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    DIODE F4 9A Search Results

    DIODE F4 9A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE F4 9A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    STW9NB80

    Abstract: No abstract text available
    Text: STW9NB80 N-CHANNEL 800V - 0.85Ω - 9.3A TO-247 PowerMESH MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STW9NB80 800V <1Ω 9A TYPICAL RDS(on) = 0.85Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED


    Original     		STW9NB80 O-247 STW9NB80 PDF

    MOSFET 800V 3A

    Abstract: STW9NB80 AC to DC smps circuit diagram dc welding circuit diagram
    Text: STW9NB80 N-CHANNEL 800V - 0.85Ω - 9.3A TO-247 PowerMESH MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STW9NB80 800V < 1Ω 9A TYPICAL RDS(on) = 0.85Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED


    Original     		STW9NB80 O-247 MOSFET 800V 3A STW9NB80 AC to DC smps circuit diagram dc welding circuit diagram PDF

    diode PR 93A

    Abstract: isd 2100 STW9NB80
    Text: STW9NB80 N-CHANNEL 800V - 0.85Ω - 9.3A TO-247 PowerMESH MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STW9NB80 800V <1Ω 9A TYPICAL RDS(on) = 0.85Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED


    Original     		STW9NB80 O-247 diode PR 93A isd 2100 STW9NB80 PDF

    P10NK80

    Abstract: P10NK80ZFP P10NK80Z w10nk80z P10n p10nk
    Text: STP10NK80Z - STP10NK80ZFP STW10NK80Z N-CHANNEL 800V - 0.7Ω - 9A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH Power MOSFET TYPE STP10NK80Z STP10NK80ZFP STW10NK80Z • ■ ■ ■ ■ ■ VDSS R DS on ID Pw 800 V 800 V 800 V < 0.90 Ω < 0.90 Ω < 0.90 Ω


    Original     		O-220/TO-220FP/TO-247 STP10NK80Z STP10NK80ZFP STW10NK80Z O-220 O-220FP O-247 P10NK80 P10NK80ZFP P10NK80Z w10nk80z P10n p10nk PDF

    p10nk80zfp

    Abstract: P10NK80 p10nk80z w10nk80z p10nk80zfp equivalent w10nk80 mosfet P10NK80Z STW10NK80Z STP10NK80ZFP p10nk
    Text: STP10NK80Z - STP10NK80ZFP STW10NK80Z N-CHANNEL 800V - 0.78Ω - 9A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH Power MOSFET TYPE STP10NK80Z STP10NK80ZFP STW10NK80Z • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 800 V 800 V 800 V < 0.90 Ω < 0.90 Ω < 0.90 Ω


    Original     		STP10NK80Z STP10NK80ZFP STW10NK80Z O-220/TO-220FP/TO-247 STP10NK80Z O-220 O-220FP O-247 p10nk80zfp P10NK80 p10nk80z w10nk80z p10nk80zfp equivalent w10nk80 mosfet P10NK80Z STW10NK80Z STP10NK80ZFP p10nk PDF

    P10NK80

    Abstract: P10NK80ZFP w10nk80 P10NK80Z W10NK80Z p10nk80zfp equivalent N-channel MOSFET 800v to-247 mosfet P10NK80Z STW10NK80Z
    Text: STP10NK80Z - STP10NK80ZFP STW10NK80Z N-CHANNEL 800V - 0.7Ω - 9A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH Power MOSFET TYPE STP10NK80Z STP10NK80ZFP STW10NK80Z • ■ ■ ■ ■ ■ VDSS R DS on ID Pw 800 V 800 V 800 V < 0.90 Ω < 0.90 Ω < 0.90 Ω


    Original     		O-220/TO-220FP/TO-247 STP10NK80Z STP10NK80ZFP STW10NK80Z O-220 O-220FP O-247 P10NK80 P10NK80ZFP w10nk80 P10NK80Z W10NK80Z p10nk80zfp equivalent N-channel MOSFET 800v to-247 mosfet P10NK80Z STW10NK80Z PDF

