CM121308
Abstract: CM1213-02SR CM1213-01ST
Text: CM1213 1, 2, 4, 6 and 8-Channel Low Capacitance ESD Protection Arrays Features Product Description • • The CM1213 family of diode arrays has been designed to provide ESD protection for electronic components or sub-systems requiring minimal capacitive loading.
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CM1213
IEC61000-4-2
MSOP-10
CM121308
CM1213-02SR
CM1213-01ST
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cm1213-04st
Abstract: 025 SOT23 CM1213-04SO CM1213 CM1213-01ST CM121308 CM1213-02SR D138 marking Zener diode sot23-5 california micro CM1213-02SS
Text: CM1213 1, 2, 4, 6 and 8-Channel Low Capacitance ESD Protection Arrays Features Product Description • • The CM1213 family of diode arrays has been designed to provide ESD protection for electronic components or sub-systems requiring minimal capacitive loading.
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CM1213
CM1213
MSOP-10
cm1213-04st
025 SOT23
CM1213-04SO
CM1213-01ST
CM121308
CM1213-02SR
D138 marking
Zener diode sot23-5 california micro
CM1213-02SS
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CM1213-02ST
Abstract: CM1213-02SR CM1213-04SO ZENER DIODE E1 025 SOT23 3-pin D128 transistor HDMI D136 d138 SOT143 package CM1213 diode zener 05
Text: CM1213 1, 2, 4, 6 and 8-Channel Low Capacitance ESD Protection Arrays Features Product Description • • The CM1213 family of diode arrays has been designed to provide ESD protection for electronic components or sub-systems requiring minimal capacitive loading.
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CM1213
CM1213
MSOP-10
CM1213-02ST
CM1213-02SR
CM1213-04SO
ZENER DIODE E1
025 SOT23
3-pin D128 transistor
HDMI D136 d138
SOT143 package
diode zener 05
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CM1213-04SO
Abstract: No abstract text available
Text: CM1213 1, 2, 4, 6 and 8-Channel Low Capacitance ESD Protection Arrays Features Product Description • • The CM1213 family of diode arrays has been designed to provide ESD protection for electronic components or sub-systems requiring minimal capacitive loading.
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CM1213
IEC61000-4-2
MSOP-10
CM1213-04SO
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CM1213-04SO
Abstract: CM1213 D123 CM1213-02SR CM1213-04ST Zener diode sot23-5 california micro CM121308
Text: CM1213 1, 2, 4, 6 and 8-Channel Low Capacitance ESD Protection Arrays Features Product Description • • The CM1213 family of diode arrays has been designed to provide ESD protection for electronic components or sub-systems requiring minimal capacitive loading.
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CM1213
CM1213
MSOP-10
CM1213-04SO
D123
CM1213-02SR
CM1213-04ST
Zener diode sot23-5 california micro
CM121308
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CM1213-02SS
Abstract: CM1213 CM1213-A4MR CM121308
Text: CM1213 1, 2, 4, 6 and 8-Channel Low Capacitance ESD Protection Arrays Features Product Description • • The CM1213 family of diode arrays has been designed to provide ESD protection for electronic components or sub-systems requiring minimal capacitive loading.
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CM1213
CM1213
MSOP-10
CM1213-02SS
CM1213-A4MR
CM121308
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Untitled
Abstract: No abstract text available
Text: CM1213 1, 2, 4, 6 and 8-Channel Low Capacitance ESD Protection Arrays Features Product Description • • The CM1213 family of diode arrays has been designed to provide ESD protection for electronic components or sub-systems requiring minimal capacitive loading.
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CM1213
CM1213
MSOP-10
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CM1213-02SS
Abstract: CM121308 marking d1x1 CM1213-01ST
Text: CM1213 1, 2, 4, 6 and 8-Channel Low Capacitance ESD Protection Arrays Features Product Description • • The CM1213 family of diode arrays has been designed to provide ESD protection for electronic components or sub-systems requiring minimal capacitive loading.
