BLS 18M-PS-1P-E5-C-S4
Abstract: 18M-PA-1PD-E5-C-S Balluff bos 18m 18M-PA-1QB-E5-C-S4 BLS-18M-XX-1P-E5-L-S4 18M-PS-1P-E5-C-S4 BLS 18M-XX-1P-E5-L-S4 18M-PO-1P-E5-C-S4 18M-PO-1RD-E5-C-S4 18M-WS-7PB-B1-L
Text: Tubular Optical Sensors BOS 18M Technical Description Available Models Features Applications Available in the popular 18mm tubular housing, the BOS 18M optical sensor family provides additional durability by using an epoxy filled, metal housing. These sensors solve tough applications where environmental
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18M-WS-7PB-B1-L
880nm)
PU-03,
PU-05
BLS 18M-PS-1P-E5-C-S4
18M-PA-1PD-E5-C-S
Balluff bos 18m
18M-PA-1QB-E5-C-S4
BLS-18M-XX-1P-E5-L-S4
18M-PS-1P-E5-C-S4
BLS 18M-XX-1P-E5-L-S4
18M-PO-1P-E5-C-S4
18M-PO-1RD-E5-C-S4
18M-WS-7PB-B1-L
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350mA 220vac driver
Abstract: MP4000 220vac LED driver Offline High Brightness STD3NK60ZT4 marking BOs
Text: MP4000 Offline High Brightness White LED Driver Controller The Future of Analog IC Technology DESCRIPTION FEATURES The MP4000 is a high efficiency step-down converter designed for driving high brightness Light Emitting Diodes LEDs . • • • The MP4000 drives an external MOSFET in the
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MP4000
MP4000
300mV
MS-012,
350mA 220vac driver
220vac LED driver
Offline High Brightness
STD3NK60ZT4
marking BOs
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MP4000
Abstract: STD3NK60ZT4 MP4000DS HIGH POWER 1 WLED LED100V 220vac LED driver MP4000DS-LF-Z Offline High Brightness
Text: MP4000 Offline High Brightness White LED Driver Controller The Future of Analog IC Technology DESCRIPTION FEATURES The MP4000 is a high efficiency step-down converter designed for driving high brightness Light Emitting Diodes LEDs . • • • The MP4000 drives an external MOSFET in the
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MP4000
MP4000
300mV
MS-012,
STD3NK60ZT4
MP4000DS
HIGH POWER 1 WLED
LED100V
220vac LED driver
MP4000DS-LF-Z
Offline High Brightness
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mp4001
Abstract: No abstract text available
Text: MP4001 Universal Input High Brightness White LED Driver The Future of Analog IC Technology DESCRIPTION FEATURES The MP4001 is a high efficiency step-down converter designed for driving the high brightness Light Emitting Diodes LEDs . • • • • • •
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MP4001
MP4001
MS-012,
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MC74F158A
Abstract: ad11437
Text: MOTORQL% - s~MicOW~uc~OF% Order this data sheet by MC74F158&D —, ~ Mc74Fa 58A The MC7dF?53A is a high-speed quad Z-input multip[e~:er. !t seiects four bits of data Select and Enab!e inptJts. TilI? four buffered outfrom I~PJQsources using the comm,.n puts pres~nt the sel@cted data in the in\jerted form, The F158A can also generate any
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MC74F158
Mc74Fa
F158A
S0-16
MC74F158A
MC74F158A
ad11437
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE 16MQ50 16MQ60 i6.6A/50~60v FEATU R ES ° Hermetically Sealed Case ° High Reliability Device “Low Forward Power Loss, High Efficiency ° High Surge Capability » 30 Volts through 60 Volts Types Available + Dimensions in mm Inches
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16MQ50
16MQ60
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lm3i7
Abstract: BFD22 ic LM7812 LM3I7-220M Lti086 pi38a 2N3904D LM7924 BFD48 BYVI43-35M
Text: MilitaryAerospace Division C eram ic surface m ount devices and herm etic m etal packages T h e following L C C 2 - p a c k a g e d devices have been specifically designed to accommodate dual LCC2 4p LCC3 M edium -pow er L C C Hi Sir T Ó 63 ♦ T O I II Page 24
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IN4001CSMU
IN4003CSMD
60DCSM
222IA
2N2221DCSM
2N2222ADCSM
2N2222DCSM
2N2369ADCSM
2N2453D
2N2639DCSM
lm3i7
BFD22
ic LM7812
LM3I7-220M
Lti086
pi38a
2N3904D
LM7924
BFD48
