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    MBR4020PF Search Results

    MBR4020PF Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MBR4020PF Motorola Semiconductor Data Library Volume 3 1974 Scan PDF
    MBR4020PF Motorola The European Selection Data Book 1976 Scan PDF
    MBR4020PF Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    MBR4020PF Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF

    MBR4020PF Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: MBR4020PF Diodes General Purpose Schottky Rectifier Military/High-RelN I O Max.(A) Output Current40 @Temp (øC) (Test Condition)50# V(RRM)(V) Rep.Pk.Rev. Voltage20 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.800 V(FM) Max.(V) Forward Voltage630m @I(FM) (A) (Test Condition)40


    Original
    PDF MBR4020PF Current40 Voltage20 Voltage630m Current20m Current150m StyleDO-21

    10K1

    Abstract: AN-599 MBR4020PF MBR4030PF
    Text: MBR4020PF MBR4030PF SCH OTTKY B A R R IE R R E C T IF IE R S HOT C A R R IE R POWER R EC T IF IER 40 A M P ER E 20,30, V O L T S . employing the Schottky Barrier principle in a large area metalto-silicon power diode. State of the art geometry features epitaxial


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    PDF MBR4020PF MBR4030PF AN-599. 10K1 AN-599 MBR4030PF

    powec rm 1110

    Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
    Text: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor


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    PDF 111ii MZ5558 Z5555, Z5556, MZ5557 powec rm 1110 rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor

    MR912

    Abstract: MR918 BY197 MR916 MR842 MR841 MR881 MR891 MR811 1N5824
    Text: 1M u st be drated for reverse power dissipation see data sheet . A 1.0 1.2 1.2 2 3 B Y 196 B Y 197 B Y 198 BYX55350 BYX55600 M R816 M R817 M R818 40 75 B Y 29 6 BY297 BY298 B Y 199 70 50 40 50 175 150 125 750 50 0 750 70 50 150 30 257 (D O -5) . . M R890


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    PDF MR810 MR910 MR840 MR811 MR911 MR841 MR881 MR891 MR812 BY297 MR912 MR918 BY197 MR916 MR842 MR841 MR891 1N5824

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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