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    DIODE BA 124 Search Results

    DIODE BA 124 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE BA 124 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    diode 1079

    Abstract: medical application of laser semiconductor laser 1064 nm laser diode
    Text: Version 0.90 08.04.2008 page: 1 from 4 DFB/DBR TPL/TPA BROAD AREA LASER GaAs Semiconductor Laser Diode Single Emitter Structure RWE/RWL PRELIMINARY SPECIFICATION BAL BA Laser EYP-BAL-1064-08000-4020-CMT04-0000 General Product Information Product Application


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    EYP-BAL-1064-08000-4020-CMT04-0000 diode 1079 medical application of laser semiconductor laser 1064 nm laser diode PDF

    Laser Diode 808 nm

    Abstract: eyp-bal-0808 semiconductor laser
    Text: Version 0.90 26.05.2008 page: 1 from 4 DFB/DBR TPL/TPA BROAD AREA LASER GaAs Semiconductor Laser Diode Single Emitter Structure RWE/RWL PRELIMINARY SPECIFICATION BAL BA Laser EYP-BAL-0808-08000-4020-CMT04-0000 General Product Information Product Application


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    EYP-BAL-0808-08000-4020-CMT04-0000 Laser Diode 808 nm eyp-bal-0808 semiconductor laser PDF

    medical application of laser

    Abstract: M4000 980 nm laser diode
    Text: Version 0.90 08.04.2008 page: 1 from 4 DFB/DBR TPL/TPA BROAD AREA LASER GaAs Semiconductor Laser Diode Single Emitter Structure RWE/RWL PRELIMINARY SPECIFICATION BAL BA Laser EYP-BAL-0980-08000-4020-CMT04-0000 General Product Information Product Application


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    EYP-BAL-0980-08000-4020-CMT04-0000 medical application of laser M4000 980 nm laser diode PDF

    laser diode 635 nm

    Abstract: No abstract text available
    Text: Version: 1.02 23.02.2007 page: 1 from 4 BROAD AREA LASER GaAs Semiconductor Laser Diode Single Emitter Structure BA Laser EYP-BAL-0653-00500-0710-CMT02-0000 Absolute Maximum Ratings Symbol Unit min typ max Operational Temperature at case TC °C 40 Forward Current


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    EYP-BAL-0653-00500-0710-CMT02-0000 laser diode 635 nm PDF

    1064 nm laser diode

    Abstract: NTC 10 KOHM
    Text: Version: 1.02 14.11.2006 page: 1 from 4 BROAD AREA LASER GaAs Semiconductor Laser Diode Single Emitter Structure BA Laser EYP-BAL-1064-10000-4020-CDL01-0000 Absolute Maximum Ratings Symbol Unit min typ max Storage Temperature TS °C 70 Operational Temperature at case


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    EYP-BAL-1064-10000-4020-CDL01-0000 1064 nm laser diode NTC 10 KOHM PDF

    NTC Thermistor 8 kOhm

    Abstract: CW laser diode 808 nm eypbal0808070004020cdl010000 eyp-bal-0808-07000-4020-cdl01-0000 connector 2-pin
    Text: Version: 1.02 14.11.2006 page: 1 from 4 BROAD AREA LASER GaAs Semiconductor Laser Diode Single Emitter Structure BA Laser EYP-BAL-0808-07000-4020-CDL01-0000 Absolute Maximum Ratings Symbol Unit min typ max Storage Temperature TS °C 70 Operational Temperature at case


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    EYP-BAL-0808-07000-4020-CDL01-0000 NTC Thermistor 8 kOhm CW laser diode 808 nm eypbal0808070004020cdl010000 eyp-bal-0808-07000-4020-cdl01-0000 connector 2-pin PDF

    thermistor 102 ntc

    Abstract: RESISTOR SIL 102 5 PIN
    Text: Version: 1.02 14.11.2006 page: 1 from 4 BROAD AREA LASER GaAs Semiconductor Laser Diode Single Emitter Structure BA Laser EYP-BAL-0980-10000-4020-CDL01-0000 Absolute Maximum Ratings Symbol Unit min typ max Storage Temperature TS °C 70 Operational Temperature at case


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    EYP-BAL-0980-10000-4020-CDL01-0000 thermistor 102 ntc RESISTOR SIL 102 5 PIN PDF

