IEC 947 EN 60947
Abstract: MCC panel design buzzer panel DC-13 Q300 RJ12 1302401 VDE 0660 - 107 Sonic Drive
Text: RAFIX 22 QR 2 General data RAFIX 22QR control component range • For a mounting hole diameter of 22.3 mm to IEC 60947 • 250V/10A max. • Water-jet proof IP65 • 2 collar shapes • The lamps of the pushbuttons can also be replaced from the front • The contact blocks silver or gold contacts snap onto the actuators with a coupling
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50V/10A
IEC 947 EN 60947
MCC panel design
buzzer panel
DC-13
Q300
RJ12
1302401
VDE 0660 - 107
Sonic Drive
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Q65110A7879
Abstract: LUWC9SP
Text: Ceramic TopLooker for high light output, designed for camera flash application Lead Pb Free Product - RoHS Compliant LUW C9SP CERAMOSTM Released Besondere Merkmale • Gehäusetyp: SMD Keramik Gehäuse mit Silikonverguss • Typischer Lichtstrom: 92 lm bei 500 mA
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4000/Rolle,
Q65110A7879
LUWC9SP
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Untitled
Abstract: No abstract text available
Text: Ceramic TopLooker for high light output, designed for camera flash application Lead Pb Free Product - RoHS Compliant LUW C9EP CERAMOSTM Released Besondere Merkmale • Gehäusetyp: SMD Keramik Gehäuse mit diffusem Silikonverguss • Typischer Lichtstrom: 84 lm bei 500 mA
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4000/Rollely
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Untitled
Abstract: No abstract text available
Text: CM450DXL-34SA Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Dual IGBT NX-Series Module 450 Amperes/1700 Volts A D AX E AU F G 18 MN J H AD J AR AS K 17 16 15 14 13 AT J H H AK 12 11 L AQ G 10 H 9 1 P Z Y DETAIL “C & D”
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CM450DXL-34SA
Amperes/1700
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Untitled
Abstract: No abstract text available
Text: CM450DXL-34SA Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Dual IGBT NX-Series Module 450 Amperes/1700 Volts A D AX E AU F G 18 MN J H AD J AR AS K 17 16 15 14 13 AT J H H AK 12 11 L AQ G 10 H 9 U T 1 P Z Y DETAIL “C & D”
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CM450DXL-34SA
Amperes/1700
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Field-Programmable Gate Arrays
Abstract: MPC8260 MPC860
Text: Product Brief January 15, 2002 ORCA Series 4 Field-Programmable Gate Arrays Introduction • Traditional I/O selections: — LVTTL and LVCMOS 3.3 V, 2.5 V, and 1.8 V I/Os. — Per pin-selectable I/O clamping diodes provide 3.3 V PCI compliance. — Individually programmable drive capability:
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sink/12
256-Pin
352-Pin
416-Pin
432-Pin
680-Pin
PB02-027NCIP
PB01-046NCIP)
Field-Programmable Gate Arrays
MPC8260
MPC860
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MSPD2018
Abstract: MZBD-9161 ZENER 15B1 msd700 package inductance MSPD2018-H50 B20 zener diode glass MPN7320 MZBD9161 MLP7121 15B1 zener diode
Text: Aeroflex / Metelics, Inc. Microwave Diodes & Passive Semiconductor Devices Microwave Diodes & Passive Semiconductor Devices Aeroflex / Metelics, Inc. Aeroflex / Metelics, Inc. East Coast Operations 54 Grenier Field Road, Londonderry, NH 03053 Tel: 603 641-3800
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foc17091
MSPD2018
MZBD-9161
ZENER 15B1
msd700 package inductance
MSPD2018-H50
B20 zener diode glass
MPN7320
MZBD9161
MLP7121
15B1 zener diode
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Untitled
Abstract: No abstract text available
Text: SIEM ENS BA 892 Silicon Rf Switching Diode Preliminary data • For VH F band switching in TV / VTR tuners • Low forward resistance, small capacitance, small inductance Type Marking Ordering Code Pin Configuration BA 892 A Q62702-A1214 1 =C 2 =A Package
