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    DIODE BA157 Search Results

    DIODE BA157 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE BA157 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ba159 diode

    Abstract: BA157 diode ba157 diode BA159 BA157-T3 BA157-TB BA158 BA158-T3 BA158-TB BA159
    Text: BA157 – BA159 WTE POWER SEMICONDUCTORS Pb 1.0A FAST RECOVERY DIODE Features ! Diffused Junction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data ! ! ! ! ! ! ! C Case: DO-41, Molded Plastic


    Original     		PDF BA157 BA159 DO-41, MIL-STD-202, DO-41 ba159 diode BA157 diode ba157 diode BA159 BA157-T3 BA157-TB BA158 BA158-T3 BA158-TB BA159

    Untitled

    Abstract: No abstract text available
    Text: BA157 – BA159 1.0A FAST RECOVERY DIODE WON-TOP ELECTRONICS Pb Features  Diffused Junction     Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability B A A Mechanical Data      


    Original     		PDF BA157 BA159 DO-41, MIL-STD-202, DO-41

    DI108S

    Abstract: SK5100 CP2506 sb5200 SB840
    Text: Diode & Rectifiers Diode & Rectifiers MERITEK RoHS TABLE OF CONTENT • PLASTIC PASSIVATED JUNCTION RECTIFIER o General Purpose


    Original     		PDF 38x45Â DI108S SK5100 CP2506 sb5200 SB840

    Untitled

    Abstract: No abstract text available
    Text: BA157 – BA159 WTE POWER SEMICONDUCTORS Pb 1.0A FAST RECOVERY DIODE Features  Diffused Junction     Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data        C Case: DO-41, Molded Plastic


    Original     		PDF BA157 BA159 DO-41, MIL-STD-202, DO-41

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


    Original     		PDF MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45

    power supplies

    Abstract: diode 4007 smd diode P6KE diode SMD package P6KEC EM513 DIODE BY255 S5 DIODE smd schottky diode s3 b40 zener diode P6KE SMD UF4004 SMD
    Text: Diotec Products for Power Supplies Typical Applications: AC/DC-, DC/DC-Converters, Battery Chargers, Off-Line PS Line Protection Î TVS-Diodes Input Rectification Î Bridge Rectifiers, Standard-/Fast Rectifiers Voltage Regulation Î Zener Diodes Boost-Diode for PFC


    Original     		PDF 1N4001. 1N5391. 1N5400K. 1N5400. BY251. BY550-. P1000. P1200. SB120. SB220. power supplies diode 4007 smd diode P6KE diode SMD package P6KEC EM513 DIODE BY255 S5 DIODE smd schottky diode s3 b40 zener diode P6KE SMD UF4004 SMD

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50

    rgp10j diode

    Abstract: FR207 diode diode rgp10g by399 diode RGP15G diode diode fr302 diode RGP30G RGP30B SDO-15 FR104 diode
    Text: Axial Diode Series FAST RECOVERY RECTIFIERS Maximum Maximum Maximum TYPE Peak Maximum Average Rectified Current Reverse at Half-wave Resistive load 50HZ Voltage Forward Peak Reverse Surge Current Current at 50HZ PRV and Maximum Forward Recovery Superimposed TA=25°C


    Original     		PDF 1N4933 DO-41 1N4934 1N4935 1N4936 DO-15 RGP15M rgp10j diode FR207 diode diode rgp10g by399 diode RGP15G diode diode fr302 diode RGP30G RGP30B SDO-15 FR104 diode

    mur1650

    Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
    Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and


    Original     		PDF MBRB1045 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 mur1650 T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount

    FE16B

    Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
    Text: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —


    Original     		PDF MBRP60035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 FE16B mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent

    PK MUR 460

    Abstract: pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360
    Text: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,


    Original     		PDF MBR340 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 PK MUR 460 pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360

    MR2835S equivalent

    Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
    Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		PDF MBR6045PT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MR2835S equivalent A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502

    equivalent components of diode 1N5399

    Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
    Text: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		PDF MBR6045WT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 equivalent components of diode 1N5399 diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode

    BA157G

    Abstract: BA158G BA159DG BA159G
    Text: LESHAN RADIO COMPANY, LTD. BA157G – BA159G FAST GPP DIODES TYPE Maximum Peak Reverse Voltage Maximum Average Maximum Rectified Current Forward Peak @ Half-Wave Surge Current @ Resistive Load 60Hz 8.3ms Superimposed PRV I O@ T L V PK BA157G BA158G BA159DG


    Original     		PDF BA157G BA159G BA158G BA159DG BA157G BA158G BA159DG BA159G

    BA157

    Abstract: BA158 BA159 DIODE BA159 ba159 diode diode BA157
    Text: CURRENT 1.0 Ampere VOLTAGE 400 to 1000 Volts BA157 THRU BA159 Features • Plastic package has Underwrites Laboratory Flammability Classification 94V-0 · Fast switching speed · Diffused junction · High current capability · High temperature soldering guaranteed : 250℃/10 seconds,


    Original     		PDF BA157 BA159 DO-41 DO-41 MIL-STD-750, BA158 BA159 DIODE BA159 ba159 diode diode BA157

