B5003
Abstract: 05B5
Text: BAS40.B5000 / B5003 Silicon Schottky Diode • General-purpose diode for high-speed switchhing • Circuit protected • Voltage clamping • High-level detecting and mixing • Improved operating temperature range due to extra-low thermal resistance see attached Forward current curves
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BAS40.
B5000
B5003
B5000:
B5003:
BAS40
BAS40-04
BAS40-05
BAS40-06
BAS40
B5003
05B5
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BAS70-04
Abstract: BAS 40 B5003 73S SOT23 75S SOT23 schottky 73s
Text: BAS70.B5000 / B5003 Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing • Improved operating temperature range due to extra-low thermal resistance see attached Forward current curves
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BAS70.
B5000
B5003
B5000:
10kreels,
B5003:
BAS70
BAS70-04
BAS70-05
BAS70-06
BAS70-04
BAS 40 B5003
73S SOT23
75S SOT23
schottky 73s
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R222 smd
Abstract: RA516-1 2007-000162 RA523-1 C627 SOT-23 smd R540 63MIL d516 gp SMD R618 SMD C548
Text: - This Document can not be used without Samsung's authorization - 10 Schematic Material List 10-1 Mainboard Parts List CODE LOCATION CATALOG DESCRIPTION 0401-000191 D16 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP 0401-000191 D14 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP
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CA-001175
BA41-00418A
BA62-00194A
BA62-00306A
BA68-40005L
120OHM
143OHM/132MHZ
213OHM/390MHZ,
R222 smd
RA516-1
2007-000162
RA523-1
C627 SOT-23
smd R540
63MIL
d516 gp
SMD R618
SMD C548
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samsung r540
Abstract: Samsung R590 R721-R725 C732 SMD 10000NF R616 R617 R714-R715 samsung r580 b16 r649 Smd q535
Text: - This Document can not be used without Samsung’s authorization - 10. Part List 1 System Board Main System LOCATION SEC CODE NAME SPECIFICATION QUANTITY 0401-000191 DIODE-SWITCHING MMBD4148,75V,200mA,SOT-23,TP 6 D512 0402-001024 DIODE-RECTIFIER MBR0540,40V,0.5A,SOD-123,TP
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ZD500
QF500
RHU002N06
200MA
OT-323
F820P
33x33mm
500MHz
K4J52324QC
512Mbit
samsung r540
Samsung R590
R721-R725
C732 SMD
10000NF
R616 R617
R714-R715
samsung r580
b16 r649
Smd q535
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74F1056
Abstract: 74F1056SC C1995 M16A b50 diode
Text: 74F1056 8-Bit Schottky Barrier Diode Array General Description Features The ’F1056 is an 8-bit Schottky barrier diode array designed to be employed as termination on the inputs to memory bus lines or CLOCK lines This device is designed to suppress negative transients caused by line reflections switching
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74F1056
F1056
74F1056SC
16-Lead
74F1056
74F1056SC
C1995
M16A
b50 diode
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B500C1000
Abstract: Semikron SKBa
Text: SKBa B500C1000L5B power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter !/012 !!1&$ ! ! .;, +, Symbol '$& @ Avalanche Bridge Rectifiers SKBa B500C1000L5B
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B500C1000L5B
B500C1000
Semikron SKBa
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Zurich E2
Abstract: b50c laser diode bar Bookham bookham LASER
Text: Data sheet 50W 806nm High Power Bare Laser Diode Bar B50C-806-01 Features • Bare 10mm x 1.2mm laser bar • 50W operating power • Highly reliable single quantum well MBE structure • Excellent solderability The Bookham Technology B50C-806-01 bare laser bar
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806nm
B50C-806-01
B50C-806-01
Zurich E2
b50c
laser diode bar
Bookham
bookham LASER
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Semikron SKB B500
Abstract: semikron B500 Semikron SKBa skb b500/445-4 semikron SKB b500/445-4
