d12s60
Abstract: SDT12S60 diode schottky code 03 Schottky diode TO220 Q67040-S4470 US180
Text: SDT12S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 30 nC • No reverse recovery
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SDT12S60
PG-TO220-2-2.
Q67040-S4470
D12S60
PG-TO-220-2-2
d12s60
SDT12S60
diode schottky code 03
Schottky diode TO220
Q67040-S4470
US180
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Untitled
Abstract: No abstract text available
Text: Photo Diode Product No: M T D1200M3B Peak Sensitivity Wavelength: 925nm The MTD1200M3B is a photo diode in a ceramic package. It is well suited for high reliability and high sensitivity applications. FEATURES APPLICATIONS > Very Small Dark Current > Optical Switches
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D1200M3B
925nm
MTD1200M3B
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d12s60
Abstract: SDT12S60
Text: SDT12S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 30 nC • No reverse recovery
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SDT12S60
PG-TO220-2-2.
Q67040-S4470
D12S60
d12s60
SDT12S60
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d12s60
Abstract: D12S60C Q67040-S4470 SDT12S60
Text: SDT12S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 30 nC • No reverse recovery
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SDT12S60
P-TO220-2-2.
Q67040-S4470
D12S60
d12s60
D12S60C
Q67040-S4470
SDT12S60
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Untitled
Abstract: No abstract text available
Text: SDT12S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 30 nC • No reverse recovery
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SDT12S60
PG-TO220-2-2.
Q67040-S4470
D12S60
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D1265C5
Abstract: d1265 IDH12G65C5
Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH12G65C5 Final Datasheet Rev. 2.1, 2012-09-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the
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IDH12G65C5
D1265C5
d1265
IDH12G65C5
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D1265C5
Abstract: No abstract text available
Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDW12G65C5 Final Datasheet Rev. 2.1, 2012-09-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDW12G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the
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IDW12G65C5
D1265C5
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Untitled
Abstract: No abstract text available
Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH12G65C5 Final Datasheet Rev. 2.2, 2012-12-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDH12G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC
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IDH12G65C5
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Untitled
Abstract: No abstract text available
Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDW12G65C5 Final Datasheet Rev. 2.2, 2013-01-15 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDW12G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC
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IDW12G65C5
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Untitled
Abstract: No abstract text available
Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH12G65C5 Final Datasheet Rev. 2.2, 2012-12-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDH12G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC
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IDH12G65C5
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Untitled
Abstract: No abstract text available
Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDK12G65C5 Final Data Sheet Rev. 2.0, 2013-07-20 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDK12G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC
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IDK12G65C5
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Untitled
Abstract: No abstract text available
Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDW12G65C5 Final Datasheet Rev. 2.2, 2013-01-15 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDW12G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC
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IDW12G65C5
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FS50R12W2T4
Abstract: No abstract text available
Text: Technische Information / technical information FS50R12W2T4_B11 IGBT-Module IGBT-modules EasyPACK2B Modul PressFIT mit Trench/Feldstopp IGBT4 und Emitter Controlled4 Diode EasyPACK2B module PressFIT with trench/fieldstop IGBT4 and Emitter Controlled4 Diode
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FS50R12W2T4
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Untitled
Abstract: No abstract text available
Text: LL4448 Small Signal Diodes FEATURES M iniM ELF ♦ Silicon Epitaxial Planar Diode ♦ Fast sw itching diode in M iniM E LF case especially suited for autom atic insertion. « This diode is also available in other case styles including: the DO-35 case with the type
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LL4448
DO-35
1N4448,
D-123
1N4448W,
OT-23
BD4448.
