zener diode A36
Abstract: zener diode A29 ZENER A29 a37 zener diode ZENER A26 a36 zener ZENER A34 CAZ23C24 a59 zener diode ZENER A26
Text: Silicon-Based Technology Corp. Small-Signal Zener Diodes CAZ23C2V7 – CAZ23C51 Features and Advantages: z Surface mount package for automatic assembly process z High precision Zener voltage VZ (Note3.) z Small Zener diode dynamic impedance(ZZT) z Low standby reverse current(VR) (Note4.)
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CAZ23C2V7
CAZ23C51
OT-23
MIL-STD-202,
J-STD-020C
CAZ23CXVX
zener diode A36
zener diode A29
ZENER A29
a37 zener
diode ZENER A26
a36 zener
ZENER A34
CAZ23C24
a59 zener diode
ZENER A26
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zener diode A29
Abstract: ZENER A29 a37 zener a23 zener zener diode A36 diode ZENER A26 A26 zener a36 zener marking codes A32 a59 zener diode
Text: Silicon-Based Technology Corp. Small-Signal Zener Diodes CAZ59C2V7 – CAZ59C51 Features and Advantages: z Surface mount package for automatic assembly process z High precision Zener voltage VZ (Note3.) z Small Zener diode dynamic impedance(ZZT) z Low standby reverse current(VR) (Note4.)
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CAZ59C2V7
CAZ59C51
SC-59
MIL-STD-202,
J-STD-020C
CAZ59CXVX
zener diode A29
ZENER A29
a37 zener
a23 zener
zener diode A36
diode ZENER A26
A26 zener
a36 zener
marking codes A32
a59 zener diode
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free transistor equivalent book 2sc
Abstract: uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002
Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 RF and Microwave Devices 7 Optical Device 8 Index 9 April 1999 The export of these products from Japan is regulated by the Japanese government. The export of some or all of
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X10679EJHV0SG00
free transistor equivalent book 2sc
uPA1556AH
The Japanese Transistor Manual 1981
samsung UHF/VHF TV Tuner
MOSFET cross-reference 2sk
PD431000A-X
upper arm digital sphygmomanometer circuit diagram
PD72001
uPC1237
uPC 2002
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lg crt monitor circuit diagram
Abstract: micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY
Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 October 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of
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X10679EJGV0SG00
lg crt monitor circuit diagram
micro servo 9g
samsung lcd tv power supply diagrams
MP 1008 es
uPa2003
8049 microcontroller APPLICATION
LG lcd tv tuner
pioneer car dvd service manual
lg washing machine circuit diagram
8ch pnp DARLINGTON TRANSISTOR ARRAY
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CA3-9-10
Abstract: Sprecher Schuh ca3 Sprecher Schuh ca3-23-10 Sprecher Schuh CA3-12-10 Sprecher Schuh ca3-16-10 CA3-12-10 Sprecher Schuh TE404 ca3 contactor CA3-16-10
Text: Accessories – Field Installable CA7 Contactors Contact Block Description NO NC Contact Arrangement Standard Contacts Catalog For use with. Number Bifurcated Contacts Catalog Price Number ➋ Price 51 61 2 CA7 all CS7-PV-02 27 CS7-PVB-02 42 CA7-30.97-✱-00
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CS7-PVB-02
CA7-PV-02
CA7-PVB-02
CS7-PV-11
CS7-PVB-11
CA7-30.
CA7-PV-11
CA7-PVB-11
CA7-PV-S11
CA7-PVB-S11
CA3-9-10
Sprecher Schuh ca3
Sprecher Schuh ca3-23-10
Sprecher Schuh CA3-12-10
Sprecher Schuh ca3-16-10
CA3-12-10
Sprecher Schuh
TE404
ca3 contactor
CA3-16-10
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Hamamatsu streak c4334
Abstract: C5094 C1808-03 C4334-01 C4334 C4792 A5760 C4792-01 fluorescence C4780
Text: PICOSECOND FLUORESCENCE LIFETIME MEASUREMENT SYSTEM C4780 Captures fluorescence phenomena with 5 ps temporal resolution using 2D photon counting method. Enables simultaneous fluorescence lifetime analysis and time-resolved spectrophotometry. 1 Directly captures time variations of laser-excited
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C4780
lig8152-375-0,
SE-171-41
SSCS1018E06
MAY/99
Hamamatsu streak c4334
C5094
C1808-03
C4334-01
C4334
C4792
A5760
C4792-01
fluorescence
C4780
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HP 4066
Abstract: W174DIP-1 w174dip-5 MAGNECRAFT W174DIP-3 W174dip-7 425xbx magnetic Contactor 24VDC W78ARPCX-5 W172DIP-5 W174DIP-8
Text: RELAYS A283 SERIES SQUARE BASE RELAY 3-WAY TERMINAL 10 AMP GENERAL PURPOSE The A283 Serie is a versatile and highly reliable general purpose, 10 Amp relay. It has a 3-way terminal design which allows the user to make solder or 0.187 inch quick connections or use the relay as a plug-in device. Since
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600VAC
WM60AAA-120A
120VAC
WM60AAA-240A
240/60VAC
220/50VAC
WM60AAA-24D
24VDC
WM60B-120A
HP 4066
W174DIP-1
w174dip-5
MAGNECRAFT W174DIP-3
W174dip-7
425xbx
magnetic Contactor 24VDC
W78ARPCX-5
W172DIP-5
W174DIP-8
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md7130
Abstract: smd DIODE B34 diode u2 a54 smd a60 B49 diode smd B34 diode smd B45 diode smd smd b38 B34 SMD Transistor DP83816
