Untitled
Abstract: No abstract text available
Text: APTGL475U120DAG Single switch with Series diode Trench + Field Stop IGBT4 VCES = 1200V IC = 475A @ Tc = 100°C EK E C G CK Application • Zero Current Switching resonant mode Features • Trench + Field Stop IGBT 4 Technology - Low voltage drop - Low leakage current
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APTGL475U120DAG
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APT0502
Abstract: APT0601
Text: APTGL475U120DAG Single switch with Series diode Trench + Field Stop IGBT4 VCES = 1200V IC = 475A @ Tc = 100°C EK E C G CK Application • Zero Current Switching resonant mode Features • Trench + Field Stop IGBT 4 Technology - Low voltage drop - Low leakage current
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APTGL475U120DAG
APT0502
APT0601
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Untitled
Abstract: No abstract text available
Text: APTGL475U120DAG Single switch with Series diode Trench + Field Stop IGBT4 EK E C G CK VCES = 1200V IC = 475A @ Tc = 100°C Application • Zero Current Switching resonant mode Features Trench + Field Stop IGBT 4 Technology - Low voltage drop - Low leakage current
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APTGL475U120DAG
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1200JXH23
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE 1200JXH23 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 1200JXH23 Unit in mm HIGH SPEED RECTIFIER APPLICATIONS • • • 2 - ¿3.5 ± 0.2 depth 2.1 ±0.4 Repetitive Peak Reverse Voltage : V rrm —6000V Average Forward Current : Ijr AV = 1200A
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1200JXH23
1200JXH23
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE 1200JXH23 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 1200JXH23 HIGH SPEED RECTIFIER APPLICATIONS • • • Repetitive Peak Reverse Voltage : V rrm = 6000V Average Forward Current : Ijr AV = 1200A Double Side Cooling M A X IM U M RATING
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1200JXH23
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toshiba gto
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE 1200GXHH25 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 1 2 0 0 G X H H25 Unit in mm HIGH SPEED RECTIFIER APPLICATIONS • • • Repetitive Peak Reverse Voltage : Vrrm —4500V Average Forward Current : Ijr AV = 1200A Double Side Cooling
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1200GXHH25
--4500V
961001EAA1
--2500A,
toshiba gto
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toshiba gto
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE 1200GXHH23 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 1 2 0 0 G X H H23 HIGH SPEED RECTIFIER APPLICATIONS • • • Repetitive Peak Reverse Voltage : Vrrm = 4500V Average Forward Current : Ijr AV = 1200A Double Side Cooling MAXIMUM RATINGS
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1200GXHH23
961001EAA1
toshiba gto
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE 1200GXHH24 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 1 2 0 0 G X H H24 HIGH SPEED RECTIFIER APPLICATIONS • • • Repetitive Peak Reverse Voltage : Vrrm = 4500V Average Forward Current : Ijr AV = 1200A Double Side Cooling MAXIMUM RATINGS
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1200GXHH24
961001EAA1
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8k83
Abstract: diode 6.L
Text: F 1200A . F 1200G .3 Axial leaded diode High efficiency fast silicion rectifier diode F 1200A . F 1200G Forward Current: 12 A Reverse Voltage: 50 to 400 V Preliminary Data Features < = 4
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1200G
1200G
8k83
diode 6.L
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TFC561D
Abstract: No abstract text available
Text: TO-220S Thyristor with built-in reverse diode for HID lamp ignition TFC561D • Features External Dimensions Unit: mm 10.2± 0.3 4.44± 0.2 (1.4) ●Repetitive peak off-state voltage: VDRM=600V 1.3± 0.2 11.3± 0.5 ●Critical rate-of-rise of on-state current: di/dt=1200A /µs
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O-220S
TFC561D
TFC561D
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE 1200JXH23 TOSHIBA FAST RECOVERY DIODE 1 2 Q Q J SILICON DIFFUSED TYPE X H 2 3 Unit in mm HIGH SPEED RECTIFIER APPLICATIONS 5 ± 0.2 • • • Repetitive Peak Reverse Voltage : V r r m = 6000V Average Forward Current : Ip AV = 1200A Double Side Cooling
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1200JXH23
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TFC561D
Abstract: TO-220S
Text: TO-220S Thyristor with built-in reverse diode for HID lamp ignition TFC561D • Features External Dimensions Unit: mm 10.2± 0.3 4.44± 0.2 (1.4) ●Repetitive peak off-state voltage: VDRM=600V 1.3± 0.2 11.3± 0.5 ●Critical rate-of-rise of on-state current: di/dt=1200A /µs
