diode 31 DF
Abstract: Kemet CAPACITOR DATE CODE MARKING suppressor diode smd IEC60063 100nF 63V polyester capacitor capacitor 100nf 63v MKT capacitor mkt 100nf 4019D
Text: F5B Capacitor / Diode unit METALLIZED POLYESTER FILM CAPACITOR WITH INTEGRATED BIDIRECTIONAL SUPPRESSOR DIODE HIGH PERFORMANCE PEAK REDUCTION Typical applications: these component units are used to strongly reduce transient phenomena and act as EMI-RFI suppressors for automotive motors and other suppression
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diode 31 DF
Kemet CAPACITOR DATE CODE MARKING
suppressor diode smd
IEC60063
100nF 63V polyester capacitor
capacitor 100nf 63v MKT
capacitor mkt 100nf
4019D
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Untitled
Abstract: No abstract text available
Text: F5B Capacitor / Diode unit METALLIZED POLYESTER FILM CAPACITOR WITH INTEGRATED BIDIRECTIONAL SUPPRESSOR DIODE HIGH PERFORMANCE PEAK REDUCTION Typical applications: these component units are used to strongly reduce transient phenomena and act as EMI-RFI suppressors for automotive motors and other suppression
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Untitled
Abstract: No abstract text available
Text: F5B Capacitor / Diode unit metallized POLYester film CAPACITOR with Integrated bidirectional suppressor diode High performance peak reduction Typical applications: these component units are used to strongly reduce transient phenomena and act as EMI-RFI suppressors for automotive motors and other suppression
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LNCQ12PS
Abstract: No abstract text available
Text: Specifcations Laser Diode LNCQ12PS AlGaInP - Red Laser Diode (Record and reproduction for DVD) Features • Oscillation wavelength : 657 nm • Output power : 160 mW (Pulse) • Small size package : f5.6 mm Package Code • L5 Absolute Maximum Ratings Ta = 25°C
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LNCQ12PS
LNCQ12PS
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5BJC4100
Abstract: F5BHC 5BBC3820
Text: General Purpose, Pulse and DC Transient Suppression F5B Series Metallized Polyester Film with Integrated Suppression Diode, 18 – 63 VDC Overview Applications The F5B Series is a metallized polyester film capacitor with an integrated suppression diode encapsulated in a thermosetting
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Abstract: No abstract text available
Text: Specifcations Laser Diode LNC710PS AlGaAs-Infrared Laser Diode (For CD-R/RW) Features • Oscillation wavelength : 784 nm • Output power : 260 mW (Pulse) • Small size package : f5.6 mm Package Code • L5 Absolute Maximum Ratings Ta = 25°C Parameter
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LNC710PS
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5BJC4100
Abstract: No abstract text available
Text: General Purpose, Pulse and DC Transient Suppression F5B Series Metallized Polyester Film with Integrated Suppression Diode, 18 – 63 VDC Overview Applications The F5B Series is a metallized polyester film capacitor with an integrated suppression diode encapsulated in a thermosetting
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LNCQ15PS
Abstract: No abstract text available
Text: Specifcations Laser Diode LNCQ15PS AlGaInP - Red Laser Diode (Record and reproduction for DVD) Under development Features • Oscillation wavelength : 660 nm • Output power : 240 mW (Pulse) • Small size package : f5.6 mm Package Code • L5 Absolute Maximum Ratings
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LNCQ15PS
LNCQ15PS
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DIODE N7
Abstract: N7 diode
Text: General Purpose, Pulse and DC Transient Suppression F5B Series Metallized Polyester Film with Integrated Suppression Diode, 18 – 63 VDC Overview Applications The F5B Series is a metallized polyester film capacitor with an integrated suppression diode encapsulated in a thermosetting
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varistor smd marking code
Abstract: No abstract text available
Text: F5B Capacitor / Diode unit METALLIZED POLYESTER FILM CAPACITOR WITH INTEGRATED BIDIRECTIONAL SUPPRESSOR DIODE HIGH PERFORMANCE PEAK REDUCTION Typical applications: these component units are used to strongly reduce transient phenomena and act as EMI-RFI suppressors for automotive motors and other suppression
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varistor smd marking code
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capacitor 0.1 k 100 MKT
Abstract: No abstract text available
Text: F5B Capacitor / Diode unit metallized POLYester film CAPACITOR with Integrated bidirectional suppressor diode High performance peak reduction Typical applications: these component units are used to strongly reduce transient phenomena and act as EMI-RFI suppressors for automotive motors and other suppression
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capacitor 0.1 k 100 MKT
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IEC60063
Abstract: capacitor mkt 100nf
Text: F5B Capacitor / Diode unit METALLIZED POLYESTER FILM CAPACITOR WITH INTEGRATED BIDIRECTIONAL SUPPRESSOR DIODE HIGH PERFORMANCE PEAK REDUCTION Typical applications: these component units are used to strongly reduce transient phenomena and act as EMI-RFI suppressors for automotive motors and other suppression
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IEC60063
capacitor mkt 100nf
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capacitor 100nf 63v MKT
Abstract: IEC60063 DIODE smd marking AA diode marking df diode smd marking ck DIODE marking EG 94 kemet c.93 suppressor diode smd Diode HDB 5
Text: F5B Capacitor / Diode unit METALLIZED POLYESTER FILM CAPACITOR WITH INTEGRATED BIDIRECTIONAL SUPPRESSOR DIODE HIGH PERFORMANCE PEAK REDUCTION Typical applications: these component units are used to strongly reduce transient phenomena and act as EMI-RFI suppressors for automotive motors and other suppression
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capacitor 100nf 63v MKT
IEC60063
DIODE smd marking AA
diode marking df
diode smd marking ck
DIODE marking EG 94
kemet c.93
suppressor diode smd
Diode HDB 5
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capacitor 100nf 63v MKT
Abstract: smd code marking CK suppressor diode smd CK 78 smd varistor ck 100nF 63V polyester capacitor capacitor mkt 100nf
Text: F5B Capacitor / Diode unit metallized POLYester film CAPACITOR with Integrated bidirectional suppressor diode High performance peak reduction Typical applications: these component units are used to strongly reduce transient phenomena and act as EMI-RFI suppressors for automotive motors and other suppression
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capacitor 100nf 63v MKT
smd code marking CK
suppressor diode smd
CK 78 smd
varistor ck
100nF 63V polyester capacitor
capacitor mkt 100nf
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OF3604N-F5
Abstract: PDF PIN APD DIODE DESCRIPTION OF3603N-F5 PDEF3604N-F5-01 PEDF3604N-F5-01
Text: PEDF3604N-F5-01 1Electronic Components OF3604N-F5 This version: Nov. 2000 1310 nm SMT Avalanche Photo Diode Module with Single Mode Fiber GENERAL DESCRIPTION The surface mount type APD-Preamp module is a avalanche photo diode coupled to a single mode fiber with a
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PEDF3604N-F5-01
OF3604N-F5
STM16/OC48.
