Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DIODE BYV26A Search Results

    DIODE BYV26A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE BYV26A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BYV26E

    Abstract: BYV26E-TAP BYV26E-TR
    Text: BYV26A, BYV26B, BYV26C, BYV26D, BYV26E www.vishay.com Vishay Semiconductors Ultra-Fast Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Very low switching losses • Low reverse current • High reverse voltage


    Original     		PDF BYV26A, BYV26B, BYV26C, BYV26D, BYV26E OD-57 MIL-STD-750, BYV26E BYV26E-TR BYV26E-TAP

    BYV26C diode

    Abstract: BYV26A BYV26E
    Text: BYV26A, BYV26B, BYV26C, BYV26D, BYV26E Vishay Semiconductors Ultra Fast Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Very low switching losses • Low reverse current • High reverse voltage 949539


    Original     		PDF BYV26A, BYV26B, BYV26C, BYV26D, BYV26E 2002/95/EC 2002/96/EC OD-57 MIL-STD-750, BYV26A BYV26C diode BYV26E

    Untitled

    Abstract: No abstract text available
    Text: BYV26A, BYV26B, BYV26C, BYV26D, BYV26E www.vishay.com Vishay Semiconductors Ultra-Fast Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Very low switching losses • Low reverse current • High reverse voltage


    Original     		PDF BYV26A, BYV26B, BYV26C, BYV26D, BYV26E OD-57 MIL-STD-750, 2002/95/EC. 2002/95/EC 2011/65/EU.

    BYV26C diode

    Abstract: byv26c BYV26E
    Text: BYV26A, BYV26B, BYV26C, BYV26D, BYV26E Vishay Semiconductors Ultra Fast Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Very low switching losses • Low reverse current • High reverse voltage 949539


    Original     		PDF BYV26A, BYV26B, BYV26C, BYV26D, BYV26E 2002/95/EC 2002/96/EC OD-57 MIL-STD-750, BYV26A BYV26C diode byv26c BYV26E

    Untitled

    Abstract: No abstract text available
    Text: BYV26A, BYV26B, BYV26C, BYV26D, BYV26E www.vishay.com Vishay Semiconductors Ultra-Fast Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Very low switching losses • Low reverse current • High reverse voltage


    Original     		PDF BYV26A, BYV26B, BYV26C, BYV26D, BYV26E OD-57 MIL-STD-750, 2011/65/EU 2002/95/EC. 2002/95/EC

    BYV26C diode

    Abstract: diode BYV26E BYV26CV BYV26B BYV26C BYV26D BYV26E BYV26ev BYV26A Ultra Fast Avalanche Sinterglass Diode
    Text: BYV26A, BYV26B, BYV26C, BYV26D, BYV26E Vishay Semiconductors Ultra Fast Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Very low switching losses • Low reverse current • High reverse voltage 949539


    Original     		PDF BYV26A, BYV26B, BYV26C, BYV26D, BYV26E 2002/95/EC 2002/96/EC OD-57 MIL-STD-750, 11-Mar-11 BYV26C diode diode BYV26E BYV26CV BYV26B BYV26C BYV26D BYV26E BYV26ev BYV26A Ultra Fast Avalanche Sinterglass Diode

    Untitled

    Abstract: No abstract text available
    Text: BYV26A . BYV26E 1 Amp. Very Fast Soft Recovery Glass Passivated Avalanche Diode Dimensions in mm. DO-41 Plastic Current 1.0 A at 55 °C Voltage 200 to 1000 V R • Glass passivated junction Mounting instructions 1. Min. distance from body to soldering point,


    Original     		PDF BYV26A BYV26E DO-41 BYV26A BYV26B BYV26C BYV26D

    BYV26

    Abstract: BYV26A BYV26B BYV26C BYV26D BYV26E
    Text: BYV26A.BYV26E 1 Amp. Very Fast Soft Recovery Glass Passivated Avalanche Diode Dimensions in mm. DO-41 Plastic Voltage 200 to 1000 V. Current 1 A at 55 ºC. 5 +0.2 -0 58.5 ± 0.5 Mounting instructions 1. Min. distance from body to soldering point,


    Original     		PDF BYV26A. BYV26E DO-41 BYV26A BYV26 BYV26; BYV26D; BYV26 BYV26A BYV26B BYV26C BYV26D BYV26E

    byv26 500

    Abstract: BYV26 BYV26A BYV26B BYV26C BYV26D BYV26E BYV26DBYV26E
    Text: BYV26A.BYV26E 1 Amp. Very Fast Soft Recovery Glass Passivated Avalanche Diode Dimensions in mm. DO-41 Plastic Voltage 200 to 1000 V. Current 1 A at 55 ºC. 5 +0.2 -0 58.5 ± 0.5 Mounting instructions 1. Min. distance from body to soldering point,


    Original     		PDF BYV26A. BYV26E DO-41 BYV26A BYV26 BYV26; BYV26D; byv26 500 BYV26 BYV26A BYV26B BYV26C BYV26D BYV26E BYV26DBYV26E

    Untitled

    Abstract: No abstract text available
    Text: BYV26A . BYV26E 1 Amp. Very Fast Recovery Glass Passivated Avalanche Diode DO-41 Plastic Current 1.0 A at 55 °C Voltage 200 to 1000 V ø0.8 ±0.05 ø2.6 ±0.1 Dimensions in mm. R +0.2 -0 5 ±0.5 58.5 Mounting instructions 1. Min. distance from body to soldering point,


