GENERAL SEMICONDUCTOR DIODE SMC 400
Abstract: CD214C-B340
Text: PL IA N T Features M • RoHS compliant* *R oH S CO ■ SMC package ■ Surface mount ■ High current capability CD214C-B320 ~ B360 Schottky Barrier Rectifier Chip Diode General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly
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CD214C-B320
DO-214AB
DO-214AB)
GENERAL SEMICONDUCTOR DIODE SMC 400
CD214C-B340
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U840 diode motorola
Abstract: motorola u860 diode DIODE u1560 b2045 aka u1560 DIODE u860 diode u1560 diode U3J U820 diode fast recovery diode ses5001
Text: DL151/D Rev. 3, Nov-2000 Rectifier Device Data Rectifier Device Data DL151/D Rev. 3, Oct–2000 SCILLC, 2000 Previous Edition 1995 “All Rights Reserved’’ This book presents technical data for ON Semiconductor’s broad line of rectifiers. Complete specifications are provided in
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DL151/D
Nov-2000
r14525
U840 diode motorola
motorola u860 diode
DIODE u1560
b2045 aka
u1560 DIODE
u860 diode
u1560
diode U3J
U820 diode
fast recovery diode ses5001
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DIODE B320B
Abstract: B340Q b360
Text: B320 - B360 3.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Product Summary Features and Benefits B320/B330/B340 VRRM V 20/30/40 B350/B360 VRRM (V) 50/60 IO (A) 3.0 IO (A) 3.0 VF max (V) 0.5 IR max (mA) 0.5 VF max (V) 0.7 • Guard Ring Die Construction for Transient Protection
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B320/B330/B340
B350/B360
B340Q-13-F
AEC-Q10nowledge
DS30923
DIODE B320B
B340Q
b360
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Untitled
Abstract: No abstract text available
Text: SiA459EDJ www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) ID (A)a 0.0350 at VGS = - 4.5 V -9 - 20 0.0395 at VGS = - 3.7 V -9 0.0620 at VGS = - 2.5 V -9 Qg (Typ.) 10 nC PowerPAK SC-70-6L-Single
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SiA459EDJ
SC-70-6L-Single
SC-70
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Si3433BDV
Abstract: Si3433BDV-T1-E3 Si3433BDV-T1
Text: Si3433BDV Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.042 @ VGS = −4.5 V −5.6 0.057 @ VGS = −2.5 V −4.8 0.080 @ VGS = −1.8 V −4.1 TSOP-6 Top View 3 mm 1 6 2 5 3 4 (4) S (3) G 2.85 mm (1, 2, 5, 6) D
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Si3433BDV
Si3433BDV-T1
Si3433BDV-T1--E3
S-40575--Rev.
29-Mar-04
Si3433BDV-T1-E3
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Si3495DV
Abstract: No abstract text available
Text: Si3495DV New Product Vishay Siliconix P-Channel 20-V D-S , 1.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) −20 D TrenchFETr Power MOSFET: 1.5-V Rated D Ultra-Low On-Resistance D 100% Rg Tested ID (A) 0.024 @ VGS = −4.5 V −7 0.030 @ VGS = −2.5 V
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Si3495DV
Si3495DV-T1--E3
S-41888--Rev.
