Untitled
Abstract: No abstract text available
Text: CMT55N03G 25V N-CHANNEL ENHANCEMENT-MODE MOSFET APPLICATION FEATURES Vds=25V Advanced trench process technology RDS ON =6 mΩ (Max.) , VGS @10V, Ids@30A High Density Cell Design For Ultra Low On-Resistance RDS(ON)=9 mΩ (Max.), VGS @4.5V, Ids@30A
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CMT55N03G
O-252
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CMT35N03G
Abstract: TO-252 N-channel MOSFET Ultra Low voltage rds mosfet
Text: CMT35N03G 25V N-CHANNEL ENHANCEMENT-MODE MOSFET APPLICATION FEATURES Vds=25V Advanced trench process technology RDS ON =8.5 mΩ (Max.) , VGS @10V, Ids@30A High Density Cell Design For Ultra Low On-Resistance RDS(ON)=13 mΩ (Max.), VGS @4.5V, Ids@30A
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CMT35N03G
O-252
CMT35N03G
TO-252 N-channel MOSFET
Ultra Low voltage rds mosfet
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CMC lcd
Abstract: CMT9435G
Text: CMT9435G P-CHANNEL ENHANCEMENT MODE MOSFET GENERAL DESCRIPTION FEATURES VDS=-30V , ID=-5.3A Advanced trench process technology RDS ON , VGS@-10V , IDS@ -5.3A = 60mΩ High Density Cell Design For Ultra Low On-Resistance RDS(ON) , VGS@-4.5V , IDS@ -4.2A = 90mΩ
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CMT9435G
CMC lcd
CMT9435G
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Untitled
Abstract: No abstract text available
Text: CMT2301 P-CHANNEL ENHANCEMENT MODE MOSFET GENERAL DESCRIPTION FEATURES The CMT2301 is the P-Channel logic enhancement mode -20V/-2.3A ,RDS ON =130 mΩ@VGS=-4.5V power field effect transistors are produced using high cell -20V/-1.9A ,RDS(ON)=190 mΩ@VGS=-2.5V
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CMT2301
CMT2301
-20V/-2
-20V/-1
OT-23-3
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CMC lcd
Abstract: p-channel mosfet sot-23 P-Channel MOSFET 20V P-Channel Power MOSFET CMT2301 CMT2301GM233 CMT2301M233
Text: CMT2301 P-CHANNEL ENHANCEMENT MODE MOSFET GENERAL DESCRIPTION FEATURES The CMT2301 is the P-Channel logic enhancement mode -20V/-2.3A ,RDS ON =130 mΩ@VGS=-4.5V power field effect transistors are produced using high cell -20V/-1.9A ,RDS(ON)=190 mΩ@VGS=-2.5V
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CMT2301
CMT2301
-20V/-2
-20V/-1
OT-23-3
CMC lcd
p-channel mosfet
sot-23 P-Channel MOSFET
20V P-Channel Power MOSFET
CMT2301GM233
CMT2301M233
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diode 8a 600v
Abstract: CMPFCD86 CMPFCD86XN220
Text: CMPFCD86 PFC Diode 8A/600V FEATURES Fast switching for high efficiency Low noise Trr = 20ns Low reverse leakage current High voltage super FRD PFC application MECHANICAL DATA Case : Molded plastic TO-220AC / TO-220FP / SMC Epoxy : UL94V-0 rate flame retardant
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CMPFCD86
A/600V)
O-220AC
O-220FP
UL94V-0
MIL-STD-202
diode 8a 600v
CMPFCD86
CMPFCD86XN220
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diode 8a 600v
Abstract: CMPFCD86XN220
Text: CMPFCD86 PFC Diode 8A/600V FEATURES Fast switching for high efficiency Low noise Trr = 20ns Low reverse leakage current High voltage super FRD PFC application MECHANICAL DATA Case : Molded plastic TO-220AC / TO-220FP / SMC Epoxy : UL94V-0 rate flame retardant
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CMPFCD86
A/600V)
O-220AC
O-220FP
UL94V-0
MIL-STD-202
diode 8a 600v
CMPFCD86XN220
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CMPFCD86GN220
Abstract: No abstract text available
Text: CMPFCD86 PFC Diode 8A/600V FEATURES Fast switching for high efficiency Low noise Trr = 20ns Low reverse leakage current High voltage super FRD PFC application MECHANICAL DATA Case : Molded plastic TO-220AC / TO-220FP / SMC Epoxy : UL94V-0 rate flame retardant
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CMPFCD86
A/600V)
O-220AC
O-220FP
UL94V-0
MIL-STD-202
620support
CMPFCD86GN220
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Untitled
Abstract: No abstract text available
Text: CMPFCD86 PFC Diode 8A/600V FEATURES Fast switching for high efficiency Low noise Trr = 20ns Low reverse leakage current High voltage super FRD PFC application MECHANICAL DATA Case : Molded plastic TO-220AC / TO-220FP Epoxy : UL94V-0 rate flame retardant
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CMPFCD86
A/600V)
O-220AC
O-220FP
UL94V-0
MIL-STD-202
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Untitled
Abstract: No abstract text available
Text: CMT20N15 POWER MOSFET GENERAL DESCRIPTION FEATURES This Power MOSFET is designed to withstand high energy ! Robust High Voltage Termination in avalanche and commutation modes. The new energy ! Avalanche Energy Specified efficient design also offers a drain-to-source diode with a
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CMT20N15
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CM6805
Abstract: No abstract text available
Text: CMPFCD86 PFC Diode 8A/600V FEATURES Fast switching for high efficiency Low noise Trr ~ 25ns Ultra low reverse leakage current High voltage ultra faster diode PFC application High inrush current K A CMPFCD86 (TO-220AC) K MECHANICAL DATA
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CMPFCD86
A/600V)
O-220AC)
O-220FP)
O-252/DPAK)
O-220AC
O-220FP
CM6805
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CMT14N50
