d2s4m
Abstract: No abstract text available
Text: — 7W 77 Schottky Barrier Diode Axial Diode • — K O U T L IN E D IM E N S IO N S D2S4M 40V 2A ■ Æ fê S R A TIN G S ïê îilf Absolute Maximum Ratings m s SEi§Symbol Item Operating Junction Temperature -Hr A.3MMMI± Maximum Reverse Voltage MOM L -
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AX078
Abstract: MARKING JM 251C 25T160 d2s4m D2S4 122T
Text: Schottky Barrier Diode Axial Diode OUTLINE D2S4M Unit : mm Package I AX078 W eight 0.38g Typ 40V 2A CD = E Feature • Tj=15CfC • T j= 1 5 0 °C • P rrsm P K ^ V î/x (S ü E • P rrsm 27.5 Rating 27.5 I Main Use M * iS M iK im M arking • Switching Regulator
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15ffC
AX078
J533-1
AX078
MARKING JM
251C
25T160
d2s4m
D2S4
122T
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d2s diode
Abstract: D2S DIODE schottky
Text: Schottky Barrier Diode Axial Diode W tm D2S4M OUTLINE Package : A X 40V 2A 078 Unit-mm Weight 0.38g Typ (D Feature • Tj=150°C • P rrs m T ’A ' ^ V ì ' I ' K ì E • Tj=150°C • P r r s m Rating • D C /D C nyjt-l? • mm.cf-A.oAm • • •
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Axial Diode mtm D2S4M OUTLINE Unit: mm Weight 0.38g Typ Package I AX078 30 40V 2A 8 3. Feature • PRRSM^y^ VÍ/X<SÍ¡E • D C /D C 3 • * Œ .y -A .O A * itg * <R0 H (D * Main Use • • • • • 7 27.5 5 27.5 • Tj=150°C
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AX078
150TC
J533-1
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BUK638-500B
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bTE I> • bbS3T31 0030675 Philips semiconductors PowerMOS transistor Fast recovery diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. REDFET with fast recovery reverse diode, particularly suitable
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BUK638-500B
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d2s diode
Abstract: D2S DIODE schottky d2s schottky d2s6m diode d2s 251C AX078
Text: Schottky Barrier Diode Axial Diode OUTLINE Package I AX078 D2S6M 60V 2A i Feature • Tj=15CfC • Tj=150°C • P r r s m P K ^ V î/ x S ü E • P rrsm 27.5 • DC/D c u y jt— ? • WM.f-hs O A tlfg • jS S .J K 27.5 I 5 I Rating Pi <»4.o •2:
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15ffC
AX078
J533-1)
d2s diode
D2S DIODE schottky
d2s schottky
d2s6m
diode d2s
251C
AX078
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Untitled
Abstract: No abstract text available
Text: 5/as/h*- AUT' SH 'Í Schottky Barrier Diode Axial Diode OUTLINE DIMENSIONS D2S4M 40V 2A • T jl5 0 ° C • P r r s m T ’y V 'J i f f i l l •0 .8 0 U - K m •SRSÎÜ •D C /D C •W M, t f- h s OAHtg • £ < § . 7t RATINGS Absolute Maximum Ratings is » fre iré a
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J515-5
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D2S6
Abstract: SHINDENGEN DIODE TVR diode
Text: '> 3 7 T ’ á r V - V J t 't f - í^ - K Axial Diode Schottky Barrier Diode IW ^ Ä B I D2S6M OUTLINE DIMENSIONS Case :0!8^ SÎSÎ 275“ 27.5 ±! 60V 2A Ö 1* • T j 15013 00 • P rrsm H 0 ifiiK • 0.80 U - K ''C o lo r c o d e B lu e ¡« JC E P M III8
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50HziK^
D2S6
SHINDENGEN DIODE
TVR diode
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Untitled
Abstract: No abstract text available
Text: ya>y S ch ottk y Barrier Diode Axial Diode OUTLINE DIMENSIONS D2S4M 40V 2A E i a • T j 15 0 ”C T tK ^ y is x U S i •P rrs m • 0 .8 0 i j - h * ffl & •S R « g •D C /D C H V A -? • * S . y - A . 0 A * ffi • in a . tk • Æ tè * RATINGS Absolute Maximum Ratings
