vishay semiconductor sot23 marking
Abstract: marking KA6
Text: BAS16 Vishay Semiconductors Fast Switching Diode Features D Silicon Epitaxial Planar Diode D Ultra fast switching speed D Surface mount package ideally suited for automatic insertion D High conductance 94 8550 Order Instruction Type BAS16 Type Differentiation
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BAS16
BAS16
15ges
D-74025
13-Feb-01
vishay semiconductor sot23 marking
marking KA6
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Untitled
Abstract: No abstract text available
Text: BAS16 Vishay Telefunken Fast Switching Diode Features D Silicon Epitaxial Planar Diode D Ultra fast switching speed D Surface mount package ideally suited for automatic insertion D High conductance 94 8550 Order Instruction Type BAS16 Type Differentiation
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BAS16
BAS16â
D-74025
13-Feb-01
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BAS16-GS08
Abstract: BAS16
Text: BAS16 Vishay Telefunken Fast Switching Diode Features D Silicon Epitaxial Planar Diode D Ultra fast switching speed D Surface mount package ideally suited for automatic insertion D High conductance 94 8550 Order Instruction Type BAS16 Type Differentiation
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BAS16
BAS16
D-74025
13-Feb-01
BAS16-GS08
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1N4154
Abstract: LS4154
Text: LS4154 Vishay Telefunken Fast Switching Diode Features D Silicon Epitaxial Planar Diode D Electrical data identical with the device 1N4154 D Quadro Melf package 96 12009 Applications Extreme fast switches Order Instruction Type LS4154 Type Differentiation
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LS4154
1N4154
LS4154
D-74025
15-Feb-01
1N4154
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1N4151
Abstract: LS4151
Text: LS4151 Vishay Semiconductors Fast Switching Diode Features D Silicon Epitaxial Planar Diode D Electrical data identical with the device 1N4151 D Quadro Melf package 96 12009 Applications Extreme fast switches Order Instruction Type LS4151 Type Differentiation
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LS4151
1N4151
LS4151
D-74025
15-Feb-01
1N4151
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1N4154
Abstract: LS4154
Text: LS4154 Vishay Semiconductors Fast Switching Diode Features D Silicon Epitaxial Planar Diode D Electrical data identical with the device 1N4154 D Quadro Melf package 96 12009 Applications Extreme fast switches Order Instruction Type LS4154 Type Differentiation
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PDF
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LS4154
1N4154
LS4154
D-74025
15-Feb-01
1N4154
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1N4151
Abstract: LS4151
Text: LS4151 Vishay Telefunken Fast Switching Diode Features D Silicon Epitaxial Planar Diode D Electrical data identical with the device 1N4151 D Quadro Melf package 96 12009 Applications Extreme fast switches Order Instruction Type LS4151 Type Differentiation
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LS4151
1N4151
LS4151
D-74025
15-Feb-01
1N4151
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1N4151
Abstract: MCL4151
Text: MCL4151 Vishay Telefunken Fast Switching Diode Fast Switching Diode Features D Silicon Epitaxial Planar Diodes D Electrical data identical with the device 1N4151 D Micro Melf package Applications 96 12315 Extreme fast switches Order Instruction Type MCL4151
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MCL4151
1N4151
MCL4151
D-74025
25-Jun-01
1N4151
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BB824
Abstract: No abstract text available
Text: BB824 Vishay Semiconductors Dual Varicap Diode Features D Silicon Epitaxial Planar Diode D Common cathode D High capacitance ratio Applications Tuning of separate resonant circuits, push–pull circuits in FM range, for car radios 94 8550 Order Instruction
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BB824
BB824
D-74025
15-Feb-01
