hp11612a
Abstract: anzac power divider HP8565A HP83595A HP8565 HP436A HP8640B Microwave PIN diode pin diode microstrip 0805Z473
Text: A Low Distortion PIN Diode Switch Using Surface Mount Devices Application Note 1049 Abstract One of the practical applications of the surface mount‑ ed PIN diode is in the design of low current, low cost RF switches. In the design of such circuits, the diode is gen‑
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5091-4932E
5966-0780E
order50
hp11612a
anzac power divider
HP8565A
HP83595A
HP8565
HP436A
HP8640B
Microwave PIN diode
pin diode microstrip
0805Z473
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LN189S
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN189S GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 5.0±0.3 6.0±0.3 3.4±0.2 3.0±0.2 4.0± 0.15 1.0 0.6 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo
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LN189S
LN189S
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LN189L
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN189L GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 5.0±0.3 6.0±0.3 3.4±0.2 3.0±0.2 4.0±0.15 1.0 0.6 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol
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LN189L
LN189L
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ED 05 Diode
Abstract: ED 03 Diode
Text: MITSUBISHI FAST RECOVERY DIODE MODULES RM25HG-24S HIGH SPEED SWITCHING USE NON-INSULATED TYPE ed RM25HG-24S DC current . 25A Repetitive peak reverse voltage . 1200V • trr Reverse recovery time . 0.3µs
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RM25HG-24S
20MIN.
ED 05 Diode
ED 03 Diode
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ED 05 Diode
Abstract: ED 03 Diode
Text: MITSUBISHI FAST RECOVERY DIODE MODULES RM50HG-12S HIGH SPEED SWITCHING USE NON-INSULATED TYPE ed RM50HG-12S DC current . 50A Repetitive peak reverse voltage . 600V • trr Reverse recovery time . 0.2µs
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RM50HG-12S
20MIN.
ED 05 Diode
ED 03 Diode
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fire detector
Abstract: 100HZ 1U20 47PF GL1F201 IS1U20
Text: PREPARED BY: I DATE: SPEC No. ,-. ED-95093 ,. OPTO-ELEtiC @”C DEVICES DW.”. SPECIFICATION / \ DEVICE SPECIFICATION FOR INFRARED EMITTING DIODE MODEL No. GL1F201 \ 1. These specification sheets include the contents under the copyright of Sharp Corporation “Sharp”).
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ED-95093
GL1F201
fire detector
100HZ
1U20
47PF
GL1F201
IS1U20
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X9522
Abstract: X9522V20I-A X9522V20I-B X9522V20IZ-A X9522V20IZ-B
Text: I GNS DE S W E T OR N DUC ED F TE PRO 9520 D N TITU 2329, X MME ECO E SUBS ISData L2 Sheet R T 26, NO I BL 3 S 2 S 2 PO SL 20, I X958 X9522 Laser Diode Control for Fiber Optic Modules January 3, 2006 FN8208.1 DESCRIPTION Triple DCP, Dual Voltage Monitors
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X9520
L22329
X9522
FN8208
X9522
X9522V20I-A
X9522V20I-B
X9522V20IZ-A
X9522V20IZ-B
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LN66
Abstract: LN66L
Text: Infrared Light Emitting Diodes LN66L LN66(L GaAs Infrared Light Emitting Diode Unit : mm M Di ain sc te on na tin nc ue e/ d 1.0 7.65±0.2 For optical control systems Not soldered 2.25 ø5.0±0.2 Features ue pl d in an c se ed lud pl vi an m m es si tf
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LN66L
LN66
LN66L
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGP11 N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M G P 1 1 N 6 0 ED Insulated G ate Bipolar Transistor w ith A n ti-P arallel Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T 0-2 20 11 A @ 90°C
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MGP11
N60ED/D
MGP11N60ED/D
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Untitled
Abstract: No abstract text available
Text: Transmissive Optoswitch VTL23G2B, 23G3B Slotted Switch - Schmitt Output PRODUCT DESCRIPTION This series of interrupter type transm issive optoswitches com bines an infrared emitting diode IR ED with a TTL compatible, Schmitt output, photo 1C detector in an opaque plastic case with
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VTL23G2B,
23G3B
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CLM185T2
Abstract: CLM285T2 CLM285Y2 CLM385N2 CLM385T2 CLM385Y2 120PV
Text: Micropower Voltage Reference Diode C Q IO Q IC CO RPO RATIO N v CLM185-2.5 / CLM285-2.5/ CLM385-2.5 FEATURES ORDERING INFORMATION • Operating C u rre n t. 20 |M - 20mA • Dynamic Im p ed an ce . 1Q
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CLM185-2
CLM285-2
CLM385-2
CLM185
20yiA
CLM185T2
CLM285T2
CLM285d.
4432E
CLM285Y2
CLM385N2
CLM385T2
CLM385Y2
120PV
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hb5-132
Abstract: S370 S370 UDT
Text: VISIB LE LIG HT PRODUCTS Light Emitting Diode REV:B DATE:2005/4/26 iDEVICE NO:HB5-132 (H i-R ed ) iLE N S COLOR: V colored diffusion white diffusion colored transparent water clear iPACKAGE DIMENSIONS: NOTE: 1 .All dimensions are In millimeter. 2 .Lead spacing In measured where the
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HB5-132
hb5-132
S370
S370 UDT
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6bv8
Abstract: diode 12-55 c capacitor RGF general electric RK 1900
Text: 6BV8 ET-T981 Page 1 6BV8 TUBES 12-55 DUPLEX-DIODE TRIODE DESCRIPTION AND RATING T h e 6 B V 8 is a m iniature duplex-diode m ed ium -m u triode in w hich separate cathode an d plate connections are provided for each diode section. T h e tube is intended p rim a rily for service as a com bined syn ch ron ou s detector and
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ET-T981
600-milliampere
6bv8
diode 12-55 c
capacitor RGF
general electric
RK 1900
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PS2002B
Abstract: PS2002 transistor replacement 0z99
Text: NEC PHOTO COUPLER BfCTRON OEVICE PS2002B PHOTO CO U PLER IN D U ST R IA L U SE -N EP O C SERIES - DESCRIPTION The PS2002B is an optically coupled isolator containing a GaAsP light emitting diode and an NPN silicon darlington- connect ed phototransistor.
