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    DIODE FR103 Search Results

    DIODE FR103 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE FR103 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DI108S

    Abstract: SK5100 CP2506 sb5200 SB840
    Text: Diode & Rectifiers Diode & Rectifiers MERITEK RoHS TABLE OF CONTENT • PLASTIC PASSIVATED JUNCTION RECTIFIER o General Purpose


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    PDF 38x45Â DI108S SK5100 CP2506 sb5200 SB840

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


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    PDF MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45

    FR101G

    Abstract: FR102G FR103G FR104G FR105G FR106G FR107G RS-296-E
    Text: FR101G FR107G WTE POWER SEMICONDUCTORS Pb 1.0A GLASS PASSIVATED FAST RECOVERY DIODE Features ! Glass Passivated Die Construction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data


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    PDF FR101G FR107G DO-41, MIL-STD-202, DO-41 FR101G FR102G FR103G FR104G FR105G FR106G FR107G RS-296-E

    DIODE FR107

    Abstract: FR105 diode FR107 diode FR10X FR101 FR102 FR103 FR104 FR105 FR106
    Text: FR101 FR107 WTE POWER SEMICONDUCTORS Pb 1.0A FAST RECOVERY DIODE Features ! Diffused Junction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data ! ! ! ! ! ! ! C Case: DO-41, Molded Plastic


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    PDF FR101 FR107 DO-41, MIL-STD-202, DO-41 DIODE FR107 FR105 diode FR107 diode FR10X FR101 FR102 FR103 FR104 FR105 FR106

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


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    PDF MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50

    rgp10j diode

    Abstract: FR207 diode diode rgp10g by399 diode RGP15G diode diode fr302 diode RGP30G RGP30B SDO-15 FR104 diode
    Text: Axial Diode Series FAST RECOVERY RECTIFIERS Maximum Maximum Maximum TYPE Peak Maximum Average Rectified Current Reverse at Half-wave Resistive load 50HZ Voltage Forward Peak Reverse Surge Current Current at 50HZ PRV and Maximum Forward Recovery Superimposed TA=25°C


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    PDF 1N4933 DO-41 1N4934 1N4935 1N4936 DO-15 RGP15M rgp10j diode FR207 diode diode rgp10g by399 diode RGP15G diode diode fr302 diode RGP30G RGP30B SDO-15 FR104 diode

    mur1650

    Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
    Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and


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    PDF MBRB1045 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 mur1650 T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount

    FE16B

    Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
    Text: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —


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    PDF MBRP60035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 FE16B mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent

    DIODE FR107

    Abstract: Diode FR104 FR105 diode FR106-T3 FR10X FR101 FR102 FR103 FR103 diode FR105
    Text: FR101 FR107 WTE POWER SEMICONDUCTORS Pb 1.0A FAST RECOVERY DIODE Features Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data C Case: DO-41, Molded Plastic Terminals: Plated Leads Solderable per


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    PDF FR101 FR107 DO-41, MIL-STD-202, DO-41 DIODE FR107 Diode FR104 FR105 diode FR106-T3 FR10X FR101 FR102 FR103 FR103 diode FR105

    Untitled

    Abstract: No abstract text available
    Text: FR101 FR107 WTE POWER SEMICONDUCTORS Pb 1.0A FAST RECOVERY DIODE Features Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data C Case: DO-41, Molded Plastic Terminals: Plated Leads Solderable per


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    PDF FR101 FR107 DO-41, MIL-STD-202, DO-41

    Untitled

    Abstract: No abstract text available
    Text: FR101G FR107G WTE POWER SEMICONDUCTORS Pb 1.0A GLASS PASSIVATED FAST RECOVERY DIODE Features Glass Passivated Die Construction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data C Case: DO-41, Molded Plastic


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    PDF FR101G FR107G DO-41, MIL-STD-202, DO-41

    FR107G-TB

    Abstract: FR101G FR102G FR103G FR104G FR105G FR106G FR107G RS-296-E
    Text: FR101G FR107G WTE POWER SEMICONDUCTORS Pb 1.0A GLASS PASSIVATED FAST RECOVERY DIODE Features Glass Passivated Die Construction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data C Case: DO-41, Molded Plastic


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    PDF FR101G FR107G DO-41, MIL-STD-202, DO-41 FR107G-TB FR101G FR102G FR103G FR104G FR105G FR106G FR107G RS-296-E

    Untitled

    Abstract: No abstract text available
    Text: FR101 FR107 1.0A FAST RECOVERY DIODE WON-TOP ELECTRONICS Pb Features  Diffused Junction     Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability B A A Mechanical Data      


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    PDF FR101 FR107 DO-41, MIL-STD-202, DO-41

    PK MUR 460

    Abstract: pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360
    Text: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,


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    PDF MBR340 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 PK MUR 460 pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360

    MR2835S equivalent

    Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
    Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


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    PDF MBR6045PT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MR2835S equivalent A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502

    equivalent components of diode 1N5399

    Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
    Text: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


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    PDF MBR6045WT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 equivalent components of diode 1N5399 diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode

