SiA419DJ
Abstract: S09-1397-Rev
Text: SiA419DJ Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.030 at VGS = - 4.5 V - 12a 0.039 at VGS = - 2.5 V - 12a 0.051 at VGS = - 1.8 V - 12a 0.066 at VGS = - 1.5 V - 12 a 0.113 at VGS = - 1.2 V - 10.6
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SiA419DJ
SC-70
2002/95/EC
SC-70-6L-Single
18-Jul-08
S09-1397-Rev
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74620
Abstract: SiA419DJ SiA419DJ-T1-GE3
Text: New Product SiA419DJ Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.030 at VGS = - 4.5 V - 12a 0.039 at VGS = - 2.5 V - 12a 0.051 at VGS = - 1.8 V - 12 a 0.066 at VGS = - 1.5 V - 12a 0.113 at VGS = - 1.2 V
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SiA419DJ
SC-70
SC-70-6L-Single
18-Jul-08
74620
SiA419DJ-T1-GE3
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SiA419DJ
Abstract: SiA419DJ-T1-GE3
Text: New Product SiA419DJ Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.030 at VGS = - 4.5 V - 12a 0.039 at VGS = - 2.5 V - 12a 0.051 at VGS = - 1.8 V - 12 a 0.066 at VGS = - 1.5 V - 12a 0.113 at VGS = - 1.2 V
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SiA419DJ
SC-70
SC-70-6L-Single
08-Apr-05
SiA419DJ-T1-GE3
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Untitled
Abstract: No abstract text available
Text: SiA419DJ Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.030 at VGS = - 4.5 V - 12a 0.039 at VGS = - 2.5 V - 12a 0.051 at VGS = - 1.8 V - 12a 0.066 at VGS = - 1.5 V - 12 a 0.113 at VGS = - 1.2 V - 10.6
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SiA419DJ
SC-70
2002/95/EC
SC-70-6L-Single
18-Jul-08
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Si5481DU
Abstract: Si5481DU-T1-GE3 marking code bc
Text: New Product Si5481DU Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.022 at VGS = - 4.5 V - 12a 0.029 at VGS = - 2.5 V - 12a 0.041 at VGS = - 1.8 V - 12a • Halogen-free • TrenchFET Power MOSFET
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Si5481DU
18-Jul-08
Si5481DU-T1-GE3
marking code bc
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Untitled
Abstract: No abstract text available
Text: New Product SiA419DJ Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.030 at VGS = - 4.5 V - 12a 0.039 at VGS = - 2.5 V - 12a 0.051 at VGS = - 1.8 V - 12 a 0.066 at VGS = - 1.5 V - 12a 0.113 at VGS = - 1.2 V
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SiA419DJ
SC-70-6L-Single
SiA419DJ-T1-E3
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: AP6680AGM RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low On-Resistance D BVDSS 30V RDS ON Simple Drive Requirement Fast Switching Characteristic 11m ID G 12A S D Description D D Advanced Power MOSFETs from APEC provide the
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AP6680AGM
6680AGM
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U405D
Abstract: STU405D 2525l
Text: S T U405D S amHop Microelectronics C orp. Nov,24 2005 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 40V 16A R DS (ON) ( m W ) P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -40V -12A R DS (ON) ( m W )
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U405D
O-252-5L
O-252-5L
U405D
STU405D
2525l
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stu404d
Abstract: U404D TU404D
Text: S T U404D S amHop Microelectronics C orp. Oct, 03 2005 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) R DS (ON) ( m W ) V DS S ID 40V 16A P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -40V -12A R DS (ON) ( m W )
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U404D
O-252-4L
O-252-4L
stu404d
U404D
TU404D
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Untitled
Abstract: No abstract text available
Text: S T U404D S amHop Microelectronics C orp. S ep 14 2006 ver1.1 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) R DS (ON) ( m W ) V DS S ID 40V 16A P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -40V -12A
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U404D
O-252-4L
O-252-4L
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stu407D
Abstract: STU407DH STU407 407DH STU-407DH 407D U407DH TO-252-4L
Text: S T U407DH S amHop Microelectronics C orp. Apr 20 2007 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) R DS (ON) ( m Ω ) V DS S ID 40V 16A P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -40V -12A R DS (ON) ( m Ω )
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U407DH
O-252-4L
O-252-4L
stu407D
STU407DH
STU407
407DH
STU-407DH
407D
U407DH
TO-252-4L
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STU404D
Abstract: U404D Stu404
Text: STU404D Green Product SamHop Microelectronics Corp. Sep 14 2006 ver1.1 Dual Enhancement Mode Field Effect Transistor N and P Channel (N-Channel) PRODUCT SUMMARY RDS(ON) ( m Ω ) VDSS ID 40V 16A (P-Channel) PRODUCT SUMMARY Max VDSS ID -40V -12A RDS(ON) ( m Ω )
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STU404D