BYVI43-35M
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diode mur
Abstract: 1640C A1W diode
Text: E MUR1620CT - MUR1660CT TAIWAN SEMICONDUCTOR RoHS 16.0 AMPS. Switchmode Power Rectifiers TQ-22QAB C O M P L IA N C E .ya,i iiy TTivTTi F e a tu re s ❖ <> 4❖ Ultrafast 35 and 60 Nanosecond Reoovery times 17 S’ C operating J u notion Tempc rature Popular TO-22D Package
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MUR1620CT
MUR1660CT
TQ-22QAB
O-22D
diode mur
1640C
A1W diode
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PDF
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Untitled
Abstract: No abstract text available
Text: inixYS £ — - . Thyristor Modules Thyristor/Diode Modules . . V DSM V DRM V V Version 1 B Version 8 B Version 8 B 900 1300 1500 1700 1900 800 1200 1400 1600 1800 MCC MCC MCC MCC MCC MCC MCC MCC MCC MCC MCD 72-08io8 B MCD 72-12io8 B MCD 72-14io8 B
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O-240
72-08io8
72-12io8
72-14io8
72-16i08
72-18io8B
72-08io1
72-12io1
72-14io1
72-16io1
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MUR1660
Abstract: 1620CT 1660CT diode MUR 120 diode mur oasi 1640CT MUR1620CT MUR1660CT mur1620
Text: E TAIWAN SEMICONDUCTOR M U R 1 6 2 0 C T - M U R 1 6 6 0 C T 16.0 AMPS. Switch mode Power Rectifiers tò RoHS IQ -220A B COMPLIANCE a •ami no iMn Mr.t i .‘ I - 1IIT1 . 'I a:;:^4i I F e a tu re s ❖ <> <5*- . 1 ^ . 1 VI I U ltrafast 35 and 60 N anosecond R eoovery tim es
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MUR1620CT
MUR1660CT
TQ-220AB
T0-220
MUR1660
1620CT
1660CT
diode MUR 120
diode mur
oasi
1640CT
MUR1660CT
mur1620
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IRFP350
Abstract: IRFP350FI 0DM5740 V435
Text: 7 c12,ì 2 3 7 *57 TYPE IRFP350 IRFP350FI • . ■ ■ . 0 DMS73T TS7 ■ SGTH SGS-THOMSON ;L[1OT *S IRFP350 IRFP350FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss R d S oii Id 400 V 400 V < 0.3 n < 0.3 n 16 A 10 A TYPICAL FtDS(on) = 0.21 £i
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QDM573tÃ
IRFP350
IRFP350FI
IRFP350FI
IRFP350/FI
0DM5740
V435
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SLD323
Abstract: 808 nm 100 mw SLD300 SLD323V SLD323V-1 SLD323V-2 SLD323V-21 SLD323V-24 SLD323V-25 SLD323V-3
Text: SONY SLD323V High Power Density 1 W Laser Diode Package Outiine_ Unit : mm Description The SLD323V is a high power, gain-guided laser diode produced by MOCVD m ethod*'. Compared to the R*r* SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be
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SLD323V
SLD323V
SLD300
600mVV
-101C
SLD323
808 nm 100 mw
SLD323V-1
SLD323V-2
SLD323V-21
SLD323V-24
SLD323V-25
SLD323V-3
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IRLZ20
Abstract: IRLZ24 DIODE S3V 08 S3V 8* Rectifier DIODE S3V J50 mosfet DIODE S3V 40 S3V 15 diode
Text: N-CHANNEL LOGIC LEVEL MOSFET IRLZ24/20 FEATURES • • • • • • • • Lower R d s o n Excellent voltage stability Fast switching speeds Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability
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IRLZ24/20
O-220
IRLZ24
IRLZ20
DIODE S3V 08
S3V 8* Rectifier
DIODE S3V
J50 mosfet
DIODE S3V 40
S3V 15 diode
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Untitled
Abstract: No abstract text available
Text: CM200HA-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 S iT lQ lB IGBTMOD H-Series Module 200 Amperes/1200 Volts Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists
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CM200HA-24H
Amperes/1200
135ns)
20-25kHz)
72T4bai
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250M
Abstract: IRFSZ30 IRFSZ34
Text: N-CHANNEL POWER MOSFETS IRFSZ34/30 FEATURES • • • • • • • Lower R ds <on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
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IRFSZ34/30
IRFSZ34
IRFSZ30
to-220f
7Tb4142
250M
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Untitled
Abstract: No abstract text available
