Untitled
Abstract: No abstract text available
Text: PIN DIODE MODULES PIN diode switches PIN DIODE SWITCHES Features TEMEX offers a complete series of Silicon PIN diode switches covering frequencies from 10MHz to 18 GHz in octave or multi-octave bandwidth. These units are available in packaged or surface mount version.
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10MHz
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Abstract: No abstract text available
Text: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
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STPSC10H065
O-220AC
O-220AC
STPSC10H065D
STPSC10H065DI
STPSC10H065B-TR
STPSC10H065G-TR
DocID023604
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Untitled
Abstract: No abstract text available
Text: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
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STPSC6H065
O-220AC
STPSC6H065D
STPSC6H065G-TR
DocID023247
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Untitled
Abstract: No abstract text available
Text: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
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STPSC10H065
O-220AC
STPSC10H065D
STPSC10H065G-TR
DocID023604
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free IR circuit diagram
Abstract: diode marking DEC forward reverse diagram 1SS356 DIODE MARKING 1M 1SS356 MARKING band switching diode 1ss356 equivalent
Text: 1SS356 Surface Mount Band Switching Diode Band Switching Diode P b Lead Pb -Free 100m AMPERES 35 VOLTS Features: * Low Diode Capacitance : 1.2pF(Max.) * Low Diode Forward Resistance : 0.9Ω(Max.) * Low Reverse Current : IR = 10nA(Max.) * Small outline Surface mount SOD-323 Package
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1SS356
OD-323
OD-323
MIL-STD-202
05-Dec-05
100MHz
free IR circuit diagram
diode marking DEC
forward reverse diagram
1SS356
DIODE MARKING 1M
1SS356 MARKING
band switching diode
1ss356 equivalent
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Untitled
Abstract: No abstract text available
Text: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
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STPSC6H065
O-220AC
O-220AC
STPSC6H065D
STPSC6H065DI
STPSC6H065B-TR
STPSC6H065G-TR
DocID023247
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Untitled
Abstract: No abstract text available
Text: STPSC4H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
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STPSC4H065
O-220AC
O-220AC
STPSC4H065D
STPSC4H065DI
DocID023598
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Untitled
Abstract: No abstract text available
Text: STPSC8H065 650 V power Schottky silicon carbide diode Datasheet − production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
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STPSC8H065
O-220AC
O-220AC
STPSC8H065D
STPSC8H065DI
STPSC8H065B-TR
STPSC8H065G-TR
DocID023603
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Untitled
Abstract: No abstract text available
Text: STPSC10H065-Y Automotive 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
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STPSC10H065-Y
DocID026618
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DIODE A6 sod110
Abstract: sod110 package SOD-110 BA792 philips zener diode SOD110 BAS216 BAS221 BAT254 Zener Diode MARK 101 SOD323
Text: Philips Semiconductors Comprehensive diode range: • Zener diodes • Schottky-barrier diode • Switching diodes • Band-switching diode SOD110 High-performance ceramic package www.semiconductors.philips.com V-packTM technology for higher power dissipation
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OD110
OD110
innovat27
SCB63
DIODE A6 sod110
sod110 package
SOD-110
BA792
philips zener diode
SOD110
BAS216
BAS221
BAT254
Zener Diode MARK 101 SOD323
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S4 SMD diode mark
Abstract: top mark smd Philips BA792 diode smd mark s4 SOD110 REFLOW Mam1
Text: DISCRETE SEMICONDUCTORS DATA SHEET BA792 Band-switching diode Product specification File under Discrete Semiconductors, SC01 1996 Mar 13 Philips Semiconductors Product specification Band-switching diode BA792 FEATURES • Ceramic SMD package • Low diode capacitance:
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BA792
MAM139
OD110)
OD110
S4 SMD diode mark
top mark smd Philips
BA792
diode smd mark s4
SOD110 REFLOW
Mam1
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BA792
Abstract: top mark smd Philips Diode smd code 805 SMD MARKING 541 DIODE 279-27 smd diode marking kda marking code kda smd code marking 777 smd diode marking 77 S4 SMD diode mark
Text: DISCRETE SEMICONDUCTORS DATA SHEET BA792 Band-switching diode Product specification File under Discrete Semiconductors, SC01 1996 Mar 13 Philips Semiconductors Product specification Band-switching diode BA792 FEATURES • Ceramic SMD package • Low diode capacitance:
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BA792
MAM139
OD110)
OD110
SCDS47
117021/1100/01/pp8
BA792
top mark smd Philips
Diode smd code 805
SMD MARKING 541 DIODE
279-27
smd diode marking kda
marking code kda
smd code marking 777
smd diode marking 77
S4 SMD diode mark
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1N4148 SOD80C
Abstract: 1N4148 SOD-80C LL4148 VISHAY ll4148 sod123 general semiconductor DIODE SOD80 LL4148 SOT23 LL4148 SOT MINI-MELF DIODE BLACK CATHODE
Text: LL4148 Vishay Semiconductors formerly General Semiconductor Small-Signal Diode MiniMELF SOD-80C Reverse Voltage 100V Forward Current 150mA Features Cathode Band • Silicon Epitaxial Planar Diode • Fast switching diode in MiniMELF case especially suited
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LL4148
OD-80C)
150mA
DO-35
1N4148,
OD-123
1N4148W,
OT-23
IMBD4148.