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PS2002B
PS2002B
-L50-
2500VDC
100ft
100il
Ul/10
PS2002
transistor replacement
0z99
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Untitled
Abstract: No abstract text available
Text: AIGaAs INFRARED EMITTING DIODE OPTOELECTRONICS QED121/122/123 DESCRIPTION PACKAGE DIMENSIONS T h e Q ED 12X is an 880 AIGaAs LED encapsulated in a clear, peach tinted, plastic T-1% package. FEATURES • Tight production E- distribution. ■ Steel lead fram es for im proved reliability in solder
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QED121/122/123
ST2132
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Untitled
Abstract: No abstract text available
Text: eVERJLIGHT EVERLIGHT ELECTRONICS CO.,LTD. Technical Data Sheet Light Emitting Diode 5 m m R ound L ED ,T -1 3/4 7343-2UBGC/MB Features • Popular T -l 3/4 diameter package. • Choice o f various viewing angles. • Available on tape and reel. • Reliable and robust.
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7343-2UBGC/MB
B91010370
R19103039
DLE-734-018
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Untitled
Abstract: No abstract text available
Text: eVERJLIGHT EVERLIGHT ELECTRONICS CO.,LTD. Technical Data Sheet Light Emitting Diode 5 m m R ound L ED ,T -1 3/4 7343-2SURC/S406 Features • Popular T-l 3/4 diameter package. • Choice of various viewing angles. • Available on tape and reel. • Reliable and robust.
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7343-2SURC/S406
B91010216
R19102030
DLE-734-016
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rover
Abstract: J1000
Text: SPEb^fo. / ED-Q2Û78 , x . ISSUE Maiçh;i8,20Q2 SHARP OPTOELECTRONIC DEVICES DIVISION ELECTRONIC COMPONENTS GROUP SHARP CORPORATION SPECIFICATION DEVICE SPECIFICATION FOR INFRARED EMITTING DIODE MODEL No. G L 100M N 0M P1M Specified for Enclosed please find copies of the Specifications which consists of 14 pages including cover.
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ED-Q2078
GL100MN0MP1M
GL100MN0MP1M
rover
J1000
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Untitled
Abstract: No abstract text available
Text: eVERJLIGHT EVERLIGHT ELECTRONICS CO.,LTD. Technical Data Sheet Light Emitting Diode 5 m m R ound L ED ,T -1 3/4 7343-2UBGC/C505 Features • Popular T-l 3/4 diameter package. • Choice of various viewing angles. • Available on tape and reel. • Reliable and robust.
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7343-2UBGC/C505
DLE-734-015
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ip olivetti cd
Abstract: GL100MD1MP1 GL100MD1
Text: SPEC. No. ED-02157 ISSUE June 21,2002 SH A R P OPTO-ELECTRONIC DEVICES DIVISION ELECTRONIC COMPONENTS GROUP SHARP CORPORATION SPECIFICATION i " DEVICE SPECIFICATION FOR INFRARED EMITTING DIODE MODEL No. Specified for GL100MD1MP1 Olivetti Enclosed please find copies o f the Specifications which consists o f 14 pages including cover.
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ED-02157
GL100MD1MP1
ip olivetti cd
GL100MD1
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2SC1254
Abstract: JIS C7021 B-11 led Concave RS510
Text: LED Structure, Characteristics and Operation | CHARACTERISTICS I LED BASIC STRUCTURE T h e LED Light E m itting Diode chip h as an internal P-N junction, and an electrode is provided on each surface of the chip to m ake ohm ic contact. T he P-N junction is form ed by
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C7021
90-degree
JIS-C7021
2SC1254
JIS C7021 B-11
led Concave
RS510
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IS44
Abstract: No abstract text available
Text: PRODUCT INFORMATION 13Ô0rtm 1550»,* 8C443 Datacom, Telecom RN/Preamp This device consists of a PIN photo diode and a transimpedance amplifier assembled in a TO-46 package. It is design ed for FD D I, ATM and SD H /Sonet up to 155 Mbps. The AGC A utom atic Gain Control
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8C443
IS44
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LG direct drive motor
Abstract: 600v 20 amp mosfet transistor tl 11C mosfet
Text: m jg m J T f 50 AMP, 600 VOLT IGBT PLUS DIODE HALF BRIDGE POWER HYBRID 4f\* a 4 1 U 1 M.S. K EN N ED Y CORP. 315 699-9201 0170 Thompson Road •Cicero, N.Y. 13039 FEATURES: 600V, 50 Amp Capability Ultra Low Thermal Resistance - Junction to Case - 0.21 °C/W
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4101B
MII-H-38534
LG direct drive motor
600v 20 amp mosfet
transistor tl
11C mosfet
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stetron
Abstract: No abstract text available
Text: V A R IS TO R ^^v , , .' , '’ -V y * ; $ h \ } T •'•'•. ' ■ ■ ?‘- - * ■ . . ■ % Diffused Junction Silicon Types and Sili.çon Carbide Types D IFFU S ED J U N C T IO N S ILIC O N VA R IS TO R S STETRON diffused junction Silicon varistors are special diode
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VT60D\SICVAR
SDL-080-131
SDL-098-231
100mA:
stetron
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