Text: SIEMENS BSM150GB120DN2E3166 IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Enlarged diode area • Package with insulated metal base plate BSM150GB120DN2E3166 h 1200V 210A 111 Type Package Ordering Code HALF-BRIDGE 2
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BSM150GB120DN2E3166
C67076-A2112-A70
ID0fl020fl
023Sb05
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 334 SIPMOS Power Transistor • N channel • Enhancement mode V3I0&'58 >f é Ì • Avalanche-rated Pin 1 Pin 2 G Type BUZ 334 Vbs 600 V Pin 3 D S b ffDS on Package Ordering Code 12 A 0.5 n TO-218AA C67078-S3130-A2 Maximum Ratings Parameter
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O-218AA
C67078-S3130-A2
A235bG5
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Untitled
Abstract: No abstract text available
Text: International h ?r Rectifier HEXFET Power M O S F E T • • • • • • • • I 4655452 0015D34 *nb « I N R PD-9.386G IRFD210 INTERNATIONAL Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of Paralleling
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0015D34
IRFD210
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VQE 13E
Abstract: No abstract text available
Text: SIEMENS BSM150GB170DN2 E3166 IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Enlarged diode area • Package with insulated metal base plate • ^G on.min = Ohm Type BSM150GB170DN2 E3166 h Vcz 1700V 220A Package
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BSM150GB170DN2
E3166
C67070-A2709-A67
0235b05
VQE 13E
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PDF
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emitter phototransistor til 31
Abstract: n50a TRANSISTOR c 5521 D03SS23 optocoupler 450
Text: MCT2 J \ _ OPTOCOUPLER I— .T This product range is one of the industrial standards applied in the market. The current transfer ratio, isolation voltage and low saturation voltage comply to the specifications of the main part of the optocoupler market.
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E90700
0110b
804/VDE
86/HD195S4.
7Z94432
D03SS23
emitter phototransistor til 31
n50a
TRANSISTOR c 5521
optocoupler 450
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON &Mra [IL[l gT!®*S TDA7275A MOTOR SPEED REGULATOR ADVANCE DATA • ■ ■ ■ ■ EXCELLENT VERSATILITY IN USE HIGH OUTPUT CURRENT (up to 1.5 A LOW QUIESCENT CURRENT LOW REFERENCE VOLTAGE (1.32 V) EXCELLENT PARAMETERS STABILITY VER SUS AMBIENT TEMPERATURE
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TDA7275A
TDA7275A
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS TEMPFET BTS114A Features • • • • N channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab ^ < 5 = r > \ 12 Pin Type BTS114A Vm 50 V 1 2 3 G D S h ftoKcn Package Ordering Code
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BTS114A
O-220AB
C67078-S5000-A2
023SbDS
E3044
E3045A
C67078-S5000-A11
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diode c651
Abstract: No abstract text available
Text: HD74HC651 HD74HC652 # O c t a l B u s T r a n s c e i v e r s / R e g i s t e r s with i n v e r t e d 3 - s t a t e o u t p u t s # O c t a l B u s T r a n s c e i v e r s / R e g i s t e r s (w ith 3 - s t a t e o u t p u t s ) This device consists of bus transceiver circu its, D-type flip-
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HD74HC651
HD74HC652
HD74HC651,
diode c651
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PDF
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TDA7275A
Abstract: schematic diagram motor
Text: >7/ S G S -T U O M S O N TDA7275A ¡[L [I g ¥ ^ * S MOTOR SPEED REGULATOR A D V A N C E D A TA • ■ ■ ■ ■ EXCELLENT VERSATILITY IN USE HIGH OUTPUT CURRENT (up to 1.5 A LOW QUIESCENT CURRENT LOW REFERENCE VOLTAGE (1.32 V) EXCELLENT PARAMETERS STABILITY VER
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TDA7275A
TDA7275A
S-9665
schematic diagram motor
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PDF
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