Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DIODE BAS 21 Search Results

    DIODE BAS 21 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE BAS 21 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    a2 marking

    Abstract: Q62702-A1066 Marking Code to on semiconductor 720
    Text: SIEMENS Silicon Schottky Diode BAS 40W • General-purpose diodes for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing Type BAS 40-04W BAS 40-05W BAS 40-06W Ordering Code tape and reel 1 2 3 Q62702-A1065


    OCR Scan
    Q62702-A1065 Q62702-A1066 Q62702-A1067 0-04W 0-05W 0-06W OT-323 EHD07I67 a2 marking Marking Code to on semiconductor 720 PDF

    Untitled

    Abstract: No abstract text available
    Text: BAS 21-03W Silicon Switching Diode Preliminary data 2 • For high-speed switching applications 1 • High breakdown voltage VPS05176 Type Marking Pin Configuration Package BAS 21-03W D 1=C SOD-323 2=A Maximum Ratings Parameter Symbol Diode reverse voltage


    Original
    1-03W VPS05176 OD-323 EHB00028 EHB00029 Oct-07-1999 PDF

    Untitled

    Abstract: No abstract text available
    Text: BAS 21-03W Silicon Switching Diode Preliminary data 2  For high-speed switching applications 1  High breakdown voltage VPS05176 Type Marking Pin Configuration Package BAS 21-03W D 1=C SOD-323 2=A Maximum Ratings Parameter Symbol Diode reverse voltage VR


    Original
    1-03W VPS05176 OD-323 EHB00028 EHB00029 Mar-02-2001 PDF

    Q62702-A77

    Abstract: EHA07008
    Text: SIEMENS Silicon Switching Diode Array BAS 28 • For high-speed switching • Electrically insulated diodes Type Marking Ordering Code tape and reel BAS 28 JTs Q62702-A77 Pin Configuration * Package1) 1 SOT-143 r ^ i o- pH-° 3 i o 2 0 - ^ - O


    OCR Scan
    Q62702-A77 EHA07008 OT-143 Q62702-A77 EHA07008 PDF

    Untitled

    Abstract: No abstract text available
    Text: BAS 19 . 21 Surface Mount Silicon Planar Small-Signal Diode Silizium-Planar-Diode für die Oberflächenmontage Nominal current – Nennstrom 200 mA Repetitive peak reverse voltage Periodische Spitzensperrspannung 85 V Plastic case Kunststoffgehäuse SOT-23


    Original
    OT-23 O-236) 25iterplatte 150/C tter\bas21 PDF

    SC74

    Abstract: JSs diode
    Text: BAS 21U Silicon Switching Diode Array  For high-speed switching applications 5 4 6  Internal galvanic isolated diodes in one package 3 C1 C2 C3 6 5 4 2 1 VPW09197 1 2 3 A1 A2 A3 EHA07291 Type Marking BAS 21U JSs Pin Configuration Package 1=A1 2=A2 3=A3 4=C3 5=C2 6=C1 SC-74


    Original
    VPW09197 EHA07291 SC-74 Apr-16-1999 EHB00029 EHB00027 SC74 JSs diode PDF

    Q62702-A3468

    Abstract: VPS05604
    Text: BAS 70-04S Silicon Schottky Diode Array 4 • General-purpose diode for high-speed switching 5 • Circuit protection 6 • Voltage clamping • High-level detecting and mixing 2 1 3 VPS05604 ESD: Electrostatic discharge sensitive device, observe handling precautions!


    Original
    70-04S VPS05604 Q62702-A3468 OT-363 Sep-07-1998 Q62702-A3468 VPS05604 PDF

    Untitled

    Abstract: No abstract text available
    Text: LASERS & MATERIAL PROCESSING I OPTICAL SYSTEMS I INDUSTRIAL METROLOGY I TRAFFIC SOLUTIONS I DEFENSE & CIVIL SYSTEMS Single Emitter Diode Lasers cw, passively cooled JOLD-8-BAS-1E Design 215712124 Features: Applications: • High optical output power of 8 W cw


    Original
    PDF

    Q62702A1072

    Abstract: BAS170W
    Text: SIEMENS BAS 170W Silicon Schottky Diode • • • • • General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing Small package SOD-323 ESP: Electrostastic discharge sensitive device, observe handlirig precautions!