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BAW27
Abstract: VR60
Text: BAW27 Vishay Telefunken Switching Diode Features D Silicon Epitaxial Planar Diode D Low forward voltage drop D High forward current capability Applications High speed switch and general purpose use in computer and industrial applications 94 9367 Order Instruction
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BAW27
BAW27
D-74025
14-Feb-01
VR60
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BAW27
Abstract: No abstract text available
Text: BAW27 Vishay Semiconductors Switching Diode Features D Silicon Epitaxial Planar Diode D Low forward voltage drop D High forward current capability Applications High speed switch and general purpose use in computer and industrial applications 94 9367 Order Instruction
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BAW27
BAW27
D-74025
14-Feb-01
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Untitled
Abstract: No abstract text available
Text: BB824 Vishay Telefunken Dual Varicap Diode Features D Silicon Epitaxial Planar Diode D Common cathode D High capacitance ratio Applications Tuning of separate resonant circuits, push–pull circuits in FM range, for car radios 94 8550 Order Instruction Type
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BB824
BB824â
D-74025
15-Feb-01
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Untitled
Abstract: No abstract text available
Text: 1N4150 Vishay Telefunken Fast Switching Diode Features D Silicon Epitaxial Planar Diode D Low forward voltage drop D High forward current capability Applications High speed switch and general purpose use in computer and industrial applications 94 9367 Order Instruction
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1N4150
1N4150â
D-74025
12-Feb-01
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1N4150
Abstract: LS4150 1n4150 vishay
Text: LS4150 Vishay Semiconductors Fast Switching Diode Features D Silicon Epitaxial Planar Diode D Electrical data identical with the device 1N4150 D Quadro Melf package Applications 96 12009 High speed switch and general purpose use in computer and industrial applications
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Original
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PDF
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LS4150
1N4150
LS4150
D-74025
15-Feb-01
1N4150
1n4150 vishay
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1N4150
Abstract: LS4150
Text: LS4150 Vishay Telefunken Fast Switching Diode Features D Silicon Epitaxial Planar Diode D Electrical data identical with the device 1N4150 D Quadro Melf package Applications 96 12009 High speed switch and general purpose use in computer and industrial applications
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Original
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PDF
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LS4150
1N4150
LS4150
D-74025
15-Feb-01
1N4150
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BB824
Abstract: No abstract text available
Text: BB824 Vishay Telefunken Dual Varicap Diode Features D Silicon Epitaxial Planar Diode D Common cathode D High capacitance ratio Applications Tuning of separate resonant circuits, push–pull circuits in FM range, for car radios 94 8550 Order Instruction Type
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Original
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BB824
BB824
D-74025
15-Feb-01
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25-12io8
Abstract: MDC 1200 DIODE mdc 40-14 MCO 1510 MCd 25-04 ABB thyristor modules ASEA thyristor mdc 55-04 hs 50 abb E72873
Text: A S E A BROUN/ABB SEMICON A3 Netz-Thyristor-Diode-Module d " | □ □ 4 0 3 0 Û O O O D l l ] ^ t~ r-Z5-Z3 Phase control Thyristor-Diode-Modules Daten pro Diode oder Thyristor/data per diode or thyristor/les caractéristiques se rapportent à 1 diode ou à 1 thyristor
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K21-0120
K21-01S0
K21-0180
K21-0265
K41-0150C
25-12io8
MDC 1200
DIODE mdc 40-14
MCO 1510
MCd 25-04
ABB thyristor modules
ASEA thyristor