OF3604N-F5
PDF PIN APD DIODE DESCRIPTION
OF3603N-F5
PDEF3604N-F5-01
PEDF3604N-F5-01
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C-150
Abstract: IRF1010 IRF530S IRGB15B60KD IRGS15B60KD IRGSL15B60KD IRL3103L
Text: PD - 94383C IRGB15B60KD IRGS15B60KD IRGSL15B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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94383C
IRGB15B60KD
IRGS15B60KD
IRGSL15B60KD
O-220AB
O-220AB
AN-994.
O-220
C-150
IRF1010
IRF530S
IRGB15B60KD
IRGS15B60KD
IRGSL15B60KD
IRL3103L
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Abstract: No abstract text available
Text: PD - 94381E IRGB6B60KD IRGS6B60KD IRGSL6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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94381E
IRGB6B60KD
IRGS6B60KD
IRGSL6B60KD
O-220AB
O-262
AN-994.
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AN-994
Abstract: C-150 IRF530S IRGS10B60KD IRGSL10B60KD IRL3103L
Text: PD - 94925 IRGB10B60KDPbF IRGS10B60KD IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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IRGB10B60KDPbF
IRGS10B60KD
IRGSL10B60KD
O-220AB
O-220.
AN-994.
O-220
AN-994
C-150
IRF530S
IRGS10B60KD
IRGSL10B60KD
IRL3103L
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IRGB10B60KD
Abstract: C-150 IRF1010 IRF530S IRGS10B60KD IRGSL10B60KD IRL3103L
Text: PD - 94382C IRGB10B60KD IRGS10B60KD IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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94382C
IRGB10B60KD
IRGS10B60KD
IRGSL10B60KD
O-220AB
O-262
O-220AB
IRGB10B60KD
C-150
IRF1010
IRF530S
IRGS10B60KD
IRGSL10B60KD
IRL3103L
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C-150
Abstract: IRF530S IRGB6B60KD IRGS6B60KD IRGSL6B60KD transistor* igbt 70A 300 V
Text: PD - 94381E IRGB6B60KD IRGS6B60KD IRGSL6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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94381E
IRGB6B60KD
IRGS6B60KD
IRGSL6B60KD
O-220AB
O-262
AN-994.
C-150
IRF530S
IRGB6B60KD
IRGS6B60KD
IRGSL6B60KD
transistor* igbt 70A 300 V
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Abstract: No abstract text available
Text: PD - 94382B IRGB10B60KD IRGS10B60KD IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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94382B
IRGB10B60KD
IRGS10B60KD
IRGSL10B60KD
O-220AB
O-262
O-220AB
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diode cross reference
Abstract: schottky diode cross reference MV3110 AH513 AH761 AH512 impatt diode Gunn Diode AH370 DMK-6606
Text: CROS S R E F E R E N C E LIST MA/COM R E F . TC S REF. D E S C R IP T IO N MA40401 PACKAGED SCHOTTKY DIODE DH378 MA40402 PACKAGED SCHOTTKY DIODE DH379 MA40404 PACKAGED SCHOTTKY DIODE DH383 MA40404 PACKAGED SCHOTTKY DIODE DH384 MA40404 PACKAGED SCHOTTKY DIODE
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MA40401
MA40402
MA40404
MA40405
MA40406
MA40408
diode cross reference
schottky diode cross reference
MV3110
AH513
AH761
AH512
impatt diode
Gunn Diode
AH370
DMK-6606
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Untitled
Abstract: No abstract text available
Text: Emitter Specifications F5G1 Infrared Emitter Gallium Aluminum Arsenide Infrared Emitting Diode T he F5G1 is a Gallium-Aluminum-Arsenide, infrared emitting diode which emits non-coherent, infrared energy with a peak wavelength of 880 nanometers. This device will provide a significant increase in
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laser rise time
Abstract: lens laser diode NEC DIODE LASER nec laser diode CQF51
Text: Philips Components cqfsi _ J v_ BURIED HETEROJUNCTION InGaAsP LASER DIODE W ITH SINGLE MODE FIBRE PIGTAIL The C Q F51 is an InG aAsP buried heterojunction semiconductor laser diode. The device is designed for high-speed long distance, optical communication and data transmission.
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CQF51
laser rise time
lens laser diode
NEC DIODE LASER
nec laser diode
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