BYV28
Abstract: BYV28-100 BYV28-150 BYV28-200 BYV28-50
Text: BYV28/. VISHAY Vishay Semiconductors Ultra Fast Avalanche Sinterglass Diode \ Features • • • • • Controlled avalanche characteristic Low forward voltage Ultra fast recovery time Glass passivated junction Hermetically sealed package Applications
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BYV28/.
MIL-STD-750,
BYV28-50
BYV28-100
BYV28-150
D-74025
07-Jan-03
BYV28
BYV28-100
BYV28-150
BYV28-200
BYV28-50
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Untitled
Abstract: No abstract text available
Text: BYV28/. VISHAY Vishay Semiconductors Ultra Fast Avalanche Sinterglass Diode Features • • • • Controlled avalanche characteristic Low forward voltage Ultra fast recovery time Glass passivated junction 949588 Mechanical Data • Hermetically sealed package
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BYV28/.
OD-64
MIL-STD-750,
BYV28-50
BYV28-100
BYV28-150
BYV28-200
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BYV28-600
Abstract: No abstract text available
Text: BYV28-600 VISHAY Vishay Semiconductors Ultra Fast Avalanche Sinterglass Diode Features • • • • Glass passivated Hermetically sealed axial-leaded glass envelope Low reverse current Ultra fast soft recovery switching 949588 Applications Mechanical Data
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BYV28-600
OD-64
MIL-STD-750,
BYV28-600
D-74025
12-Aug-04
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byv28-600
Abstract: No abstract text available
Text: BYV28-600 www.vishay.com Vishay Semiconductors Ultra-Fast Avalanche Sinterglass Diode FEATURES • Glass passivated • Hermetically sealed axial-leaded glass envelope • Low reverse current • Ultra fast soft recovery switching • Material categorization:
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BYV28-600
OD-64
MIL-STD-750,
BYV28-600-TR
250emarks
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
byv28-600
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Untitled
Abstract: No abstract text available
Text: BYV28-600 www.vishay.com Vishay Semiconductors Ultra-Fast Avalanche Sinterglass Diode FEATURES • Glass passivated • Hermetically sealed axial-leaded glass envelope • Low reverse current • Ultra fast soft recovery switching • Material categorization:
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BYV28-600
OD-64
MIL-STD-750,
BYV28-600-TR
250electronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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DIODE BYV28
Abstract: DIODE WITH SOD CASE
Text: BYV28/. Vishay Semiconductors Ultra Fast Avalanche Sinterglass Diode Features • • • • • • • Controlled avalanche characteristic Low forward voltage e2 Ultra fast recovery time Glass passivated junction Hermetically sealed package Lead Pb -free component
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PDF
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BYV28/.
2002/95/EC
2002/96/EC
OD-64
MIL-STD-750,
BYV28-50
BYV28-100
BYV28-150
BYV28-200
D-74025
DIODE BYV28
DIODE WITH SOD CASE
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byv28
Abstract: DIODE BYV28 BYV28150 BYV28-50 BYV28-200
Text: BYV28-50, BYV28-100, BYV28-150, BYV28-200 Vishay Semiconductors Ultra-Fast Avalanche Sinterglass Diode FEATURES • Controlled avalanche characteristic • Low forward voltage • Ultra fast recovery time • Glass passivated junction • Hermetically sealed package
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PDF
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BYV28-50,
BYV28-100,
BYV28-150,
BYV28-200
2002/95/EC
2002/96/EC
OD-64
MIL-STD-750,
BYV28-50
BYV28-100
byv28
DIODE BYV28
BYV28150
BYV28-200
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DIODE BYV28
Abstract: Ultra Fast Avalanche Sinterglass Diode BYV28150 BYV28-50 BYV28-200 byv28
Text: BYV28-50, BYV28-100, BYV28-150, BYV28-200 Vishay Semiconductors Ultra-Fast Avalanche Sinterglass Diode FEATURES • Controlled avalanche characteristic • Low forward voltage • Ultra fast recovery time • Glass passivated junction • Hermetically sealed package
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Original
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PDF
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BYV28-50,
BYV28-100,
BYV28-150,
BYV28-200
2002/95/EC
2002/96/EC
OD-64
MIL-STD-750,
BYV28-50
BYV28-100
DIODE BYV28
Ultra Fast Avalanche Sinterglass Diode
BYV28150
BYV28-200
byv28
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BYV28
Abstract: BYV28-100 BYV28-150 BYV28-200 BYV28-50
Text: BYV28/. Vishay Semiconductors Ultra Fast Avalanche Sinterglass Diode Features • • • • • • • Controlled avalanche characteristic Low forward voltage e2 Ultra fast recovery time Glass passivated junction Hermetically sealed package Lead Pb -free component
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PDF
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BYV28/.
