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Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJS6004TDPN-EJ 600V - 10A - Diode SiC Schottky Barrier Diode R07DS0895EJ0101 Rev.1.01 Nov 21, 2012 Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0003AN-A	Original	PDF	RJS6004TDPN-EJ R07DS0895EJ0101 PRSS0003AN-A O-220AB-2L)

Catalog Datasheet

MFG & Type

PDF

Document Tags

Untitled

Abstract: No abstract text available
Text: Preliminary Datasheet RJS6004TDPN-EJ 600V - 10A - Diode SiC Schottky Barrier Diode R07DS0895EJ0101 Rev.1.01 Nov 21, 2012 Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0003AN-A

Original

PDF

RJS6004TDPN-EJ R07DS0895EJ0101 PRSS0003AN-A O-220AB-2L)