Untitled
Abstract: No abstract text available
Text: SN74S1051 12-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY SDLS018A – SEPTEMBER 1990 – REVISED AUGUST 1997 D D D D D OR N PACKAGE TOP VIEW Designed to Reduce Reflection Noise Repetitive Peak Forward Current to 200 mA 12-Bit Array Structure Suited for
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SN74S1051
12-BIT
SDLS018A
300-mil
SN74S1051DR
SN74S1051N
SN74S1051NSR
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Untitled
Abstract: No abstract text available
Text: SN74S1053 16-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY SDLS017A – SEPTEMBER 1990 – REVISED AUGUST 1997 D D D D DW OR N PACKAGE TOP VIEW Designed to Reduce Reflection Noise Repetitive Peak Forward Current to 200 mA 16-Bit Array Structure Suited for
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SN74S1053
16-BIT
SDLS017A
300-mil
18tal
SDYA010
SDYA012
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ix 3368
Abstract: logic selection guide
Text: SN74S1053 16-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY SDLS017A – SEPTEMBER 1990 – REVISED AUGUST 1997 D D D D DW OR N PACKAGE TOP VIEW Designed to Reduce Reflection Noise Repetitive Peak Forward Current to 200 mA 16-Bit Array Structure Suited for
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SN74S1053
16-BIT
SDLS017A
300-mil
18rmination
SN74S1053DBR
SN74S1053DW
ix 3368
logic selection guide
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EBV diode
Abstract: No abstract text available
Text: SN74S1053 16-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY SDLS017A – SEPTEMBER 1990 – REVISED AUGUST 1997 D D D D DW OR N PACKAGE TOP VIEW Designed to Reduce Reflection Noise Repetitive Peak Forward Current to 200 mA 16-Bit Array Structure Suited for
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SN74S1053
16-BIT
SDLS017A
300-mil
18053NSR
SN74S1053PW
SN74S1053PWR
EBV diode
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D0807
Abstract: v426 309H FUJINON TV LENS CF25L fujinon
Text: 1/7 inch 110k pixel Primary color filter CIF CMOS Image Sensor with A/D converter TCM5053LU Technical data sheet Tentative Ver. 4.6 April 17th, 2001 TOSHIBA Corporation Semiconductor Company, System LSI Division Marketing & Engineering Group Digital Consumer System LSI & Image Sensor
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TCM5053LU
009mm
577mm
30fps
TC90A81F,
TC90A81F
D0807
v426
309H
FUJINON TV LENS
CF25L fujinon
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HX5116
Abstract: S107 S160 C22N C22P
Text: Document No.: Tentative Product Specification Module name: BL034ACRNBp$ Issue date: 2008/11/21 Version: 1.8 Customer Approved by Customer Approved by BOLYMIN PD Division ENG Division QA Dept Note: 1. The information contained herein may be change without prior notice. It is therefore advisable to contact BOLYMIN
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BL034ACRNBp$
240hr
30min)
HX5116
S107
S160
C22N
C22P
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Untitled
Abstract: No abstract text available
Text: TECH. CORP. OKAYA Electric America, Inc. SPECIFICATIONS CUSTOMER : CUS007 : SE9664WRF-004-I02Q MASS PRODUCTION CODE : This Code will be changed while mass production PE9664WRF-004-I02Q SAMPLE MASS VERSION PRODUCTION CODE : 01 RS320240T-3X5WN-A (REV.A) SPECIFICATIONS EDITION
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CUS007
SE9664WRF-004-I02Q
PE9664WRF-004-I02Q
RS320240T-3X5WN-A
JLMD-PE9664WRF-004-I02Q
JPKG-PE9664WRF-004-I02Q
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Untitled
Abstract: No abstract text available
Text: SN74S1051 12-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY SDLS018B – SEPTEMBER 1990 – REVISED MARCH 2003 D D D D, N, NS, OR PW PACKAGE TOP VIEW Designed to Reduce Reflection Noise Repetitive Peak Forward Current to 200 mA 12-Bit Array Structure Suited for
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SN74S1051
12-BIT
SDLS018B
scyd013
sdyu001x
sgyc003d
scyb017a
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HX8257A
Abstract: s534 diode HX8257-a g434 diode s448 schottky diode S698 DIODE Himax HX8257-A HX8257-A01 Himax CKV 2310
Text: DOC No. HX8257-A01-DS HX8257-A01 480RGBX272 TFT LCD Single Chip Digital Driver Version 01, November 2008 HX8257-A01 480RGBX272 TFT LCD Single Chip Digital Driver Version 01 November 2008 1. 2. 3. 4. 5. 6. 7. General Description . 4
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HX8257-A01-DS
HX8257-A01
480RGBX272
68November,
HX8257-A01BPDXXX
69November,
HX8257A
s534 diode
HX8257-a
g434 diode
s448 schottky diode
S698 DIODE
Himax HX8257-A
HX8257-A01
Himax
CKV 2310
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Untitled
Abstract: No abstract text available
Text: SN74S1053 16-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY SDLS017A – SEPTEMBER 1990 – REVISED AUGUST 1997 D D D D DW OR N PACKAGE TOP VIEW Designed to Reduce Reflection Noise Repetitive Peak Forward Current to 200 mA 16-Bit Array Structure Suited for
