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    1200G Search Results

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    1200G Price and Stock

    Vishay Beyschlag CMB02070X1200GB200

    RES SMD 120 OHM 2% 1W 0207
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    DigiKey CMB02070X1200GB200 Cut Tape 50,080 1
    • 1 $1.01
    • 10 $0.582
    • 100 $0.3519
    • 1000 $0.22624
    • 10000 $0.22624
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    CMB02070X1200GB200 Digi-Reel 50,080 1
    • 1 $1.01
    • 10 $0.582
    • 100 $0.3519
    • 1000 $0.22624
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    CMB02070X1200GB200 Reel 48,000 2,000
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    • 10000 $0.1875
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    Comchip Technology Corporation Ltd CDBDSC51200-G

    DIODE SIL CARBIDE 1.2KV 18A DPAK
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    DigiKey CDBDSC51200-G Tube 411 1
    • 1 $8.32
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    NAC CDBDSC51200-G 80 1
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    Comchip Technology Corporation Ltd CDBD2SC21200-G

    DIODE SIL CARB 1.2KV 6.2A TO263
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    DigiKey CDBD2SC21200-G Tube 381 1
    • 1 $4.3
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    NAC CDBD2SC21200-G Tube 50 1
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    onsemi BYW51-200G

    DIODE ARRAY GP 200V 8A TO-220
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    DigiKey BYW51-200G Tube 359 1
    • 1 $2.47
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    Mouser Electronics BYW51-200G 5,856
    • 1 $2.05
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    Newark BYW51-200G Bulk 587 1
    • 1 $1.99
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    Richardson RFPD BYW51-200G 1,200
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    Avnet Asia BYW51-200G 9 Weeks 900
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    Chip-Germany GmbH BYW51-200G 109
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    EBV Elektronik BYW51-200G 100 11 Weeks 50
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    New Advantage Corporation BYW51-200G 650 1
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    Vishay Dale RLR07C1200GSB1423

    RES 120 OHM 2% 1/4W AXIAL
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    DigiKey RLR07C1200GSB1423 Bulk 337 1
    • 1 $3.69
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    Find more 1200G price and stock on Findchips.com

    1200G Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1200GXHH22 Toshiba FAST RECOVERY RECTIFIER (HIGH SPEED RECTIFIER APPLICATIONS) Scan PDF
    1200GXHH22 Toshiba FAST RECOVERY RECTIFIER Scan PDF

    1200G Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 3300 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G330100 Doc. No. 5SYA1563-00 Apr.06 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • High insulation package • High power density • AlSiC base-plate for high power


    Original     		1200G330100 5SYA1563-00 CH-5600 PDF

    DO-204AC

    Abstract: GI1-1200GP GI1-1400GP GI1-1600GP
    Text: GI1-1200GP thru GI1-1600GP Vishay Semiconductors New Product formerly General Semiconductor Miniature High Voltage Glass Passivated Rectifier DO-204AC DO-15 Features 0.034 (0.86) 0.028 (0.71) Dia. * d e t n e t a P 1.0 (25.4) min. 0.300 (7.6) 0.230 (5.8)


    Original     		GI1-1200GP GI1-1600GP DO-204AC DO-15) MIL-S-19500 08-Apr-05 DO-204AC GI1-1400GP GI1-1600GP PDF

    DO-204AC

    Abstract: GI1-1200GP GI1-1600GP JESD22-B102 J-STD-002
    Text: GI1-1200GP thru GI1-1600GP Vishay General Semiconductor Miniature High Voltage Glass Passivated Rectifier FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction d* e t n e Pat • Low forward voltage drop


    Original     		GI1-1200GP GI1-1600GP DO-204AC DO-15) MIL-S-19500 2002/95/EC 2002/96/EC 18-Jul-08 DO-204AC GI1-1600GP JESD22-B102 J-STD-002 PDF