18-Oct-04
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Si3433BDV
Abstract: Si3433BDV-T1-E3 Si3433BDV-T1 SI3433B
Text: Si3433BDV Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.042 @ VGS = −4.5 V −5.6 0.057 @ VGS = −2.5 V −4.8 0.080 @ VGS = −1.8 V −4.1 TSOP-6 Top View 3 mm 1 6 2 5 3 4 (4) S (3) G 2.85 mm (1, 2, 5, 6) D
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Si3433BDV
Si3433BDV-T1
Si3433BDV-T1--E3
08-Apr-05
Si3433BDV-T1-E3
SI3433B
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Untitled
Abstract: No abstract text available
Text: Si3499DV New Product Vishay Siliconix P-Channel 1.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −8 rDS(on) (W) ID (A) 0.023 @ VGS = −4.5 V −7 0.029 @ VGS = −2.5 V −6.2 0.036 @ VGS = −1.8 V −5.2 0.048 @ VGS = −1.5 V −5.0 D TrenchFETr Power MOSFET: 1.5-V Rated
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Si3499DV
Si3499DV-T1--E3
18-Oct-04
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SI3433BDV
Abstract: No abstract text available
Text: Si3433BDV Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.042 @ VGS = −4.5 V −5.6 0.057 @ VGS = −2.5 V −4.8 0.080 @ VGS = −1.8 V −4.1 TSOP-6 Top View 3 mm 1 6 2 5 3 4 (4) S (3) G 2.85 mm (1, 2, 5, 6) D
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Si3433BDV
Si3433BDV-T1
Si3433BDV-T1--E3
18-Jul-08
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Si3499DV
Abstract: No abstract text available
Text: Si3499DV New Product Vishay Siliconix P-Channel 1.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −8 rDS(on) (W) ID (A) 0.023 @ VGS = −4.5 V −7 0.029 @ VGS = −2.5 V −6.2 0.036 @ VGS = −1.8 V −5.2 0.048 @ VGS = −1.5 V −5.0 D TrenchFETr Power MOSFET: 1.5-V Rated
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Si3499DV
Si3499DV-T1--E3
08-Apr-05
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SI3495DV
Abstract: No abstract text available
Text: Si3495DV New Product Vishay Siliconix P-Channel 20-V D-S , 1.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) −20 D TrenchFETr Power MOSFET: 1.5-V Rated D Ultra-Low On-Resistance D 100% Rg Tested ID (A) 0.024 @ VGS = −4.5 V −7 0.030 @ VGS = −2.5 V
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Si3495DV
Si3495DV-T1--E3
08-Apr-05
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Si3499DV
Abstract: No abstract text available
Text: Si3499DV New Product Vishay Siliconix P-Channel 1.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −8 rDS(on) (W) ID (A) 0.023 @ VGS = −4.5 V −7 0.029 @ VGS = −2.5 V −6.2 0.036 @ VGS = −1.8 V −5.2 0.048 @ VGS = −1.5 V −5.0 D TrenchFETr Power MOSFET: 1.5-V Rated
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Si3499DV
Si3499DV-T1--E3
18-Jul-08
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Si3433BDV
Abstract: Si3433BDV-T1-E3 Si3433BDV-T1-GE3
Text: Si3433BDV Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.042 at VGS = - 4.5 V - 5.6 0.057 at VGS = - 2.5 V - 4.8 0.080 at VGS = - 1.8 V - 4.1 • Halogen-free According to IEC 61249-2-21 Definition
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Si3433BDV
2002/95/EC
Si3433BDV-T1-E3
Si3433BDV-T1-GE3
18-Jul-08
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SI3433BDV
Abstract: No abstract text available
Text: Si3433BDV Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.042 at VGS = - 4.5 V - 5.6 0.057 at VGS = - 2.5 V - 4.8 0.080 at VGS = - 1.8 V - 4.1 • Halogen-free According to IEC 61249-2-21 Definition
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Si3433BDV
2002/96/EC
Si3433BDV-T1-E3
Si3433BDV-T1-GE3
18-Jul-08
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700S-CF440DJC
Abstract: IEC 947 EN 60947 NEMA P600 allen-bradley safety relay b3y diode MSR9T Diode B2x 700S-CF440 MARKING c1y E14840
Text: Bulletin 700S-CF Bulletin 700S-P Safety Control Relays–The Safe Solution Safety Control Relays Product Profile Designed To Meet Worldwide Safety Standards Bulletin 700S-CF Bulletin 700S-P Rockwell Automation introduces a new category of relays designed to meet the latest and emerging worldwide safety
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700S-CF
700S-P
D-74834
700S-SG001A-EN-E
700S-CF440DJC
IEC 947 EN 60947
NEMA P600
allen-bradley safety relay
b3y diode
MSR9T
Diode B2x
700S-CF440
MARKING c1y
