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    DIODE BAY 74 Search Results

    DIODE BAY 74 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE BAY 74 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    power supply IRF830 APPLICATION

    Abstract: IRL830T IRL830 BAY 45 BAY 61 MOSFET 400V TO-220 IRF830 IRL830S Diode BAY 18 Diode BAY 45
    Text: Bay Linear Linear Excellence IRF830 POWER MOSFET Advance Information Description Features The Bay Linear MOSFET’s provide the designers with the best combination of fast switching, ruggedized device design, low 0n-resistance and low cost-effectiveness. The TO-220 is offered in a 3-pin is universally preferred for all


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    IRF830 O-220 power supply IRF830 APPLICATION IRL830T IRL830 BAY 45 BAY 61 MOSFET 400V TO-220 IRF830 IRL830S Diode BAY 18 Diode BAY 45 PDF

    Diode BAY 55

    Abstract: Bay Linear 4N600 4N600S 4N600T 4N6003600 DSA0083437
    Text: Bay Linear Inspire the Linear Power N-Channel Field Effect Transistor Description 4N600 3600 Features • The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for high voltage applications


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    4N600 O-220 Diode BAY 55 Bay Linear 4N600S 4N600T 4N6003600 DSA0083437 PDF

    Untitled

    Abstract: No abstract text available
    Text: Bay Linear Inspire the Linear Power LM4041 Precision Micro power Voltage Reference Description Features The LM4041 is a two-terminal, temperature compensated, band-gap voltage reference, which provides a fixed 1.25V output for input currents between 500 µA to 5mA. The bandgap voltage 1.225V is


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    LM4041 LM4041 OT-23, PDF

    B4041B

    Abstract: B4041 LM4041 B4041A-2 Diode BAY 74
    Text: Bay Linear Inspire the Linear Power B4041 Precision Micro power Voltage Reference Description Features The B4041 is a two-terminal, temperature compensated, band-gap voltage reference, which provides a fixed 1.25V output for input currents between 500 µA to


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    B4041 B4041 OT-23, B4041B LM4041 B4041A-2 Diode BAY 74 PDF

    relay rd3

    Abstract: RELAY RZ2 ABB transformer rxmb1 ABB rxtp 18 abb rxmb1 BUSBAR calculation datasheet REB103 RELAY RZ2 5 ABB RXTUG 22H
    Text: Bus differential relay REB 103 3-phase 1MRK 505 007-BEN SE970146 Page 1 Issued: September 2006 Revision: C Data subject to change without notice Features • Percentage restrained differential relay for phase-to-phase and phase-to-earth faults. • Very high E/F-sensitivity of the differential


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    007-BEN SE970146) 003-BEN 001-BEN 007-UEN 015-BEN 016-BEN 004-BEN SE-721 relay rd3 RELAY RZ2 ABB transformer rxmb1 ABB rxtp 18 abb rxmb1 BUSBAR calculation datasheet REB103 RELAY RZ2 5 ABB RXTUG 22H PDF

    WATKINS JOHNSON mixer

    Abstract: vari-l 1785 TETRA etch magnum microwave Magnum Microwave mixer BD256 WATKINS JOHNSON design of Circular Patch Antenna in ISM Band Avantek mixer BPD5-0767-072SA
    Text: There is a new leader and source for your RF & microwave systems and components … Spectrum Microwave. Combining the people, products and technologies from FSY Microwave, Salisbury Engineering, Q-Bit, Magnum Microwave, Radian Technologies and Amplifonix into a single


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    PDF

    cafs-220

    Abstract: Thermotron WP-499-THCM2-705 FD-235HF CAFS-220-5M TEAC FLOPPY ST39140A testo anemometer thermalcote ST39140
    Text: Thermal Airflow Considerations SECC2 OLGA HEAT SINK COOLING IN AN ATX CHASSIS February 1999 Order Number: 245139-001 Thermal Airflow Considerations Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any


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    schematic diagram inverter 12v to 24v 30a

    Abstract: inverter 5kva circuit diagram LB1542 2kva inverter circuit diagram dc to ac inverter schematic diagram inverter 5kva digitrip 310 time curve sim 900A ac Inverter schematics 10 kw Allen-Bradley 1336
    Text: Allen-Bradley Parallel DC Bus Supply Configurations Using Bulletin 2364E NRUs and Bulletin 2364F RGUs Bulletin 2364P User Manual Important User Information Solid-State equipment has operational characteristics differing from those of electromechanical equipment. “Safety Guidelines for the


