NXP date code marking
Abstract: No abstract text available
Text: 006 D-2 BAP50LX DF N1 Silicon PIN diode Rev. 2 — 7 August 2013 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882D leadless ultra small plastic SMD package. 1.2 Features and benefits Low diode capacitance Low diode forward resistance
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BAP50LX
OD882D
sym006
BAP50LX
DFN1006D-2
NXP date code marking
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TSP70
Abstract: No abstract text available
Text: Products Search Home Products Category About Us Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > MOSFETs Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS Package Series
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TSP2305A
TSP40GD120P
TSP25G135T
O-247
TSP25GD135T
TSP25G135P
TSP25GD135P
TSP70
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Untitled
Abstract: No abstract text available
Text: HL1566AF 1.55 µm Laser Diode with EA Modulator Description The HL1566AF is a 1.55 µm InGaAsP distributed-feedback laser diode DFB-LD with a multi-quantum well (MQW) structure. An electroabsorption (EA) modulator is integrated with the laser diode. It is
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HL1566AF
HL1566AF
HL1566AF:
48832Gbps
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Abstract: No abstract text available
Text: Preliminary Data Sheet NX8349YK LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION R08DS0118EJ0100 Rev.1.00 Dec 13, 2013 DESCRIPTION The NX8349YK is 1 310 nm Multiple Quantum Wells MQW structured Distributed Feed-Back (DFB) laser diode
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NX8349YK
R08DS0118EJ0100
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NEC JAPAN 567
Abstract: NX8563LF PX10160E
Text: DATA SHEET LASER DIODE NX8563LF 1 550 nm InGaAsP MQW-DFB LASER DIODE MODULE CW LIGHT SOURCE FOR DWDM APPLICATIONS DESCRIPTION The NX8563LF is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with Polarization Maintain
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NX8563LF
NX8563LF
NEC JAPAN 567
PX10160E
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NX8341UH
Abstract: 10 gb laser diode nec 2702 NX8341 NX8341UN PX10160E
Text: PRELIMINARY DATA SHEET LASER DIODE NX8341 Series 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION The NX8341 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical
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NX8341
NX8341UH
NX8341UN
NX8341UH
10 gb laser diode
nec 2702
NX8341UN
PX10160E
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601 Opto isolator
Abstract: NX8563LF PX10160E
Text: LASER DIODE NX8563LF 1 550 nm InGaAsP MQW-DFB LASER DIODE MODULE CW LIGHT SOURCE FOR DWDM APPLICATIONS DESCRIPTION The NX8563LF is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with Polarization Maintain Fiber (PMF).
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NX8563LF
NX8563LF
601 Opto isolator
PX10160E
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NX6406
Abstract: NX6406GH NX6406GK PX10160E
Text: PRELIMINARY DATA SHEET LASER DIODE NX6406 Series 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR FTTH PON APPLICATION DESCRIPTION The NX6406 Series is a 1 490 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD.
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NX6406
NX6406GH
NX6406GK
PX10160E
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HL1570AF
Abstract: LD 1610
Text: HL1570AF 1.6 µm Laser Diode with EA Modulator Under Development Description The HL1570AF is a 1.6 µm L-BAND InGaAsP distributed-feedback laser diode (DFB-LD) with a multiquantum well (MQW) structure. An electroabsorption (EA) modulator is integrated with the laser diode.
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LD 1610
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601 Opto isolator
Abstract: NX8562LF PX10160E
Text: LASER DIODE NX8562LF 1 550 nm InGaAsP MQW-DFB LASER DIODE MODULE CW LIGHT SOURCE FOR DWDM APPLICATIONS DESCRIPTION The NX8562LF is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with Polarization Maintain Fiber (PMF).