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Q62702-A1214
SCD-80
E35b05
01201fl4
100MHz
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BA diode
Abstract: BA147-150 BA147 diode ba 147 diode case R-1 diode case R-1 G BA 30 C BA147-300 BA 147 41880
Text: BA 1 4 7 / . . Silizium-Diode Silicon diode Anwendungen: Allgemein Applications: General purpose Abmessungen in mm Dimensions in mm KATHODE CATHODE IL » 2 ,6 'j ^ 1 1 0 0 ,5 5 ' H l - 1 —-2 6 - ► - -7 .2 -— - - 2 6 - 5 117
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1300313
Abstract: JE 13003
Text: b7 {DISCRETE/OPTO} 9 09 725 0 T OS HI BA D eT| TOTVHSG 000^355 5 | ~ D IS C R E T E / O P T O 6 7c 09355 ; D " Silicon EpitaxiaL P la n a r Ty pe 1SV100 Variable Capacitance Diode AM RADIO BAND TUNING APPLICATIONS. Unit in mm 4 .2 MAX. FEATURES: . High Capacitance Ratio : C]_v/c9V= 17(Min.)
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1SV100
a55MAX.
1300313
JE 13003
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cqx 87
Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157
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AA113
AA117
AA119
BAV17
BAV18
BAV19
BAV20
BAV21
cqx 87
germanium
AEG Thyristor T 558 F
TDA 2516
bu208
bf506
la 4430
BF963
TDA1086
transistor bf 175
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BA282
Abstract: marking SA FHA07001 BA diode BA 282 diode ba 147
Text: SIEMENS BA 282 BA 283 Silicon RF Switching Diodes • For low-loss VHF band switching in TV tuners • Not for new design Type Marking Ordering Code Pin Configuration Package1 BA 282 yellow Q62702-A428 DO-35 DHD Q62702-A429 BA 283 ¿ - K] o FHA07001 Maximum Ratings
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Q62702-A428
FHA07001
DO-35
Q62702-A429
6E35bOS
E3Sb05
BA282
marking SA
BA diode
BA 282
diode ba 147
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ELM14701AA
Abstract: 1220CT schottky diode low vf 5A
Text: P-Channel+Scottky Power MOS FET ELM14701XA Advance Information ELM14701xA —- Advance Information P-Channel Enhancement Mode Power MOS FET with Schottky Diode • GENERAL DESCRIPTION ELM14701xA Series uses advanced trench technology to provide excellent R ds<on : and low gate charge.
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ELM14701XA
ELM14701XA
49mi3.
ELM14701
14701BA
ELM14701AA
1220CT
schottky diode low vf 5A
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FD6666 diode
Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Text: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5
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A4/10
A5/62
A5/105
A1000
AA100
AA110
AA111
AA112
AA113
AA114
FD6666 diode
diode BY100
1N4Q07
BA100 diode
BY164
BB139
BAY38
diode aa119
1S184 diode
1N82
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Diode IN 5404
Abstract: No abstract text available
Text: 7 4 A C /A C T 11471 Octal Transceiver/Register with Dual Enable; 3-State; INV S ignetics Objective Specification ACL Products GENERAL INFORMATION FEATURES • Combines '245 and '374 type func tions in one chip • Output capability: ±24 mA •'PD CPv y to
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-24mA
Diode IN 5404
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74ACT11475
Abstract: No abstract text available
Text: 7 4 A C /A C T 1 1475 9-Wide Transceiver/Register with Dual Enable; 3-State; INV S ig n e tic s Objective Specification ACL Products GENERAL INFORMATION FEATURES • Combines '245 and '374 type func tions In one chip SYMBOL • 9-wlde transceiver with D-type flipflops
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ZPD 5.1 ITT