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    2364E 2364F 2364P 2364P-5 schematic diagram inverter 12v to 24v 30a inverter 5kva circuit diagram LB1542 2kva inverter circuit diagram dc to ac inverter schematic diagram inverter 5kva digitrip 310 time curve sim 900A ac Inverter schematics 10 kw Allen-Bradley 1336 PDF

    WP91147L8BSR

    Abstract: FLUKE 8060A Fluke 8060A service manual Fluke 8060A Multimeter calibration manual SHARP KS F102 TAG C7 Thyristor TRIACS EQUIVALENT LIST FLUKE 8060a manual FLUKE Clamp meter diagram J87132B-2
    Text: Product Manual J87132B-2 Select Code 169-792-100 Comcode 107940108 Issue 3 March 1998 Lucent Technologies 140-Volt, 140-Ampere, 60-Hertz Ferroresonant Rectifier Notice: Every effort was made to ensure that the information in this document was complete and accurate at the time of printing.


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    J87132B-2 140-Volt, 140-Ampere, 60-Hertz 40V/140A WP91147L8BSR FLUKE 8060A Fluke 8060A service manual Fluke 8060A Multimeter calibration manual SHARP KS F102 TAG C7 Thyristor TRIACS EQUIVALENT LIST FLUKE 8060a manual FLUKE Clamp meter diagram J87132B-2 PDF

    ASCOM 48V 150A

    Abstract: KS-20472-L1S ASCOM rectifier ED83119 ed83119-30 ED83246-30 KS-22089 KS-20472 h569-429 welding rectifier schematic
    Text: Product Manual H569-429 Select Code 167-792-120 Comcode 107966541 Issue 2 June 1998 Lucent Technologies 600-Ampere, 140-Volt Galaxy Control and Distribution Bay for New and Retrofit 4ESS Applications Notice: Every effort was made to ensure that the information in this


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    H569-429 600-Ampere, 140-Volt H569-429 ASCOM 48V 150A KS-20472-L1S ASCOM rectifier ED83119 ed83119-30 ED83246-30 KS-22089 KS-20472 welding rectifier schematic PDF

    scsi cable adapter

    Abstract: ibm RS/6000 software offline UPS optical disk drive SA38-0569-01 EIA-232 SA38-0569
    Text: RS/6000 Enterprise Server Model F80 IBM Installation Guide SA38-0569-01 Second Edition June 2000 Before using this information and the product it supports, read the information in “Safety Notices” on page vii, Appendix B, “Environmental Notices” on page 101, and Appendix C,


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    RS/6000 SA38-0569-01 H6DS-9561 09P1324 9P1324 scsi cable adapter ibm RS/6000 software offline UPS optical disk drive SA38-0569-01 EIA-232 SA38-0569 PDF

    ADE-208-747B

    Abstract: 2SK3151 2SK3151-E PRSS0004ZE-A SC-65
    Text: 2SK3151 Silicon N Channel MOS FET High Speed Power Switching REJ03G1076-0400 Previous: ADE-208-747B Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS (on) = 11.5 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source


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    2SK3151 REJ03G1076-0400 ADE-208-747B) PRSS0004ZE-A ADE-208-747B 2SK3151 2SK3151-E PRSS0004ZE-A SC-65 PDF

    2SK3148

    Abstract: 2SK3148-E PRSS0003AD-A
    Text: 2SK3148 Silicon N Channel MOS FET High Speed Power Switching REJ03G1073-0200 Previous: ADE-208-748 Rev.2.00 Sep 07, 2005 Features • Low on-resistance RDS =45 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline


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    2SK3148 REJ03G1073-0200 ADE-208-748) PRSS0003AD-A O-220FM) 2SK3148 2SK3148-E PRSS0003AD-A PDF

    2SK3177

    Abstract: 2SK3177-E PRSS0003AD-A 2SK317
    Text: 2SK3177 Silicon N Channel MOS FET High Speed Power Switching REJ03G1089-0300 Previous: ADE-208-745A Rev.3.00 Sep 07, 2005 Features • Low on-resistance RDS =90mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline


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    2SK3177 REJ03G1089-0300 ADE-208-745A) PRSS0003AD-A O-220FM) 2SK3177 2SK3177-E PRSS0003AD-A 2SK317 PDF

    diode rj

    Abstract: RJ 22 diode
    Text: SK35DGDL12T4 T CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter,Chopper OJ:9 <J <JZ; OH:9 =' P BQ RJA -%2&'' ,.8& */'& '5& /E/&1 =' P BQ UVSW RJ <JZ;P C F <J%,+A .5 P @ +' =¥ Diode - Inverter,Chopper SEMITOP 4 3-phase bridge rectifier +