    Untitled

    Abstract: No abstract text available
    Text: BA157PT CHENMKO ENTERPRISE CO.,LTD THRU FAST RECOVERY RECTIFIER VOLTAGE RANGE 400 - 1000 Volts BA159PT CURRENT 1.0 Ampere FEATURES * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * Fast Recovery Diodes * Diffused junction * High current capability


    Original     		PDF BA157PT BA159PT DO-41 DO-41 MIL-STD-750,

    Diode BA159

    Abstract: No abstract text available
    Text: BA157, BA158, BA159D, BA159 www.vishay.com Vishay General Semiconductor Fast Switching Plastic Rectifier FEATURES • Fast switching for high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106


    Original     		PDF BA157, BA158, BA159D, BA159 22-B106 DO-204AL DO-41) 2002/95/EC. 2002/95/EC 2011/65/EU. Diode BA159

    Untitled

    Abstract: No abstract text available
    Text: Silicon Rectifier Formosa MS BA157 THRU BA159 List List. 1 Package outline. 2 Features. 2


    Original     		PDF BA157 BA159 MIL-STD-750D METHOD-1051 METHOD-1056 METHOD-4066-2 1000hrs.

    diode 0336 A

    Abstract: No abstract text available
    Text: BA157GP, BA158GP, BA159DGP, BA159GP www.vishay.com Vishay General Semiconductor Glass Passivated Junction Fast Switching Plastic Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction SUPERECTIFIER


    Original     		PDF BA157GP, BA158GP, BA159DGP, BA159GP 22-B106 AEC-Q101 DO-204AL DO-41) 600electronic 2002/95/EC. diode 0336 A

    BA157* diode

    Abstract: Zener Diode Glass 50v
    Text: WON-TOP ELECTRONICS Material Composition Declaration Package Information Package DO-41 Package Weight mg 350 Product Group Type No. 1N5817 – 1N5819 SB120 – SB1200 SR120 – SR1100 SB220S – SB2200S SF11 – SF17 HER101 – HER108 UF4001 – UF4007


    Original     		PDF DO-41 1N5817 1N5819 SB120 SB1200 SR120 SR1100 SB220S SB2200S HER101 BA157* diode Zener Diode Glass 50v

    diode zener ZD 601

    Abstract: BA159 equivalent zener diode catalogue diode zener ZD 15 ZENER ZD 920 zener zd 501 application note 26LS31 diode zener 1n4002 diode zener ZD 36 diode zener ZD 150
    Text: iC-HD7 QUAD DIFFERENTIAL LINE DRIVER Rev A5, Page 1/8 FEATURES APPLICATIONS ♦ Complementary short-circuit-proof push-pull driver stages for RS422 and 24 V applications up to 2 MHz ♦ Pin-compatible to 26LS31, xx7272 ♦ Integrated line adaptation for high signal quality at 24 V


    Original     		PDF RS422 26LS31, xx7272 SO16N D-55294 diode zener ZD 601 BA159 equivalent zener diode catalogue diode zener ZD 15 ZENER ZD 920 zener zd 501 application note 26LS31 diode zener 1n4002 diode zener ZD 36 diode zener ZD 150

    diode zener ZD 200

    Abstract: diode zener ZD 101 diode zener ZD 601 ZENER ZD 920 diode zener ZD 36 diode zener ZD 12 diode zener ZD 103 diode zener ZD 15
    Text: iC-HD7 QUAD DIFFERENTIAL LINE DRIVER Rev A5, Page 1/8 FEATURES APPLICATIONS ♦ Complementary short-circuit-proof push-pull driver stages for RS422 and 24 V applications up to 2 MHz ♦ Pin-compatible to 26LS31, xx7272 ♦ Integrated line adaptation for high signal quality at 24 V


    Original     		PDF RS422 26LS31, xx7272 SO16N D-55294 diode zener ZD 200 diode zener ZD 101 diode zener ZD 601 ZENER ZD 920 diode zener ZD 36 diode zener ZD 12 diode zener ZD 103 diode zener ZD 15

    BA159S

    Abstract: BA157S BA158S
    Text: BA157S. BA159S Fast General Purpose Silicon Rectifiers Milli meters for high speed switching applications, e.g. as clamping diode in colour TV receivers The rectifiers in plastic case DO-41 are designated by suffix S. at Cathode Mark Dim. Min. Max. A 4.07


    OCR Scan     		PDF BA157S. BA159S DO-41 BA157S BA158S BA159S 4bfl5711 0003fl7b

    ITT BA159

    Abstract: diode ITT 157 ba ba159 ITT BA157 ba159 diode BA157 BA157 200 BA158 DIODE BA159 BA159 switching diode
    Text: ITT SEMICON»/ INTERMETALL 50E D 4bA2711 OODBMSS S74 M I S I 13 BA157 . BA159 Fast General Purpose Silicon Rectifiers for high speed switching applications, e. g. as clamping diode in colour TV receivers J * - max 3.2 islI f I Cathode Mark ^0.8 i> Plastic case


    OCR Scan     		PDF 4bfl2711 BA157 BA159 BA157 BA158 BA159 4b62711 BA157: ITT BA159 diode ITT 157 ba ITT BA157 ba159 diode BA157 200 DIODE BA159 BA159 switching diode