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25t65
Abstract: marking code riy
Text: Schottky Barrier Diode Axial Diode Wtm D2S6M P a cka g e OUTLINE U n it-m m : A X 0 7 8 W e ig h t 0 .3 8 g T y p 60V 2A Feature • Tj=150°C • Tj=150°C • P rrs m T ’A ' ^ V ì ' I ' K ì E • P rrsm Rating (!> Main Use —M— M a rk in g • DC/DC Converter
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D2S6M
Abstract: No abstract text available
Text: 5/as/h*- AUT' S H 'Í Schottky Barrier Diode Axial Diode OUTLINE DIMENSIONS D2S6M 60V 2A • T jl5 0 ° C V 'J i f f i l l • P r r s m T ’y • 0 .8 0 U - K m •SRSÎÜ • D C /D C •W M , t f - h s O A H tg • £ < § . 7t RATINGS Absolute Maximum Ratings is » fre iré a
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J515-5
D2S6M
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Untitled
Abstract: No abstract text available
Text: y a 7 h 3 F -/* U y ^ — K Schottky Barrier Diode Axial Diode OUTLINE DIMENSIONS D2S6M C a s e : 0 .8 <j> 2 7 .5 “ 27.5 1 ! 5 -K 60V 2A 1 * ~Q ~ • T j l 5 0 lC î o W o ( •P rrs m • 0 .8 0 U - K ''C o lo r co d e (B lue) x m • S R z m m im D 2S
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BE113Ã
DQD3111
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2952A
Abstract: SHINDENGEN DIODE
Text: y 3 y h ^/'v UT ^ —K S ch ottk y Barrier Diode Axial Diode m D2S4M 40V 2A •T j OUTLINE DIMENSIONS Case : 0.8 ^ II 1 5 0 TC T o 0 ( 2) M • P h R S M T’ I'y Z J 'J 'J ifiSÏ • 0 .8 0 U - K W & W K iN ) ''C o lo r c o d e (S ilv e r) ffl Ì* # < 5 0 ] S M ia
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DIODE D3S 90
Abstract: BC 247 sot-23 d2s diode DIODE d3s TRAY DIMENSIONS SOIC16 tape & reel d3s diode
Text: Discrete Surface Mount Prefixes Suffixes Pkg dim D-PAK TO-252-2L RHRD RURD S S D2S Dim D-PAK (TO-252-3L) IRFR RFD RLD FDD MOSFET Bipolar Diode JFETs IGBT Pkg method Qty (pcs) Reel dia Tape width (inch) (mm) Tape & Reel 2.5K 13 16 X Tape & Reel 2.5K 13 16
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O-252-2L)
O-252-3L)
O-263/D2PAK
O-263/D2PAK
O-268
DIODE D3S 90
BC 247 sot-23
d2s diode
DIODE d3s
TRAY DIMENSIONS SOIC16
tape & reel
d3s diode
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Untitled
Abstract: No abstract text available
Text: m s 'f X f 'C J Low Noise type Single In-line Package Bridge Diode • W IN -ä s ia OUTLINE DIMENSIONS D2SB60L 600V 1.5A 45 £1 •»süsiPA’s /'r-y • f iy - r x RATINGS Absolute Maximum Ratings m 1 Item « » fiK Storage Temperature Operating Junction Temperature
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D2SB60L
D2SB60L
50HziEK®
J514-5
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circuit diagram of moving LED message display
Abstract: 78l033 78l03 moving message LED display schematic led moving message display components circuit diagram of moving message display using 8 BLOCK diagram of moving LED message display pc led moving message display L.E.D Moving Display Board Moving Display Board circuit
Text: a Evaluation Board for Microprocessor System Temperature Monitor EVAL-ADM1022 FEATURES External Temperature Measurement with Remote Diode Two Channels On-Chip Temperature Sensor Interrupt and Overtemperature Outputs Fault Tolerant Fan Control Brownout Detection
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EVAL-ADM1022
ADM1022
2N3904
2N3906
1N4001
