diode 1079
Abstract: medical application of laser semiconductor laser 1064 nm laser diode
Text: Version 0.90 08.04.2008 page: 1 from 4 DFB/DBR TPL/TPA BROAD AREA LASER GaAs Semiconductor Laser Diode Single Emitter Structure RWE/RWL PRELIMINARY SPECIFICATION BAL BA Laser EYP-BAL-1064-08000-4020-CMT04-0000 General Product Information Product Application
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EYP-BAL-1064-08000-4020-CMT04-0000
diode 1079
medical application of laser
semiconductor laser
1064 nm laser diode
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Laser Diode 808 nm
Abstract: eyp-bal-0808 semiconductor laser
Text: Version 0.90 26.05.2008 page: 1 from 4 DFB/DBR TPL/TPA BROAD AREA LASER GaAs Semiconductor Laser Diode Single Emitter Structure RWE/RWL PRELIMINARY SPECIFICATION BAL BA Laser EYP-BAL-0808-08000-4020-CMT04-0000 General Product Information Product Application
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EYP-BAL-0808-08000-4020-CMT04-0000
Laser Diode 808 nm
eyp-bal-0808
semiconductor laser
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medical application of laser
Abstract: M4000 980 nm laser diode
Text: Version 0.90 08.04.2008 page: 1 from 4 DFB/DBR TPL/TPA BROAD AREA LASER GaAs Semiconductor Laser Diode Single Emitter Structure RWE/RWL PRELIMINARY SPECIFICATION BAL BA Laser EYP-BAL-0980-08000-4020-CMT04-0000 General Product Information Product Application
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EYP-BAL-0980-08000-4020-CMT04-0000
medical application of laser
M4000
980 nm laser diode
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laser diode 635 nm
Abstract: No abstract text available
Text: Version: 1.02 23.02.2007 page: 1 from 4 BROAD AREA LASER GaAs Semiconductor Laser Diode Single Emitter Structure BA Laser EYP-BAL-0653-00500-0710-CMT02-0000 Absolute Maximum Ratings Symbol Unit min typ max Operational Temperature at case TC °C 40 Forward Current
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EYP-BAL-0653-00500-0710-CMT02-0000
laser diode 635 nm
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1064 nm laser diode
Abstract: NTC 10 KOHM
Text: Version: 1.02 14.11.2006 page: 1 from 4 BROAD AREA LASER GaAs Semiconductor Laser Diode Single Emitter Structure BA Laser EYP-BAL-1064-10000-4020-CDL01-0000 Absolute Maximum Ratings Symbol Unit min typ max Storage Temperature TS °C 70 Operational Temperature at case
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EYP-BAL-1064-10000-4020-CDL01-0000
1064 nm laser diode
NTC 10 KOHM
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NTC Thermistor 8 kOhm
Abstract: CW laser diode 808 nm eypbal0808070004020cdl010000 eyp-bal-0808-07000-4020-cdl01-0000 connector 2-pin
Text: Version: 1.02 14.11.2006 page: 1 from 4 BROAD AREA LASER GaAs Semiconductor Laser Diode Single Emitter Structure BA Laser EYP-BAL-0808-07000-4020-CDL01-0000 Absolute Maximum Ratings Symbol Unit min typ max Storage Temperature TS °C 70 Operational Temperature at case
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EYP-BAL-0808-07000-4020-CDL01-0000
NTC Thermistor 8 kOhm
CW laser diode 808 nm
eypbal0808070004020cdl010000
eyp-bal-0808-07000-4020-cdl01-0000
connector 2-pin
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thermistor 102 ntc
Abstract: RESISTOR SIL 102 5 PIN
Text: Version: 1.02 14.11.2006 page: 1 from 4 BROAD AREA LASER GaAs Semiconductor Laser Diode Single Emitter Structure BA Laser EYP-BAL-0980-10000-4020-CDL01-0000 Absolute Maximum Ratings Symbol Unit min typ max Storage Temperature TS °C 70 Operational Temperature at case
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EYP-BAL-0980-10000-4020-CDL01-0000
thermistor 102 ntc
RESISTOR SIL 102 5 PIN
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Untitled
Abstract: No abstract text available
