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    DIODE B73 Search Results

    DIODE B73 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE B73 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE L IE bbS3^31 D02b230 ‘IbM D APX BAS45L A LOW LEAKAGE DIODE FOR SURFACE MOUNTING The B A S 4 5 L is a switching diode with a very low reverse current. This S M diode is a leadless diode in a hermetically sealed SO D -8 0 envelope with lead/tin-plated metal


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    D02b230 BAS45L bb53T31 Q02b232 bb53131 Q0Eb233 PDF

    C532 diode

    Abstract: b16/41289
    Text: Technische Information / technical information IGBT-Module IGBT-modules FP50R06W2E3_B11 EasyPIM 2B Modul PressFIT mit Trench/Feldstopp IGBT3 und Emitter Controlled3 Diode EasyPIM™2B module PressFIT with trench/fieldstop IGBT3 and Emitter Controlled3 Diode


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    FP50R06W2E3 14BBFB' A4F32 F223B 1231423567896A4BC3D6E23F 61F7DC C532 diode b16/41289 PDF

    BD3 diode

    Abstract: 6n06e k4366
    Text: Technische Information / technical information IGBT-Module IGBT-modules IFS100B12N3T4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4, Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with trench/fieldstop IGBT4, emitter controlled 4 diode and current sense shunt


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    IFS100B12N3T4 CEE32 1322D14 CEE326 732CF5CD 2313ECEC 1231423567896AB2CDEF1B6 54E36F 4112F BD3 diode 6n06e k4366 PDF

    IFS150B12N3T4_B31

    Abstract: No abstract text available
    Text: Technische Information / technical information IGBT-Module IGBT-modules IFS150B12N3T4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4, Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with trench/fieldstop IGBT4, emitter controlled 4 diode and current sense shunt


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    IFS150B12N3T4 E1322 FF326DC FC26E1 2313F D36134 1231423567896AB 54F36C 4112CD3567896BE IFS150B12N3T4_B31 PDF

    474F3

    Abstract: No abstract text available
    Text: Technische Information / technical information IGBT-Module IGBT-modules IFS75B12N3E4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4, Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with trench/fieldstop IGBT4, emitter controlled 4 diode and current sense shunt


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    IFS75B12N3E4 E1322 FF326DC FC26E1 2313F D36134 1231423567896AB 54F36C 4112CD3567896BE 474F3 PDF

    LTC4098-3.6

    Abstract: 6N16 l436 SXA-01GW-P0.6
    Text: Technische Information / technical information IGBT-Module IGBT-modules IFS75B12N3T4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4, Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with trench/fieldstop IGBT4, emitter controlled 4 diode and current sense shunt


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    IFS75B12N3T4 CEE32 1322D14 CEE326 732CF5CD 2313ECEC 1231423567896AB2CDEF1B6 54E36F 4112F LTC4098-3.6 6N16 l436 SXA-01GW-P0.6 PDF

    BT 69D

    Abstract: FBC 320
    Text: Technische Information / technical information IGBT-Module IGBT-modules FF200R12MT4 EconoDUAL 2 Modul mit schnellem Trench/Feldstop IGBT4 und Emitter Controlled4 Diode EconoDUAL™2 module with fast trench/fieldstop IGBT4 and Emitter Controlled4 diode Vorläufige Daten / preliminary data


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    FF200R12MT4 CBB32 CBB326 223DB 2313BCBC 1231423567896A42BCD6ED3F 54B36 BT 69D FBC 320 PDF

    DIODE C06-15

    Abstract: DIODE C06 15 DIODE C06-13
    Text: Technische Information / technical information IGBT-Module IGBT-modules FS300R17KE3 EconoPACK + Modul mit Trench/Feldstop IGBT³ und EmCon3 Diode EconoPACK™+ module with trench/fieldstop IGBT³ and EmCon3 diode Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter


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    FS300R17KE3 CBB32 CBB326 223DB 2313BCBC A3265C C14BC DIODE C06-15 DIODE C06 15 DIODE C06-13 PDF

