Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE L IE bbS3^31 D02b230 ‘IbM D APX BAS45L A LOW LEAKAGE DIODE FOR SURFACE MOUNTING The B A S 4 5 L is a switching diode with a very low reverse current. This S M diode is a leadless diode in a hermetically sealed SO D -8 0 envelope with lead/tin-plated metal
|
OCR Scan
|
D02b230
BAS45L
bb53T31
Q02b232
bb53131
Q0Eb233
|
PDF
|
C532 diode
Abstract: b16/41289
Text: Technische Information / technical information IGBT-Module IGBT-modules FP50R06W2E3_B11 EasyPIM 2B Modul PressFIT mit Trench/Feldstopp IGBT3 und Emitter Controlled3 Diode EasyPIM™2B module PressFIT with trench/fieldstop IGBT3 and Emitter Controlled3 Diode
|
Original
|
FP50R06W2E3
14BBFB'
A4F32
F223B
1231423567896A4BC3D6E23F
61F7DC
C532 diode
b16/41289
|
PDF
|
BD3 diode
Abstract: 6n06e k4366
Text: Technische Information / technical information IGBT-Module IGBT-modules IFS100B12N3T4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4, Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with trench/fieldstop IGBT4, emitter controlled 4 diode and current sense shunt
|
Original
|
IFS100B12N3T4
CEE32
1322D14
CEE326
732CF5CD
2313ECEC
1231423567896AB2CDEF1B6
54E36F
4112F
BD3 diode
6n06e
k4366
|
PDF
|
IFS150B12N3T4_B31
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules IFS150B12N3T4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4, Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with trench/fieldstop IGBT4, emitter controlled 4 diode and current sense shunt
|
Original
|
IFS150B12N3T4
E1322
FF326DC
FC26E1
2313F
D36134
1231423567896AB
54F36C
4112CD3567896BE
IFS150B12N3T4_B31
|
PDF
|
474F3
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules IFS75B12N3E4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4, Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with trench/fieldstop IGBT4, emitter controlled 4 diode and current sense shunt
|
Original
|
IFS75B12N3E4
E1322
FF326DC
FC26E1
2313F
D36134
1231423567896AB
54F36C
4112CD3567896BE
474F3
|
PDF
|
LTC4098-3.6
Abstract: 6N16 l436 SXA-01GW-P0.6
Text: Technische Information / technical information IGBT-Module IGBT-modules IFS75B12N3T4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4, Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with trench/fieldstop IGBT4, emitter controlled 4 diode and current sense shunt
|
Original
|
IFS75B12N3T4
CEE32
1322D14
CEE326
732CF5CD
2313ECEC
1231423567896AB2CDEF1B6
54E36F
4112F
LTC4098-3.6
6N16
l436
SXA-01GW-P0.6
|
PDF
|
BT 69D
Abstract: FBC 320
Text: Technische Information / technical information IGBT-Module IGBT-modules FF200R12MT4 EconoDUAL 2 Modul mit schnellem Trench/Feldstop IGBT4 und Emitter Controlled4 Diode EconoDUAL™2 module with fast trench/fieldstop IGBT4 and Emitter Controlled4 diode Vorläufige Daten / preliminary data
|
Original
|
FF200R12MT4
CBB32
CBB326
223DB
2313BCBC
1231423567896A42BCD6ED3F
54B36
BT 69D
FBC 320
|
PDF
|
DIODE C06-15
Abstract: DIODE C06 15 DIODE C06-13
Text: Technische Information / technical information IGBT-Module IGBT-modules FS300R17KE3 EconoPACK + Modul mit Trench/Feldstop IGBT³ und EmCon3 Diode EconoPACK™+ module with trench/fieldstop IGBT³ and EmCon3 diode Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter
|
Original
|
FS300R17KE3
CBB32
CBB326
223DB
2313BCBC
A3265C
C14BC
DIODE C06-15
DIODE C06 15
DIODE C06-13
|
PDF
|
LTC4098-3.6
Abstract: SXA-01GW-P0.6
Text: Technische Information / technical information IGBT-Module IGBT-modules FF400R12KE3_B2 62mm C-Serien Modul mit Trench/Feldstopp IGBT3, EmCon High Efficiency Diode und M5 Lastanschluß 62mm C-series module with trench/fieldstop IGBT3 EmCon High Efficiency diode and M5 power terminals
|
Original
|
FF400R12KE3
CBB32
CBB326
223DB
2313BCBC
1231423567896A42BCD6ED3F
54B36
LTC4098-3.6
SXA-01GW-P0.6
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules DDB6U25N16VR Vorläufige Daten / preliminary data Diode-Gleichrichter / diode-rectifier Höchstzulässige Werte / maximum rated values A325EF36!F"#6$1B%3DE1322E14DDD &' 6 6*+,
|
Original
|
DDB6U25N16VR
3DE1322E14DD
2313B
32E36
26323D
32B612
4256F
223DB6
6323D
223DB64B6
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules BSM100GB120DLC 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values
|
Original
|
BSM100GB120DLC
CBB32
CBB326
223DB
2313BCBC
3265C
C14BC
1231423567896A42BCD6ED3F
54B36
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules BSM150GB120DLC 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values
|
Original
|
