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    DIODE BON Search Results

    DIODE BON Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE BON Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    optical source

    Abstract: Fabry-Perot 1550 nm Fabry-Perot 1550 nm butterfly Laser InP laser transmitter datasheet laser 1550 spectral laser 1550 nm laser transmitter 1550 nm TO56 laser TO-CAN
    Text: Fabry-Perot Laser Diode High-power 1550 nm laser diode Preliminary DESCRIPTION Quantum Photonics’ Fabry-Perot (FP) laser diode is based on a high-power InP ridge waveguide laser structure. Advanced epitaxial wafer growth techniques and die bonding processes enable high-power laser diode operation in the eye-safe 1550 nm wavelength


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    14-pin optical source Fabry-Perot 1550 nm Fabry-Perot 1550 nm butterfly Laser InP laser transmitter datasheet laser 1550 spectral laser 1550 nm laser transmitter 1550 nm TO56 laser TO-CAN PDF

    biconvex lens with focal length 1 m and diameter 25.4 mm

    Abstract: laser diode DVD 100mw DL-3147-011 laser diode toshiba 780nm 650nm laser diode 200mw TOLD9225M mitsubishi laser diode OPHIR pd200 collimated LED 670 nm DL3147-011
    Text: Laser Diodes, Optics, and Related Components - Optima Laser Diodes Laser Diode Mounting Kits Laser Diode Optics Glass Aspheric Lenses Plastic Aspheric Lenses Multi-element Lenses Diode Laser Modules OEM Diode Laser Modules Collimated Diode Lasers Optical Power


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    658nm ML1016R 685nm ML1012R 785nm ML64114R Revised11JUN99 biconvex lens with focal length 1 m and diameter 25.4 mm laser diode DVD 100mw DL-3147-011 laser diode toshiba 780nm 650nm laser diode 200mw TOLD9225M mitsubishi laser diode OPHIR pd200 collimated LED 670 nm DL3147-011 PDF

    pn junction diode structure

    Abstract: "Power Diode" smd 3a LM317 spice MOSFET HALF BRIDGE Power Supply AC TO DC5V 50 IGBT 60A spice model AC DC 60v 10amp 31DF2 S0D-123 ferrite transformer power for power supply atx what is THERMAL RUNAWAY IN RECTIFIER MOSFET
    Text: CONTENTS Diode is the basics power semiconductor 1 Structure, symbol, and basic nature of diode 1 Rectifier diode for general use, and fast recovery diode 2 Experiments to ascertain basic nature of diode — Forward and Reverse characteristics 2 Forward power loss and reverse power loss


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    PDF

    Diode Motorola 711 2N2905A

    Abstract: pin configuration transistor BC547 2N2222 BC237 2N555
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMAD130 MMAD1103 MMAD1105 MMAD1107 MMAD1109 Monolithic Diode Arrays Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching


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    MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 MV2103 Diode Motorola 711 2N2905A pin configuration transistor BC547 2N2222 BC237 2N555 PDF

    HSCH-9161

    Abstract: HSMS-2850 United Detector silicon diode
    Text: HSCH-9161 Zero Bias Beamlead Detector Diode Data Sheet Description Avago’s HSCH-9161 is a GaAs beamlead detector diode, fabricated using the modified barrier integrated diode MBID process[1]. This diode is designed for zero bias detecting applications at frequencies through


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    HSCH-9161 HSCH-9161 5988-5907EN 5988-6209EN March31, HSMS-2850 United Detector silicon diode PDF

    1gg5

    Abstract: HSCH-9161 AGILENT TECHNOLOGIES 9161 4009 w-band pn#2 hsch-9161 W-band diode GaAs Detector Diode
    Text: Agilent HSCH-9161 GaAs Detector Diode Data Sheet Description The HSCH-9161 is a discrete, beam lead, GaAs diode fabricated using the modified barrier integrated diode MBID process. Applications This diode is suitable for medium-low barrier, zero bias detector applications.The HSCH-9161


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    HSCH-9161 HSCH-9161 HSCH-9161/rev 1gg5 AGILENT TECHNOLOGIES 9161 4009 w-band pn#2 hsch-9161 W-band diode GaAs Detector Diode PDF

    zener diode

    Abstract: WT-Z108N
    Text: WT-Z108N Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to N-Type silicon Zener diode chip Device NO:WT-Z108N 2. Structure: 2-1 Planar type: Silicon Diode