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    SK35DGDL12T4 diode rj RJ 22 diode PDF

    je 3055

    Abstract: RAYTHEON RMWM38001 RMWP38001
    Text: RMWM38001 38 GHz Mixer MMIC PRODUCT INFORMATION Description Features The RMWM38001 is a 38 GHz Mixer designed to be used in point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. In conjunction with other Raytheon amplifiers,


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    RMWM38001 RMWM38001 je 3055 RAYTHEON RMWP38001 PDF

    Diode BAY 96

    Abstract: Diode BAY 55 BAY67 RF-45 IR diodes TFK 4 TFK diode TFK diodes DIODE R 67
    Text: BAY 67 Silizium-Diffusions-Diode Silicon diffusion diode Anwendungen: HF-Schaltdicide Applications: Switching RF signals Abmessungen in mm Dimensions in mm g 2 ,6 . II— 11 0 0 ,5 5 — |l- — - H I — •— —-2 6 -► m -7 .2 -— —- 2 6 - -


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    -26-J Diode BAY 96 Diode BAY 55 BAY67 RF-45 IR diodes TFK 4 TFK diode TFK diodes DIODE R 67 PDF

    Diode BAY 54

    Abstract: No abstract text available
    Text: Te m ic BAY 135 TELEFUNKEN Semiconductors Silicon Planar Diode Features • Very lo w reverse current Applications P rotection circu its, d e la y circu its Absolute Maximum Ratings Tj = 2 5 °C Param eter Test C onditions Peak reverse voltage, non repetitive


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    Diode BAY 46

    Abstract: Diode BAY 80 Diode BAY 74 Diode BAY 45 Diode BAY 19 diode BAW55 BAY 73 diode 1N3595 Diode BAY 21 Diode BAY 41
    Text: general purpose and switching diode selector guide guide de sélection diodes de commutation et usage général tho m so n -csf Case \> F A V 200.225 mA 100.150 m A 50.90 m A 400 m A Vr ( V » \ 10 J €£043 1N456 25 1N 456 A W 449)1 1 30 rtm a a


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    1N456 BAW21A SFD79 CB-26) baw55 CB-127 CB-127. Diode BAY 46 Diode BAY 80 Diode BAY 74 Diode BAY 45 Diode BAY 19 diode BAW55 BAY 73 diode 1N3595 Diode BAY 21 Diode BAY 41 PDF

    Diode BAY 54

    Abstract: tfk 341 Diode BAY 74 TFK 68 diode Diode BAY 45 TFK 341 T 74340 TFK 101 bay 68 diode Diode BAY 68
    Text: BAY 68 - BAY 69 Silizium-Epitaxial-Planar-Dioden Silicon epitaxial planar diodes Anwendungen: Sehr schnelle Schalter Applications: Very fast switches Abmessungen in mm Dimensions in mm 01.9 KATHODE CATHODE Normgehäuse Case 54 A 2 DIN 41880 JEDEC DO 35 Gewicht • Weight


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    Diode BAY 74

    Abstract: BAY74 BAV74 74 MARKING
    Text: SIEM EN S Silicon Switching Diode Array BAV 74 • For high-speed switching • Common cathode Type Marking Ordering Code tape and reel BAV 74 JAs Q62702-A693 Pin Configuration Package1) 3 SOT-23 IK o CHAO7004 Maximum Ratings per Diode Parameter Symbol Values


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    Q62702-A693 OT-23 CHAO7004 H800069 BAV74 Diode BAY 74 BAY74 BAV74 74 MARKING PDF

    BA100 diode

    Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
    Text: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any


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    A4/10 A5/62 A5/105 A1000 AA100 AA110 AA111 AA112 AA113 AA114 BA100 diode BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17 PDF

    AC125K

    Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
    Text: TUNGSRAM 1 ELECTRON TUBES AND SEMI­ CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T


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    76665N 76889N MA748PC MA709PC jA710PC A711PC iA712PC A723PC HA741PC A747PC AC125K 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram PDF

    FD6666 diode

    Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
    Text: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5


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    A4/10 A5/62 A5/105 A1000 AA100 AA110 AA111 AA112 AA113 AA114 FD6666 diode diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82 PDF