Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    4N600T Search Results

    4N600T Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    4N600T Bay Linear 600V 4.0A N-channel field effect transistor Original PDF

    4N600T Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Diode BAY 55

    Abstract: Bay Linear 4N600 4N600S 4N600T 4N6003600 DSA0083437
    Text: Bay Linear Inspire the Linear Power N-Channel Field Effect Transistor Description 4N600 3600 Features • The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for high voltage applications


    Original
    4N600 O-220 Diode BAY 55 Bay Linear 4N600S 4N600T 4N6003600 DSA0083437 PDF