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    WT-Z108N 137um) zener diode WT-Z108N PDF

    Untitled

    Abstract: No abstract text available
    Text: Linear Models for Diode Surface Mount Packages Application Note 1124 Introduction When linear or non-linear analyses are performed on diode circuits, both the diode chip and its package must be accurately modeled. The diode chip or die itself may be modeled using SPICE parameters,


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    OT-23 OT323 OT-23 OT-323 OT-323 OT-143 OT-143 OT-363 OT-363 PDF

    LL HP

    Abstract: chip die hp SOT 23 Package equivalent
    Text: Linear Models for Diode Surface Mount Packages Application Note 1124 Introduction When linear or non-linear analyses are performed on diode circuits, both the diode chip and its package must be accurately modeled. The diode chip or die itself may be modeled using SPICE parameters,


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    OT-23 OT323 OT-143 OT-363 OT-363 5966-0399E LL HP chip die hp SOT 23 Package equivalent PDF

    Untitled

    Abstract: No abstract text available
    Text: WT-Z108P Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to P-Type silicon Zener diode chip Device NO:WT-Z108P 2. Structure: 2-1 Planar type: Silicon Diode


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    WT-Z108P PDF

    ZENER Vr 3V

    Abstract: Zener Diode 3v zener- diode WT-Z111N
    Text: WT-Z111N Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to N-Type silicon Zener diode chip Device NO:WT-Z111N 2. Structure: 2-1 Planar type: Silicon Diode


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    WT-Z111N 160um) ZENER Vr 3V Zener Diode 3v zener- diode WT-Z111N PDF

    Untitled

    Abstract: No abstract text available
    Text: WT-Z108N-4 Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to N-Type silicon Zener diode chip Device NO:WT-Z108N-4 2. Structure: 2-1 Planar type: Silicon Diode


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    WT-Z108N-4 137um) PDF

    3.2 v zener diode

    Abstract: No abstract text available
    Text: WT-Z108P-AU Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to P-Type silicon Zener diode chip Device NO:WT-Z108P-AU 2. Structure: 2-1 Planar type: Silicon Diode


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    WT-Z108P-AU 3.2 v zener diode PDF

    um 54 diode

    Abstract: zener diode chip 3.2 v zener diode
    Text: WT-Z108N-AU Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to N-Type silicon Zener diode chip Device NO:WT-Z108N-AU 2. Structure: 2-1 Planar type: Silicon Diode


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    WT-Z108N-AU 137um) um 54 diode zener diode chip 3.2 v zener diode PDF

    HSCH-9161

    Abstract: United Detector silicon diode application note 979
    Text: HSCH-9161 Zero Bias Beamlead Detector Diode Data Sheet Description Features Avago’s HSCH-9161 is a GaAs beamlead detector diode, fabricated using the modified barrier integrated diode MBID process[1]. This diode is designed for zero bias detecting applications at frequencies through 110 GHz. It


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    HSCH-9161 HSCH-9161 5988-6209EN AV02-3625EN United Detector silicon diode application note 979 PDF

    Germanium diode

    Abstract: 5 amp diode rectifiers Germanium Diode OA91 aa117 diode diode 2 Amp rectifier diode 2 Amp zener diode DIODE 1N649 germanium rectifier diode OA95 diode
    Text: Index f P art N Part Number Description 1N34A 1N38A 1N60A 1N100A Gold Gold Gold Gold 1N270 Gold Bonded Germ anium Diode Gold Bonded Germanium Diode Gold Bonded Germanium Diode Low Leakage Silicon Diodes Low Leakage Silicon Diodes Low Leakage Silicon Diodes


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    1N34A 1N38A 1N60A 1N100A 1N270 1N276 1N277 1N456 1N459 1N456A Germanium diode 5 amp diode rectifiers Germanium Diode OA91 aa117 diode diode 2 Amp rectifier diode 2 Amp zener diode DIODE 1N649 germanium rectifier diode OA95 diode PDF

    22BW3

    Abstract: E12-70 general electric
    Text: — PRODUCT INFORMATION — 22BW3 Compactron Diode TUBES Page 1 FOR TV DAMPING DIODE APPLICATIONS • DIFFUSION BONDED CATHODE • 5000 VOLTS DC • 175 MILLIAMPERES DC The 22BW3 is a compactron, single heater-cathode type diode intended for service as the