Abstract: MOSFET
Text: CMT14N50 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability Avalanche Energy Specified without degrading performance over time. In addition, this
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CMT14N50
CMT14N50
MOSFET
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S 170 MOSFET TRANSISTOR
Abstract: transistor w 431 PDF Datasheets CMT20N50 CMT20N50N3P td 6950
Text: CMT20N50 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination ! Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability ! Avalanche Energy Specified without degrading performance over time. In addition, this
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CMT20N50
S 170 MOSFET TRANSISTOR
transistor w 431 PDF Datasheets
CMT20N50
CMT20N50N3P
td 6950
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CMT01N60
Abstract: CMT01N60GN251 CMT01N60GN252 CMT01N60GN92 CMT01N60N251 CMT01N60N252 CMT01N60N92
Text: CMT01N60 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability Avalanche Energy Specified without degrading performance over time. In addition, this
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CMT01N60
CMT01N60
CMT01N60GN251
CMT01N60GN252
CMT01N60GN92
CMT01N60N251
CMT01N60N252
CMT01N60N92
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Field Effect Transistor CMT08N50
Abstract: CMT08N50 CMT08N50N220 CMT08N50N220FP
Text: CMT08N50 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability Avalanche Energy Specified without degrading performance over time. In addition, this
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CMT08N50
Field Effect Transistor CMT08N50
CMT08N50
CMT08N50N220
CMT08N50N220FP
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Untitled
Abstract: No abstract text available
Text: CMT14N50 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability Avalanche Energy Specified without degrading performance over time. In addition, this
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CMT14N50
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Untitled
Abstract: No abstract text available
Text: CMT08N50 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability Avalanche Energy Specified without degrading performance over time. In addition, this
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CMT08N50
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CMT01N60
Abstract: MOSFET
Text: CMT01N60 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability Avalanche Energy Specified without degrading performance over time. In addition, this
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CMT01N60
CMT01N60
MOSFET
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Logic Level N-Channel Power MOSFET
Abstract: CMT70N03
Text: CMT70N03 N-CHANNEL Logic Level Power MOSFET APPLICATION FEATURES Buck Converter High Side Switch Low ON Resistance Other Applications Low Gate Charge Peak Current vs Pulse Width Curve VDSS RDS ON Typ. ID Inductive Switching Curves 30V 6.6mΩ 71A Improved UIS Ruggedness
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CMT70N03
O-252
Logic Level N-Channel Power MOSFET
CMT70N03
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CMD1210
Abstract: No abstract text available
Text: ALPHA IND/ CTL MICROüJAVE □565303 OQQQGMO □ r OSE D T-Ô7 - / CMD SERIES GUNN DIODES Features • Available from 4 GHz through 110 GHz • High Efficiency • Low Noise • Maximum Output Power/Frequency Levels • Pulsed Devices with Several Watts
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tr/2088 RGB-5
Abstract: 2088 RGB-5
Text: REV ISIO NS . RIGHTS RESERVED LTR DESCRIPTION DATE LOGO CHANGE DWN 08MAÏ20I3 TY APVD KZ ~ ïï= 5: Q O', MAT E R I A L S : -HOUSING: HI GH T E MP E R A T U R E NYLON, BLACK, UL 9 4 V - 0 -SHIELD: 0.20mm T H I C K , BRASS P R E P L A T E D WI T H 1 . 2 7 / j m MI N S E M I - B R I G H T
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I840738-4
I840738-6
tr/2088 RGB-5
2088 RGB-5
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Untitled
Abstract: No abstract text available
Text: THE INFORMATION CONTAINED HEREIN IS CONSIDERED 'PROPRIETARY' TO BEL FUSE INC. AND SHALL NOT BE COPIED, REPRODUCED OR DISCLOSED WITHOUT THE WRITTEN APPROVAL OF BEL FUSE INC. RoHS 2002/9S/EÇ, BI-PDLAR LED PDLARITY PIN 11 PIN 12 CQLDR + □RANGE + GREEN —
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2002/9S/EÃ
350juH
100MHz
2MHz-30MHz
60MHz-80MHz
DC002
08642X6R
08642X6R95-FA
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Untitled
Abstract: No abstract text available
Text: THE INFORMATION CONTAINED HEREIN IS CONSIDERED 'PROPRIETARY* TD BEL FUSE INC. AND SHALL NOT BE COPIED, REPRODUCED OR DISCLOSED WITHOUT THE WRITTEN APPROVAL OF BEL FUSE INC. RoHS 2002/95/EC. BI-POLAR LED POLARITY COLOR PIN 11 PIN 12 + □RANGE + GREEN — —
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2002/95/EC.
100MHz
01-12-0R
0864-2X4R-95-F
08642X4R95-F
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Untitled
Abstract: No abstract text available
Text: REVISIONS . RIGHTS RESERVED LTR DESCRIPTION DATE LOGO CHANGE DWN 08MAÏ20I3 TY APVD KZ R J 4 5 MOD P L U G S E L E C T I V E S S S P R I NG M E M B E R /JA Q — ^C i CO -fc^ O - < CO O ', -< ? =n — ^ Z o CO CJl ^ 03 Ü <X> od A x RJ45 A , m LED SINGLE MAT E R I A L S :
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