Text: SKKD 701 THYRISTOR BRIDGE,SCR,BRIDGE SEMIPACK 5 IJKL IJJL I P@QQ PUQQ P[QQ I PBQQ P?QQ PVQQ B@QQ BBQQ Symbol Conditions MGCI MGKL 2^' Rectifier Diode Modules SKKD 701 # 2' 23% 4%(&124 2)*.0&'%3 1%'&0 5&*%60&'% 7(%42*2-.* 1%'&0 6(%*.(% 4-)'&4'* +-( ,2/, (%02&5202'8
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Abstract: No abstract text available
Text: SKKT 460, SKKH 460 THYRISTOR BRIDGE,SCR,BRIDGE SEMIPACK 5 Thyristor / Diode Modules SKKT 460 SKKH 460 Features # $%&' ' & *+%( ',(-./, &0.12)2.1 # )2'(23% 4%(&124 2)*.0&'%3 1%'&0 5&*%60&'% 7(%42-.* 1%'&0 6(%*.(% 4-)'&4'* +-( ,2/, (%02&5202'8 9: (%4-/)2;%3< +20% )-= >?@A@B
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Abstract: No abstract text available
Text: SKKD 380 THYRISTOR BRIDGE,SCR,BRIDGE SEMIPACK 3 Rectifier Diode Modules SKKD 380 Features # $%&' ' & *+%( ',(-./, &0.12)2.1 # )2'(23% 4%(&124 2*-0&'%3 1%'&0 5&*%60&'% 7(%42*2-.* 1%'&0 6(%*.(% 4-)'&4'* +-( ,2/, (%02&5202'8 9: (%4-/)2;%3< +20% )-= > ?@ A@B
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Abstract: No abstract text available
Text: SKET 330 THYRISTOR BRIDGE,SCR,BRIDGE SEMIPACK 4 Thyristor Modules SKET 330 Features # $%&' ' & *+%( ',(-./, &0.12)2.1 # )2'(23% 4%(&124 2*-0&'%3 1%'&0 5&*%60&'% 7(%42-.* 1%'&0 6(%*.(% 4-)'&4'* +-( ,2/, (%02&5202'8 9,8(2*'-( :2', &1602+82)/ /&'% ;< (%4-/)2=%3> +20% )-? @ AB CBD
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Abstract: No abstract text available
Text: SKKE 600 THYRISTOR BRIDGE,SCR,BRIDGE SEMIPACK 4 DCEF DCCF D RBLL R?LL BLLL D RBLL R?LL BLLL GHMD J ?LL M N*2 = RSLT U4 J RLL VWQ EXX> ?LLYRB EXX> ?LLYR? EXX> ?LLYBL$Z BBLL BBLL EXX> ?LLYBB$Z Symbol Conditions GHMD *2)= RSLT U4 J RLL VW GHEF UP[ J BA VWT RL 1*
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MG1200FXF1US53
Abstract: 4500a Toshiba IGBT 1200A 3300V YG6260 transistor BA RW diode ba 124 ba ph 20v diode ba qu IGBT GTR IPM sage power switching 15v 1.2a
Text: MG1200FXF1US53 TOSHIBA Target Spec. TOSHIBA GTR MODULE MG1200FXF1US53 S ILICON N-CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Features ●High Input Impedance ●Enhancement Mode ●Electrodes are Isolated from Case EQUIVALENT CIRCUIT
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MG1200FXF1US53
25degC)
MG1200FXF1US53
4500a
Toshiba IGBT 1200A 3300V
YG6260
transistor BA RW
diode ba 124
ba ph 20v diode
ba qu
IGBT GTR IPM
sage power switching 15v 1.2a
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ICE3BR0665JF
Abstract: electrolytic capacitor 2200uf/25V AN-EVALSF3R-ICE3BR0665JF schematic diagram AC to DC converter 100W 3.1v 0.5w ZENER DIODE transformer 100w S10k 25 varistor Epcos n67 material 24v 100w smps ICE3BR0665J
Text: Application Note, V1.0, Sep 2008 AN-EVALSF3R-ICE3BR0665JF 100W 18V SMPS Evaluation Board with CoolSET F3R ICE3BR0665JF Power Management & Supply N e v e r s t o p t h i n k i n g . Edition 2008-09-09 Published by Infineon Technologies Asia Pacific, 8 Kallang Sector,
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AN-EVALSF3R-ICE3BR0665JF
ICE3BR0665JF
ICE3BR0665JF
ICE3BRxx65JF
electrolytic capacitor 2200uf/25V
AN-EVALSF3R-ICE3BR0665JF
schematic diagram AC to DC converter 100W
3.1v 0.5w ZENER DIODE
transformer 100w
S10k 25 varistor
Epcos n67 material
24v 100w smps
ICE3BR0665J
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IEC 947 EN 60947
Abstract: EN 60947-1/2 LED Lamp 1W RJ12 socket thermoflex 901-030 EN 60947-5-5 IEC 60947-5-5 DC-13 RJ12
Text: RAFIX 22 QR 2 General data RAFIX 22QR control component range • For a mounting hole diameter of 22.3 mm to IEC 60947 • 250V/10A max. • Water-jet proof IP65 • 2 collar shapes • The lamps of the pushbuttons can also be replaced from the front • The contact blocks silver or gold contacts snap onto the actuators with a coupling
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50V/10A
M20x1
M25x1
IEC 947 EN 60947
EN 60947-1/2
LED Lamp 1W
RJ12 socket