Abstract: ZPD ITT diode zener ZD 88 germanium BYY32 germanium transistor CJ 4148 ZENER BAW21 ITT ZPD 11 itt germanium diode
Text: General Information Germanium Gold Bonded Diodes Silicon Diodes Silicon Capacitance Diodes Silicon Diode Switches PIN Diodes Silicon Zener Diodes and Temperature Compensated Stabilizing Circuits Silicon Stabilizer Diodes Light Emitting Diodes Silicon Rectifiers
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F-92223
D-7800
ZPD 5.1 ITT
ZPD ITT
diode zener ZD 88
germanium
BYY32
germanium transistor
CJ 4148 ZENER
BAW21
ITT ZPD 11
itt germanium diode
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54HC04
Abstract: No abstract text available
Text: i-H a-xt -oo Technical Data CD54/74HC04 CD54/74HCT04 File N u m b e r H A RR IS S E M I C O N D S E CT OR 27E D B M302271 GG174b7 1471 b BHAS High-Speed CMOS Logic — vcc 13 I •■ ■ — Hex Inverter BA Type Features: t i : ■ In p u t and O u tp u t are bo th bu ttere d
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CD54/74HC04
CD54/74HCT04
M302271
GG174b7
54/74H
74HCT
54HCT
4/74H
54HC04
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Untitled
Abstract: No abstract text available
Text: SSP6N80A A d va n ce d Power MOSFET B ^ dss - 800 V Rugged Gate Oxide Technology ^DS on = 2.0 Q • Lower Input Capacitance < CO II _Q FEATURES ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Avalanche Rugged Technology ■ ■ Lower Leakage Current : 25 fiA (Max.) @ VDS = 800V
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SSP6N80A
003b32fl
O-220
00M1N
7Tb4142
DD3b33D
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TRANSISTOR 131-6 BJ 946
Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Text: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise
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B3-B3715
B3715-X-X-7600
TRANSISTOR 131-6 BJ 946
transistor bc 564
transistor Bc 949 datenblatt
TRANSISTOR BC 545
MARKING CODE AGS bsp 2000
siemens datenbuch
bft99
mmic SMD amplifier marking code 19s
TRANSISTOR SMD MARKING CODE bc ru
DIODE smd marking 22-16
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74ACT11473
Abstract: No abstract text available
Text: Signetics 74AC/ACT 11473 9-Wide Transceiver with Dual Enable; 3-State; INV O bjective Specification ACL Products GENERAL INFORMATION FEATURES C O N D IT IO N S T a = 25-C ; G ND = OV; • 3-State buffers SY M B O L • Output capability: ±24 mA • CMOS AC and TTL (ACT) voltage
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74AC/ACT
74ACT11473
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Diode KD 514
Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
Text: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381
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Untitled
Abstract: No abstract text available
Text: fciEMTÖES 0 0 1 Ö 3 1 0 2*32 • MITSUBISHI OPTICAL DEVICES FU-630SLD-2M12/2M3/2M6/2M4 1.48 um PUMP LD MODULE WITH SINGLEMODE FIBER (EDFA) DESCRIPTION FEATURES Mitsubishi’s FU-630SLD series 1480nm laser diode modules are designed as optical pumping sources
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FU-630SLD-2M12/2M3/2M6/2M4
FU-630SLD
1480nm
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Westinghouse diode
Abstract: SW06PHR300 westinghouse DIODES DP300 Hawker westinghouse 12 P300
Text: 9 7 0 9 9 55 WESTCODE SEMICONDUCTORS DE I ^ T D ^ S S OODlMtil 7 | . T-ot- 23 3^C 0 1 4 6 1 TECHNICAL PUBLICATION WESTCODE SEMICONDUCTORS DP300 ISSUE 1 May, 1980 * Stud-Base Silicon Rectifier Diodes Type PH N /PH R 300 380amperes average: up to 1500 volts Vr r m
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PHN/PHR300
380amperes
DP300
147400A2
17751OA2
Westinghouse diode
SW06PHR300
westinghouse DIODES
DP300
Hawker
westinghouse 12
P300
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