BSM150GB120DLC
CBB32
CBB326
223DB
2313BCBC
3265C
C14BC
1231423567896A42BCD6ED3F
54B36
|
PDF
|
br - b2d
Abstract: br b2d
Text: Technische Information / technical information IGBT-Module IGBT-modules BSM200GB120DLC 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values
|
Original
|
BSM200GB120DLC
CBB32
CBB326
223DB
2313BCBC
3265C
C14BC
1231423567896A42BCD6ED3F
54B36
br - b2d
br b2d
|
PDF
|
LTC4098-3.6
Abstract: 6n36
Text: Technische Information / technical information IGBT-Module IGBT-modules BSM300GA120DLCS 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values
|
Original
|
BSM300GA120DLCS
CBB32
CBB326
223DB
2313BCBC
3265C
C14BC
LTC4098-3.6
6n36
|
PDF
|
|
br b2d
Abstract: br- b2d br - b2d LTC4098-3.6
Text: Technische Information / technical information IGBT-Module IGBT-modules BSM300GB120DLC 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values
|
Original
|
BSM300GB120DLC
CBB32
CBB326
223DB
2313BCBC
3265C
C14BC
1231423567896A42BCD6ED3F
54B36
br b2d
br- b2d
br - b2d
LTC4098-3.6
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules DZ3600S17K3_B2 Vorläufige Daten / preliminary data Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values !32C5C361CB3D132214DDD" 2313BCBC36134#6233236B4"3
|
Original
|
DZ3600S17K3
2313BCBC
223DB
86B56
1231423567896A42BCD6EF
54B36
3567896A42BCD6
|
PDF
|
SKiiP 613 GB
Abstract: No abstract text available
Text: s e m ik r d n SKiiP 312 GD 120 - 302 WT Absolute Maximum Ratings | Conditions 11 Values IGBT & Inve rse Diode V ces Operating DC link voltage Vc c 10 Theatsink ~ 25 °C lc Theatsink = 25 °C; tp < 1 ms ICM IGBT & Diode T | 3> AC, 1 min. ViSoi4) Theatsink = 25 °C
|
OCR Scan
|
613bb71
QQ05Q01
0GQ50G3
00G5D04
SKiiP 613 GB
|
PDF
|
Untitled
Abstract: No abstract text available
Text: s e MIKROn SKiiP 102 GD 120 - 304 WT Absolute Maximum Ratings |Conditions 1> V a lu e s Units IGBT & Inverse Diode V ces Operating DC link voltage Vcc 10 T heatsink = 25 °C lc T heatsin k = 25 °C, tp < 1 ms ICM IGBT & Diode Ti 3’ , AC, 1 min. Visol41
|
OCR Scan
|
613bb71
QQ05Q01
0GQ50G3
00G5D04
|
PDF
|
skiip gb 120
Abstract: No abstract text available
Text: s e M IK R D n SKiiP 402 GB 120 - 201 WT Absolute Maximum Ratings | Conditions IGBT & Inve rse Diode Vces Operating DC link voltage Vcc 11* Theatsink = 25 °C lc Theatsink = 25 °C; tp < 1 ms Icm IGBT & Diode T j3 V is o ,4» AC, 1 min. Theatsink = 25 °C
|
OCR Scan
|
613bb71
QQ05Q01
ai3bb71
0GQ50G3
00G5D04
skiip gb 120
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AC, 1 min Operating / stor. temperature Q Sym bol vV¡sol 4> —I o o —I SKiiP 3-phase bridge Absolute Maximum Ratings SKiiPPACK C o n d itio n s 1> Values U nits 3000 V -25.+85 °C IGBT and Inverse Diode V ces V cc5 lc Tj 3) If Ifm Ifsm l2t Diode) Driver
|
OCR Scan
|
|
PDF
|
SANSHA
Abstract: diode b73 SDF4000AA20 SDF4000AA40 SDF4000AA60 diode vrrm 7000 if 7000
Text: SANSHA ELECTRIC MFG CO 5bE D 7*^1243 00GG4S7 4T7 • S E M J DISC T Y P E DIODE SDF4000AA S D F 4 0 0 0 A A is a Flat Pack Diode designed for high power rectification. • If av = 4000A, V = 600V rrm • High Reliability by pressure mount construction. (Applications)
|
OCR Scan
|
SDF4000AA
00GG4S7
SDF4000AA
SDF4000AA20
SDF4000AA40
SDF4000AA60
SANSHA
diode b73
SDF4000AA60
diode vrrm 7000 if 7000
|
PDF
|
Untitled
Abstract: No abstract text available
Text: s e MIKRD n SKliP 432 GB 120 - 207 CTV Absolute Maximum Ratings Symbol | Conditions11 Values Units 1200 900 400 - 40 . + 150 3000 5 400 800 4300 93 V V A -c V A A A kA2s IGBT & Inverse Diode V ces Vcc 91 lc v> Visol 4 > If If m If s m f t Diode) Operating DC link voltage
|
OCR Scan
|
B7-36
|
PDF
|
skiip gb 120
Abstract: No abstract text available
Text: s e MIKROn SKiiP 642 G B 120 - 208 CTV Absolute Maximum Ratings Symbol |Conditions 11 Values Units 1200 900 600 - 4 0 . . . + 150 3000 51 600 1200 4300 93 V V A °C V A A A kAas IGBT & Inverse Diode V ces V c c 91 lc T |3 V»oi4) If Ifm Ifsm f t Diode) Operating D C link voltage
|
OCR Scan
|
B7-38
skiip gb 120
|
PDF
|
UM7108
Abstract: MICROWAVE DIODE CORP UM7006 UM7000 UM7001 UM7002 UM7100 UM7101 UM7102 UM7200
Text: 1ICR0SEMI CORP/ lilATERTOülN SDE D •I cJ347cib3 0D1S4Q1 b73 B IU N IT UM7000 SERIES UM7100 SERIES UM7200 SERIES PIN DIODE T - O l - t T Features • Voltage ratings to 1000V (UM7000 • Wide varle.ty of package styles • Rated average power dissipation to 10W
|
OCR Scan
|
UM7000)
UM7000
UM7100
UM7200
cJ347cib3
MA02172
UM7108
MICROWAVE DIODE CORP
UM7006
UM7001
UM7002
UM7101
UM7102
|
PDF
|