    OCR Scan
    OD-323 Q62702-A1072 Q62702A1072 BAS170W PDF

    SOD323 ESD

    Abstract: Q62702-A1072 BAS170W
    Text: BAS 170W Silicon Schottky Diode l General-purpose diodes for high-speed switching l Circuit protection l Voltage clamping l High-level detecting and mixing l Small package SOD-323 ESD: Electrostastic discharge sensitive device, observe handling precautions!


    Original
    OD-323 Q62702-A1072 SOD323 ESD Q62702-A1072 BAS170W PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BAS 170W Silicon Schottky Diode • • • • • General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing Small package SOD-323 ESP: Electrostastic discharge sensitive device, observe handling précautions!


    OCR Scan
    OD-323 BAS170W Q62702-A1072 53SbDS D1ED353 flE35bOS G120324 fl535b05 PDF

    MARKING 74s

    Abstract: PF 7004S
    Text: SIEMENS BAS 70-04S Silicon Schottky Diode Array 4 • General-purpose diode for high-speed switching 5 • Circuit protection • Voltage clamping • High-level detecting and mixing n y W C 1/A 2 C2 R n fi è 3 2 A1 1 VPS05604 ESD: Electrostatic discharge sensitive device, observe handling precautions!


    OCR Scan
    70-04S VPS05604 70-04S Q62702-A3468 OT-363 MARKING 74s PF 7004S PDF

    C4 Package

    Abstract: VPS05604 diode array MARKING A3
    Text: BAS 70-04S Silicon Schottky Diode Array 4 • General-purpose diode for high-speed switching 5 6 • Circuit protection • Voltage clamping • High-level detecting and mixing 2 C1/A2 C3 A4 6 5 4 D2 D1 3 1 VPS05604 D4 D3 1 2 3 A1 C2 A3/C4 EHA07464 ESD: Electrostatic discharge sensitive device, observe handling precautions!


    Original
    70-04S VPS05604 EHA07464 OT-363 Oct-07-1999 C4 Package VPS05604 diode array MARKING A3 PDF

    Untitled

    Abstract: No abstract text available
    Text: PLESSEY SEMICOND/DISCRETE 03 DE J 7 2 2 0 5 3 3 □oDbSbb □ I BAS 19 B AS20 BAS21 High speed switching diode - ¿3-0f - A B S O LU T E M A X IM U M RATINGS Parameter Symbol B A S 19 BAS20 B A S 21 Continuous reverse voltage Vr 100 150 200 V Repetitive peak reverse voltage


    OCR Scan
    BAS21 BAS20 BAS21 A7220533 0AS19/O 100ns PDF

    BAS 20 SOT23

    Abstract: DIODE BAS 21 sot-23 JSs
    Text: BAS 19 . BAS 21 Silicon Switching Diodes 3  High-speed, high-voltage switching applications 2 1 VPS05161 1 3 EHA07002 Type Marking Pin Configuration Package BAS 19 JPs 1=A 2 = n.c. 3=C SOT-23 BAS 20 JRs 1=A 2 = n.c. 3=C SOT-23 BAS 21 JSs 1=A 2 = n.c. 3=C


    Original
    VPS05161 EHA07002 OT-23 EHB00032 Oct-07-1999 BAS 20 SOT23 DIODE BAS 21 sot-23 JSs PDF

    marking JSs

    Abstract: bas21 DIODE BAS JS v BAS 20 SOT23 Q62702-A113 DIODE BAS JS JSs sot23 Q62702-A79 SOT JPs Q62702-A95
    Text: Silicon Switching Diodes ● BAS 19 … BAS 21 High-speed, high-voltage switch Type Marking Ordering Code tape and reel BAS 19 BAS 20 BAS 21 JPs JRs JSs Q62702-A95 Q62702-A113 Q62702-A79 Maximum Ratings Parameter Pin Configuration Package1) SOT-23 Symbol


    Original
    Q62702-A95 Q62702-A113 Q62702-A79 OT-23 marking JSs bas21 DIODE BAS JS v BAS 20 SOT23 Q62702-A113 DIODE BAS JS JSs sot23 Q62702-A79 SOT JPs Q62702-A95 PDF

    Untitled

    Abstract: No abstract text available
    Text: Silicon Switching Diodes ● BAS 19 … BAS 21 High-speed, high-voltage switch Type Marking Ordering Code tape and reel BAS 19 BAS 20 BAS 21 JPs JRs JSs Q62702-A95 Q62702-A113 Q62702-A79 Maximum Ratings Parameter Pin Configuration Package1) SOT-23 Symbol