    P10NK80ZFP

    Abstract: P10NK80Z w10nk80z p10nk80zfp equivalent mosfet P10NK80Z P10NK80 w10nk80 STW10NK80Z diode F4 9a SWITCHING WELDING SCHEMATIC BY MOSFET
    Text: STP10NK80Z, STP10NK80ZFP STW10NK80Z N-CHANNEL 800V - 0.80Ω - 9A TO-220/FP/TO-247 Zener-Protected SuperMESH Power MOSFET PRELIMINARY DATA TYPE STP10NK80Z STP10NK80ZFP STW10NK80Z • ■ ■ ■ ■ ■ VDSS R DS on ID Pw 800 V 800 V 800 V < 0.90 Ω < 0.90 Ω


    Original     		O-220/FP/TO-247 STP10NK80Z STP10NK80ZFP STW10NK80Z STP10NK80Z, O-220 O-220FP O-247 P10NK80ZFP P10NK80Z w10nk80z p10nk80zfp equivalent mosfet P10NK80Z P10NK80 w10nk80 STW10NK80Z diode F4 9a SWITCHING WELDING SCHEMATIC BY MOSFET PDF

    7 band audio spectrum analyzer ic

    Abstract: 2SCF2 NJU7305 NJU7505 NJU7505XD NJU7505XM audio connection diagram
    Text: NJU7505 PPRELIMINARY BAND PASS FILTER FOR AUDIO SPECTRUM ANALYZER DISPLAY • GENERAL DESCRIPTION The NJU7505 is a band pass filter for audio spectrum analyzer display. It consists of high and low band pass filters, CR oscillation circuit, control circuit and DC transfer circuit.


    Original     		NJU7505 NJU7505 NJU7505XD NJU7305 220pF 7 band audio spectrum analyzer ic 2SCF2 NJU7305 NJU7505XD NJU7505XM audio connection diagram PDF

    387DA

    Abstract: A5DA D47b 5D6 diode
    Text:  363 5 DD6 1 23 4 5 6 7 2 8 9 AB 8 C D 7E 7F 9  A 7  C  A  7 C  7   A B 7 C  C   C 8 B 3 7ABA97ACC8B 5 7A 7!AA 12F4 DF853B158DA477D65B47AD 7B88!3B 6898"D #$ D7368B%B7 B1D7538!34673B1DDA67B93!D68A


    Original     		A477D 5B47AD D7368B DA67B93! 8368B 36B72 12345678669A2BC2DC6EDFC 6D774 87DA6* DA68B 387DA A5DA D47b 5D6 diode PDF

    smd diode code F46

    Abstract: Lightsensor 19 bddf
    Text: MLX75308 Rain-/Light-Sensor IC for Automotive Features and Benefits 1 Two independent simultaneously operating Rain measurement channels 1 Integrated DC light cancellation circuitry for Rain channel DC light suppression 1 Integrated compensation for DC light induced


    Original     		MLX75308 32Bit 16Bit ISO14001 Nov/11 smd diode code F46 Lightsensor 19 bddf PDF

    schematic diagram inverter 12v to 24v 30a

    Abstract: inverter 5kva circuit diagram LB1542 2kva inverter circuit diagram dc to ac inverter schematic diagram inverter 5kva digitrip 310 time curve sim 900A ac Inverter schematics 10 kw Allen-Bradley 1336
    Text: Allen-Bradley Parallel DC Bus Supply Configurations Using Bulletin 2364E NRUs and Bulletin 2364F RGUs Bulletin 2364P User Manual Important User Information Solid-State equipment has operational characteristics differing from those of electromechanical equipment. “Safety Guidelines for the


