Untitled
Abstract: No abstract text available
Text: BAS 21-03W Silicon Switching Diode Preliminary data 2 • For high-speed switching applications 1 • High breakdown voltage VPS05176 Type Marking Pin Configuration Package BAS 21-03W D 1=C SOD-323 2=A Maximum Ratings Parameter Symbol Diode reverse voltage
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1-03W
VPS05176
OD-323
EHB00028
EHB00029
Oct-07-1999
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Untitled
Abstract: No abstract text available
Text: BAS 21-03W Silicon Switching Diode Preliminary data 2 For high-speed switching applications 1 High breakdown voltage VPS05176 Type Marking Pin Configuration Package BAS 21-03W D 1=C SOD-323 2=A Maximum Ratings Parameter Symbol Diode reverse voltage VR
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Original
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PDF
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1-03W
VPS05176
OD-323
EHB00028
EHB00029
Mar-02-2001
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Untitled
Abstract: No abstract text available
Text: BAS 19 . 21 Surface Mount Silicon Planar Small-Signal Diode Silizium-Planar-Diode für die Oberflächenmontage Nominal current – Nennstrom 200 mA Repetitive peak reverse voltage Periodische Spitzensperrspannung 85 V Plastic case Kunststoffgehäuse SOT-23
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PDF
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OT-23
O-236)
25iterplatte
150/C
tter\bas21
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SC74
Abstract: JSs diode
Text: BAS 21U Silicon Switching Diode Array For high-speed switching applications 5 4 6 Internal galvanic isolated diodes in one package 3 C1 C2 C3 6 5 4 2 1 VPW09197 1 2 3 A1 A2 A3 EHA07291 Type Marking BAS 21U JSs Pin Configuration Package 1=A1 2=A2 3=A3 4=C3 5=C2 6=C1 SC-74
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PDF
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VPW09197
EHA07291
SC-74
Apr-16-1999
EHB00029
EHB00027
SC74
JSs diode
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Q62702-A3468
Abstract: VPS05604
Text: BAS 70-04S Silicon Schottky Diode Array 4 • General-purpose diode for high-speed switching 5 • Circuit protection 6 • Voltage clamping • High-level detecting and mixing 2 1 3 VPS05604 ESD: Electrostatic discharge sensitive device, observe handling precautions!
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70-04S
VPS05604
Q62702-A3468
OT-363
Sep-07-1998
Q62702-A3468
VPS05604
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Untitled
Abstract: No abstract text available
Text: LASERS & MATERIAL PROCESSING I OPTICAL SYSTEMS I INDUSTRIAL METROLOGY I TRAFFIC SOLUTIONS I DEFENSE & CIVIL SYSTEMS Single Emitter Diode Lasers cw, passively cooled JOLD-8-BAS-1E Design 215712124 Features: Applications: • High optical output power of 8 W cw
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SOD323 ESD
Abstract: Q62702-A1072 BAS170W
Text: BAS 170W Silicon Schottky Diode l General-purpose diodes for high-speed switching l Circuit protection l Voltage clamping l High-level detecting and mixing l Small package SOD-323 ESD: Electrostastic discharge sensitive device, observe handling precautions!
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PDF
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OD-323
Q62702-A1072
SOD323 ESD
Q62702-A1072
BAS170W
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C4 Package
Abstract: VPS05604 diode array MARKING A3
Text: BAS 70-04S Silicon Schottky Diode Array 4 • General-purpose diode for high-speed switching 5 6 • Circuit protection • Voltage clamping • High-level detecting and mixing 2 C1/A2 C3 A4 6 5 4 D2 D1 3 1 VPS05604 D4 D3 1 2 3 A1 C2 A3/C4 EHA07464 ESD: Electrostatic discharge sensitive device, observe handling precautions!