    Untitled

    Abstract: No abstract text available
    Text: SKKD 701 THYRISTOR BRIDGE,SCR,BRIDGE SEMIPACK 5 IJKL IJJL I P@QQ PUQQ P[QQ I PBQQ P?QQ PVQQ B@QQ BBQQ Symbol Conditions MGCI MGKL 2^' Rectifier Diode Modules SKKD 701 # 2' 23% 4%(&124 2)*.0&'%3 1%'&0 5&*%60&'% 7(%42*2-.* 1%'&0 6(%*.(% 4-)'&4'* +-( ,2/, (%02&5202'8


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    Untitled

    Abstract: No abstract text available
    Text: SKKT 460, SKKH 460 THYRISTOR BRIDGE,SCR,BRIDGE SEMIPACK 5 Thyristor / Diode Modules SKKT 460 SKKH 460 Features # $%&' ' & *+%( ',(-./, &0.12)2.1 # )2'(23% 4%(&124 2)*.0&'%3 1%'&0 5&*%60&'% 7(%42-.* 1%'&0 6(%*.(% 4-)'&4'* +-( ,2/, (%02&5202'8 9: (%4-/)2;%3< +20% )-= >?@A@B


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    Untitled

    Abstract: No abstract text available
    Text: SKKD 380 THYRISTOR BRIDGE,SCR,BRIDGE SEMIPACK 3 Rectifier Diode Modules SKKD 380 Features # $%&' ' & *+%( ',(-./, &0.12)2.1 # )2'(23% 4%(&124 2*-0&'%3 1%'&0 5&*%60&'% 7(%42*2-.* 1%'&0 6(%*.(% 4-)'&4'* +-( ,2/, (%02&5202'8 9: (%4-/)2;%3< +20% )-= > ?@ A@B


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    Untitled

    Abstract: No abstract text available
    Text: SKET 330 THYRISTOR BRIDGE,SCR,BRIDGE SEMIPACK 4 Thyristor Modules SKET 330 Features # $%&' ' & *+%( ',(-./, &0.12)2.1 # )2'(23% 4%(&124 2*-0&'%3 1%'&0 5&*%60&'% 7(%42-.* 1%'&0 6(%*.(% 4-)'&4'* +-( ,2/, (%02&5202'8 9,8(2*'-( :2', &1602+82)/ /&'% ;< (%4-/)2=%3> +20% )-? @ AB CBD


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    Untitled

    Abstract: No abstract text available
    Text: SKKE 600 THYRISTOR BRIDGE,SCR,BRIDGE SEMIPACK 4 DCEF DCCF D RBLL R?LL BLLL D RBLL R?LL BLLL GHMD J ?LL M N*2 = RSLT U4 J RLL VWQ EXX> ?LLYRB EXX> ?LLYR? EXX> ?LLYBL$Z BBLL BBLL EXX> ?LLYBB$Z Symbol Conditions GHMD *2)= RSLT U4 J RLL VW GHEF UP[ J BA VWT RL 1*


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    MG1200FXF1US53

    Abstract: 4500a Toshiba IGBT 1200A 3300V YG6260 transistor BA RW diode ba 124 ba ph 20v diode ba qu IGBT GTR IPM sage power switching 15v 1.2a
    Text: MG1200FXF1US53 TOSHIBA Target Spec. TOSHIBA GTR MODULE MG1200FXF1US53 S ILICON N-CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Features ●High Input Impedance ●Enhancement Mode ●Electrodes are Isolated from Case EQUIVALENT CIRCUIT


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    MG1200FXF1US53 25degC) MG1200FXF1US53 4500a Toshiba IGBT 1200A 3300V YG6260 transistor BA RW diode ba 124 ba ph 20v diode ba qu IGBT GTR IPM sage power switching 15v 1.2a PDF

    ICE3BR0665JF

    Abstract: electrolytic capacitor 2200uf/25V AN-EVALSF3R-ICE3BR0665JF schematic diagram AC to DC converter 100W 3.1v 0.5w ZENER DIODE transformer 100w S10k 25 varistor Epcos n67 material 24v 100w smps ICE3BR0665J
    Text: Application Note, V1.0, Sep 2008 AN-EVALSF3R-ICE3BR0665JF 100W 18V SMPS Evaluation Board with CoolSET F3R ICE3BR0665JF Power Management & Supply N e v e r s t o p t h i n k i n g . Edition 2008-09-09 Published by Infineon Technologies Asia Pacific, 8 Kallang Sector,


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    AN-EVALSF3R-ICE3BR0665JF ICE3BR0665JF ICE3BR0665JF ICE3BRxx65JF electrolytic capacitor 2200uf/25V AN-EVALSF3R-ICE3BR0665JF schematic diagram AC to DC converter 100W 3.1v 0.5w ZENER DIODE transformer 100w S10k 25 varistor Epcos n67 material 24v 100w smps ICE3BR0665J PDF