Text: SKBa B500/445-4 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter ./#01 .0' 3 * 4 /5 3 6* 7 1 . . 5$ -:+ *+ ;# #*+<66*=6 Symbol Conditions
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B500/445-4
Semikron SKB B500
semikron B500
Semikron SKBa
skb b500/445-4
semikron SKB b500/445-4
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Semikron SKBa
Abstract: No abstract text available
Text: SKBa B500C1500 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter !/012 !!1&$ ! ! .;, +, Symbol SKBa B500C1500 .2 4 7+ 8% " .2 4 ; 8% "
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B500C1500
Semikron SKBa
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mska
Abstract: Semikron MSK B B500 bridge B500/6700
Text: MSKa B500/445-1,5 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter -./01 -0$" 3 4 .5 3 6 7 1 + 0 ,:* )* 5& $"; /)*<66)=,#) 8% 9 ,>*
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B500/445-1
mska
Semikron MSK B
B500 bridge
B500/6700
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1KAB80E
Abstract: 1KAB100E 1KAB10E 1KAB20E 1KAB40E 1KAB60E B125C1000 B250C1000 B40C1000 B80C1000
Text: 1KAB-E Series Vishay High Power Products Single Phase Rectifier Bridge, 1.2 A FEATURES • Ease of assembly, installation, inventory RoHS • High surge rating COMPLIANT • Compact • RoHS compliant DESCRIPTION D-38 A 1.2 A diode bridge rectifier assembly designed for new
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18-Jul-08
1KAB80E
1KAB100E
1KAB10E
1KAB20E
1KAB40E
1KAB60E
B125C1000
B250C1000
B40C1000
B80C1000
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Untitled
Abstract: No abstract text available
Text: • b 1353131 0024433 b50 « A P X N A HER PHILIPS/DISCRETE BBY42 b?E » J V V.H.F. VARIABLE CAPACITANCE DIODE The B B Y 4 2 is a variable capacitance diode in a microminiature plastic envelope SOT-23. It is intended for use in v.h.f. T V tuners and C A T V applications using S M D technology.
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BBY42
OT-23.
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b49 diode
Abstract: ESJC04-05 ESJC04 F151 T760 micro wave oven esjc0405
Text: ESJC 0 4 5kv : Outline Drawings HIGH VOLTAGE SILICON DIODE ESJC04(*, ESJC04 is high reliability and high current capability type resin molded high voltage silicon diode which is sealed a multilayed mesa type silicon chip by epoxy resin. Features • 'm Small size
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ESJC04
EaTS30S3
I95t/R89
Shl50
b49 diode
ESJC04-05
F151
T760
micro wave oven
esjc0405
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Untitled
Abstract: No abstract text available
Text: S IE M E N S Silicon Low Leakage Diode Array BAV 199 • Low-leakage applications • Medium speed switching times • Connected in series Type Marking Ordering Code tape and reel B A V 199 JY s Q62702-A921 Pin Configuration Package1) 3 SOT-23 EHA07005 Maximum Ratings per Diode
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Q62702-A921
OT-23
EHA07005
fl535bOS
D1ED421
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1mb50-090a
Abstract: ERD65-090 H150 1mb60-090
Text: ERD65-090 30A * ± 'J K rHi FAST RECOVERY DIODE : Features • ¡ftMJ± High Voltage • Low forward Voltage drop. #/jvgu/\°.y4-—v Small Package Connection Diagram : Applications • W /ifc&tg ®® Voltage Resonance Power Supply Induction Heater • 1M B50-090A, 1 M B 6 0 -0 9 0 £ *fc f# ffl
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ERD65-090
1MB50-090A,
1MB60-0903
1mb50-090a
H150
1mb60-090
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1S44
Abstract: 1N661 1S920 1N461A 1N462A 1N463A 1N659 1N660 1S921
Text: Diode Data NATL SEMI CONO DISCRETE H E D | b501130 0037003 0 | General Purpose Diodes Glass Package Package No. V rrm V Min 1N461A DO-35 1N462A 1N463A Device No. vF c *rr ns Max •r nA @ Max Vr V 30 500 25 1.0 100 D2 DO-35 70 500 60 1.0 100 D2 DO-35 200