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PDF
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70-04S
VPS05604
EHA07464
OT-363
Oct-07-1999
C4 Package
VPS05604
diode array MARKING A3
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BAS 20 SOT23
Abstract: DIODE BAS 21 sot-23 JSs
Text: BAS 19 . BAS 21 Silicon Switching Diodes 3 High-speed, high-voltage switching applications 2 1 VPS05161 1 3 EHA07002 Type Marking Pin Configuration Package BAS 19 JPs 1=A 2 = n.c. 3=C SOT-23 BAS 20 JRs 1=A 2 = n.c. 3=C SOT-23 BAS 21 JSs 1=A 2 = n.c. 3=C
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VPS05161
EHA07002
OT-23
EHB00032
Oct-07-1999
BAS 20 SOT23
DIODE BAS 21
sot-23 JSs
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marking JSs
Abstract: bas21 DIODE BAS JS v BAS 20 SOT23 Q62702-A113 DIODE BAS JS JSs sot23 Q62702-A79 SOT JPs Q62702-A95
Text: Silicon Switching Diodes ● BAS 19 … BAS 21 High-speed, high-voltage switch Type Marking Ordering Code tape and reel BAS 19 BAS 20 BAS 21 JPs JRs JSs Q62702-A95 Q62702-A113 Q62702-A79 Maximum Ratings Parameter Pin Configuration Package1) SOT-23 Symbol
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Q62702-A95
Q62702-A113
Q62702-A79
OT-23
marking JSs
bas21
DIODE BAS JS v
BAS 20 SOT23
Q62702-A113
DIODE BAS JS
JSs sot23
Q62702-A79
SOT JPs
Q62702-A95
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Untitled
Abstract: No abstract text available
Text: Silicon Switching Diodes ● BAS 19 … BAS 21 High-speed, high-voltage switch Type Marking Ordering Code tape and reel BAS 19 BAS 20 BAS 21 JPs JRs JSs Q62702-A95 Q62702-A113 Q62702-A79 Maximum Ratings Parameter Pin Configuration Package1) SOT-23 Symbol
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Original
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PDF
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Q62702-A95
Q62702-A113
Q62702-A79
OT-23
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a2 marking
Abstract: Q62702-A1066 Marking Code to on semiconductor 720
Text: SIEMENS Silicon Schottky Diode BAS 40W • General-purpose diodes for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing Type BAS 40-04W BAS 40-05W BAS 40-06W Ordering Code tape and reel 1 2 3 Q62702-A1065
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PDF
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Q62702-A1065
Q62702-A1066
Q62702-A1067
0-04W
0-05W
0-06W
OT-323
EHD07I67
a2 marking
Marking Code to on semiconductor 720
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Q62702-A77
Abstract: EHA07008
Text: SIEMENS Silicon Switching Diode Array BAS 28 • For high-speed switching • Electrically insulated diodes Type Marking Ordering Code tape and reel BAS 28 JTs Q62702-A77 Pin Configuration * Package1) 1 SOT-143 r ^ i o- pH-° 3 i o 2 0 - ^ - O
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OCR Scan
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PDF
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Q62702-A77
EHA07008
OT-143
Q62702-A77
EHA07008
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Q62702A1072
Abstract: BAS170W
Text: SIEMENS BAS 170W Silicon Schottky Diode • • • • • General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing Small package SOD-323 ESP: Electrostastic discharge sensitive device, observe handlirig precautions!
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OCR Scan
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PDF
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OD-323
Q62702-A1072
Q62702A1072
BAS170W
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MARKING 74s
Abstract: PF 7004S
Text: SIEMENS BAS 70-04S Silicon Schottky Diode Array 4 • General-purpose diode for high-speed switching 5 • Circuit protection • Voltage clamping • High-level detecting and mixing n y W C 1/A 2 C2 R n fi è 3 2 A1 1 VPS05604 ESD: Electrostatic discharge sensitive device, observe handling precautions!
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OCR Scan
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PDF
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70-04S
VPS05604
70-04S
Q62702-A3468
OT-363
MARKING 74s
PF 7004S
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Untitled
Abstract: No abstract text available
Text: PLESSEY SEMICOND/DISCRETE 03 DE J 7 2 2 0 5 3 3 □oDbSbb □ I BAS 19 B AS20 BAS21 High speed switching diode - ¿3-0f - A B S O LU T E M A X IM U M RATINGS Parameter Symbol B A S 19 BAS20 B A S 21 Continuous reverse voltage Vr 100 150 200 V Repetitive peak reverse voltage
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BAS21
BAS20
BAS21
A7220533
0AS19/O
100ns
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DIODE A6
Abstract: Y6 ZENER DIODE BZXB4C10 sprague catalog BZX marking diode ZENER diode Y8 Y4 ZENER DIODE diode ZENER A8 diode ZENER Y6 marking A6 ZENER DIODE