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SN74S1053
16-BIT
SDLS017A
300-mil
sdyu001x
sgyc003d
scyb017a
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HX5116
Abstract: bl043 C22N C22P S107 S160 BL043ACRNB 42 inch display
Text: Document No.: Tentative Product Specification Module name: BL043ACRNB$ Issue date: 2008/07/21 Version: 1.3 Customer Approved by Customer Approved by BOLYMIN PD Division ENG Division QA Dept Note: 1. The information contained herein may be change without prior notice. It is therefore advisable to contact BOLYMIN
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BL043ACRNB$
240hr
HX5116
bl043
C22N
C22P
S107
S160
BL043ACRNB
42 inch display
|
HX5116
Abstract: OLED waveforms bl043 23/yamaha dx7 C22N C22P S107 S160 24bit parallel RGB to 8bit vspl
Text: Document No.: Tentative Product Specification Module name: BL043ACRNBp$ Issue date: 2008/07/21 Version: 1.3 Customer Approved by Customer Approved by BOLYMIN PD Division ENG Division QA Dept Note: 1. The information contained herein may be change without prior notice. It is therefore advisable to contact BOLYMIN
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BL043ACRNBp$
240hr
HX5116
OLED waveforms
bl043
23/yamaha dx7
C22N
C22P
S107
S160
24bit parallel RGB to 8bit
vspl
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HX5116
Abstract: C22N C22P S107 S160 BL034ACRNB diode b212
Text: Document No.: Tentative Product Specification Module name: BL034ACRNB$ Issue date: 2008/12/01 Version: 1.9 Customer Approved by Customer Approved by BOLYMIN PD Division ENG Division QA Dept Note: 1. The information contained herein may be change without prior notice. It is therefore advisable to contact BOLYMIN
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BL034ACRNB$
240hr
30min)
HX5116
C22N
C22P
S107
S160
BL034ACRNB
diode b212
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Untitled
Abstract: No abstract text available
Text: SN74S1056 8-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY _SDLS019B- APRIL 1990 - REVISED JULY 1997 Designed to Reduce Reflection Noise SC PACKAGE TOP VIEW Repetitive Peak Forward Current 300 mA 8-Bit Array Structure Suited for Bus-Oriented Systems
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SN74S1056
SDLS019B-
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switching diode 16 array
Abstract: diode d07 ScansUX7 SN74S1056
Text: SN74S1056 8-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY SDLS019 - D3492, APRIL 1990 • Designed to Reduce Reflection Noise • Repetitive Peak Forward Current. . . 300 mA SC PACKAGE TOP VIEW • D01 [ 1 ° D 02[ 2 D 03[ 3 8-Bit Array Structure Suited for
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SN74S1056
SDLS019
D3492,
-SDLS019
switching diode 16 array
diode d07
ScansUX7
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in823
Abstract: IN821 DIODE D 92 02 78.P
Text: S E M I T R O N I N D U S T R I E S LTD IN82I-82 M3E T> ñiaTññT DOGGlbT ñ • SLCB SERIES Zener Reference Diodes 6V2 and 6V55 Volts Temperature Compensated APPLICATIONS ■ Semitron's ‘ZR’ range of silicon voltage references are designed and tested to provide an economical and stable
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IN82I-82
400mW,
75KHz
ab00/3
DO-35
DO-41
DO-15
DO-201AD
in823
IN821
DIODE D 92 02 78.P
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Untitled
Abstract: No abstract text available
Text: SEMITRON INDUSTRIES LTD M3E T> 013700^ G00G173 T Œ S L C B - n -i SERI ES Zener Reference Diode 11V7 Volts Temperature Compensated FEATURES GLASS D07 • Hermetically sealed ■ DC power dissipation 500mW at 25°C FIG. 1 MECHANICAL DATA ■ Case: Hermetically sealed glass case D07
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OCR Scan
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G00G173
500mW
DO-35
DO-41
DO-15
DO-201AD
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IN939
Abstract: No abstract text available
Text: SEMITRON INDUSTRIES LTD 43E D B 013700^ 0000171 b BISLCB IN935-940B s e r i e s Zener Reference Diode 9V0 Volt Temperature Compensated APPLICATIONS • The ZR range are designed for operation at a specified current from 2 - 1 5 mA. It is recommended that Iz is held
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OCR Scan
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IN935-940B
400mW,
75KHz
150nV
DO-35
DO-41
DO-15
DO-201AD
IN939
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Koep Precision Standards
Abstract: PRD7505LN PRD2000 PRD2010 PRD600 PRD7500 PRD7505 PRD7510 PRD7520 D0DD22
Text: _ 5 2 4 5 2 79 K O E P P R E C I S I O N S T A N D A R D S ~7Ë ^^524527=1 OOOOSH'ì T f 72C 00229 D 7"*- t<- 6 ? “ - VOLTAGE REFERENCE I I P ¡P H E O S I K D K I NEW-TECH STANDARDS Is, IM C o P R D S E R I E FOR REAL-WORLD USE DIO D ES S
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524527e!
