PN06L13
Abstract: No abstract text available
Text: SPD50N06S2L-13 OptiMOS =Power-Transistor Product Summary Feature 55 VDS N-Channel R DS on Enhancement mode ID Logic Level V m 12.7 50 A P- TO252 -3-11 Avalanche rated dv/dt rated Type SPD50N06S2L-13 Package Ordering Code P- TO252 -3-11 Q67060- S7421
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SPD50N06S2L-13
SPD50N06S2L-13
Q67060-
S7421
PN06L13
BSPD50N06S2L-13,
PN06L13
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PN06L13
Abstract: ANPS071E BSPD50N06S2L-13 SPD50N06S2L-13
Text: SPD50N06S2L-13 OptiMOSâ Power-Transistor Product Summary Feature VDS • N-Channel 55 R DS on • Enhancement mode ID • Logic Level V 12.7 mΩ 50 A P- TO252 -3-11 • Avalanche rated • dv/dt rated Type SPD50N06S2L-13 Package Ordering Code P- TO252 -3-11 Q67060- S7421
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SPD50N06S2L-13
Q67060-
S7421
PN06L13
BSPD50N06S2L-13,
SPD50N06S2L-13
PN06L13
ANPS071E
BSPD50N06S2L-13
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Untitled
Abstract: No abstract text available
Text: IPA100N08N3 G OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters VDS 80 V RDS(on),max 10 mW ID 40 A • Excellent gate charge x R DS(on) product (FOM) • N-channel, normal level
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IPA100N08N3
IEC61249-2-21
PG-TO220-FP
100N08N
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APT80GP60JD3
Abstract: No abstract text available
Text: APT80GP60J 600V POWER MOS 7 IGBT E E The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT80GP60J
APT80GP60JD3
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APT80GP60B2
Abstract: No abstract text available
Text: APT80GP60B2 600V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT80GP60B2
APT80GP60B2
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Untitled
Abstract: No abstract text available
Text: APT80GP60J 600V POWER MOS 7 IGBT E E The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT80GP60J
Volta587)
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Untitled
Abstract: No abstract text available
Text: APT80GP60JDF3 600V POWER MOS 7 IGBT E E The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT80GP60JDF3
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APT80GP60J
Abstract: No abstract text available
Text: APT80GP60J 600V POWER MOS 7 IGBT E E The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT80GP60J
Gat87)
APT80GP60J
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STRH100N10FSY3
Abstract: STRH100N10FSY1
Text: STRH100N10FSY3 N-channel 100V - 0.024Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET General features Type VDSS STRH100N10FSY3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge ■ Light weight
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STRH100N10FSY3
O-254AA
100kRad
34Mev/cm
STRH100N10FSY3
STRH100N10FSY1
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triac zd 107
Abstract: triac bcr BS08A BS08A TRANSISTOR equivalent SCR induction furnace circuit diagram 1000w inverter design and calculation TRIAC BCR 50 AM BCR 3A 400V CR3JM equivalent TRIACS EQUIVALENT LIST
Text: Low Power Applications and Technical Data Book A Guide to Using the Data Book 1.0 Numbering System 2.0 Symbols and Definitions of Major Parameters 3.0 Powerex Quality Assurance Program 4.0 Semiconductor Device Reliability 5.0 Reliability Test Methods 6.0 Designing Trigger Circuits
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BCR10CM-8L
Loa25
O-202B1
O-220
BS08A
triac zd 107
triac bcr
BS08A
BS08A TRANSISTOR equivalent
SCR induction furnace circuit diagram
1000w inverter design and calculation
TRIAC BCR 50 AM
BCR 3A 400V
CR3JM equivalent
TRIACS EQUIVALENT LIST
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st 72a
Abstract: No abstract text available
Text: STRH100N10FSY3 N-channel 100V - 0.024Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH100N10FSY3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge
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STRH100N10FSY3
O-254AA
100kRad
34Mev/cm
O-254AA
st 72a
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transistor C3866
Abstract: Zener PH SEC E13009 ups circuit schematic diagram 1000w E13007 2 E13007 C3866 power transistor texas ttl 74L505 Transistor C3246
Text: BID CΚΤ DOLLY L IST L OGO LIST SA F E TY & RELIA ΒL TY ΤΕΚ PIN SYSTE M DIGITA L IC's MEMORIES, MOS CMOS .EC L , TT L MICR OP R OC E SSOR SPE CIA L FUN CTION IC's DIGITAL l LINE AR K ARR AYS LIN E A R IC's (PUR CH ) ΤΕΚ-MADE IC's IC's INDEX (COL ORE D PGS)
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CRT - TCL COLOUR TV SCHEMATIC DIAGRAM
Abstract: MATSUA compressor catalogue Riyadh Cables Catalogue PD 18N50 equivalent MATSUSHITA compressor catalogue CRT TCL COLOUR TV SCHEMATIC DIAGRAM Anritsu ML524B operation manual ML2430 CRT - tcl 29" COLOUR TV SCHEMATIC DIAGRAM Anritsu MG442A
Text: CONTENTS Outline of Anritsu Corporation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 How to Use This Catalog . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Sales, Shipping, and Service Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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hitachi mosfet power amplifier audio application
Abstract: 2SK215 equivalent PM4550C 2sd667 2sb647 2SD667 equivalent 2SJ99 K429 HITACHI 2SJ56 k399 Hitachi 2sk176 2sj56