    LTC4098-3.6

    Abstract: SXA-01GW-P0.6
    Text: Technische Information / technical information IGBT-Module IGBT-modules FF400R12KE3_B2 62mm C-Serien Modul mit Trench/Feldstopp IGBT3, EmCon High Efficiency Diode und M5 Lastanschluß 62mm C-series module with trench/fieldstop IGBT3 EmCon High Efficiency diode and M5 power terminals


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    FF400R12KE3 CBB32 CBB326 223DB 2313BCBC 1231423567896A42BCD6ED3F 54B36 LTC4098-3.6 SXA-01GW-P0.6 PDF

    Untitled

    Abstract: No abstract text available
    Text: Technische Information / technical information IGBT-Module IGBT-modules DDB6U25N16VR Vorläufige Daten / preliminary data Diode-Gleichrichter / diode-rectifier Höchstzulässige Werte / maximum rated values A325EF36!F"#6$1B%3DE1322E14DDD &' 6 6*+,


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    DDB6U25N16VR 3DE1322E14DD 2313B 32E36 26323D 32B612 4256F 223DB6 6323D 223DB64B6 PDF

    Untitled

    Abstract: No abstract text available
    Text: Technische Information / technical information IGBT-Module IGBT-modules BSM100GB120DLC 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values


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    BSM100GB120DLC CBB32 CBB326 223DB 2313BCBC 3265C C14BC 1231423567896A42BCD6ED3F 54B36 PDF

    Untitled

    Abstract: No abstract text available
    Text: Technische Information / technical information IGBT-Module IGBT-modules BSM150GB120DLC 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values


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    BSM150GB120DLC CBB32 CBB326 223DB 2313BCBC 3265C C14BC 1231423567896A42BCD6ED3F 54B36 PDF

    br - b2d

    Abstract: br b2d
    Text: Technische Information / technical information IGBT-Module IGBT-modules BSM200GB120DLC 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values


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    BSM200GB120DLC CBB32 CBB326 223DB 2313BCBC 3265C C14BC 1231423567896A42BCD6ED3F 54B36 br - b2d br b2d PDF

    LTC4098-3.6

    Abstract: 6n36
    Text: Technische Information / technical information IGBT-Module IGBT-modules BSM300GA120DLCS 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values


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    BSM300GA120DLCS CBB32 CBB326 223DB 2313BCBC 3265C C14BC LTC4098-3.6 6n36 PDF

    br b2d

    Abstract: br- b2d br - b2d LTC4098-3.6
    Text: Technische Information / technical information IGBT-Module IGBT-modules BSM300GB120DLC 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values


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    BSM300GB120DLC CBB32 CBB326 223DB 2313BCBC 3265C C14BC 1231423567896A42BCD6ED3F 54B36 br b2d br- b2d br - b2d LTC4098-3.6 PDF

    Untitled

    Abstract: No abstract text available
    Text: Technische Information / technical information IGBT-Module IGBT-modules DZ3600S17K3_B2 Vorläufige Daten / preliminary data Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values !32C5C361CB3D132214DDD" 2313BCBC36134#6233236B4"3


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    DZ3600S17K3 2313BCBC 223DB 86B56 1231423567896A42BCD6EF 54B36 3567896A42BCD6 PDF

    SKiiP 613 GB

    Abstract: No abstract text available
    Text: s e m ik r d n SKiiP 312 GD 120 - 302 WT Absolute Maximum Ratings | Conditions 11 Values IGBT & Inve rse Diode V ces Operating DC link voltage Vc c 10 Theatsink ~ 25 °C lc Theatsink = 25 °C; tp < 1 ms ICM IGBT & Diode T | 3> AC, 1 min. ViSoi4) Theatsink = 25 °C


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    613bb71 QQ05Q01 0GQ50G3 00G5D04 SKiiP 613 GB PDF