OD-80)
1N4148 SOD80C
1N4148 SOD-80C
LL4148 VISHAY
ll4148 sod123
general semiconductor DIODE SOD80
LL4148 SOT23
LL4148 SOT
MINI-MELF DIODE BLACK CATHODE
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SMD MARKING 541 DIODE
Abstract: smd diode 708 BA792 Diode smd code 805 SOD110 S4 SMD diode mark MCC SMD DIODE SMD MARK CODE s4 BP317 diode marking code 777
Text: DISCRETE SEMICONDUCTORS DATA SHEET L8 book, halfpage M3D178 BA792 Band-switching diode Product specification 1996 Mar 13 Philips Semiconductors Product specification Band-switching diode BA792 FEATURES • Ceramic SMD package • Low diode capacitance: max. 1.1 pF
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M3D178
BA792
MAM139
OD110)
OD110
SCDS47
113061/1100/01/pp8
SMD MARKING 541 DIODE
smd diode 708
BA792
Diode smd code 805
SOD110
S4 SMD diode mark
MCC SMD DIODE
SMD MARK CODE s4
BP317
diode marking code 777
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LL4148 diode galaxy electrical
Abstract: MELF DIODE color bands LL4148 LL4148 melf
Text: BL GALAXY ELECTRICAL SMALL SIGNAL SWITCHING DIODE FEATURES LL4148 1111REVERSE VOLTAGE: 75 V CURRENT: 0.15 A Mini - MELF Silicon epitaxial diode High speed switching diode 500mW power dissipation MECHANICAL DATA Case:Mini-MELF glass case Polarity:Color band denotes cathode
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LL4148
1111REVERSE
500mW
LL4148 diode galaxy electrical
MELF DIODE color bands
LL4148
LL4148 melf
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Untitled
Abstract: No abstract text available
Text: STPSC6TH13TI Dual 650 V power Schottky silicon carbide diode in series Datasheet - production data Description 1 The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material
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STPSC6TH13TI
DocID024696
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100MHZ
Abstract: marking code TS
Text: 1SV277WT BAND-SWITCHING DIODE Features PINNING • Small plastic SMD package • Continuous reverse voltage: max. 35V 1 Cathode • continuous forward current:max.100mA 2 Anode • Low diode capacitance:max.1.2pF • Low diode forward resistance : max. 0.7Ω.
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1SV277WT
100mA
OD-523
OD-523
100MHZ
marking code TS
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Untitled
Abstract: No abstract text available
Text: STPSC10TH13TI Dual 650 V power Schottky silicon carbide diode in series Datasheet - production data Description 1 The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material
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STPSC10TH13TI
DocID024699
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Untitled
Abstract: No abstract text available
Text: STPSC8TH13TI Dual 650 V power Schottky silicon carbide diode in series Datasheet - production data Description 1 The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material
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STPSC8TH13TI
DocID024698
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100MHZ
Abstract: No abstract text available
Text: 1SV277WT BAND-SWITCHING DIODE Features PINNING • Small plastic SMD package • Continuous reverse voltage: max. 35V 1 Cathode • continuous forward current:max.100mA 2 Anode • Low diode capacitance:max.1.2pF • Low diode forward resistance : max. 0.7Ω.
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1SV277WT
100mA
OD-523
OD-523
100MHZ
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DIODE 1SS133
Abstract: 1SS133
Text: 1SS133 SMALL SIGNAL DIODE VOLTAGE: 90V CURRENT: 130mA FEATURE DO-34 Silicon Single Junction Diode Fast switching Diode MECHANICAL DATA Case: DO-34 Glass case Polarity: color band denotes cathode Mounting position: any Weight: approx . 0.12g Dimensions in inches and millimeters
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1SS133
130mA
DO-34
DO-34
100uA
100mA
to100KHZ
1-Jun-03
DIODE 1SS133
1SS133
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1N4148WS
Abstract: No abstract text available
Text: Diode Silicon Epitaxial Switching Diode Feature: • Fast Switching Diode. Marking 1N4148WS= A2 with cathode band. Absolute Maximum Ratings Description Symbol Value Continuous Reverse Voltage VR 75 VRRM 100 *IF AV 150 Surge Forward Current t <1s and Tj = 25°C
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1N4148WS=
1N4148WS
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Untitled
Abstract: No abstract text available
Text: N AflER PHILIPS/D ISCR ETE b'lE D • APX bbSBSBl D02blbS 2T2 BA423L SILICON AM BAND SWITCHING DIODE FOR SURFACE MOUNTING The BA423L is a switching diode intended for band switching in AM radio receivers. This SM diode is a leadless diode in a hermetically sealed SOD-80 envelope with lead/tin plated metal
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D02blbS
BA423L
BA423L
OD-80
OD-80)
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Untitled
Abstract: No abstract text available
Text: Product specification Philips Semiconductors BB901 Variable capacitance diode DESCRIPTION The BB901 is a silicon planar variable capacitance diode in a microminiature SOT23 envelope. It is intended as a tunable coupling diode in VHF all-band tuners. QUICK REFERENCE DATA
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BB901
BB901
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