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    DIODE CODE 10 Search Results

    DIODE CODE 10 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
    CUZ16V Toshiba Electronic Devices & Storage Corporation Zener Diode, 16 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    DIODE CODE 10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RJS6004TDPP-EJ

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJS6004TDPP-EJ R07DS0896EJ0200 Rev.2.00 Oct 17, 2013 600V - 10A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A


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    PDF RJS6004TDPP-EJ R07DS0896EJ0200 PRSS0002ZA-A O-220FP-2L) RJS6004TDPP-EJ

    RJS6004TDPP-EJ

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJS6004TDPP-EJ R07DS0896EJ0300 Rev.3.00 Jan 23, 2014 600V - 10A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A


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    PDF RJS6004TDPP-EJ R07DS0896EJ0300 PRSS0002ZA-A O-220FP-2L) RJS6004TDPP-EJ

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJS6004TDPN-EJ 600V - 10A - Diode SiC Schottky Barrier Diode R07DS0895EJ0101 Rev.1.01 Nov 21, 2012 Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0003AN-A


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    PDF RJS6004TDPN-EJ R07DS0895EJ0101 PRSS0003AN-A O-220AB-2L)

    RJS6004TDPP-EJ

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJS6004TDPP-EJ R07DS0896EJ0102 Rev.1.02 Nov 21, 2012 600V - 10A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A


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    PDF RJS6004TDPP-EJ R07DS0896EJ0102 PRSS0002ZA-A O-220FP-2L) RJS6004TDPP-EJ

    RPM SHIFT LIGHT

    Abstract: SSI encoder 360 degrees AEAS-7000 AEAS-7500 AEAS-7500-1GSG0 rotary encoder signal conditioning 1000RPM
    Text: AEAS - 7500 Ultra-Precision 16 bit Gray Code Absolute Encoder Module Data Sheet Description The encoder IC consists of 13 signal photo diode channels and 1 monitor photo diode channel and is used for the optical reading of rotary or linear code carriers i.e. discs or


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    PDF AEAS-7500-1GSG0 5989-3095EN RPM SHIFT LIGHT SSI encoder 360 degrees AEAS-7000 AEAS-7500 AEAS-7500-1GSG0 rotary encoder signal conditioning 1000RPM

    philips diode PH 33D

    Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
    Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)


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    PDF 1N5817 1N821 1N5818 1N821A 1N5819 philips diode PH 33D philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJS6005WDPK 600V - 30A - Diode SiC Schottky Barrier Diode R07DS0901EJ0200 Rev.2.00 Jan 28, 2014 Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A


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    PDF RJS6005WDPK R07DS0901EJ0200 PRSS0004ZE-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJS6005WDPK 600V - 30A - Diode SiC Schottky Barrier Diode R07DS0901EJ0201 Rev.2.01 Jan 31, 2014 Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A


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    PDF RJS6005WDPK R07DS0901EJ0201 PRSS0004ZE-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJS6005TDPN-EJ 600V - 15A - Diode SiC Schottky Barrier Diode R07DS0899EJ0101 Rev.1.01 Nov 21, 2012 Features • New semiconductor material : Silicon Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0003AN-A


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    PDF RJS6005TDPN-EJ R07DS0899EJ0101 PRSS0003AN-A O-220AB-2L)

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJS6004WDPK 600V - 20A - Diode SiC Schottky Barrier Diode R07DS0897EJ0200 Rev.2.00 Nov 21, 2012 Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A


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    PDF RJS6004WDPK R07DS0897EJ0200 PRSS0004ZE-A

    RJS6005TDPP-EJ

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJS6005TDPP-EJ R07DS0900EJ0200 Rev.2.00 Oct 17, 2013 600V - 15A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A


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    PDF RJS6005TDPP-EJ R07DS0900EJ0200 PRSS0002ZA-A O-220FP-2L) RJS6005TDPP-EJ

    PRSS0003ZE-A

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJS6004WDPQ-E0 600V - 20A - Diode SiC Schottky Barrier Diode R07DS0898EJ0101 Rev.1.01 Nov 21, 2012 Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0003ZE-A


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    PDF RJS6004WDPQ-E0 R07DS0898EJ0101 PRSS0003ZE-A O-247) PRSS0003ZE-A

    RJS6005TDPP-EJ

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJS6005TDPP-EJ R07DS0900EJ0300 Rev.3.00 Jan 23, 2014 600V - 15A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A


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    PDF RJS6005TDPP-EJ R07DS0900EJ0300 PRSS0002ZA-A O-220FP-2L) RJS6005TDPP-EJ

    diode 4148

    Abstract: DIODE-4148 A4 marking diode diode MARKING CODE 5d marking A4 marking A7 marking codes sot-23 A4 4148CA 4148SE diode 4148 sot-23
    Text: MMBD4148 / SE / CC / CA SURFACE MOUNT SWITCHING DIODE 4148 4148SE 3 1 4148CC 3 3 2 1 1 2 2 4148CA 3 1 MMBD4148 Marking Code: 5D MMBD4148SE Marking Code: A7 MMBD4148CC Marking Code: A4 MMBD4148CA Marking Code: A1 SOT-23 Plastic Package 2 Absolute Maximum Ratings Ta = 25 OC


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    PDF MMBD4148 4148SE 4148CC 4148CA MMBD4148 MMBD4148SE MMBD4148CC MMBD4148CA OT-23 diode 4148 DIODE-4148 A4 marking diode diode MARKING CODE 5d marking A4 marking A7 marking codes sot-23 A4 4148CA 4148SE diode 4148 sot-23

    schottky diode sod-123 marking code 120

    Abstract: marking code diode 14 1N5819WB diode sod-123 marking code 26 diode sod-123 marking code 120 marking code sr MARKING ME 123 1N5817WB 1N5818WB diode marking 14
    Text: 1N5817WB-1N5819WB 1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 Marking: 1N5817WB Marking Code: A0 1N5818WB Marking Code: ME 1N5819WB Marking Code: SR Top View Simplified outline SOD-123 and symbol Absolute Maximum Ratings Ta = 25OC