D0DD22,
D2010
PRD7520
PRD2020
PRD7530
PRD2030
PRD605
PRD7540
PRD2040
Koep Precision Standards
PRD7505LN
PRD2000
PRD2010
PRD600
PRD7500
PRD7505
PRD7510
D0DD22
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IN750
Abstract: 1N239 1N47A IN4858 1N236 1N701 649-1 diode 1N665 1N236 diode DIODE 1N649
Text: Zener Type No. Zener Volt age 3t 1ZT @ mA Volts Zener Voltage Tolerance Max. Zener Impedance @ Ur Ohms S u ffix A 0 .2 0 Device Package 150m w Case A 8 1 N 2 2 5 ÎD 1N 2 2 6 il ) 1N 2 27 (1 ) 7 .5 • 1 0 .0 9 .0 • 12 .0 1 1 .0 • 14 .5 1N 228H ) 1N 229
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PDF
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1N2250)
1N226I1)
1N227
150mw
1N228C)
1N229C)
1N2301D
1N231C)
1N2320
1N233
IN750
1N239
1N47A
IN4858
1N236
1N701
649-1 diode
1N665
1N236 diode
DIODE 1N649
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1N4868
Abstract: 1N233 zener diode 1N429 1N239 1N471 IN753 IN4858 IN4868 diode JAN1N486B 1N47A
Text: Zener Volt age Zener Type No. 3t 1ZT @ mA Volts S u f f ix A 0 .2 0 MICROSEMI Zener Voltage Tolerance Max. Zener Impedance @ Ur Ohms Power Rating Device Package 150m w C a s e A 8 1 N 2 2 5 ÎD 1N 2 2 6 il ) 1 N 2 2 7 (1 ) 7 .5 • 1 0 .0 9 .0 • 1 2 .0
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OCR Scan
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PDF
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1N2250)
1N226I1)
1N227
150mw
1N228C)
1N229C)
1N2301D
1N231C)
1N2320
1N233
1N4868
1N233
zener diode 1N429
1N239
1N471
IN753
IN4858
IN4868 diode
JAN1N486B
1N47A
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1N60S2
Abstract: lna 382 GLA100 GLA28 LNA3100 LNA328 diode zener ZL 20
Text: 1775470 C O D I SEMICONDUCTOR INC 10 ll i 77S470 0Û00S73 D 1 T “ ^ / ~ // _ - LOW NOISE AVALANCHE DIODES LNA328 thru LNA3100 GLA28 thru GLA100 CODI Semiconductor, Inc. in »♦« lit De | 90D 0 0 5 7 3 LOW NOISE LOW VOLTAGE AVALANCHE DIODES
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PDF
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177S470
0D0GS73
LNA328LNA3ioo
GLA28
GLA100
1N60S2
lna 382
GLA100
LNA3100
LNA328
diode zener ZL 20
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CI 3060 elsys
Abstract: mav55 ECG592 1N416C microwave diode ecg 588 ci 3060 DIODE Z54 Z11A 1N415C diode Z6 DIODE
Text: M icrowave Mixer Diodes Type No. Test Freq. MHz Noise Figure (dB) I.F. IM PED. Q 30 MHz (Ohms) VSW R Max. Ratio Burn Out (ERGS) Fig. No. 1N415C 9375 9.5 325-475 1.5 2.0 Z64 1N415E 9375 7.5 335-465 1.3 2.0 Z64 1N416C 3060 8.3 300-700 . 2.0 Z64 1N416E 3060
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1N415C
1N415E
1N416C
1N416E
ECG553
ECGG66A
ECG580
ECG615A
Z13-2
ECG615A
CI 3060 elsys
mav55
ECG592
1N416C microwave
diode ecg 588
ci 3060
DIODE Z54
Z11A
1N415C diode
Z6 DIODE
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s1052 3 300
Abstract: SN74S1050 SN74S1052 display texas
Text: SN74S1050 12-BIT SCHOTTKY BARRIER DIODE BUS TERMINATION ARRAY SD LS015A D 3 2 2 8 . J U L Y 1 9 8 9 -H E V IS E D M A R C H 1 9 9 0 D O R N PACKAGE Designed to Reduce Reflection Noise TOP VIEW* Repetitive Peak Forward Current . . . 200 mA D01 g D02 : 2 D03 c 3
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PDF
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SN74S1050
12-BIT
SDLS015A
D3228.
1989-HEVISED
MIL-STD-883C,
300-mil
s1052 3 300
SN74S1050
SN74S1052
display texas
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