    FR101G

    Abstract: FR102G FR103G FR104G FR105G FR106G FR107G
    Text: LESHAN RADIO COMPANY, LTD. FR101G FR107G FAST GPP DIODES TYPE Maximum Peak Reverse Voltage Maximum Average Maximum Rectified Current Forward Peak @ Half-Wave Surge Current @ Resistive Load 60Hz 8.3ms Superimposed PRV FR101G FR102G FR103G FR104G FR105G


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    PDF FR101G FR107G FR102G FR103G FR104G FR105G FR106G FR101G FR102G FR103G FR104G FR105G FR106G FR107G

    T1A 250v

    Abstract: his-8a Jamicon capacitor bel t1a 250v m7a90 0711-PN UTWHS ee-25 tuv philips zener diode ltec capacitor
    Text: SA06L48-V Specification MODEL NO.: CUSTOMER P/N: DESCRIPTION: ISSUED DATE: REVISION NO.: Page 1 of 1 SA06L48-V SWITCHING ADAPTER September 5, 2002 01 TABLE OF CONTENTS 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 INPUT REQUIREMENTS OUTPUT REQUIREMENTS EFFICIENCY PROTECTION REQUIREMENTS


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    PDF SA06L48-V SA06L48-V RD-SPEC/06L48-V 90Vac 264Vac 42S/Triad 04-0205C 0-0026A 10-0026B T1A 250v his-8a Jamicon capacitor bel t1a 250v m7a90 0711-PN UTWHS ee-25 tuv philips zener diode ltec capacitor

    ELECTROLYTIC capacitor, .10uF 50V

    Abstract: fairchild 2n60 MOSFET capacitor 330uF 10V Power Transformer EE-16 Electrolytic Capacitor 10uf 50V electrolytic capacitor, .1uF fairchild 1N4007 FAN100 fan102 2N60 MOSFET SMPS
    Text: www.fairchildsemi.com AN-6067 Design and Application of Primary-Side Regulation PSR PWM Controller FAN100 / FAN102 / FSEZ1016A / FSEZ1216 Abstract Features This application note describes a typical charger using the PSR controller. Both the features of this controller, as well


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    PDF AN-6067 FAN100 FAN102 FSEZ1016A FSEZ1216 ELECTROLYTIC capacitor, .10uF 50V fairchild 2n60 MOSFET capacitor 330uF 10V Power Transformer EE-16 Electrolytic Capacitor 10uf 50V electrolytic capacitor, .1uF fairchild 1N4007 2N60 MOSFET SMPS

    diode cross reference

    Abstract: IN5408 equivalent DIOTEC Electronics IN5408 diode 1N4008 PBL302 rgp20 17 diode rectifier 1N4000 1n4004 1n4002 RP602 PBP205
    Text: DIOTEC ELECTRONICS CORPORATION PRODUCT GUIDE TRUE VOID FREE VACUUM DIE SOLDERING SOFT GLASS DIODES HIGH VOLTAGE ULTRA FAST RECOVERY DISH DIODES TVS PRESS FIT WEB SITE: www.diotec-usa.com E-MAIL: Support@diotec-usa.com DIOTEC ELECTRONICS CORP. THE RECTIFIER SPECIALISTS


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    PDF

    TEA1601T

    Abstract: ON4959 12NC philips OQ0260HL TEA1601T/N5 ON4959 transistor TEA1601T/N2 tea1091 OQ0256HP TV power transistor ON4959
    Text: Philips Semiconductors, Inc. Product Discontinuation Notice DN49 Exhibit A June 30, 2003 SEE DN49 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.


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    PDF 31-dec-03 31-mrt-04 X3A-BFQ32 XAU2903CK XAU2903 30-dec-03 30-mrt-04 XAU2903CU XN5230CK XN5230 TEA1601T ON4959 12NC philips OQ0260HL TEA1601T/N5 ON4959 transistor TEA1601T/N2 tea1091 OQ0256HP TV power transistor ON4959

    Untitled

    Abstract: No abstract text available
    Text: FSEZ1307 Primary-Side-Regulation PWM with Power MOSFET Integrated Features Description • •   Low Standby Power: Under 30 mW   Green Mode: Linearly Decreasing PWM Frequency High-Voltage Startup Few External Components Constant-Voltage CV and Constant-Current (CC)


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    PDF FSEZ1307 FSEZ1307,

    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


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    PDF 1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503

    n539

    Abstract: 6A10 DIODE diode 2a05 FRI57 diode 6A10 Diode IN5398 N4003 diode k5 10-16 diode 1n5392 N5398
    Text: DIODE RECTIFIERS GENERAL PURPOSE /1A • 1.SA • 2A • 3A • 8A MAXIMUN Peak Reverse Voltage PRV Max Avg Rect Current @ Half-Wave Res Load 60Hz L @Ta 1N4001 1N4002 ÌN4003 1N4004 1N4005 1N400Ó 1N4007 50 100 200 400 600 800 1000 10 1.0 1.0 Ì0 1.0 1.0


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    PDF 1N4001 1N4002 N4003 1N4004 1N4005 1N400Ó 1N4007 1N5392 1N5393 1N5394 n539 6A10 DIODE diode 2a05 FRI57 diode 6A10 Diode IN5398 diode k5 10-16 diode 1n5392 N5398