    Original
    Q62702-A95 Q62702-A113 Q62702-A79 OT-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: irr BAS 19 BAS 21 Silicon Switching Diodes 32E D • Ö 23 b32 0 QQlb5Q2 3 M S I P SIEMEN S/ SPCLi SEMICONDS # High-speed, high-voltage switch Type Marking BAS 19 BAS 20 BAS 21 JP JR JS Ordering code for versions in bulk Q62702-A242 Q62702-A707 Q62702-A708


    OCR Scan
    Q62702-A242 Q62702-A707 Q62702-A708 Q62702-A95 Q62702-A113 Q62702-A79 3AS19 fl23b320 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Silicon Switching Diodes BAS 19 . BAS 21 • High-speed, high-voltage switch Type M arking O rdering Code tape and reel BAS 19 BAS 20 BAS 21 JPs JRs JSs Q62702-A95 Q62702-A113 Q62702-A79 Pin C onfigu ratio n Package1) 1 r^ i 3 o-^ 1 -o


    OCR Scan
    Q62702-A95 Q62702-A113 Q62702-A79 OT-23 EHA07002 EHB0CO26 EHB00031 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Silicon Switching Diodes BAS 19 . BAS 21 • High-speed, high-voltage switch T yp e M arking O rdering C o d e tape and reel B A S 19 B A S 20 BAS 21 JPs JR s JSs Q62702-A95 Q62702-A113 Q62702-A79 Pin Configuration P a ck a g e1» 1-^ IsJ-0


    OCR Scan
    Q62702-A95 Q62702-A113 Q62702-A79 OT-23 EH600026 fl0002fl CHB00031 PDF

    BAY99

    Abstract: BAW56 Diode BAV99 SOT23 BAV70 BAY70 3PIR BAS16 BAV99 MJ marking sot23 LFL 2.25
    Text: Surface M o u n t S w itching Diode SW ITCH IN G DIODE 200-215m AM PERRES 70-75 VOLTS F eatu res: *Low C urrent Leakage *Low Forward Voltage "Reverse Recover Tim e T r r* 6 n s *S m all O utline Surface M ount SOT-23 Package SOT-23 O u tlin e Dimensions unit:mm


    OCR Scan
    OT-23 BAV70 BAW56 200-215m OT-23 B\W54> BAY99 Diode BAV99 SOT23 BAY70 3PIR BAS16 BAV99 MJ marking sot23 LFL 2.25 PDF

    diodes b

    Abstract: AS21
    Text: Silicon Switching Diodes • B AS 19 B AS 21 High-speed, high-voltage switch Type Marking Ordering code for versions in bulk Ordering code for versions on 8 mm-tape Package B A S 19 B A S 20 B A S 21 JP JR JS Q62702-A242 Q62702-A707 Q62702-A708 Q62702-A95


    OCR Scan
    Q62702-A242 Q62702-A707 Q62702-A708 Q62702-A95 Q62702-A113 Q62702-A79 3AS19 diodes b AS21 PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS GMTâ SlnlEET BAS29; BAS31; BAS35 General purpose controlled avalanche double diodes Product specification Supersedes data of 1996 Sep 10 Philips Semiconductors 1999 May 21 PHILIPS Philips Semiconductors Product specification General purpose controlled avalanche


    OCR Scan
    BAS29; BAS31; BAS35 BAS31 BAS35 BAS29 115002/00/03/pp12 PDF

    C20 diode, TO

    Abstract: 10 35 DIODE diode 5V6 DIODE 748 DIODE zener diode c20 diode zener c2 6 FMMD2837 C2 6 zener diode c20 diode
    Text: SOT-23 TR A N S IS T O R S & D IO D ES SILICON ABRIJPT TUNER D ODES Type FMMV2101 FM M V2102 FM M V 2103 F M M V 2104 F M M V 2105 FM M V 2106 FM M V 2107 FM M V 2108 F M M V 2109 Reverse breakdown Voltage V R Volts max. 30 30 30 30 30 30 30 30 30 Nominal capacitance


    OCR Scan
    OT-23 C2/C20 50MHz FMMV2101 FMMV2102 FMMV2103 FMMV2104 FMMV2105 FMMV2106 FMMV2107 C20 diode, TO 10 35 DIODE diode 5V6 DIODE 748 DIODE zener diode c20 diode zener c2 6 FMMD2837 C2 6 zener diode c20 diode PDF