Text: APPLICATION NOTE 1-9 Pov/er MOS FET • ' Bo* 3 V•? * ¿ 'S r ^ m is y 701 S ! Reo N o 64 1688 07 P O BO X 1194. R A N D tíU R G , 2 1 2 5 M F K E N T H O US E D O V E R S T R E E T . R A N D B U R G T V L , 21 9 4 0 1 1 7 8 9 1 4 0 0 /2 T E L E X 4 -2 0 4 5 2 F A X 1 0 1 1 )7 8 7 0 2 6 3
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RE79-24
hitachi mosfet power amplifier audio application
2SK215 equivalent
PM4550C
2sd667 2sb647
2SD667 equivalent
2SJ99
K429
HITACHI 2SJ56
k399
Hitachi 2sk176 2sj56
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Untitled
Abstract: No abstract text available
Text: HGTG27N120BN Semiconductor A p ril 1999 D ata S h eet 72A, 1200V, NPT Series N-Channel IGBT Features The HGTG27N120BN is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best
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HGTG27N120BN
HGTG27N120BN
140ns
1-800-4-HARRIS
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transistor cross reference
Abstract: MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N npn transistor RCA 467 TFK 7 segment displays PUT 2N6027 delco 466
Text: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM II DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR SPECIAL FUNCTION IC's DIGITAL / LINEAR ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC’s 3 IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC
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MHW721A2
Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA
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1PHX11136Q-14
MHW721A2
13001 S 6D TRANSISTOR
atv5030* motorola
2N5591 MOTOROLA
13001 6D TRANSISTOR
BGY41
MHW710-1
construction linear amplifier 2sc1945
7119 amperex
bf503
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TD2425F
Abstract: relay d2w 12ARMS reversing ssr 1200ap MOV250 D2W203F D2W203F-11 CRYDOM D2W202F D2W202F
Text: C R Y 3D M DIN RAIL MOUNT SOLID STATE RELAYS PRODUCT SELECTION GUIDE EUROPE THE CHOICE IS YOURS This product selection guide sets out to advise the user how to achieve the best results from our SOLID STATE RELAYS when used in conjunction with our new range of
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460Vrms
460Vrms
RGP10B
1N5624GP
1N3883
MOV300
MOV250
MOV460
MQV460
FRD101
TD2425F
relay d2w
12ARMS
reversing ssr
1200ap
D2W203F
D2W203F-11
CRYDOM D2W202F
D2W202F
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Untitled
Abstract: No abstract text available
Text: LF3330 Vertical Digital Image Filter D E V IC E S IN C O R P O R A T E D DESCRIPTION FEATURES □ 83 MHz Data Rate □ 12-bit Data and Coefficients □ On-board Memory for 256 Coefficient Sets □ LF Interface Allows All 256 Coefficient Sets to be Updated
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LF3330
12-bit
16-bit
12-bit,
MIL-STD-883,
LF3330
LF3330QC25
LF3330QC18
LF3330QC15
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relais datenbuch siemens
Abstract: siemens datenbuch triac zu 103 ma BSS97 diode sg 5 ts Scans-048 BUZ23 s489 DSAGER00059 Transistor Datenbuch
Text: SIEMENS SIPMOS Kleinsignaltransistoren Technische Beschreibung Ausgabe September 1986 Inh alt 1. Einleitung 5 2. Technologie 5 3. Schaltverhalten 6 4. D atenblattangaben 8 4.1 4.2 4.3 Drainstrom lD Gate-Schwellenspannung VGS th Temperaturabhängigkeit 8 8
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BRT12H
BRT12M
relais datenbuch siemens
siemens datenbuch
triac zu 103 ma
BSS97
diode sg 5 ts
Scans-048
BUZ23
s489
DSAGER00059
Transistor Datenbuch
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HRND
Abstract: LF3C ca3 contactor
Text: LF3330 Vertical Digital Image Filter D E V IC E S IN C O R P O R A T E D DESCRIPTION FEATURES □ 83 MHz Data Rate □ 12-bit Data and Coefficients □ On-board Memory for 256 Coefficient Sets □ LF Interface Allows All 256 Coefficient Sets to be Updated
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LF3330
12-bit
16-bit
12-bit,
MIL-STD-883,
04/22/98-LES
330-A
100-PIN
9Ho355b5cia5
HRND
LF3C
ca3 contactor
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Untitled
Abstract: No abstract text available
Text: LF3330 Vertical Digital Image Filter D E V IC E S IN C O R P O R A T E D FEATURES □ 83 MHz Data Rate □ 12-bit Data and Coefficients □ On-board Memory for 256 Coefficient Sets □ LF Interface Allows All 256 Coefficient Sets to be Updated Within Vertical Blanking
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LF3330
12-bit
16-bit
12-bit,
MIL-STD-883,
LF3330
CF11-0
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Untitled
Abstract: No abstract text available
Text: LF3330 Vertical Digital Image Filter D E V IC E S IN C O R P O R A T E D FEATURES □ 83 MHz Data Rate □ 12-bit Data and Coefficients □ On-board Memory for 256 Coefficient Sets □ LF Interface Allows All 256 Coefficient Sets to be Updated Within Vertical Blanking
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LF3330
12-bit
16-bit
12-bit,
LF3330
COUT10
COUT11
LF3330QC15
LF3330QC12
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TOPSWITCH DN-16
Abstract: No abstract text available
Text: TOP100-4 TOPSwitch Family POWER Three-terminal Off-line PWM Switch INTEGRATIONS, INC. Product Highlights Low Cost Replacement for Discrete Switchers • 20 to 50 few er com ponents - cuts cost, increases reliability • Source-connected tab and Controlled M O SFET tum -on
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OP100-4
SO-20
SO-16
TOPSWITCH DN-16
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