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    Abstract: CMT9435G
    Text: CMT9435G P-CHANNEL ENHANCEMENT MODE MOSFET GENERAL DESCRIPTION FEATURES ‹ VDS=-30V , ID=-5.3A ‹ Advanced trench process technology ‹ RDS ON , VGS@-10V , IDS@ -5.3A = 60mΩ ‹ High Density Cell Design For Ultra Low On-Resistance ‹ RDS(ON) , VGS@-4.5V , IDS@ -4.2A = 90mΩ


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