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CM1213
MSOP-10
CM1213-02SS
CM121308
marking d1x1
CM1213-01ST
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Untitled
Abstract: No abstract text available
Text: CD510825 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Dual Diode POW-R-BLOK Modules 250 Amperes/800 Volts A J (4 TYP.) 1 2 P - M8 THD (4 TYP.) 4 3 H C M L - DIA. (2 TYP.) F B E F B D G A E N A1 1 K1 K2 3 2 CD510825
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CD510825
Amperes/800
D-122
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A1 dual diode
Abstract: CD51 CD510825 K232 powerex cd51
Text: CD510825 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Dual Diode POW-R-BLOK Modules 250 Amperes/800 Volts A J (4 TYP.) 1 2 P - M8 THD (4 TYP.) 4 3 H C M L - DIA. (2 TYP.) F B E F B D G A E N A1 1 K1 K2 3 2 CD510825
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CD510825
Amperes/800
D-122
A1 dual diode
CD51
CD510825
K232
powerex cd51
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Untitled
Abstract: No abstract text available
Text: S T U/D1224N S amHop Microelectronics C orp. Dec 20,2004 N-C hannel E nhancement Mode Field E ffect Trans is tor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m Ω) Max R ugged and reliable. 80 @ V G S = 4.5V
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U/D1224N
O-252
O-251
O-252AA
O-252
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Untitled
Abstract: No abstract text available
Text: S T U/D1224N S amHop Microelectronics C orp. Dec 20,2004 N-C hannel E nhancement Mode Field E ffect Trans is tor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m Ω) Max R ugged and reliable. 80 @ V G S = 4.5V
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U/D1224N
O-252
O-251
O-252AA
Tube/TO-252
O-252
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Dsei 2x101-12A
Abstract: ixys dsei 1x31-06c ixys dsei 2x31-06c IXYS DSEI 2X121-02a ixys dsei 2x30-06c DSEI IXYS 2x31-12B 2x61-06c 2x121-02a 2x31-12B 2x31-10b
Text: FRED Contents Package style/Bauform 1b TO-252 AA 1b 1 1a 1 TO-220 AC 1 1a TO-263 AA 1a 2 TO-247 AD 2 2a TO-247 AD 2b ISOPLUS 247 TM 2a/b 2a 2a 3 SOT-227 B, miniBLOC 3 1999 IXYS All rights reserved VRRM IFAV trr V A ns 600 600 600 6 8 8 35 35 35 600 1000
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O-252
0-06A
0-10A
0-12A
D1-16
D1-18
D1-20
0-02A
Dsei 2x101-12A
ixys dsei 1x31-06c
ixys dsei 2x31-06c
IXYS DSEI 2X121-02a
ixys dsei 2x30-06c
DSEI IXYS 2x31-12B
2x61-06c
2x121-02a
2x31-12B
2x31-10b
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bck-28
Abstract: TRANSFORMER bck zd103 lx6503 SWITCHING TRANSISTOR C144 PC101 optocoupler d313 TRANSISTOR equivalent DIODE zd101 sfh817a transistor D313 pin configuration
Text: TND360/D Rev. 0, February 2009 Up to 180 W High Voltage LCD TV Power and Integrated Inverter Supply 12 February 2009 2009 ON Semiconductor Disclaimer: ON Semiconductor is providing this reference design documentation package “AS IS” and the recipient assumes all risk associated with the use
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TND360/D
SM02B-BHSS-1-TB
IC300
LX6503-IDW
220pF
PIT125050-3551
PBT-07087-1322G
ON-MICRO-LIPS-32"
bck-28
TRANSFORMER bck
zd103
lx6503
SWITCHING TRANSISTOR C144
PC101 optocoupler
d313 TRANSISTOR equivalent
DIODE zd101
sfh817a
transistor D313 pin configuration
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relay finder 45.61
Abstract: reed 3500 2301 151 MT2C93419 reed 3500 2301 tyco igbt module 25A 1200V 5V SPST DIL Reed Relay Transistor tag 9013 Triac TAG 9013 3258 smd led varistor BS415
Text: 2295 Technical portal and online community for Design Engineers - www.element-14.com Relays & Solenoids Page 2343 2336 2310 2347 2298 2320 2346 8 & 11 Pin Plug-In Power Relays. . . . . . . . . . . . . Automotive Relays . . . . . . . . . . . . . . . . . . . . . . . . .