    8k83

    Abstract: diode 6.L
    Text: F 1200A . F 1200G .3 Axial leaded diode High efficiency fast silicion rectifier diode F 1200A . F 1200G Forward Current: 12 A Reverse Voltage: 50 to 400 V Preliminary Data Features                 <  =  4


    Original     		1200G 1200G 8k83 diode 6.L PDF

    5SNA1200G450300

    Abstract: 1200G450300 cosmi
    Text: VCE IC = = 4500 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G450300 PRELIMINARY Doc. No. 5SYA 1401-00 Dec 08 • Ultra low-loss, rugged SPT+ chip-set • Smooth switching SPT+ chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power


    Original     		1200G450300 CH-5600 5SNA1200G450300 1200G450300 cosmi PDF

    IC 7400 configuration

    Abstract: 5SNA1200G450300
    Text: VCE IC = = 4500 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G450300 Doc. No. 5SYA 1401-01 Mar 09 • Ultra low-loss, rugged SPT+ chip-set • Smooth switching SPT+ chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power


    Original     		1200G450300 CH-5600 IC 7400 configuration 5SNA1200G450300 PDF

    1200G450350

    Abstract: 5SNA1200G450350
    Text: VCE IC = = 4500 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G450350 Doc. No. 5SYA 1415-02 04-2012 Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC Industry standard package High power density AlSiC base-plate for high power cycling capability


    Original     		1200G450350 CH-5600 1200G450350 5SNA1200G450350 PDF

    Untitled

    Abstract: No abstract text available
    Text: Coaxial Broadband Amplifier 50Ω Variable Gain ZFL-1200G+ 10 to 1200 MHz Features • wideband, 10 to 1200 MHz • rugged, shielded case • gain control range: 60 dB typ. • gain control voltage: 0 to +5V CASE STYLE: Y39 Connectors Model SMA ZFL-1200G+


    Original     		ZFL-1200G+ 2002/95/EC) PDF

    GI1-1600GP

    Abstract: No abstract text available
    Text: GI1-1200GP thru GI1-1600GP Vishay General Semiconductor Miniature High Voltage Glass Passivated Rectifier FEATURES • Superectifier application SUPERECTIFIER structure for high reliability • Cavity-free glass-passivated junction • Low forward voltage drop


    Original     		GI1-1200GP GI1-1600GP MIL-S-19500 22-B106 AEC-Q101 2002/95/EC 2002/96/EC DO-204AC DO-15) 2011/65/EU GI1-1600GP PDF

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 4500 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G450350 Doc. No. 5SYA 1415-03 01-2014 • Ultra low-loss, rugged SPT+ chip-set  Smooth switching SPT+ chip-set for good EMC  Industry standard package  High power density  AlSiC base-plate for high power


    Original     		1200G450350 CH-5600 PDF

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 3300 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G330100 Doc. No. 5SYA1563-03 01-2014 • Low-loss, rugged SPT chip-set  Smooth switching SPT chip-set for good EMC  High insulation package  High power density  AlSiC base-plate for high power cycling


    Original     		1200G330100 5SYA1563-03 UL1557, E196689 CH-5600 PDF

    GI1-1600GP

    Abstract: DO-204AC GI1-1200GP J-STD-002
    Text: GI1-1200GP thru GI1-1600GP Vishay General Semiconductor Miniature High Voltage Glass Passivated Rectifier FEATURES • Superectifier application SUPERECTIFIER structure for high reliability • Cavity-free glass-passivated junction • Low forward voltage drop


    Original     		GI1-1200GP GI1-1600GP MIL-S-19500 22-B106 DO-204AC DO-15) AEC-Q101 2002/95/EC 2002/96/EC 11-Mar-11 GI1-1600GP DO-204AC J-STD-002 PDF

    1200G330100

    Abstract: No abstract text available
    Text: VCE IC = = 3300 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G330100 Doc. No. 5SYA1563-01 04-2012 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC High insulation package High power density AlSiC base-plate for high power cycling capability