    Original     		2364E 2364F 2364P 2364P-5 schematic diagram inverter 12v to 24v 30a inverter 5kva circuit diagram LB1542 2kva inverter circuit diagram dc to ac inverter schematic diagram inverter 5kva digitrip 310 time curve sim 900A ac Inverter schematics 10 kw Allen-Bradley 1336 PDF

    NEC Tokin oe 907

    Abstract: inverter nec tokin Tablet PC R116 schematic MITSUBISHI E100 nec tokin oe 128 CN702 CPD0307024C1 DFHM9007ZA motorola transistor R711 toshiba l850
    Text: ORDER NO. CPD0307024C1 Notebook Computer CF-18 This is the Service Manual for the following areas. M …for U.S.A. and Canada Model No. CF-18BHKZXDM 2-1 2-2 2-3 CONTENTS 1 Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4


    Original     		CPD0307024C1 CF-18 CF-18BHKZXDM BLM21P600SG CF-18 SW955 EVQPLDA15 SW954 NEC Tokin oe 907 inverter nec tokin Tablet PC R116 schematic MITSUBISHI E100 nec tokin oe 128 CN702 CPD0307024C1 DFHM9007ZA motorola transistor R711 toshiba l850 PDF

    STW20NC50

    Abstract: No abstract text available
    Text: STW20NC50 N-CHANNEL 500V - 0.22Ω - 18.4A TO-247 PowerMesh II MOSFET TYPE STW20NC50 • ■ ■ ■ ■ VDSS RDS on ID 500V < 0.27Ω 18.4A TYPICAL RDS(on) = 0.22Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED


    Original     		STW20NC50 O-247 STW20NC50 PDF

    STW20NC50

    Abstract: No abstract text available
    Text: STW20NC50 N-CHANNEL 500V - 0.22Ω - 18.4A TO-247 PowerMesh II MOSFET TYPE STW20NC50 • ■ ■ ■ ■ VDSS RDS on ID 500V < 0.27Ω 18.4A TYPICAL RDS(on) = 0.22Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED


    Original     		STW20NC50 O-247 STW20NC50 PDF

    STW20NC50

    Abstract: No abstract text available
    Text: STW20NC50 N-CHANNEL 500V - 0.22Ω - 18.4A TO-247 PowerMesh II MOSFET TYPE STW20NC50 • ■ ■ ■ ■ VDSS RDS on ID 500V < 0.27Ω 18.4A TYPICAL RDS(on) = 0.22Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED


    Original     		STW20NC50 O-247 STW20NC50 PDF

    irfp460

    Abstract: IRFP460 application datasheet irfp460 mosfet irfp460 dc welding circuit diagram irfp460 mosfet AC to DC smps circuit diagram dc welding circuit diagram irfp460 30v dc-ac converter with irfp460
    Text: IRFP460 N-CHANNEL 500V - 0.22Ω - 18.4A TO-247 PowerMesh II MOSFET TYPE IRFP460 • ■ ■ ■ ■ VDSS RDS on ID 500V < 0.27Ω 18.4A TYPICAL RDS(on) = 0.22Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED


    Original     		IRFP460 O-247 irfp460 IRFP460 application datasheet irfp460 mosfet irfp460 dc welding circuit diagram irfp460 mosfet AC to DC smps circuit diagram dc welding circuit diagram irfp460 30v dc-ac converter with irfp460 PDF

    relay 4098

    Abstract: CI 4026 4026 block diagram for digital clock cs 2648 A55 DIODE IDT8216X1 RELAY 4088 ci 4093 ci cd 4058 40.21 relay
    Text: Application Note AN-408 LINECARD SOLUTIONS WITH THE IDT8216X1 AND IDT821054A IDT ADVANTAGE • • • • • • • Two-Wire impedance set by single external impedance Programmable constant-current feed Programmable loop-detect threshold and ring-trip detect