    Original     		PDF BYV26A BYV26E DO-41 BYV26B BYV26C BYV26A BYV26D

    BYV26A

    Abstract: No abstract text available
    Text: BYV26A . BYV26E 1 Amp. Very Fast Recovery Glass Passivated Avalanche Diode DO-41 Plastic Current 1.0 A at 55 °C Voltage 200 to 1000 V ø0.8 ±0.05 ø2.6 ±0.1 Dimensions in mm. R +0.2 -0 5 ±0.5 58.5 Mounting instructions 1. Min. distance from body to soldering point,


    Original     		PDF BYV26A BYV26E DO-41 BYV26A BYV26D

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


    Original     		PDF MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45

    byv26 equivalent

    Abstract: BYV26C diode byv26 500 byv26e diode case R-1 BYV26 BYV26A BYV26B BYV26C BYV26D
    Text: BYV26 VISHAY Vishay Semiconductors Ultra Fast Avalanche Sinterglass Diode Features • • • • • Glass passivated junction Hermetically sealed package Very low switching losses Low reverse current High reverse voltage Applications Switched mode power supplies


    Original     		PDF BYV26 OD-57 MIL-STD-750, BYV26A OD-57 BYV26B BYV26C BYV26s byv26 equivalent BYV26C diode byv26 500 byv26e diode case R-1 BYV26 BYV26A BYV26B BYV26C BYV26D

    philips diode PH 33D

    Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
    Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817


    Original     		PDF 1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A philips diode PH 33D PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m

    BYV26DBYV26E

    Abstract: BYV26C diode BYV26C BYV26ABYV26C
    Text: BYV26 Series Ultra Fast Avalanche Sinterglass Diode Features — — — — — Glass passivated junction Hermetically sealed package Very low switching losses Low reverse current High reverse voltage Applications Switched mode power supplies High-frequency inverter circuits


    Original     		PDF BYV26 MILSTD-750, BYV26A BYV26B BYV26C BYV26D BYV26E BYV26E BYV26DBYV26E BYV26C diode BYV26ABYV26C

    philips diode PH 33D

    Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
    Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)


    Original     		PDF 1N5817 1N821 1N5818 1N821A 1N5819 philips diode PH 33D philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50

    mur1650

    Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
    Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and


    Original     		PDF MBRB1045 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 mur1650 T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount

    FE16B

    Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
    Text: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —


    Original     		PDF MBRP60035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 FE16B mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent

    BYV26CV

    Abstract: BYV26 BYV26A BYV26B BYV26C BYV26D BYV26E BYV26C diode
    Text: BYV26 Vishay Semiconductors Ultra Fast Avalanche Sinterglass Diode Features • • • • • • • Glass passivated junction Hermetically sealed package e2 Very low switching losses Low reverse current High reverse voltage Lead Pb -free component Component in accordance to RoHS 2002/95/EC


    Original     		PDF BYV26 2002/95/EC 2002/96/EC MIL-STD-750, OD-57 BYV26A OD-57 BYV26B 08-Apr-05 BYV26CV BYV26 BYV26A BYV26B BYV26C BYV26D BYV26E BYV26C diode

    BYV26CV

    Abstract: diode sod57 BYV26ev BYV26C diode BYV26 BYV26A BYV26B BYV26C BYV26D BYV26E
    Text: BYV26 Vishay Semiconductors Ultra Fast Avalanche Sinterglass Diode Features • • • • • • • Glass passivated junction Hermetically sealed package e2 Very low switching losses Low reverse current High reverse voltage Lead Pb -free component Component in accordance to RoHS 2002/95/EC


    Original     		PDF BYV26 2002/95/EC 2002/96/EC MIL-STD-750, OD-57 BYV26A OD-57 BYV26B BYV26E BYV26CV diode sod57 BYV26ev BYV26C diode BYV26 BYV26A BYV26B BYV26C BYV26D BYV26E

    PK MUR 460

    Abstract: pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360
    Text: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,


    Original     		PDF MBR340 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 PK MUR 460 pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360

    BYV26CV

    Abstract: byv26ev BYV26 BYV26A BYV26B BYV26C BYV26D BYV26E
    Text: BYV26 Vishay Semiconductors Ultra Fast Avalanche Sinterglass Diode Features • • • • • • • Glass passivated junction Hermetically sealed package e2 Very low switching losses Low reverse current High reverse voltage Lead Pb -free component Component in accordance to RoHS 2002/95/EC


    Original     		PDF BYV26 2002/95/EC 2002/96/EC MIL-STD-750, OD-57 BYV26A OD-57 BYV26B 18-Jul-08 BYV26CV byv26ev BYV26 BYV26A BYV26B BYV26C BYV26D BYV26E

    BYv26 200

    Abstract: byv26 500
    Text: FAGOR ^ BYV26 SERIES 1Amp.Very Fast Soft Recovery Glass Passivated Avalanche Diode Dimensions in mm. DO-41 Plastic Mounting instructions 1. Min. distance from body to soldering point, 4 mm. 2. Max. solder temperature, 350 °C. 3. Max. soldering time, 3.5 sec.


    OCR Scan     		PDF DO-41 BYV26 BYv26 200 byv26 500