5d 3kv
Abstract: equivalent components of diode 1N4249 Semtech alpac alpac scba2 SCPA2 single phase half controlled full wave bridge rec semtech kv-pac SI96-01 2PFT2 SCBAR4F
Text: Semtech Corporation Power Discretes This publication presents technical information for the several product families that comprise the Semtech Corporation Power Discretes Product-Lines. The families include Hi-Rel qualified rectifiers, bridges, ceramic capacitors, transient voltage
|
Original
|
PDF
|
REV9111
PD-DB-0409
5d 3kv
equivalent components of diode 1N4249
Semtech alpac
alpac scba2
SCPA2
single phase half controlled full wave bridge rec
semtech kv-pac
SI96-01
2PFT2
SCBAR4F
|
2KV DIODE
Abstract: semtech alpac three phase full wave uncontrolled rectifier sdhd5k 1N6467 fast recovery diode 1a trr 200ns SCPA2 1N6123 JAN 1N6463 JANTX 73A 552
Text: Semtech Corporation Power Discretes This publication presents technical information for the several product families that comprise the Semtech Corporation Power Discretes Product-Lines. The families include Hi-Rel qualified rectifiers, bridges, ceramic capacitors, transient voltage suppressors and custom assemblies. These are available in a variety of packages. Complete device specifications and typical
|
Original
|
PDF
|
PD-DB-0810
2KV DIODE
semtech alpac
three phase full wave uncontrolled rectifier
sdhd5k
1N6467
fast recovery diode 1a trr 200ns
SCPA2
1N6123 JAN
1N6463 JANTX
73A 552
|
Untitled
Abstract: No abstract text available
Text: MSMCGLCE6.5A – MXLSMCGLCE170Ae3, MSMCJLCE6.5A – MXLSMCJLCE170Ae3 Available 1500 Watt Low Capacitance Surface Mount Transient Voltage Suppressor Screening in reference to MIL-PRF-19500 available DESCRIPTION This high-reliability surface mount Transient Voltage Suppressor TVS product family includes a rectifier
|
Original
|
PDF
|
MXLSMCGLCE170Ae3,
MXLSMCJLCE170Ae3
MIL-PRF-19500
DO215AB
DO-214AB
RF01002,
DO-215AB)
|
Untitled
Abstract: No abstract text available
Text: PD-97271 RevA IRAM136-0461G Series 4A, 600V Plug N DriveTM Integrated Power Module for Energy Efficient Motor Drives Description International Rectifier’s IRAM136-0461G is an Integrated Power Module developed and optimized for electronic motor control in energy saving applications. Targeting the sub 300W three-phase motor drive
|
Original
|
PDF
|
PD-97271
IRAM136-0461G
IRAM136-0461G
027-E2D24
AN1049
|
full wave BRIDGE RECTIFIER 1044
Abstract: igbt sinewave inverter ntc 10K B 3950 inverter 3kw schematic 3 phase ac sinewave motor controller single ic marking R1E AN-1044 AN1049 IR21365 IRAM136-0461G
Text: PD-97271 RevA IRAM136-0461G Series 4A, 600V Plug N DriveTM Integrated Power Module for Energy Efficient Motor Drives Description International Rectifier’s IRAM136-0461G is an Integrated Power Module developed and optimized for electronic motor control in energy saving applications. Targeting the sub 300W three-phase motor drive
|
Original
|
PDF
|
PD-97271
IRAM136-0461G
IRAM136-0461G
027-E2D24
AN1049
full wave BRIDGE RECTIFIER 1044
igbt sinewave inverter
ntc 10K B 3950
inverter 3kw schematic
3 phase ac sinewave motor controller single ic
marking R1E
AN-1044
AN1049
IR21365
|
IRGPS66160DPBF
Abstract: No abstract text available
Text: IRGPS66160DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C IC = 160A, TC =100°C tSC 5µs, TJ max = 175°C G VCE(ON) typ. = 1.65V @ IC = 120A E IRGPS66160DPbF Super 247 n-channel Applications • Welding