thermoflex
901-030
EN 60947-5-5
IEC 60947-5-5
DC-13
RJ12
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Untitled
Abstract: No abstract text available
Text: SKET 400 THYRISTOR BRIDGE,SCR,BRIDGE SEMIPACK 4 Thyristor Modules LMKN LMMN> LEMN L ZRR VBRR VCRR VQRR L WRR VDRR VURR VARR O9SL P URR S H*2 ? VWRX 94 P WU YFI K[@9 URR¥RW@ K[@9 URR¥VD@ K[@9 URR¥VU@ K[@9 URR¥VA@ VZRR VWRR K[@9 URR¥VW@ Symbol Conditions
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BA124 Diode
Abstract: BA124
Text: BA 124 Silizium-Kapazitäts-Diode Silicon capacitance diode Anwendungen: Automatische Nachstimmschaltungen in VHF-Turiern Applications: AFC in VHF tuner Abmessungen in mm Dimensions in mm 02,6 Cl 5 117 0 0,55 I Normgehäuse Case 5 1 A 2 DIN 41880 JEDEC DO 7
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BA124
f-30MHz
BA124 Diode
BA124
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cqx 87
Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157
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AA113
AA117
AA119
BAV17
BAV18
BAV19
BAV20
BAV21
cqx 87
germanium
AEG Thyristor T 558 F
TDA 2516
bu208
bf506
la 4430
BF963
TDA1086
transistor bf 175
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SW0008
Abstract: BA 85d
Text: Philips Semiconductors Preliminary specification 18-bit universal bus transceiver 3-State 74ALVCH16501 FEATURES DESCRIPTION • Wide supply voltage range of 1.2V to 3.6V The 74ALVCH16501 is a high-performance CMOS product designed for V cc operation at 2.5V and 3.3V with I/O compatibility up to 5V.
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18-bit
74ALVCH16501
74ALVCH16501
SV00906
SW0008
BA 85d
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FD6666 diode
Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Text: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5
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A4/10
A5/62
A5/105
A1000
AA100
AA110
AA111
AA112
AA113
AA114
FD6666 diode
diode BY100
1N4Q07
BA100 diode
BY164
BB139
BAY38
diode aa119
1S184 diode
1N82
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BA100 diode
Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
Text: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any
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A4/10
A5/62
A5/105
A1000
AA100
AA110
AA111
AA112
AA113
AA114
BA100 diode
BA102
AAY20
B2M1-5
1N2528
PH1021
OA210 diode
DIODE AA116
BB105
GAZ17
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Untitled
Abstract: No abstract text available
Text: 7^237 5bE D DDMOSRE TOb M S G T H T ~ 5 2 - - $ Ö - q M54/74HC651 M54/74HC652 S C S - T H O M S O N m HC651 OCTAL BUS TRANSCEIVER/REGISTER 3-STATE, INV. HC652 OCTAL BUS TRANSCEIVER/REGISTER (3-STATE) LOW PO W ER DISSIPATIO N lCC = 4 jiA (MAX.) at T a = 2 5 °C
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M54/74HC651
M54/74HC652
HC651
HC652
54/74LS651/652
M54HCXXXF1
M54/74HC651/652
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET 1PS74SB23 Schottky barrier diode 1999 Apr 26 Product specification Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification Schottky barrier diode FEATURES 1PS74SB23 PINNING • Ultra fast sw itching speed
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1PS74SB23
115002/00/01/pp8
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BA12003
Abstract: No abstract text available
Text: BA12001 /BA12002/BA12003/BA12004 BA12001/BA12002 BA12003/BA12004 High-Voltage, High-Current Darlington Transistor Arrays BA12001, BA12002, BA12003, BA12004 ¡ i, $- >J > h- U S S r tjR Ltcrn,mi±^myk<n h 7 > y * £ 7 7U 'r ? 'f o U u-zn'JUtcifommftAffi zmSl z& Wt c
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BA12001
/BA12002/BA12003/BA12004
BA12001/BA12002
BA12003/BA12004
BA12001,
BA12002,
BA12003,
BA12004
/BA12002/BA12003/BA12004
BA12003
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