Text: SPRflGUE DIODES « DIODES » DIODES « DIODES ♦ DIODES THE MARK OF RELIABILITY SERIES BAV and BAW MICROMINIATURE DIODES • • Series BAS, BAV, and BAW consists of standard European single and dual diode types. Devices are molded in a T 0 -2 6 3 A A high-profile or T O -2 3 6 AB (low-profile) package. These
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T0-263AA
orTO-236AB
S0T23
BZX84C24
BZX84C27
BZX84C30
BZX84C33
BZX84C4V7
BZX84C4V7R
DIODE A6
Y6 ZENER DIODE
BZXB4C10
sprague catalog
BZX marking diode
ZENER diode Y8
Y4 ZENER DIODE
diode ZENER A8
diode ZENER Y6 marking
A6 ZENER DIODE
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Untitled
Abstract: No abstract text available
Text: irr BAS 19 BAS 21 Silicon Switching Diodes 32E D • Ö 23 b32 0 QQlb5Q2 3 M S I P SIEMEN S/ SPCLi SEMICONDS # High-speed, high-voltage switch Type Marking BAS 19 BAS 20 BAS 21 JP JR JS Ordering code for versions in bulk Q62702-A242 Q62702-A707 Q62702-A708
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PDF
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Q62702-A242
Q62702-A707
Q62702-A708
Q62702-A95
Q62702-A113
Q62702-A79
3AS19
fl23b320
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Switching Diodes BAS 19 . BAS 21 • High-speed, high-voltage switch Type M arking O rdering Code tape and reel BAS 19 BAS 20 BAS 21 JPs JRs JSs Q62702-A95 Q62702-A113 Q62702-A79 Pin C onfigu ratio n Package1) 1 r^ i 3 o-^ 1 -o
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OCR Scan
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PDF
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Q62702-A95
Q62702-A113
Q62702-A79
OT-23
EHA07002
EHB0CO26
EHB00031
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Switching Diodes BAS 19 . BAS 21 • High-speed, high-voltage switch T yp e M arking O rdering C o d e tape and reel B A S 19 B A S 20 BAS 21 JPs JR s JSs Q62702-A95 Q62702-A113 Q62702-A79 Pin Configuration P a ck a g e1» 1-^ IsJ-0
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PDF
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Q62702-A95
Q62702-A113
Q62702-A79
OT-23
EH600026
fl0002fl
CHB00031
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BAY99
Abstract: BAW56 Diode BAV99 SOT23 BAV70 BAY70 3PIR BAS16 BAV99 MJ marking sot23 LFL 2.25
Text: Surface M o u n t S w itching Diode SW ITCH IN G DIODE 200-215m AM PERRES 70-75 VOLTS F eatu res: *Low C urrent Leakage *Low Forward Voltage "Reverse Recover Tim e T r r* 6 n s *S m all O utline Surface M ount SOT-23 Package SOT-23 O u tlin e Dimensions unit:mm
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OCR Scan
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PDF
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OT-23
BAV70
BAW56
200-215m
OT-23
B\W54>
BAY99
Diode BAV99 SOT23
BAY70
3PIR
BAS16
BAV99
MJ marking sot23
LFL 2.25
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diodes b
Abstract: AS21
Text: Silicon Switching Diodes • B AS 19 B AS 21 High-speed, high-voltage switch Type Marking Ordering code for versions in bulk Ordering code for versions on 8 mm-tape Package B A S 19 B A S 20 B A S 21 JP JR JS Q62702-A242 Q62702-A707 Q62702-A708 Q62702-A95
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OCR Scan
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PDF
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Q62702-A242
Q62702-A707
Q62702-A708
Q62702-A95
Q62702-A113
Q62702-A79
3AS19
diodes b
AS21
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS GMTâ SlnlEET BAS29; BAS31; BAS35 General purpose controlled avalanche double diodes Product specification Supersedes data of 1996 Sep 10 Philips Semiconductors 1999 May 21 PHILIPS Philips Semiconductors Product specification General purpose controlled avalanche
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OCR Scan
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PDF
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BAS29;
BAS31;
BAS35
BAS31
BAS35
BAS29
115002/00/03/pp12
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C20 diode, TO
Abstract: 10 35 DIODE diode 5V6 DIODE 748 DIODE zener diode c20 diode zener c2 6 FMMD2837 C2 6 zener diode c20 diode
Text: SOT-23 TR A N S IS T O R S & D IO D ES SILICON ABRIJPT TUNER D ODES Type FMMV2101 FM M V2102 FM M V 2103 F M M V 2104 F M M V 2105 FM M V 2106 FM M V 2107 FM M V 2108 F M M V 2109 Reverse breakdown Voltage V R Volts max. 30 30 30 30 30 30 30 30 30 Nominal capacitance
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PDF
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OT-23
C2/C20
50MHz
FMMV2101
FMMV2102
FMMV2103
FMMV2104
FMMV2105
FMMV2106
FMMV2107
C20 diode, TO
10 35 DIODE
diode
5V6 DIODE
748 DIODE
zener diode c20
diode zener c2 6
FMMD2837
C2 6 zener diode
c20 diode
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