mdc 55-04
hs 50 abb
E72873
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Untitled
Abstract: No abstract text available
Text: A S E A BROUN/ABB SEMICON A3 Netz-Thyristor-Diode-M odule d " | □ □ 4 0 3 0 Û O O O D l l ] ^ t~ r-Z 5 -Z 3 Phase control Thyristor-Diode-M odules Daten pro Diode oder Thyristor/data per diode or thyristor/les caractéristiques se rapportent à 1 diode ou à 1 thyristor
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Diode smd code PJ 04
Abstract: diode SMD MARKING CODE A6 smd diode code pj smd diode marking a6 BAS16W smd diode code a6 marking code a6 smd diode marking code a6 smd diode Lf smd marking code pJ
Text: N AMER P H ILIP S /D IS C R E T E bTE bbSBTBl GOSb^Sb 547 D Philips Semiconductors Product specification Silicon planar epitaxial high-speed diode FEATURES • Plastic SMD envelope • High switching speed BAS16W QUICK REFERENCE DATA SYMBOL Epitaxial high-speed switching diode
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bbS3131
BAS16W
OT323
Diode smd code PJ 04
diode SMD MARKING CODE A6
smd diode code pj
smd diode marking a6
BAS16W
smd diode code a6
marking code a6
smd diode marking code a6
smd diode Lf
smd marking code pJ
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diode 1n4007
Abstract: 1N4007 diodes 1n4007 FAH diode diode,1N4007 Diode -1N4007 1a 1000v 47146 I-26366 DIODE1N4007
Text: Diode Plugs D LS 2 DLS 2 for SAKR-D for SAKR-D WSD 2.5 WTR 2.5 D DQS 2 for 6mm-wide terminus mm SAKR-D SAKR-D WTR 2.5 D JB ^ with diode plug with test sockets m p Term, width +.2 assy. tol. mm Insulation stripping length mm C onnection data Screw connection, solid
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1N4007
I--------26366
1N4007,
1N4007
diode 1n4007
diodes 1n4007
FAH diode
diode,1N4007
Diode -1N4007
1a 1000v
47146
I-26366
DIODE1N4007
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IN34A
Abstract: 1N60C IN82A IN67A in69a IN56A 1n62 diode IN34 diode 1N142 diode diode IN97
Text: Iñ DE I b l E E m ? ? D D 0 D D 7 D 4 612 24 77 MICR OWA VE DIODE CORP 18C 0 0 0 7 0 D T - Of ón CROWAVE DIODE CORPORATION . GERMANIUM DIODES r . J r JN34 1N34 4AS A IN3 1 N 3 5 IN38 1N38A 1 N3 1N 4SB 8 1 1N N5 510 1 1N N5S2 2A 1 1N N5 54 4A 1N56 IN5 6 A
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DEiblE2477
1N34A
IN34AS
1N38A
1N52A
1N54A
IN56A
1N5836A
1N127
1N127A
IN34A
1N60C
IN82A
IN67A
in69a
1n62 diode
IN34 diode
1N142 diode
diode IN97
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ndl3200a
Abstract: NDL3200
Text: b4S?S2S 0D37MS0 SS2 • N E C E bEE D N E C LASER DIODE ELECTRONICS INC N D L 3 2 0 0 A 670 nm POINTER APPLICATION AIGalnP DOUBLE HETEROSTRUCTURE VISIBLE LASER DIODE D E SC R IPTIO N N D L 3 2 0 0 A is an A IG a lnP 6 7 0 nm visible laser diode and especially developed fo r Pointer.
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0D37MS0
I-1209)
NDL3200A
b457S2S
0G37U52
ndl3200a
NDL3200
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037570 DIODE
Abstract: No abstract text available
Text: bEE D m bl4275E5 OOaTSb'] SÛT HNECE N E C ELECTRONICS INC LASER DIODE / N D L5650D 1 5 5 0 nm OPTICAL FIBER C O M M U N IC A T IO N S InGaAsP PHASE-SHIFTED DFB-DC-PBH LASER DIODE DE SC RIPTIO N N D L 5 6 5 0 D is a 1 550 nm DFB D istrib u te d Feed-back laser diode c hip on carrier w ith rib b o n lead.
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bl4275E5
L5650D
037570 DIODE
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nec 16f
Abstract: 16F NEC "12f" zener diode NEC 12F RD2.0F 12F NEC RD30F nec zener diode zener uz series
Text: NEC 1W ZENER DIODE HfCTMN KVKX N EC RD2.0F ~ RD82F Type RD TJ F Series are DHD D ouble Heatsink Diode Construction planar type zener diodes possessing an allowable power dissipation o f 1 w att. ¿0 8 ( F C a th o d e indication FEATURES • D H D (D ouble Heatsink D iode) C onstruction
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RD82F
--RD82F
nec 16f
16F NEC
"12f" zener diode
NEC 12F
RD2.0F
12F NEC
RD30F
nec zener diode
zener uz series
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