    Original     		AN-408 IDT8216X1 IDT821054A 6429drw22 relay 4098 CI 4026 4026 block diagram for digital clock cs 2648 A55 DIODE RELAY 4088 ci 4093 ci cd 4058 40.21 relay PDF

    diode C522

    Abstract: A02N-5
    Text: 123455657 Enhanced LIN Transceiver 89ABCD9E7 1 RxD 1 EN 2 WAKE 3 TxD 4 Rev.2.x and SAE J2602 1 Baud rate up to 20 kBaud 1 Wide operating voltage range VS = 5 to 27 V 1 Very low standby current consumption of 10µA in sleep mode MLX 80020 1 Bus and local wake up capable with source recognition


    Original     		89ABCD9E7 J2602 MLX80020 ISO14001 diode C522 A02N-5 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiC SCHOTTKY DIODE SML02SC06D2A/SML02SC06D2B • • • • • • • Low Leakage Fast Switching Low Forward Voltage Hermetic Ceramic Surface Mount Package Suitable for general purpose, switching applications. Space Level and High-Reliability Screening Options Available


    Original     		SML02SC06D2A/SML02SC06D2B SML02SC06D2A-JQRS PDF

    id 0835

    Abstract: STW8NB90 STH8NB90FI
    Text: STW8NB90 STH8NB90FI N-CHANNEL 900V - 1.1 Ω - 8 A TO-247/ISOWATT218 PowerMesh MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STW8NB90 900 V < 1.45 Ω 8A STH8NB90FI 900 V < 1.45 Ω 5A TYPICAL RDS(on) = 1.1 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED


    Original     		STW8NB90 STH8NB90FI O-247/ISOWATT218 id 0835 STW8NB90 STH8NB90FI PDF

    n-channel 900v 9a

    Abstract: STW8NB90 STH8NB90FI
    Text: STW8NB90 STH8NB90FI N-CHANNEL 900V - 1.1 Ω - 8 A TO-247/ISOWATT218 PowerMesh MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STW8NB90 900 V < 1.45 Ω 8A STH8NB90FI 900 V < 1.45 Ω 5A TYPICAL RDS(on) = 1.1 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED


    Original     		STW8NB90 STH8NB90FI O-247/ISOWATT218 n-channel 900v 9a STW8NB90 STH8NB90FI PDF

    Untitled

    Abstract: No abstract text available
    Text: SiC SCHOTTKY DIODE SML01SC06D2A/SML01SC06D2B • • • • • • • Low Leakage Fast Switching Low Forward Voltage Hermetic Ceramic Surface Mount Package Suitable for general purpose, switching applications. Space Level and High-Reliability Screening Options Available


    Original     		SML01SC06D2A/SML01SC06D2B SML01SC06D2A-JQRS PDF

    SP571

    Abstract: diode sg 71 diode sg 47 sgsp571 sp 571 diode sg 55 diode c142 SG-47 diode C144 e s j P472
    Text: S G S-THOMSON 07E 1> j TTETEB? OOlT'iai 4 ï 73C 17418 J}_ 7 Z 3 J - / 3 SGSP47Í/P472¿| |SGSP571/F572| l\l-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Pow er-M os field


    OCR Scan     		SGSP47 /P472¿ SGSP571/F572| SP472 SP572 OT-93 SP471 SP571 T471/P472 SGSP57I/P572 diode sg 71 diode sg 47 sgsp571 sp 571 diode sg 55 diode c142 SG-47 diode C144 e s j P472 PDF

    N CH FET 600V 9A

    Abstract: 2SK2082-01
    Text: SPECIFICATION DEVICE NAME : TYPE NAME : Power MOSFET 2 S K 2 0 8 2 - 0 1 SPEC. No. F u j i E l e c t r i c Co., Ltd. This Specification is subject to change without notice. date NAME APPROVEO Fuji Electric CaJLid. DRAWN CHECKED 1 1 Y 0257-R-004a 1 . Scope


    OCR Scan     		2SK2082-0 0257-R-004a 80//s 0257-R-003a 025T-R-003a N CH FET 600V 9A 2SK2082-01 PDF