O-252-4L
U404D
O-252-4L
STU404D
U404D
Stu404
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6680agm
Abstract: AP6680AGM ap6680A 6680ag 6680A APEC
Text: AP6680AGM RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-Resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic BVDSS 30V RDS ON 11mΩ ID G 12A S D Description D D Advanced Power MOSFETs from APEC provide the
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AP6680AGM
6680AGM
6680agm
AP6680AGM
ap6680A
6680ag
6680A
APEC
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350v mosfet nchannel
Abstract: FDP12N35 FDPF12N35
Text: UniFET TM FDP12N35 / FDPF12N35 350V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 12A, 350V, RDS on = 0.38Ω @VGS = 10 V
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FDP12N35
FDPF12N35
O-220
FDPF12N35
350v mosfet nchannel
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SI5481DU
Abstract: No abstract text available
Text: New Product Si5481DU Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.022 at VGS = - 4.5 V - 12a 0.029 at VGS = - 2.5 V - 12a 0.041 at VGS = - 1.8 V - 12a • Halogen-free • TrenchFET Power MOSFET
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Si5481DU
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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SI5481DU
Abstract: No abstract text available
Text: New Product Si5481DU Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.022 at VGS = - 4.5 V - 12a 0.029 at VGS = - 2.5 V - 12a 0.041 at VGS = - 1.8 V - 12a • Halogen-free • TrenchFET Power MOSFET
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Si5481DU
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product Si5481DU Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.022 at VGS = - 4.5 V - 12a 0.029 at VGS = - 2.5 V - 12a 0.041 at VGS = - 1.8 V - 12a • Halogen-free • TrenchFET Power MOSFET
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Si5481DU
Si5481DU-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: New Product Si5481DU Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.022 at VGS = - 4.5 V - 12a 0.029 at VGS = - 2.5 V - 12a 0.041 at VGS = - 1.8 V - 12a • Halogen-free • TrenchFET Power MOSFET
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Si5481DU
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product Si5481DU Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.022 at VGS = - 4.5 V - 12a 0.029 at VGS = - 2.5 V - 12a 0.041 at VGS = - 1.8 V - 12a • Halogen-free • TrenchFET Power MOSFET
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Si5481DU
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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76407p
Abstract: No abstract text available
Text: HUF76407P3 în t e is il D a ta S h e e t O c to b e r 1999 F ile N u m b e r 4706.3 12A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power M OSFET Packaging Features JEDEC TQ-220AB • Ultra Low O n-Resistance ' SO URCE DRAIN GATE rDS ON = 0 .0 9 2 ft, VGS = 10V
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HUF76407P3
TQ-220AB
O-22QAB
76407P
AN7254
AN7260.
76407p
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ELM32405LA-S
Abstract: SS510
Text: Single P-channel MOSFET ELM 32405LA-S • General description B F e a tu re s ELM32405LA-S uses advanced trench technology to provide excellentRds on , low gate charge and low gate resistance. • Vds=-30V • Id=-12A • Rds(on) < 45mQ (Vgs=-10V) • Rds(on) < 75mQ (Vgs=-4.5V)
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ELM32405LA-S
ELM32405LA-S
SS510
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET F L 1 0 K M -1 2 A HIGH-SPEED SWITCHING USE FL10KM -12A OUTLINE DRAWING Dimensions in mm 10 ± 0 .3 2.8 ± 0 .2 • 10V DRIVE • V d s s . 600V
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FL10KM
O-220FN
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F12N10L
Abstract: f12N08L f12n08 f12n10 RFM12N08L RFP12N10L RFM10N12L RFM10N15L RFM12N10L RFP10N12L
Text: h a r r R F M 1 0 N 1 2 L /1 5 L R F P 1 0 N 1 2 L /1 5 L i s N-Channel Logic Level Power Field-Effect Transistors L2FET August 1991 Package Features TO-204AA BOTTOM VIEW • 10A, 120V and 150V • fDS(ON) = O-3« □RAIN (FLANGE) SOURCE • Design Optimized for 5V Gate Drives
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RFM10N12L/15L
RFP10N12L/15L
RFM10N12L
RFM10N15L
RFP10N12L
RFP10N15L
RFM12N08L,
RFM12N10L,
RFP12N08L,
RFP12N10L
F12N10L
f12N08L
f12n08
f12n10
RFM12N08L
RFM12N10L
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FL10KM-12A
Abstract: No abstract text available
Text: MITSUBISHI Nch POWER MOSFET FL10KM-12A •§;> >>•+. :W> ^ »ft fin*' slljü \e cl 1 *p- "TVi'S's JJÎ, \\ttVrts &T s°^ HIGH-SPEED SWITCHING USE FL10KM-12A OUTLINE DRAWING Dimensions in mm 10 ± 0.3 • 1 0 V D R IV E • V d s s .6 0 0 V
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FL10KM-12A
O-22QFN
57KH23
571Q123
FL10KM-12A
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