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    PDF 1N5817WB-1N5819WB 1N5817WB 1N5818WB 1N5819WB OD-123 1N5817WB 1N5818WB 1N5819WB schottky diode sod-123 marking code 120 marking code diode 14 diode sod-123 marking code 26 diode sod-123 marking code 120 marking code sr MARKING ME 123 diode marking 14

    KSD301

    Abstract: KSD-301 3015000 SDP530WMUF ksd3015000
    Text: SDP530WMUF Semiconductor Attenuator Diode Features • Low capacitance : Max 0.5pF • Low series resistance : rs=3Ω Typ. @IF=10mA • AGC and attenuator diode for VHF/UHF band tuner Ordering Information Type No. Marking Package Code SDP530WMU W3M SOT-323F


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    PDF SDP530WMUF SDP530WMU OT-323F KSD-3015-000 100MHz KSD301 KSD-301 3015000 SDP530WMUF ksd3015000

    transistor marking w3k

    Abstract: SDP530WAF SDP530WKF ksd2093
    Text: SDP530WKF Semiconductor Attenuator Diode Features • Low capacitance : Max 0.5pF • Low series resistance : rs=3Ω Typ. @IF=10mA • AGC and attenuator diode for VHF/UHF band tuner Ordering Information Type No. Marking Package Code SDP530WAF W3K SOT-23F


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    PDF SDP530WKF SDP530WAF OT-23F KSD-2093-000 100MHz transistor marking w3k SDP530WAF SDP530WKF ksd2093

    IC 2073

    Abstract: SDP530WMF KSD-2073-000 ksd2073
    Text: SDP530WMF Semiconductor Attenuator Diode Features • Low capacitance : Max 0.5pF • Low series resistance : rs=3Ω Typ. @IF=10mA • AGC and attenuator diode for VHF/UHF band tuner Ordering Information Type No. Marking Package Code SDP530WMF W3M SOT-23F


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    PDF SDP530WMF OT-23F KSD-2073-000 100MHz IC 2073 SDP530WMF KSD-2073-000 ksd2073

    IC 2073

    Abstract: ksd2073 KSD-2073-000 SDP530WM SDP530WMF ksd 190
    Text: SDP530WMF Semiconductor Attenuator Diode Features • Low capacitance : Max 0.5pF • Low series resistance : rs=3Ω Typ. @IF=10mA • AGC and attenuator diode for VHF/UHF band tuner Ordering Information Type No. Marking Package Code SDP530WM W3M SOT-23F


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    PDF SDP530WMF SDP530WM OT-23F KSD-2073-000 100MHz IC 2073 ksd2073 KSD-2073-000 SDP530WM SDP530WMF ksd 190

    c014 DATASHEET

    Abstract: transistor c014 c014 SDP530D KSD-C014-000 marking w3 diode pin diode attenuator uhf Marking W3
    Text: SDP530D Semiconductor Attenuator Diode Features • Low capacitance : Max 0.5pF • Low series resistance : rs=3Ω Typ. @IF=10mA • AGC and attenuator diode for VHF/UHF band tuner Ordering Information Type No. Marking Package Code SDP530D W3 SOD-323 unit : mm


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    PDF SDP530D OD-323 KSD-C014-000 100MHz c014 DATASHEET transistor c014 c014 SDP530D KSD-C014-000 marking w3 diode pin diode attenuator uhf Marking W3

    diode 1500V

    Abstract: diode marking H2 mark h2 diode fast recovery diode 1500V diode marking e41 diode 3A 1500V
    Text: ERE41-15 3A (1500V / 3A ) Outline drawings, mm FAST RECOVERY DIODE ø 7.5 ø 1.8 10 25 MIN. 25 MIN. Features Damper diode for high definition T.V. and high resolution display Marking High voltage by mesa design Color code : White High reliability Applications


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    PDF ERE41-15 diode 1500V diode marking H2 mark h2 diode fast recovery diode 1500V diode marking e41 diode 3A 1500V

    diode marking e41

    Abstract: E41-15 diode 3A 1500V 1500V 3A diode
    Text: ERE41-15 3A (1500V / 3A ) Outline drawings, mm FAST RECOVERY DIODE ø 7.5 ø 1.8 10 25 MIN. 25 MIN. Features Damper diode for high definition T.V. and high resolution display Marking High voltage by mesa design Color code : White High reliability Applications


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    PDF ERE41-15 diode marking e41 E41-15 diode 3A 1500V 1500V 3A diode

    SDP530Q

    Abstract: No abstract text available
    Text: SDP530Q Semiconductor Attenuator Diode Features • Low capacitance : Max 0.5pF • Low series resistance : rs=3Ω Typ. @IF=10mA • AGC and attenuator diode for VHF/UHF band tuner Ordering Information Type No. Marking Package Code SDP530Q W3 SOD-523 unit : mm


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    PDF SDP530Q OD-523 KSD-E010-001 100MHz SDP530Q

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BAR 65-02W Silicon RF Switching Diode Preliminary data • Low loss, low capacitance PIN-diode • Band switch for TV-tuners • Series diode for mobile communication transmit-receiver switch Type Marking Ordering Code Pin Configuration BAR 65-02W


    OCR Scan
    PDF 5-02W Q62702-A1216 SCD-80 100MHz