ADM1022
AD820
74HC05
78L033
circuit diagram of moving LED message display
78l033
78l03
moving message LED display schematic
led moving message display components
circuit diagram of moving message display using 8
BLOCK diagram of moving LED message display
pc led moving message display
L.E.D Moving Display Board
Moving Display Board circuit
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D2SB 73
Abstract: d2sb
Text: - j'j v V ÿ 'C t - F Bridge Diode î / y ^ n / ' f y ^ ' f y M Single In-line Package OUTLINE DIMENSIONS D2SBA 600V 1.5A 45 £1 •»süsiPA’y 'r -y • H I fsm RATINGS • ÌÈ $ ÌÌt ^ /È !Ì& a s Item fa -t Symbol Operating Junction Temperature Tstg
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50HzjESSt,
J514-5
D2SB 73
d2sb
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Untitled
Abstract: No abstract text available
Text: Bridge Diode Single In-line Package OUTLINE D2SB60 600V 1.5A • • Unit : mm Weight : 2.0g typ. Package 2S 品名 Type No. SIP IFSM ロット記号（例） Date code 20 D2SB ＋ ① Feature ~ ∼ ② ③ 60 − ④ + ∼ 11 68 ∼ − 級表示（例）
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D2SB60
J534-1
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Untitled
Abstract: No abstract text available
Text: Bridge Diode D2SB60 Single In-line Package OUTLINE 600V 1.5A • • SIP IFSM • Thin-SIP • Large IFSM Unit : mm Weight : 2.0g typ. Package 2S 品名 Type No. ロット記号（例） Date code 20 D2SB ＋ ① ~ ∼ ② ③ 60 − ④ + ∼ 11 68 ∼
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D2SB60
J534-1
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Untitled
Abstract: No abstract text available
Text: シングルインライン型 Bridge Diode Single In-line Package •外観図 OUTLINE D2SB60 Unit : mm Weight : 2.0g （typ.） Package：2S 600V 1.5A 品名 Type No. 特長 • 薄型 SIP パッケージ • 高 IFSM ロット記号（例） Date code
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D2SB60
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d2sba
Abstract: D2SBA60 D2SBA20
Text: シングルインライン型 ブリッジダイオード Single In-line Package Bridge Diode •外形寸法図 OUTLINE DIMENSIONS Package：2S Unit : mm Weight：2g（typ.） D2SBA□ 600V 1.5A 品名 Type No. ロット記号（例） Date code 3.5±0.2
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25unless
D2SBA20
D2SBA60
wave50Hz
d2sba
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d2sb
Abstract: No abstract text available
Text: シングルインライン型 ブリッジダイオード Single In-line Package Bridge Diode •外形寸法図 OUTLINE DIMENSIONS Package：2S Unit : mm Weight：2g（typ.） D2SB□ 品名 Type No. 800V 1.5A ロット記号（例） Date code 3.5±0.2
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25unless
wave50Hz
d2sb
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D2SB 60A 45
Abstract: D2SB 60A d2sba d2sb D2SB60A 800v 2a D2SB80A bridge diode 60a
Text: シングルインライン型 Bridge Diode Single In-line Package •外観図 OUTLINE D2SB□A Unit : mm Weight : 2g （typ.） Package：2S 800V 2A 品名 Type No. 特長 • 薄型 SIP パッケージ • 高 IFSM ロット記号（例） Date code 20
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25unless
D2SB60A
D2SB80A
1mst10msTj
D2SB 60A 45
D2SB 60A
d2sba
d2sb
800v 2a
D2SB80A
bridge diode 60a
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D2SB 60A
Abstract: D2SB80A
Text: シングルインライン型 ブリッジダイオード Single In-line Package Bridge Diode •外形寸法図 OUTLINE DIMENSIONS Package：2S Unit : mm Weight：2g（typ.） D2SB□A 品名 Type No. 800V 2A ロット記号（例） Date code 3.5±0.2
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25unless
D2SB60A
D2SB80A
-40es
wave50Hz
D2SB 60A
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