    Untitled

    Abstract: No abstract text available
    Text: s e MIKROn SKiiP 102 GD 120 - 304 WT Absolute Maximum Ratings |Conditions 1> V a lu e s Units IGBT & Inverse Diode V ces Operating DC link voltage Vcc 10 T heatsink = 25 °C lc T heatsin k = 25 °C, tp < 1 ms ICM IGBT & Diode Ti 3’ , AC, 1 min. Visol41


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    613bb71 QQ05Q01 0GQ50G3 00G5D04 PDF

    skiip gb 120

    Abstract: No abstract text available
    Text: s e M IK R D n SKiiP 402 GB 120 - 201 WT Absolute Maximum Ratings | Conditions IGBT & Inve rse Diode Vces Operating DC link voltage Vcc 11* Theatsink = 25 °C lc Theatsink = 25 °C; tp < 1 ms Icm IGBT & Diode T j3 V is o ,4» AC, 1 min. Theatsink = 25 °C


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    613bb71 QQ05Q01 ai3bb71 0GQ50G3 00G5D04 skiip gb 120 PDF

    Untitled

    Abstract: No abstract text available
    Text: AC, 1 min Operating / stor. temperature Q Sym bol vV¡sol 4> —I o o —I SKiiP 3-phase bridge Absolute Maximum Ratings SKiiPPACK C o n d itio n s 1> Values U nits 3000 V -25.+85 °C IGBT and Inverse Diode V ces V cc5 lc Tj 3) If Ifm Ifsm l2t Diode) Driver


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    PDF

    SANSHA

    Abstract: diode b73 SDF4000AA20 SDF4000AA40 SDF4000AA60 diode vrrm 7000 if 7000
    Text: SANSHA ELECTRIC MFG CO 5bE D 7*^1243 00GG4S7 4T7 • S E M J DISC T Y P E DIODE SDF4000AA S D F 4 0 0 0 A A is a Flat Pack Diode designed for high power rectification. • If av = 4000A, V = 600V rrm • High Reliability by pressure mount construction. (Applications)


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    SDF4000AA 00GG4S7 SDF4000AA SDF4000AA20 SDF4000AA40 SDF4000AA60 SANSHA diode b73 SDF4000AA60 diode vrrm 7000 if 7000 PDF

    Untitled

    Abstract: No abstract text available
    Text: s e MIKRD n SKliP 432 GB 120 - 207 CTV Absolute Maximum Ratings Symbol | Conditions11 Values Units 1200 900 400 - 40 . + 150 3000 5 400 800 4300 93 V V A -c V A A A kA2s IGBT & Inverse Diode V ces Vcc 91 lc v> Visol 4 > If If m If s m f t Diode) Operating DC link voltage


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    B7-36 PDF

    skiip gb 120

    Abstract: No abstract text available
    Text: s e MIKROn SKiiP 642 G B 120 - 208 CTV Absolute Maximum Ratings Symbol |Conditions 11 Values Units 1200 900 600 - 4 0 . . . + 150 3000 51 600 1200 4300 93 V V A °C V A A A kAas IGBT & Inverse Diode V ces V c c 91 lc T |3 V»oi4) If Ifm Ifsm f t Diode) Operating D C link voltage


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    B7-38 skiip gb 120 PDF

    UM7108

    Abstract: MICROWAVE DIODE CORP UM7006 UM7000 UM7001 UM7002 UM7100 UM7101 UM7102 UM7200
    Text: 1ICR0SEMI CORP/ lilATERTOülN SDE D •I cJ347cib3 0D1S4Q1 b73 B IU N IT UM7000 SERIES UM7100 SERIES UM7200 SERIES PIN DIODE T - O l - t T Features • Voltage ratings to 1000V (UM7000 • Wide varle.ty of package styles • Rated average power dissipation to 10W


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    UM7000) UM7000 UM7100 UM7200 cJ347cib3 MA02172 UM7108 MICROWAVE DIODE CORP UM7006 UM7001 UM7002 UM7101 UM7102 PDF