    IEC 947 EN 60947

    Abstract: EN 60947-1/2 LED Lamp 1W RJ12 socket thermoflex 901-030 EN 60947-5-5 IEC 60947-5-5 DC-13 RJ12
    Text: RAFIX 22 QR 2 General data RAFIX 22QR control component range • For a mounting hole diameter of 22.3 mm to IEC 60947 • 250V/10A max. • Water-jet proof IP65 • 2 collar shapes • The lamps of the pushbuttons can also be replaced from the front • The contact blocks silver or gold contacts snap onto the actuators with a coupling


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    50V/10A M20x1 M25x1 IEC 947 EN 60947 EN 60947-1/2 LED Lamp 1W RJ12 socket thermoflex 901-030 EN 60947-5-5 IEC 60947-5-5 DC-13 RJ12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SKET 400 THYRISTOR BRIDGE,SCR,BRIDGE SEMIPACK 4 Thyristor Modules LMKN LMMN> LEMN L ZRR VBRR VCRR VQRR L WRR VDRR VURR VARR O9SL P URR S H*2 ? VWRX 94 P WU YFI K[@9 URR¥RW@ K[@9 URR¥VD@ K[@9 URR¥VU@ K[@9 URR¥VA@ VZRR VWRR K[@9 URR¥VW@ Symbol Conditions


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    BA124 Diode

    Abstract: BA124
    Text: BA 124 Silizium-Kapazitäts-Diode Silicon capacitance diode Anwendungen: Automatische Nachstimmschaltungen in VHF-Turiern Applications: AFC in VHF tuner Abmessungen in mm Dimensions in mm 02,6 Cl 5 117 0 0,55 I Normgehäuse Case 5 1 A 2 DIN 41880 JEDEC DO 7


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    BA124 f-30MHz BA124 Diode BA124 PDF

    cqx 87

    Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
    Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157


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    AA113 AA117 AA119 BAV17 BAV18 BAV19 BAV20 BAV21 cqx 87 germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175 PDF

    SW0008

    Abstract: BA 85d
    Text: Philips Semiconductors Preliminary specification 18-bit universal bus transceiver 3-State 74ALVCH16501 FEATURES DESCRIPTION • Wide supply voltage range of 1.2V to 3.6V The 74ALVCH16501 is a high-performance CMOS product designed for V cc operation at 2.5V and 3.3V with I/O compatibility up to 5V.


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    18-bit 74ALVCH16501 74ALVCH16501 SV00906 SW0008 BA 85d PDF

    FD6666 diode

    Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
    Text: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5


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    A4/10 A5/62 A5/105 A1000 AA100 AA110 AA111 AA112 AA113 AA114 FD6666 diode diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82 PDF

    BA100 diode

    Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
    Text: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any


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    A4/10 A5/62 A5/105 A1000 AA100 AA110 AA111 AA112 AA113 AA114 BA100 diode BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17 PDF

    Untitled

    Abstract: No abstract text available
    Text: 7^237 5bE D DDMOSRE TOb M S G T H T ~ 5 2 - - $ Ö - q M54/74HC651 M54/74HC652 S C S - T H O M S O N m HC651 OCTAL BUS TRANSCEIVER/REGISTER 3-STATE, INV. HC652 OCTAL BUS TRANSCEIVER/REGISTER (3-STATE) LOW PO W ER DISSIPATIO N lCC = 4 jiA (MAX.) at T a = 2 5 °C


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    M54/74HC651 M54/74HC652 HC651 HC652 54/74LS651/652 M54HCXXXF1 M54/74HC651/652 PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET 1PS74SB23 Schottky barrier diode 1999 Apr 26 Product specification Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification Schottky barrier diode FEATURES 1PS74SB23 PINNING • Ultra fast sw itching speed


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    1PS74SB23 115002/00/01/pp8 PDF

    BA12003

    Abstract: No abstract text available
    Text: BA12001 /BA12002/BA12003/BA12004 BA12001/BA12002 BA12003/BA12004 High-Voltage, High-Current Darlington Transistor Arrays BA12001, BA12002, BA12003, BA12004 ¡ i, $- >J > h- U S S r tjR Ltcrn,mi±^myk<n h 7 > y * £ 7 7U 'r ? 'f o U u-zn'JUtcifommftAffi zmSl z& Wt c


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    BA12001 /BA12002/BA12003/BA12004 BA12001/BA12002 BA12003/BA12004 BA12001, BA12002, BA12003, BA12004 /BA12002/BA12003/BA12004 BA12003 PDF