2002/95/EC
2002/96/EC
OD-64
MIL-STD-750,
BYV28-50
OD-64lectual
18-Jul-08
BYV28
BYV28-100
BYV28-150
BYV28-200
BYV28-50
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BYV28
Abstract: iso 9587 Ultra Fast Avalanche Sinterglass Diode SOD-64 BYV28-100 BYV28-150 BYV28-200 BYV28-50
Text: BYV28/. Vishay Semiconductors Ultra Fast Avalanche Sinterglass Diode Features • • • • • • • Controlled avalanche characteristic Low forward voltage e2 Ultra fast recovery time Glass passivated junction Hermetically sealed package Lead Pb -free component
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BYV28/.
2002/95/EC
2002/96/EC
OD-64
MIL-STD-750,
BYV28-50
OD-64ed
08-Apr-05
BYV28
iso 9587
Ultra Fast Avalanche Sinterglass Diode
SOD-64
BYV28-100
BYV28-150
BYV28-200
BYV28-50
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byv28
Abstract: DIODE BYV28 BYV28-50 BYV28-200
Text: BYV28-50, BYV28-100, BYV28-150, BYV28-200 Vishay Semiconductors Ultra-Fast Avalanche Sinterglass Diode FEATURES • Controlled avalanche characteristic • Low forward voltage • Ultra fast recovery time • Glass passivated junction • Hermetically sealed package
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Original
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PDF
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BYV28-50,
BYV28-100,
BYV28-150,
BYV28-200
2002/95/EC
2002/96/EC
OD-64
MIL-STD-750,
BYV28-50
BYV28-100
byv28
DIODE BYV28
BYV28-200
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BYV28-600
Abstract: No abstract text available
Text: BYV28-600 VISHAY Vishay Semiconductors Ultra Fast Avalanche Sinterglass Diode \ Features • • • • Glass passivated Hermetically sealed axial-leaded glass envelope Low reverse current Ultra fast soft recovery switching Applications TV SMPS Power feedback systems
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Original
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PDF
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BYV28-600
MIL-STD-750,
D-74025
07-Jan-03
BYV28-600
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Untitled
Abstract: No abstract text available
Text: BYV28-50, BYV28-100, BYV28-150, BYV28-200 www.vishay.com Vishay Semiconductors Ultra-Fast Avalanche Sinterglass Diode FEATURES • Controlled avalanche characteristic • Low forward voltage • Ultra fast recovery time • Glass passivated junction • Hermetically sealed package
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Original
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PDF
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BYV28-50,
BYV28-100,
BYV28-150,
BYV28-200
OD-64
MIL-STD-750,
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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byv28
Abstract: BYV28-200 BYV28-50
Text: BYV28-50, BYV28-100, BYV28-150, BYV28-200 www.vishay.com Vishay Semiconductors Ultra-Fast Avalanche Sinterglass Diode FEATURES • Controlled avalanche characteristic • Low forward voltage • Ultra fast recovery time • Glass passivated junction • Hermetically sealed package
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Original
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PDF
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BYV28-50,
BYV28-100,
BYV28-150,
BYV28-200
OD-64
MIL-STD-750,
BYV28-200
BYV28-200-TRtrademarks
2011/65/EU
byv28
BYV28-50
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BYV28-600
Abstract: 04-AUG-10
Text: BYV28-600 Vishay Semiconductors Ultra-Fast Avalanche Sinterglass Diode FEATURES • Glass passivated • Hermetically envelope sealed axial-leaded glass • Low reverse current • Ultra fast soft recovery switching • Compliant to RoHS directive 2002/95/EC and in
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PDF
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BYV28-600
2002/95/EC
2002/96/EC
OD-64
MIL-STD-750,
11-Mar-11
BYV28-600
04-AUG-10
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DIODE BYV28
Abstract: byv28 diode SOD 64
Text: BYV28 Series Ultra Fast Avalanche Sinterglass Diode Features Controlled avalanche characteristic Low forward voltage Ultra fast recovery time Glass passivated junction Hermetically sealed package Applications Very fast rectification e.g. for switch mode power sup ply
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BYV28
OD-64
MIL-STD-750,
BYV28-50
BYV28-100
BYV28-150
BYV28-200
DIODE BYV28
diode SOD 64
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DIODE BYV28
Abstract: byv28
Text: BYV28/. VISHAY Vishay Semiconductors Ultra Fast Avalanche Sinterglass Diode Features • • • • • Controlled avalanche characteristic Low forward voltage Ultra fast recovery time Glass passivated junction Hermetically sealed package Applications Very fast rectifier e.g. for switch mode power supply
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Original
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PDF
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BYV28/.