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element-14
Safety10
A331-1-C2A7M
A331-1-C2-A73
24Vdc
110Vac
240Vac
A331-1-C2-A7D
relay finder 45.61
reed 3500 2301 151
MT2C93419
reed 3500 2301
tyco igbt module 25A 1200V
5V SPST DIL Reed Relay
Transistor tag 9013
Triac TAG 9013
3258 smd led
varistor BS415
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l312f
Abstract: L522F RSF74Y100RM L622F relay d2w B512F-2T L514F 24HV1A100 m505032 cpv240
Text: Solid State Relays All Dimensions Are in Inches mm Featuring state-of-the-art Surface Mount Technology, these SPST-NO relays deliver proven reliability in the most demanding applications. Output consists of an SCR AC switch and is available in zero-cross and
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40-600V,
CMD2425
CMD2450
CMD2475
CMD2490
CMD24110
CMD24125
CMD4825
CMD4850
CMD4875
l312f
L522F
RSF74Y100RM
L622F
relay d2w
B512F-2T
L514F
24HV1A100
m505032
cpv240
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IC-310
Abstract: CCD linear image sensor 22-pin scanner S124
Text: TCD2704D TOSHIBA CCD Linear Image Sensor CCD charge coupled device Preliminary TCD2704D The TCD2704D is a high sensitive and low dark current 7500 elements x 4 line CCD color image sensor which includes CCD drive circuit, clamp circuit. The sensor is designed for scanner. The device contains a row of
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TCD2704D
TCD2704D
IC-310
CCD linear image sensor 22-pin scanner
S124
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CCD linear image sensor 22-pin scanner
Abstract: S124
Text: TCD2561D TOSHIBA CCD Linear Image Sensor CCD charge coupled device Preliminary TCD2561D The TCD2561D is a high sensitive and low dark current 5340 elements x 4 line CCD color image sensor which includes CCD drive circuit, clamp circuit. The sensor is designed for scanner. The device contains a row of
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TCD2561D
TCD2561D
CCD linear image sensor 22-pin scanner
S124
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thyristor k 202 russian
Abstract: russian diode kp20a 600v kp20a ZP20A optothyristor KP300A KP200A T143-630 SCR zp5a
Text: CONTENT RECTIFIER DIODES THREADED STUD DESIGN RUSSIAN PURPOSE 2 PRESS PACK RECTIFIER DIODES (RUSSIAN PURPOSE) 2 AVALANCHE RECTIFIER DIODES THREADED STUD DESIGN (RUSSIAN PURPOSE) 3 AVALANCHE RECTIFIER DIODES PRESS PACK (RUSSIAN PURPOSE) 3 FAST RECOVERY DIODES THREADED STUD DESIGN (RUSSIAN PURPOSE)
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SS15BL
M6x15
M6x10
thyristor k 202 russian
russian diode
kp20a 600v
kp20a
ZP20A
optothyristor
KP300A
KP200A
T143-630 SCR
zp5a
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1225C
Abstract: hy 1418 590uH IC MPC 1420 018U 2SD1399 HT 12E APPLICATION 2SC227I
Text: SA NY O S E M I C O N D U C T O R CORP 1SE D | 7 in 7 D 7 b 2SD1399 0O0SD7fl r -3 3 N P N T rip le D iffu s e d P la n a r S ilic o n T r a n s is to r 2022 Color TV Horizontal Deflection Output Applications with Damper Diode (D1225C Features: • High Breakdown Voltage and High Reliability.
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2SD1399
1225C
ElectrBH81
0DGB752
1225C
hy 1418
590uH
IC MPC 1420
018U
2SD1399
HT 12E APPLICATION
2SC227I
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Untitled
Abstract: No abstract text available
Text: S IE M E N S Silicon Switching Diode Array SMBD 2837 SMBD 2838 • For high-speed switching applications • Common cathode Type Marking Ordering Code tape and reel S M B D 2837 S M B D 2838 sA5 sA4 Q68000-A8487 Q68000-A8437 Pin Configuration Package1) ï
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Q68000-A8487
Q68000-A8437
OT-23
EHA0700*
0235bG5
01225Gb
D1225D7
6235bG5
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IRF 544 N MOSFET
Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no
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Untitled
Abstract: No abstract text available
Text: SIEMENS SIEGET 25 BFP 450 NPN Silicon RF Transistor • For medium power amplifiers • Compression point P.1dB = +19dB m at 1.8 GHz maximum available gain Gma = 14 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency f j = 24 GHz • Gold metalization for high reliability
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Q62702-F1590
OT-343
2200b
IS21I2
fl235bQS
0122QQ7
0235b05
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609-5015M
Abstract: D0061b TD2425-B tb ansley TD2425F CRY30M 609-2615M crydom as0241 three phase SCR gate drive circuit AC15A
Text: Solid S t a t e Relays I n p u t /O u t p u t M o du les P o w er M o du les CRY3 SSSffft-VX ifWM 0 M D53TP 50D INPUT STATUS /Z iiŒ w « a i2 CSYDOM CH Y O O M 3 PHASE SOUD STATE RELAY S O U O -S T A T E R E L> S O U O -S T A T E RELAY \j % A C R Y D O M
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D53TP
D2425
A0241
CX380D5
4-13VDC
380VAC
E72445)
609-5015M
D0061b
TD2425-B
tb ansley
TD2425F
CRY30M
609-2615M
crydom as0241
three phase SCR gate drive circuit
AC15A
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