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    22BW3 22BW3 E12-70 general electric PDF

    6cj3

    Abstract: 6cj3 tube general electric
    Text: — PRODUCT INFORMATION — E L E C T R O N IC mmmmm IN A C T IO N — w> TUBES Page 1 6CJ3 Diode FOR TV DAMPING DIODE APPLICATIONS • COLOR TV TYPE • DIFFUSION BONDED CATHODE • LOW TUBE DROP • 5000 VOLTS DC • 350 MILLIAMPERES DC The 6CJ3 is a single heater-cathode type diode intended for service as the damping diode


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    687-inch 6cj3 6cj3 tube general electric PDF

    JAN 1N4500

    Abstract: 1N4500
    Text: COMPUTER DIODE JAN & JANTX 1N4500 500m A Switching Diode FEATU RES D ESCR IPTIO N • • • • • This device is a fast sw itching, high con­ ductance diode for military, space, high rel and other systems. M etallurgical Bond Qualified to MIL-S-19500/403


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    500mA 1N4500 MIL-S-19500/403 DO-35 80Vdc 75Vpk 300mAdc JAN 1N4500 1N4500 PDF

    6CG3

    Abstract: 6CG3 tube E12-70 general electric
    Text: — PRODUCT INFORMATION — Page 1 6CG3 Compactron Diode TUBES • COLOR TV TYPE FOR TV DAMPING DIODE APPLICATIONS • LOW TUBE DROP • 5000 VOLTS DC • DIFFUSION BONDED CATHODE • 350 MILLIAMPERES DC The 6CG3 is a compactron containing a single heater-cathode type diode. It is intended


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    PDF

    JAN 1N4500

    Abstract: No abstract text available
    Text: COMPUTER DIODE 1N4500, JAN & JANTX 1N4500 500mA Switching Diode FEATURES DESCRIPTION • • • • T h is d evice ¡s a fast sw itching, high co n ­ d u cta n ce diode for m ilitary, space, high rel and other systems. Metallurgical Bond Qualified to MIL-S-19500/403


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    500mA 1N4500, 1N4500 MIL-S-19500/403 DO-35 80Vdc 75Vpk 300mAdc 20mAdc 300mAde JAN 1N4500 PDF

    19de3

    Abstract: E12-70 Scans-0017327 general electric K-55611-TD298-1A
    Text: — PRODUCT INFORMATION — Page 1 Compactron Diode wees FOR TV DAMPING DIODE APPLICATIONS COLOR TV TYPE • DIFFUSION BONDED CATHODE • 350 MILLIAMPERES DC • LOW TUBE DROP 5000 VOLTS DC The 19DE3 is a compactron containing a s in g le heater-cathode type diode. It is intended for service as


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    19DE3 K-55611-TD298-1A E12-70 Scans-0017327 general electric K-55611-TD298-1A PDF

    TD-101

    Abstract: TD101 12FX 6bw3 E12-70 R-5561 general electric r5561
    Text: — PRODUCT INFORMATION — Page 1 6BW3 Compactron Diode TUBES • COLOR TV TYPE FOR TV DAMPING DIODE APPLICATIONS ■ DIFFUSION BONDED CATHODE ■ 5000 VOLTS DC ■ 175 MILLIAMPERES DC The 6BW 3 is a compactron containing a s in g le heater-cathode type diode. It is intended for s e rvice as the


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    R-5561 1-TD101 TD-101 TD101 12FX 6bw3 E12-70 general electric r5561 PDF

    E12-70

    Abstract: 34ce3 Scans-0017402 general electric
    Text: — PRODUCT INFORMATION — 34CE3 Compactron Diode TUBES • COLOR TV TYPE Page 1 FOR TV DAMPING DIODE APPLICATIONS ■ LOW TUBE DROP ■ 5000 VOLTS DC ■ DIFFUSION BONDED CATHODE ■ 350 MILLIAMPERES DC The 34CE3 is a compactron containing a sin g le heater-cathode type diode. It is intended for se rvice as the


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    34CE3 K-556 11-TD3S5-1 E12-70 Scans-0017402 general electric PDF