DF600R12IP4D
Abstract: diode 9-f 1N6760
Text: Technische Information / technical information DF600R12IP4D IGBT-Module IGBT-modules PrimePACK 2 Modul mit Trench/Feldstopp IGBT4, größerer Emitter Controlled 4 Diode PrimePACK™2 module with Trench/Fieldstop IGBT4, increased Emitter Controlled 4 diode
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DF600R12IP4D
DF600R12IP4D
diode 9-f
1N6760
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Untitled
Abstract: No abstract text available
Text: SEPTEMBER 1995 DF685 DS4303-1.2 DF685 FAST RECOVERY DIODE APPLICATIONS KEY PARAMETERS VRRM 4500V IF AV 445A IFSM 4500A Qr 650µC trr 5µs • Snubber Diode For GTO Applications. FEATURES ■ Double Side Cooling. ■ High Surge Capability. ■ Low Recovery Charge.
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DF685
DS4303-1
DF685
M779b.
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DF451
Abstract: DF685
Text: DF685 DF685 Fast Recovery Diode Replaces January 2000 version, issue DS4303-2.0 DS4303-3.0 June 2004 APPLICATIONS KEY PARAMETERS VRRM 4500V IF AV 445A IFSM 4500A Qr 650µC trr 5µs • Snubber Diode For GTO Applications FEATURES ■ Double Side Cooling ■ High Surge Capability
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DF685
DS4303-2
DS4303-3
DF685
DF451
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GTO thyristor 4500V 4000A
Abstract: DS4303-1 AN4506 AN4839 AN4853 DF685
Text: DF685 DF685 Fast Recovery Diode Replaces March 1998 version, DS4303-1.3 DS4303-2.0 January 2000 KEY PARAMETERS VRRM 4500V IF AV 445A IFSM 4500A Qr 650µC trr 5µs APPLICATIONS • Snubber Diode For GTO Applications FEATURES ■ Double Side Cooling ■ High Surge Capability
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DF685
DS4303-1
DS4303-2
DF685
GTO thyristor 4500V 4000A
AN4506
AN4839
AN4853
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DF685
Abstract: DS4303-1
Text: DF685 DF685 Fast Recovery Diode Replaces March 1998 version, DS4303-1.3 DS4303-2.0 January 2000 APPLICATIONS KEY PARAMETERS VRRM 4500V IF AV 445A IFSM 4500A Qr 650µC trr 5µs • Snubber Diode For GTO Applications FEATURES ■ Double Side Cooling ■ High Surge Capability
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DF685
DS4303-1
DS4303-2
DF685
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DF60AA120
Abstract: DF60AA160 DF60AA
Text: DIODE THREE PHASES BRIDGE TYPE DF60AA120/160 UL;E76102 （M） Power Diode Module DF60AA is designed for three phase full wave rectification, which has six diodes connected in a three phase bridge configuration. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink
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DF60AA120/160
E76102
DF60AA
60Amp
DF60AA120
DF60AA160
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tc112
Abstract: DF60AA120 DF60AA DF60AA160
Text: DIODE THREE PHASES BRIDGE TYPE DF60AA120/160 UL;E76102 （M） Power Diode Module DF60AA is designed for three phase full wave rectification, which has six diodes connected in a three phase bridge configuration. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink
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DF60AA120/160
E76102
DF60AA
60Amp
tc112
DF60AA120
DF60AA160
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DF60BA40
Abstract: DF60BA80 "Power Diode" bridge diode 60a
Text: DIODE THREE PHASES BRIDGE TYPE DF60BA40/80 UL;E76102 M Power Diode Module DF60BA is designed for three phase full wave rectification, which has six diodes connected in a three phase bridge configuration. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink
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DF60BA40/80
E76102
DF60BA
60Amp
DF60BA40
DF60BA80
50/60HZ,
DF60BA40
DF60BA80
"Power Diode"
bridge diode 60a
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Untitled
Abstract: No abstract text available
Text: DIODE THREE PHASES BRIDGE TYPE DF60AA120/160 UL;E76102 M Power Diode Module DF60AA is designed for three phase full wave rectification, which has six diodes connected in a three phase bridge configuration. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink
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DF60AA120/160
E76102
DF60AA
60Amp
DF60AA120
DF60AA160
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"Power Diode"
Abstract: df60aa160 DF60AA120 TC 112 bridge diode 60a df60aa M6 transistor
Text: DIODE THREE PHASES BRIDGE TYPE DF60AA120/160 UL;E76102 M Power Diode Module DF60AA is designed for three phase full wave rectification, which has six diodes connected in a three phase bridge configuration. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink
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DF60AA120/160
E76102
DF60AA
60Amp
DF60AA120
DF60AA160
50/60HZ,
"Power Diode"
df60aa160
DF60AA120
TC 112
bridge diode 60a
M6 transistor
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DF60BA40
Abstract: DF60BA80
Text: DIODE THREE PHASES BRIDGE TYPE DF60BA40/80 UL;E76102 （M） Power Diode Module DF60BA is designed for three phase full wave rectification, which has six diodes connected in a three phase bridge configuration. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink
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DF60BA40/80
E76102
DF60BA
60Amp
DF60BA40
DF60BA80
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Untitled
Abstract: No abstract text available
Text: DIODE THREE PHASES BRIDGE TYPE DF60BA40/80 UL;E76102 M Power Diode Module DF60BA is designed for three phase full wave rectification, which has six diodes connected in a three phase bridge configuration. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink
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DF60BA40/80
E76102
DF60BA
60Amp
DF60BA40
DF60BA80
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DF60BA80
Abstract: DF60BA40
Text: DIODE THREE PHASES BRIDGE TYPE DF60BA40/80 UL;E76102 （M） Power Diode Module DF60BA is designed for three phase full wave rectification, which has six diodes connected in a three phase bridge configuration. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink
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DF60BA40/80
E76102
DF60BA
60Amp
DF60BA80
DF60BA40
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Untitled
Abstract: No abstract text available
Text: ATTENUATORS, PIN DIODE SERIES DF & FF “PHASE-FREE” 0.25–18 GHz GENERAL INFORMATION: KDI/Triangle’s phase free Pin diode attenuators change the amplitude of a microwave signal with matched low VSWR over the full attenuation range, and with minimum phase shift change. The units are supplied with
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FF-18
DF-18
FF-45
DF-45
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Untitled
Abstract: No abstract text available
Text: M ITEL DF685 Fast Recovery Diode SEMICONDUCTOR Supersedes Septem ber 1995 version, DS4303 - 1.2 DS4303 - 1.3 March 1998 APPLICATIONS • KEY PARAMETERS 4500V 445A Jf AV 4500A FSM 650|lC Q, VRRM S nubber Diode For GTO Applications. 5(iS FEATURES ■ Double Side C ooling.