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O-220S
TFC561D
TFC561D
TO-220S
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Untitled
Abstract: No abstract text available
Text: NTE5930 & NTE5931 Silicon Power Rectifier Diode, 70 Amp, DO5 Description: The NTE5930 and NTE5931 are silicon power rectifier diodes in a DO5 type package designed with very low leakage current as well as good surge handling capability. These devices are ideal for a
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NTE5930
NTE5931
NTE5930
NTE5931
NTE5930,
NTE5931*
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NTE5930
Abstract: NTE5931 NTE59
Text: NTE5930 & NTE5931 Silicon Power Rectifier Diode, 70 Amp Description: The NTE5930 and NTE5931 are silicon power rectifier diodes in a DO5 type package designed with very low leakage current as well as good surge handling capability. These devices are ideal for a
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NTE5930
NTE5931
NTE5930
NTE5931
NTE5930,
NTE5931*
NTE59
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Untitled
Abstract: No abstract text available
Text: Thyristor with built-in reverse diode for HID lamp ignition TFC561D External Dimensions unit: mm 4.44±0.2 (1.4) 1.3±0.2 11.3±0.5 8.6±0.3 10.2±0.3 +0.3 ● Repetitive peak off-state voltage: VDRM=600V ● Repetitive peak surge on-state current: ITRM=430A
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TFC561D
00A/div
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Untitled
Abstract: No abstract text available
Text: APTM100UM45DAG Single switch with Series diode MOSFET Power Module SK S D G DK S VDSS = 1000V RDSon = 45m typ @ Tj = 25°C ID = 215A @ Tc = 25°C Application • Zero Current Switching resonant mode Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance
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APTM100UM45DAG
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Untitled
Abstract: No abstract text available
Text: APTM100UM45DAG Single switch with Series diode MOSFET Power Module SK VDSS = 1000V RDSon = 45mΩ typ @ Tj = 25°C ID = 215A @ Tc = 25°C Application S D G DK S Zero Current Switching resonant mode Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance
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APTM100UM45DAG
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Untitled
Abstract: No abstract text available
Text: APTM100UM45DAG Single switch with Series diode MOSFET Power Module SK S D G DK VDSS = 1000V RDSon = 45mΩ typ @ Tj = 25°C ID = 215A @ Tc = 25°C Application • Zero Current Switching resonant mode Features Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance
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APTM100UM45DAG
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APT0502
Abstract: APT0601 APTM100UM45DAG
Text: APTM100UM45DAG VDSS = 1000V RDSon = 45mΩ typ @ Tj = 25°C ID = 215A @ Tc = 25°C Single switch with Series diode MOSFET Power Module SK S D G DK S DK Application • Zero Current Switching resonant mode Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance
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APTM100UM45DAG
APT0502
APT0601
APTM100UM45DAG
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI HIGH VOLTAGE DIODE MODULE RM1200HE-66S HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Module RM1200HE-66S ● IF . 1200A ● VRRM . 3300V
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RM1200HE-66S
20K/kW
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rm1200h
Abstract: rm1200he-66s
Text: MITSUBISHI HIGH VOLTAGE DIODE MODULE RM1200HE-66S HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Module RM1200HE-66S ● IF . 1200A ● VRRM . 3300V
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RM1200HE-66S
20K/kW
rm1200h
rm1200he-66s
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI HIGH VOLTAGE DIODE MODULE RM1200DB-66S HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Module RM1200DB-66S ● IF . 1200A ● VRRM . 3300V
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RM1200DB-66S
18K/kW
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI HIGH VOLTAGE DIODE MODULE RM1200DB-34S HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Module RM1200DB-34S ● IF . 1200A ● VRRM . 1700V
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RM1200DB-34S
20K/kW
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RM1200DG
Abstract: No abstract text available
Text: MITSUBISHI HIGH VOLTAGE DIODE MODULE RM1200DG-66S HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Module RM1200DG-66S ● IF . 1200A ● VRRM . 3300V
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RM1200DG-66S
18K/kW
RM1200DG
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