    Original     		1200G330100 5SYA1563-01 CH-5600 1200G330100 PDF

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 4500 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G450350 Doc. No. 5SYA 1415-03 01-2014 •     Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC Industry standard package High power density AlSiC base-plate for high power cycling


    Original     		1200G450350 UL1557, E196689 CH-5600 PDF

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 4500 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G450300 Doc. No. 5SYA 1401-03 04-2012 Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC Industry standard package High power density AlSiC base-plate for high power cycling capability


    Original     		1200G450300 CH-5600 PDF

    5SNA1200G330100

    Abstract: 1200G330100
    Text: VCE IC = = 3300 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G330100 PRELIMINARY Doc. No. 5SYA 1563-00 Feb.05 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • High insulation package • High power density • AlSiC base-plate for high power


    Original     		1200G330100 IF30100 CH-5600 5SNA1200G330100 1200G330100 PDF

    Untitled

    Abstract: No abstract text available
    Text: Drawing Number – WD5 Outline Number – 100A361 Weight 1200g Westcode Customer Services email: wsl.sales@westcode.com Telephone: +44 0 1249 444524 Fax: +44 (0)1249 659448


    Original     		100A361 1200g PDF

    Untitled

    Abstract: No abstract text available
    Text: Drawing Number – W42 Outline Number – 100A310 Weight 1200g Westcode Customer Services email: wsl.sales@westcode.com Telephone: +44 0 1249 444524 Fax: +44 (0)1249 659448


    Original     		100A310 1200g PDF

    Untitled

    Abstract: No abstract text available
    Text: Drawing Number – W44 Outline Number – 101A340 Weight 1200g Westcode Customer Services email: wsl.sales@westcode.com Telephone: +44 0 1249 444524 Fax: +44 (0)1249 659448


    Original     		101A340 1200g PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA SILICON DIFFUSED TYPE 1200GXHH22 High Speed Rectifier Applications • Repetitive Peak Reverse Voltage: VRRM=4500V • Average Forward Current: lF AV =1200A • Double Side Cooling Maximum Ratings CHARACTERISTIC SYMBOL RATINGS UNIT Repetitive Peak Reverse Voltage


    OCR Scan     		1200GXHH22 1300g PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE 1200GXHH24 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 1 2 0 0 G X H H24 HIGH SPEED RECTIFIER APPLICATIONS • • • Repetitive Peak Reverse Voltage : Vrrm = 4500V Average Forward Current : Ijr AV = 1200A Double Side Cooling MAXIMUM RATINGS


    OCR Scan     		1200GXHH24 961001EAA1 PDF

    toshiba gto

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE 1200GXHH25 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 1 2 0 0 G X H H25 Unit in mm HIGH SPEED RECTIFIER APPLICATIONS • • • Repetitive Peak Reverse Voltage : Vrrm —4500V Average Forward Current : Ijr AV = 1200A Double Side Cooling


    OCR Scan     		1200GXHH25 --4500V 961001EAA1 --2500A, toshiba gto PDF

    toshiba gto

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE 1200GXHH23 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 1 2 0 0 G X H H23 HIGH SPEED RECTIFIER APPLICATIONS • • • Repetitive Peak Reverse Voltage : Vrrm = 4500V Average Forward Current : Ijr AV = 1200A Double Side Cooling MAXIMUM RATINGS


    OCR Scan     		1200GXHH23 961001EAA1 toshiba gto PDF

    1200GXHH22

    Abstract: No abstract text available
    Text: 1200GXHH22 TOSHIBA TOSHIBA FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE 1 2 0 0 G X H H22 HIGH SPEED RECTIFIER APPLICATIONS • • • Repetitive Peak Reverse Voltage : V r r m = 4500 V Average Forward Current : If AV = 1200 A Double Side Cooling MAXIMUM RATINGS


    OCR Scan     		1200GXHH22 200GXH 125-C 1200GXHH22 PDF