E14840
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marking B32 diode SCHOTTKY
Abstract: marking B34 diode SCHOTTKY marking B33 diode SMC case 403 b34 DIODE schottky marking B32 DIODE B36 marking B3X MARKING B33 SMC diode code b3x
Text: MBRS320T3, MBRS330T3, MBRS340T3, MBRS360T3 Preferred Devices Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRS320T3,
MBRS330T3,
MBRS340T3,
MBRS360T3
marking B32 diode SCHOTTKY
marking B34 diode SCHOTTKY
marking B33 diode
SMC case 403
b34 DIODE schottky
marking B32
DIODE B36
marking B3X
MARKING B33 SMC
diode code b3x
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MBRS340T3G
Abstract: MBRS340T3G marking MBRS320T3G 5M MARKING CODE DIODE SMC MBRS320T3 MBRS330T3 MBRS330T3G MBRS340T3 case 403 SMC 403-03
Text: MBRS320T3, MBRS330T3, MBRS340T3 Surface Mount Schottky Power Rectifier These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRS320T3,
MBRS330T3,
MBRS340T3
MBRS340T3/D
MBRS340T3G
MBRS340T3G marking
MBRS320T3G
5M MARKING CODE DIODE SMC
MBRS320T3
MBRS330T3
MBRS330T3G
MBRS340T3
case 403
SMC 403-03
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K2313
Abstract: No abstract text available
Text: AUGUST’14 ® FINEMET ® is a registered trademark of Hitachi Metals, Ltd. As IT and electronic devices become small and improve its performance, issues of electromagnetic noise are addressed. EMC regulations for those
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jp/e/prod/prod02/prod02
K2313
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marking B32 diode SCHOTTKY
Abstract: marking B34 diode SCHOTTKY MBRS340T3G b34 diodes on semiconductor marking B33 diode b34 DIODE schottky marking B3X Diode 145 B34 marking B32
Text: MBRS320T3, MBRS330T3, MBRS340T3 Preferred Devices Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRS320T3,
MBRS330T3,
MBRS340T3
marking B32 diode SCHOTTKY
marking B34 diode SCHOTTKY
MBRS340T3G
b34 diodes on semiconductor
marking B33 diode
b34 DIODE schottky
marking B3X
Diode 145 B34
marking B32
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MBR360
Abstract: No abstract text available
Text: MBR350, MBR360 MBR360 is a Preferred Device Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap
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MBR350,
MBR360
MBR360
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SI3433BDV-T1
Abstract: SI3433BDV
Text: Si3433BDV Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.042 at VGS = - 4.5 V - 5.6 0.057 at VGS = - 2.5 V - 4.8 0.080 at VGS = - 1.8 V - 4.1 • Halogen-free According to IEC 61249-2-21 Definition
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Si3433BDV
2002/95/EC
Si3433BDV-T1-E3
Si3433BDV-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SI3433BDV-T1
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SI3433BDV
Abstract: No abstract text available
Text: Si3433BDV Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.042 at VGS = - 4.5 V - 5.6 0.057 at VGS = - 2.5 V - 4.8 0.080 at VGS = - 1.8 V - 4.1 • Halogen-free According to IEC 61249-2-21 Definition
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Si3433BDV
2002/95/EC
Si3433BDV-T1-E3
Si3433BDV-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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SI3433BDV
Abstract: No abstract text available
Text: Si3433BDV Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.042 at VGS = - 4.5 V - 5.6 0.057 at VGS = - 2.5 V - 4.8 0.080 at VGS = - 1.8 V - 4.1 • Halogen-free According to IEC 61249-2-21 Definition
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Si3433BDV
2002/95/EC
Si3433BDV-T1-E3
Si3433BDV-T1-GE3
11-Mar-11
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marking code onsemi Diode B34
Abstract: b34 DIODE schottky SMC 403-03 MBRS340T3 b34 diode diode marking b34 marking B34 diode SCHOTTKY DIODE ON SEMICONDUCTOR B34 DIODE B34 diode schottky B34
Text: MBRS320T3, MBRS330T3, MBRS340T3 Preferred Devices Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRS320T3,
MBRS330T3,
MBRS340T3
MBRS340T3/D
marking code onsemi Diode B34
b34 DIODE schottky
SMC 403-03
MBRS340T3
b34 diode
diode marking b34
marking B34 diode SCHOTTKY
DIODE ON SEMICONDUCTOR B34
DIODE B34
diode schottky B34
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