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Untitled
Abstract: No abstract text available
Text: — K ïÎ'n .— i> Diode Module n - n x V 'C X - Y - Super Fast Recovery Diode OUTLINE DIMENSIONS D120LC40 400V 120A > t r r l 00n s > F A s D 7 tt'iy h RATINGS Absolute Maximum Ratings a a Ite m Storage Temperature m &nm m Operating Junction Temperature
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D120LC40
J515-5
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a1024
Abstract: Panasonic diode MA1033 DIODE D29 MA4030 ma4300 zener MA2560 MA7056 MA1Z091 MA2430
Text: Diode # Zener Diode Series Zener Voltage Vz V MA1000 DO-35 (D28) P d = 500mW MA2000 DO-41 (D29) P D = 1W MA3000/MAZ Mini Type 3 pins (D12) P d = 200mW MA4000 DO-34 (D26) Pc = 370mW MA5000 Mini-Power Type 2 pins (D17) P D = 500mW MA7000 DO-41 (D29) P d = 800mW
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MA1000
DO-35
500mW
MA1020
A1022
A1024
A1027
MA1030
MA1033
MA1036
Panasonic diode
DIODE D29
MA4030
ma4300 zener
MA2560
MA7056
MA1Z091
MA2430
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Diode Module Wtm D120SC4M OUTLINE 40 V 120A Feature V 3 I \j • • High lo Rating-Module-PKG .— • Low V f • fiV f • Small B jc Main Use • High Power Switching Regulator • DC/DC Z\yjï-S • DC/DC Converter • • Main Frame
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D120SC4M
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Untitled
Abstract: No abstract text available
Text: i / 3 y h * - JVJT S H 'Î-K —K ïS'n.—JU Diode Module Schottky Barrier Diode OUTLINE DIMENSIONS D120SC4M 40 V 120 A l> US V f ► s jc ô '/ jv ^ u > *§ kS R S Ü »D C /D C H C x T .^ ÜfêÉIlfi:«* r s tfi< f i ÿ v>) RATINGS Absolute Maximum Ratings
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D120SC4M
100ns,
J515-5
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Diode Module mtm D120SC6M OUTLINE 60 V 120A Feature • High lo Rating -Module-PKG • f i Vf • Low V f • 8 j c jÿ 'J '£ U • Small 9 je • X M Z 'f y f - y iM M • High Power Switching Regulator • DC/DC z • DC/DC Converter
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D120SC6M
J533-1)
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Diode Module mtm D120SC4M OUTLINE 40 V 120A Feature • High lo Rating -Module-PKG • f i Vf • Low V f • 8 • Small 9 je • X M Z 'fy f-y iM M • High Power Switching Regulator • D C /D C z i y j { - 3 • DC/DC Converter
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D120SC4M
J533-1
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D120SC4M
Abstract: D120S marking code maw
Text: Schottky Barrier Diode Diode Module mm OUTLINE D120SC4M 40 V 120A Feature • High Io Rating-Module-PKG • Low V f •«Vf • e jc • Small 9 je ö V J 'iu Main U se • High Power Switching Regulator • D C /D C U V A -? • DC/DC Converter • ^ S â D V t ia - ?
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D120SC4M
J533-1
D120SC4M
D120S
marking code maw
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DIODE MARKING GU
Abstract: D120SC6M D240SC6M diode marking code 7 CF100I LZ43 J533
Text: Schottky Barrier Diode Diode Module M Hïïm D120SC6M OUTLINE 60 V 120A Feature •« V • High Io Rating-Module-PKG • Low V f • Small 9 je f • 8 j c ô V J 'Î l' Main Use • • • • • DC/DC nyjt—? • IC x T .? High Power Switching Regulator
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D120SC6M
D240SC6M
CJ533-1
DIODE MARKING GU
D120SC6M
D240SC6M
diode marking code 7
CF100I
LZ43
J533
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marking tju
Abstract: No abstract text available
Text: Schottky Barrier Diode Diode Module Wtm D120SC6M OUTLINE 60 V 120A Feature V 3 I \j • • High lo Rating-Module-PKG • Low V f • Small jc .— • f iV f B Main Use • • • • • DC/DC Z \ y j ï - S S ’ • • IC x X i? High Power Switching Regulator
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D120SC6M
marking tju
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Untitled
Abstract: No abstract text available
Text: Super P ast Recovery Diode Diode Module mmttfem D120LC40B o u t l i n e d im en sio n s Case : Modules 400V 120A ¥ •trrl 00ns •têmsé •*mmm •F A . O X y K • Æ fê ü RATINGS Absolute Maxim um Ratings Item uu&m V Maximum Reverse Voltage Average Rectified Forward Current
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D120LC40B
Tc--60
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