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NX8562LF
NX8562LF
601 Opto isolator
PX10160E
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NX8570SD
Abstract: 409d 766d ETALON 362d TLD 521 315D 346D 377D 967D
Text: LASER DIODE NX8570 Series 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8570 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength
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NX8570
NX8570SD
409d
766d
ETALON
362d
TLD 521
315D
346D
377D
967D
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1583 Series
Abstract: 362d 766d
Text: LASER DIODE NX8571 Series 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8571 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength
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1583 Series
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ingaasp
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NX8562LF 1 550 nm InGaAsP MQW-DFB LASER DIODE MODULE CW LIGHT SOURCE FOR DWDM APPLICATIONS DESCRIPTION The NX8562LF is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with Polarization Maintain
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ingaasp
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continuous wave light source for dwdm system
Abstract: NX8300BE-CC NX8300CE-CC NX8303BG-CC NX8303CG-CC NX8304BE-CC NX8563 NX8563LB NX8563LF 10 gb laser diode
Text: DATA SHEET LASER DIODE NX8563 Series 1 550 nm InGaAsP MQW-DFB LASER DIODE MODULE CW LIGHT SOURCE FOR DWDM APPLICATIONS DESCRIPTION The NX8563 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with Polarization Maintain
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NX8563
continuous wave light source for dwdm system
NX8300BE-CC
NX8300CE-CC
NX8303BG-CC
NX8303CG-CC
NX8304BE-CC
NX8563LB
NX8563LF
10 gb laser diode
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Untitled
Abstract: No abstract text available
Text: HL1553 1.55 Jim Laser Diode with EA Modulator HITACHI Description The HL1553 is a 1.55 |jm InGaAsP distributed-feedback laser diode DFB-LD with a multi-quantum well (MQW) structure. An electroabsorption (EA) modulatoris integrated with the laser diode. It is
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HL1553
HL1553
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Untitled
Abstract: No abstract text available
Text: HL1553 1.55 |um Laser Diode with EA Modulator HITACHI Description The HL1553 is a 1.55 pm InGaAsP distributed-feedback laser diode DFB-LD with a multi-quantum well (MQW) structure. An electroabsorption (EA) modulatoris integrated with the laser diode. It is
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HL1553
HL1553
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Ea 1530 A
Abstract: No abstract text available
Text: HL1566AF 1.55 pm Laser Diode with EA Modulator HITACHI Description The HL1566AF is a 1.55 pm InGaAsP distributed-feedback laser diode DFB-LD with a multi-quantum well (MQW) structure. An electroabsorption (EA) modulator is integratedwith the laser diode. It is
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HL1566AF
HL1566AF
Ea 1530 A
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HL1553
Abstract: T 1553 Hitachi Scans-001
Text: HL1553 1.55 Jim Laser Diode with EA Modulator HITACHI Description The HL1553 is a 1.55 |jm InGaAsP distributed-feedback laser diode DFB-LD with a multi-quantum well (MQW) structure. An electroabsorption (EA) modulatoris integrated with the laser diode. It is
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HL1553
HL1553:
HL1553
48832Gbps
10Ops
T 1553
Hitachi Scans-001
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET LASER DIODE NDL7701P Series 1 550 nm OPTICAL FIBER COMMUNICATIONS InGaAsP PHASE-SHIFTED MQW-DFB LASER DIODE COAXIAL MODULE DESCRIPTION N DL7701P Series are 1 550 nm phase-shifted DFB Distributed Feed-Back laser diode coaxial package modules
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NDL7701P
DL7701P
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Ea 1530 A
Abstract: 1553 optical
Text: HL1553-1.55 pm Laser Diode with EA Modulator Description The HL1553 is a 1.55 firn InGaAsP distributed-feedback laser diode DFB-LD with a multi-quantum well (MQW ) structure. An electroabsorption (EA) modulator is integrated with the laser diode. It is suitable as
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HL1553-------------1
HL1553
HL1553
48832Gbps
100ps
Ea 1530 A
1553 optical
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Untitled
Abstract: No abstract text available
Text: HL1553 1.55 |im Laser Diode with EA Modulator HITACHI Description The HL1553 is a 1.55 iin InGaAsP distributed-feedback laser diode (DFB-LD with a multi-quantum well (MQW) structure. An electroabsorption (EA) modulator is integrated with the laser diode. It is
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HL1553
HL1553
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Ea 1530 A
Abstract: No abstract text available
Text: HL1566AF 1.55 im Laser Diode with EA Modulator HITACHI Description The HL1566AF is a 1.55 jim InGaAsP distributed-feedback laser diode (DFB-LD with a multi-quantum well (MQW) structure. An electroabsorption (EA) modulator is integrated with the laser diode. It is
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HL1566AF
HL1566AF
ST-10
48832G
Ea 1530 A
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Ea 1530 A
Abstract: nrz optical modulator HL1566AF Hitachi Scans-001
Text: HL1566AF 1.55 ¡im Laser Diode with EA Modulator HITACHI Description The HL1566AF is a 1.55 |_im InGaAsP distributed-feedback laser diode DFB-LD with a multi-quantum well (MQW) structure. An electroabsorption (EA) modulator is integrated with the laser diode. It is
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HL1566AF
HL1566AF
48832Gbps
Ea 1530 A
nrz optical modulator
Hitachi Scans-001
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Untitled
Abstract: No abstract text available
Text: HL1566AF 1.55 jam Laser Diode with EA Modulator HITACHI Description The HL1566AF is a 1.55 |_im InGaAsP distributed-feedback laser diode DFB-LD with a multi-quantum well (MQW) structure. An electroabsorption (EA) modulator is integrated with the laser diode. It is
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HL1566AF
HL1566AF
HL1566AFndicular)
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