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b501130
T-01-01
1N461A
DO-35
1N462A
1N463A
1N659
1S44
1N661
1S920
1N660
1S921
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1S920
Abstract: 1n659 diode BA318 1S44 1N461A 1N462A 1N463A 1N659 1N660 1N661
Text: Diode Data NATL SEMICOND DISCRETE D | h e b5013.30 DQ37Q03 D | T -0 1 -0 1 500 25 1.0 100 D2 70 500 60 1.0 100 D2 175 1.0 100 1.0 6.0 300 Note 1 D4 6.0 300 (Note 1) D1 300 (Note 1) D1 8 (Note 2) D4 1N461A DO-35 1N463A 1N659 1N660 DO-35 DO-35 DO-35 200 60
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b5013Â
DQ37Q03
T-01-01
1N461A
DO-35
1N462A
1N463A
1N659
1S920
1n659 diode
BA318
1S44
1N660
1N661
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bav70
Abstract: BAV74
Text: BAV70 / BAV74 tß Discrete POWER & Signal Technologies National Semiconductor" BAV70 / 74 High Conductance Ultra Fast Diode Sourced from Process 1P. See BAV99 for characteristics. Absolute Maximum Ratings* Value Units Average Rectified Current 70 50 200 V
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BAV70
BAV74
BAV99
BAV74
BAV70
100uA
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A5 GNE mosfet
Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA
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1PHX11136Q-14
A5 GNE mosfet
jo3501
2N4427 equivalent bfr91
2N503
2N5160 MOTOROLA
BF431
BFR96
HY 1906 transistor
jo2015
kd 2060 transistor
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE 151MQ30 151MQ40 166A/30— 40V FEATURES o Hermetically Sealed Case • High Reliability Device 0 Low Power Loss, High Efficiency # High Surge Capability MAXIMUM RATIN GS \ type Voltage Rating ♦ 151MQ40 + 151MQ30 Unit Symbol\ Repetitive Peak
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151MQ30
151MQ40
66A/30â
151MQ30
bbl5123
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Untitled
Abstract: No abstract text available
Text: E O PLASTIC SIDELOOKER PAIR OPTOELECTRONICS H23A1/2 PACKAGE DIMENSIONS DESCRIPTION I SECTION X-X LEAD PROFILE The H23A is a matched emitter-detector pair which consists of a gallium arsenide infrared emitting diode and a silicon phototransistor. The clear epoxy packaging
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H23A1/2
ST1342
ST1220
ST1221
ST1222
4bbfl51
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Untitled
Abstract: No abstract text available
Text: TRANSISTOR MODULES- SQQ300BA60 U L;E 76102 M ) is a Darlington power transistor module with a , high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode (trr: 200ns). The mounting base of the module is electrically isolated
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SQQ300BA60
200ns)
hrEfe750
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Untitled
Abstract: No abstract text available
Text: DH0035/DH0035C & National Semiconductor DH0035/DH0035C PIN Diode Driver General Description The DH0035/DH0035C is a high speed digital driver de signed to drive PIN diodes in RF modulators and switches. The device is used in conjunction with an input buffer such
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DH0035/DH0035C
DH0035/DH0035C
DM783O/OM803O
DM5440/DM7440.
delay--10
AN-49
DH0035
DH0035C
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J127B
Abstract: No abstract text available
Text: o Wideband, Low Power g o Monolithic Op Amp tip ] Comlinear ÏÜUJCorporation •t* CT> CLC406 APPLICATIONS: • video distribution amp • HDTV amplifier • flash A/D driver • D/A transimpedance buffer • pulse amplifier • photo-diode amp • LAN amplifier
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CLC406
CLC406
160MHz
OA-15.
GlG40flS
J127B
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