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DS4303
DF685
DF685
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Untitled
Abstract: No abstract text available
Text: S i GEC P L E S S E Y SEPTEMBER 1995 SEMICONDUC TOR S DS4303-1.2 DF685 FAST RECOVERY DIODE KEY PARAMETERS 4500V 445A Jf AV 4500A FSM 650(lC Or APPLICATIONS vRRM • Snubber Diode For GTO Applications. 5|iS FEATURES ■ Double Side Cooling. ■ High Surge Capability.
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DS4303-1
DF685
DF685
M779b.
37bflS22
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Untitled
Abstract: No abstract text available
Text: DIODE THREE PHASES BRIDGE TYPE DF60AA Power Diode Module D F 60 A A is designed for three phase full wave rectification, which has six diodes connected in a three phase bridge configuration. The mounting base of the module is electri cally isolated from semiconductor elements for simple heatsink
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DF60AA
60Amp
DF60AA120
DF60AA160
B-145
D0Q23D3
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Untitled
Abstract: No abstract text available
Text: @ M ITEL DF685 Fast Recovery Diode S E M IC O N D U C T O R Supersedes Septem ber 1995 version, DS4303 - 1.2 DS4303 - 1.3 March 1998 APPLICATIONS KEY PARAMETERS • Snubber Diode For GTO Applications. ^rrm 4500V ^f av 445A 'fsm 4500A Qr 650(iC trr 5^is FEATURES
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DS4303
DF685
DF685
M779b.
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Untitled
Abstract: No abstract text available
Text: SANSHA ELECTRIC MFG CO 37E D H 7 ^ 1 2 4 3 QQDDD77 5 H S E M J ;. ~Q DIODE MODULE SanRex Power Diode Module D F60B A is designed for three phase full wave rectification, which has six diodes connected in a three phase bridge configuration. The mounting base of the module is electrically isolated from semiconductor
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QQDDD77
60Amp
DF60BA40
DF60BA60
00D0076
DF60BA
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IT 8572
Abstract: DF-45
Text: ATTENUATORS, PIN DIODE SER IES DF & FF “PHASE-FREE” 0.25-18 GHz GENERAL INFORMATION: KDI/Triangle’s phase free Pin diode attenuators change the am plitude of a microwave signal with m atched low V SW R over the full attenuation range, and with m inim um phase shift change. The units are supplied with
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FF-18
DF-18
FF-45
DF-45
DF-45
IT 8572
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Untitled
Abstract: No abstract text available
Text: ATTENUATORS, PIN DIODE S E R IE S DF & FF “PHASE-FREE’ 0.25-18 GHz GENERAL INFORMATION: KDIATriangle’s phase free Pin diode attenuators change the am plitude of a microwave signal with m atched low VSW R over the full attenuation range, and w ith minim um phase shift change. The units are supplied with
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FF-18
DF-18
FF-45
DF-45
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DD100HB160
Abstract: 1S43 DF30CA DF60A df30aa
Text: S A NS HA ELECTRIC MF 6 CO T> 37E 7 cm S 4 3 ÖOOOOOb 1 E lT s E M J DIODE . T'Z3-0? ISOLATED TYPE 3 PHASE DIODE MODULE TYPE DF20AA DF20BA DF20CA DF20DB DF30AA DF30BA DF30CA DF30DB DF40AA V A *C 1200-1600 400— 800 800— 1600 400—800 1200-1600 400—800
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DF20AA
DF20BA
DF20CA
DF20DB
DF30AA
DF30BA
DF30CA
DF30DB
DG20AA
SDF2000B
DD100HB160
1S43
DF60A
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Untitled
Abstract: No abstract text available
Text: SANSHA ELECTRIC MFG CO J> 37E 7^=11243 0000075 T T -J P 3 -6 ? iS E iu . DIODE MODULE S a n R e x Power Diode Module D F 60A A is designed for three phase full wave rectification, which has six diodes connected in a three phase bridge configuration The mounting base of the module is electrically isolated from semiconductor
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60Amp
000007b
DF60AA
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FF-47
Abstract: No abstract text available
Text: ATTENUATORS, PIN DIODE SERIES DF & FF “PHASE-FREE” 0.25-18 GHz GENERAL INFORMATION: KDI/Triangle’s p h a se free Pin diode attenuators chang e the am plitude of a m icrow ave signal with m atched low V S W R over the full attenuation range, and with minimum phase shift change. T he units are supplied with
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FF-18
DF-18
FF-45
DF-45
FF-47
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