400A SPCO The A800 rectifier diode features a nominal 77mm silicon junction diameter design , manufactured by the proven multi-diffusion process. High reverse voltage blocking capability is optimized with moderate recovery current and low forward voltage.
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185oC
-40oC
A800Lerford
LS2037
SF1154
DC550
G322L
alcoa electrical joint compound
dissipator
presspak diode
A800
A800L
A800LA
A800LB
G322L
A800LD
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Dow Corning 735
Abstract: dow corning silicone compound alcoa electrical joint compound 2600 corning SF1154 dissipator Silicones dow corning 732 A801CA A801CB
Text: A801 77mm RECTIFIER DIODE 3200V / 3900A SPCO The rectifier diode feature a nominal 77mm silicon junction diameter design , manufactured by the proven multi-diffusion process. High reverse voltage blocking capability is optimized with moderate recovery current and low forward voltage.
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LS2037
SF1154
DC550
G322L
Dow Corning 735
dow corning silicone compound
alcoa electrical joint compound
2600 corning
dissipator
Silicones
dow corning 732
A801CA
A801CB
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SF1154
Abstract: SF-1154
Text: A800 77mm RECTIFIER DIODE 2600V / 4400A The A800 rectifier diode features a nominal 77mm silicon junction diameter design , manufactured by the proven multi-diffusion process. High reverse voltage blocking capability is optimized with moderate recovery current and low forward voltage.
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A800LM
A800LE
A800LD
A800LC
A800LB
A800LA
A800L
A800PT
A800PN
LS2037
SF1154
SF-1154
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L6210
Abstract: No abstract text available
Text: r ^ J S C S - T H O M S O N DUAL SCHOTTKY DIODE BRIDGE • MONOLITHIC ARRAY OF EIGHT SCHOTTKY DIODES ■ HIGH EFFICIENCY . 4A PEAK CURRENT ■ LOW FORWARD VOLTAGE ■ FAST RECOVERYTIME . TW O SEPARATED DIODE BRIDGES D E S C R IP T IO N The L6210 is a monolithic IC containing eight Schottky diodes arranged as two separated diode
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L6210
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10SC4
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode l ^ t l l OUTLINE Package : E-pack DE10SC4 Unit: mm Weight 0.326tf Typ 4 0 V 10 A Feature G6 • SM D • SMD • P rrsm 7 ' K 5 > î / x (SSE • Prrsm Rating Type wo I H igh lo R a tin g -S m a ll-P K G 10SC4 p -/Hü»XM
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DE10SC4
326tf
10SC4
or10ms
J532-1)
10SC4
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