|
Original
|
PDF
|
IRGPS66160DPbF
IRGPS66160DPbFÂ
JESD47F)
IRGPS66160DPBF
|
Untitled
Abstract: No abstract text available
Text: TECHNICAL DATA SHEET Gort Road Business Park, Ennis, Co. Clare, Ireland. Tel: +353 0 65 6840044, Fax: +353 (0) 65 6822298 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803 Website: http://www.microsemi.com - High Reliability controlled devices
|
Original
|
PDF
|
MSMCJLCE170A,
MSMCGLCE170A,
SMBGLCR80"
RF01002
|
Untitled
Abstract: No abstract text available
Text: IRGP6640DPbF IRGP6640D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 40A, TC =100°C tSC 5µs, TJ max = 175°C G C G IRGP6640DPbF TO-247AC E VCE(ON) typ. = 1.65V @ IC = 24A n-channel
|
Original
|
PDF
|
IRGP6640DPbF
IRGP6640D-EPbF
IRGP6640DPbFÂ
247ACÂ
IRGP6640Dâ
247ADÂ
IRGP6640DPbF/IRGP6640D-EPbF
JESD47F)
O-247AC
O-247AD
|
Untitled
Abstract: No abstract text available
Text: IRGP6630DPbF IRGP6630D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 30A, TC =100°C tSC 5µs, TJ max = 175°C G C G IRGP6630DPbF TO-247AC E VCE(ON) typ. = 1.65V @ IC = 18A n-channel
|
Original
|
PDF
|
IRGP6630DPbF
IRGP6630D-EPbF
IRGP6630DPbFÂ
247ACÂ
IRGP6630Dâ
247ADÂ
IRGP6630DPbF/IRGP6630D-EPbF
O-247AC
O-247AD
|
Untitled
Abstract: No abstract text available
Text: IRGP6690DPbF IRGP6690D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 90A, TC =100°C tSC ≥ 5µs, TJ max = 175°C G G VCE(ON) typ. = 1.65V @ IC = 75A E E G G Gate C Collector Features Benefits High efficiency in a wide range of applications
|
Original
|
PDF
|
IRGP6690DPbF
IRGP6690D-EPbF
O-247AD
O-247AC
IRGP6690DPbF/IRGP6690D-EPbF
JESD47F)
|
Bridge Rectifier, 35A, 600V
Abstract: No abstract text available
Text: IRGP6650DPbF IRGP6650D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 50A, TC =100°C tSC 5µs, TJ max = 175°C G C G IRGP6650DPbF TO-247AC E VCE(ON) typ. = 1.65V @ IC = 35A n-channel
|
Original
|
PDF
|
IRGP6650DPbF
IRGP6650D-EPbF
IRGP6650DPbFÂ
247ACÂ
IRGP6650Dâ
247ADÂ
IRGP6650DPbF/IRGP6650D-EPbF
O-247AC
O-247AD
Bridge Rectifier, 35A, 600V
|
Untitled
Abstract: No abstract text available
Text: IRGP6660DPbF IRGP6660D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 60A, TC =100°C tSC ≥ 5µs, TJ max = 175°C G G VCE(ON) typ. = 1.7V @ IC = 48A E G G Gate C Collector Features Benefits High efficiency in a wide range of applications
|
Original
|
PDF
|
IRGP6660DPbF
IRGP6660D-EPbF
O-247AD
O-247AC
IRGP6660DPbF/IRGP6660D-EPbF
JESD47F)
|
Untitled
Abstract: No abstract text available
Text: IRGR2B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-FAST SOFT RECOVERY DIODE Features • Low VCE ON Non Punch Through IGBT technology Low Diode VF 10µs Short Circuit Capability Square RBSOA Ultra-soft Diode Reverse Recovery Characteristics
|
Original
|
PDF
|
IRGR2B60KDPbF
|
cii 117 q
Abstract: ic 5657
Text: IRGP4078DPbF IRGP4078D-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • Low VCE ON Trench IGBT Technology • Low Switching Losses • Maximum Junction temperature 175°C • 5 µs short circuit SOA
|
Original
|
PDF
|
IRGP4078DPbF
IRGP4078D-EP
IRGP4078D-EPbF
O-247AC
O-247AD
JESD47F)
cii 117 q
ic 5657
|
|
|
Untitled
Abstract: No abstract text available
Text: IRGP4262DPbF IRGP4262D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C G G IC = 40A, TC =100°C tSC 5.5µs, TJ max = 175°C G C VCE(ON) typ. = 1.7V @ IC = 24A C n-channel Applications G Gate E G IRGP4262D-EPbF