MILSTD-750,
BYV28-50
BYV28-100
BYV28-150
BYV28-200
D-74025
09-Oct-00
DIODE BYV28
byv28
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Untitled
Abstract: No abstract text available
Text: BYV28-600 Vishay Semiconductors Ultra-Fast Avalanche Sinterglass Diode FEATURES • Glass passivated • Hermetically envelope sealed axial-leaded glass • Low reverse current • Ultra fast soft recovery switching • Compliant to RoHS directive 2002/95/EC and in
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Original
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PDF
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BYV28-600
2002/95/EC
2002/96/EC
OD-64
MIL-STD-750,
BYV28-600
OD-64
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: BYV28-600 Vishay Semiconductors Ultra-Fast Avalanche Sinterglass Diode FEATURES • Glass passivated • Hermetically envelope sealed axial-leaded glass • Low reverse current • Ultra fast soft recovery switching • Compliant to RoHS directive 2002/95/EC and in
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Original
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PDF
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BYV28-600
2002/95/EC
2002/96/EC
OD-64
MIL-STD-750,
BYV28-600
OD-64
2011/65/EU
2002/95/EC.
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BYV28-600
Abstract: No abstract text available
Text: BYV28-600 Vishay Semiconductors Ultra Fast Avalanche Sinterglass Diode Features • Glass passivated • Hermetically sealed axial-leaded glass e2 envelope • Low reverse current • Ultra fast soft recovery switching • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC
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Original
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PDF
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BYV28-600
2002/95/EC
2002/96/EC
OD-64
MIL-STD-750,
OD-64
18-Jul-08
BYV28-600
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BYV28-600
Abstract: No abstract text available
Text: BYV28-600 Vishay Semiconductors Ultra Fast Avalanche Sinterglass Diode Features • Glass passivated • Hermetically sealed axial-leaded glass e2 envelope • Low reverse current • Ultra fast soft recovery switching • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC
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Original
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PDF
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BYV28-600
2002/95/EC
2002/96/EC
OD-64
MIL-STD-750,
OD-64
08-Apr-05
BYV28-600
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Untitled
Abstract: No abstract text available
Text: BYV28-600 Vishay Semiconductors Ultra Fast Avalanche Sinterglass Diode Features • Glass passivated • Hermetically sealed axial-leaded glass e2 envelope • Low reverse current • Ultra fast soft recovery switching • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC
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Original
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PDF
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BYV28-600
2002/95/EC
2002/96/EC
OD-64
MIL-STD-750,
BYV28-600
D-74025
14-Apr-05
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OZ 9983
Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —
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MBRB3030CTL
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
OZ 9983
mbr3045pt transistor
940 629 MOTOROLA 220
Motorola marking code K 652 TO-220
MUR3030
TRANSISTOR BC 456
Diode Marking 1N4007 Motorola
1N2069
A14F diode
BYV33-45
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philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817
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1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
philips diode PH 33D
PH C5V1
philips diode PH 33m
philips diode PH 33J
PH 33D
PH33D
ph33g
33G PH DIODE
PH 33G
philips diode PH 37m
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