|
Original
|
PDF
|
IRGP4262DPbF
IRGP4262D-EPbF
O-247AD
O-247AC
|
IRGP4740DPBF
Abstract: No abstract text available
Text: IRGP4740DPbF IRGP4740D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C IC = 40A, TC =100°C tSC ≥ 5.5µs, TJ max = 175°C G G VCE(ON) typ. = 1.7V @ IC = 24A E G G Gate C Collector Features C E IRGP4740D-EPbF TO-247AD
|
Original
|
PDF
|
IRGP4740DPbF
IRGP4740D-EPbF
O-247AD
O-247AC
IRGP4740DPbF/IRGP4740D-EPbF
JESD47F)
IRGP4740DPBF
|
Untitled
Abstract: No abstract text available
Text: IRGP4750DPbF IRGP4750D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C IC = 50A, TC =100°C tSC 5.5µs, TJ max = 175°C E G VCE(ON) typ. = 1.7V @ IC = 35A C G IRGP4750DPbF TO-247AC E n-channel Applications
|
Original
|
PDF
|
IRGP4750DPbF
IRGP4750D-EPbF
IRGP4750DPbFÂ
247ACÂ
IRGP4750Dâ
247ADÂ
IRGP4750DPbF/IRGP4750D-EPbF
JESD47F)
O-247AC
O-247AD
|
Untitled
Abstract: No abstract text available
Text: IRG7PSH54K10DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C IC = 65A, TC =100°C tSC 10µs, TJ max = 150°C G C VCE(ON) typ. = 1.9V @ IC = 50A G E n-channel Applications • Industrial Motor Drive • UPS
|
Original
|
PDF
|
IRG7PSH54K10DPbF
IRG7PSH54K10DPbFÂ
Super-247
JESD47F)
|
Untitled
Abstract: No abstract text available
Text: IRGP4790PbF IRGP4790-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V IC = 90A, TC =100°C tSC 5.5µs, TJ max = 175°C C E G VCE(ON) typ. = 1.7V @ IC = 75A C G IRGP4790PbF TO-247AC E n-channel Applications
|
Original
|
PDF
|
IRGP4790PbF
IRGP4790-EPbF
IRGP4790PbFÂ
247ACÂ
IRGP4790â
247ADÂ
IRGP4790PbF/IRGP4790-EPbF
O-247AC
JESD47F)
O-247AD
|
Untitled
Abstract: No abstract text available
Text: IRG7PG35UPbF IRG7PG35U-EPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE ON trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient
|
Original
|
PDF
|
IRG7PG35UPbF
IRG7PG35U-EPbF
O-247AC
O-247AD
IRG7PG35UPbF/IRG7PG35U-EPbF
|
Untitled
Abstract: No abstract text available
Text: IRG7PH46UDPbF IRG7PH46UD-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE ON trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient
|
Original
|
PDF
|
IRG7PH46UDPbF
IRG7PH46UD-EP
O-247AD
|
suppressor 5v
Abstract: zener Transient Voltage Suppressor Transient Voltage Suppressor diode application note ICTE-10 ICTE-15 P4KE16A P6KE16A AP6KE
Text: SELECTING THE OPTIMUM VOLTAGE TRANSIENT SUPPRESSOR Although the published data for several transient suppressors may appear similar enough to make the devices seem interchangeable, careful analysis can rule out nearly identical parts whose use could prove disastrous.
|
Original
|
PDF
|
|
IRKH162-14D20
Abstract: IRKH135-16D25
Text: I 4Ô55452 0Glb7S5 157 M I N R SERIES IRK.135, .136, .141, .142, .161, .162 International S Rectifier SCR I SCR and SCR / DIODE Features NEW INT-A-pak Power Modules INTERNATIONAL RECTIFIER • High voltage ■ Electrically isolated base plate ■ 3000 V RMS isolating voltage
|
OCR Scan
|
PDF
|
10ohri
36-Thermal
IRKH162-14D20
IRKH135-16D25
|
10K1
Abstract: AN-599 MBR4020PF MBR4030PF
Text: MBR4020PF MBR4030PF SCH OTTKY B A R R IE R R E C T IF IE R S HOT C A R R IE R POWER R EC T IF IER 40 A M P ER E 20,30, V O L T S . employing the Schottky Barrier principle in a large area metalto-silicon power diode. State of the art geometry features epitaxial
|
OCR Scan
|
PDF
|
MBR4020PF
MBR4030PF
AN-599.
10K1
AN-599
MBR4030PF
|