Text: 8 7 6 5 4 3 2 1 D D PME Header PCI CLK 33 Mhz Magnetics PCI BUS C AD(31:0) TP RJ45 C MacPHYTERII DP83816 25 MHz XTAL PCI Interface B EEPROM I'face B BIOS ROM These schematics are provided for reference only. For any designs based on these schematics always contact National Semiconductor Corporation BEFORE initiating PCB
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DP83816
10/100M
001uF
C100p-1808
DP83816
md7130
smd DIODE B34
diode u2 a54
smd a60
B49 diode smd
B34 diode smd
B45 diode smd
smd b38
B34 SMD Transistor
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diode u2 a54
Abstract: diode c25 B49 diode smd Diode 133 B34 smd b38 smd DIODE B34 A29 SMD B45 diode smd DP83816 MA6 diode
Text: 8 7 6 5 4 3 2 1 D D PME Header PCI CLK 33 Mhz Magnetics PCI BUS C AD(31:0) TP C RJ45 MacPHYTERII DP83816 25 MHz XTAL PCI Interface B EEPROM I'face B BIOS ROM SERIAL EEPROM A A National Semiconductor - Wired Communications Group Title 10/100 Mb/s Ethernet MacPHYTERII DP83816 Demo Board (Amber)
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DP83816
DP83816
10/100M
001uF
C100p-1808
diode u2 a54
diode c25
B49 diode smd
Diode 133 B34
smd b38
smd DIODE B34
A29 SMD
B45 diode smd
MA6 diode
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A5760
Abstract: C1808-03
Text: Picosecond Fluorescence Lifetime Measurement System C11200 Captures fluorescence phenomena with 5 ps temporal resolution using 2D photon counting method. Enables simultaneous fluorescence lifetime analysis and time-resolved spectrophotometry. Directly captures temporal variations of laser-excited
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C11200
SE-164
B1201
SHSS0008E05
DEC/2013
A5760
C1808-03
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C10627-01
Abstract: No abstract text available
Text: Picosecond Fluorescence Lifetime Measurement System C11200 Captures fluorescence phenomena with 5 ps temporal resolution using 2D photon counting method. Enables simultaneous fluorescence lifetime analysis and time-resolved spectrophotometry. Directly captures temporal variations of laser-excited
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C11200
SHSS0008E04
APR/2012
C10627-01
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Untitled
Abstract: No abstract text available
Text: DIODE MODULE f.R.d FRG25BA60 U L;E76102(M ) F R G 2 5 B A 6 0 is a high speed isolated diode module designed for high power switching application. F R G 2 5 B A 6 0 is suitable for high frequency application requiring low loss and high speed control. •
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FRG25BA60
E76102
100ns
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Untitled
Abstract: No abstract text available
Text: DIODE MODULE f .r .d. FRS20QAA40/60 UL;E76102(M ) F R S 2 0 0 A A is a high speed isolated diode module designed for high power switching application. F R S 2 0 0 A A is suitable for high frequency application requiring low loss and high speed control. 93.5MAX
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FRS20QAA40/60
E76102
200ns
FRS200AA40/60
7T11243
DD0202A
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MHW721A2
Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA
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1PHX11136Q-14
MHW721A2
13001 S 6D TRANSISTOR
atv5030* motorola
2N5591 MOTOROLA
13001 6D TRANSISTOR
BGY41
MHW710-1
construction linear amplifier 2sc1945
7119 amperex
bf503
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ERD03
Abstract: diode a57
Text: ERD03 3 .OA * ± ' j Outline Drawings GENERAL USE RECTIFIER DIODE -w f*7.5 *1.8 1 — 24MIN — 10 24 MIN— • 4 * A : Features • H igh current • f c f S f i l li High reliability ■ S tK I Marking ! Applications A 5 —3 —K : Ö Color code : White
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ERD03
diode a57
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ERD03
Abstract: STK 200
Text: ERD03 3 .OA * ± ' j Outline Drawings GENERAL USE RECTIFIER DIODE -w f*7.5 *1.8 1 — 24MIN — 10 24 MIN— • 4 * A : Features • H igh current • f c f S f i l li High reliability ■ S tK I Marking ! Applications A 5 —3 —K : Ö Color code : White
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ERD03
STK 200
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Untitled
Abstract: No abstract text available
Text: ERD03 3 .OA * ± ' j Outline D raw ings GENERAL USE RECTIFIER DIODE -w f* 7 .5 * 1 .8 1 — 2 4 M IN — 10 2 4 M IN — • 4 * A : Features • H igh current • f c f S f i l li High reliability ■ S tK I M arking ! Applications A 5 —3 —K : Ö Color code : White
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ERD03
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fast recovery diode 600v 120a double
Abstract: A430 A430A A430B A437A A437B A570 A570A A570B A596
Text: R E C T IF IE R S 183 750 TO 1500 AMPERES GE T Y P E JE D E C S PEC IFICATIO N S_ . Max. average forward current FM AV (1 phase operation) (A) A437 A596 A430 A 540 A696 A570 A640 - - - - - - - 750 1000 1000 1000 1500 1500 65 126 100 - 80
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A437A
A430A
A570A
A437B
A430B
A570B
A437C
A430C
A570C
A437D
fast recovery diode 600v 120a double
A430
A570
A570B
A596
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Untitled
Abstract: No abstract text available
Text: PD-9.1010 International i »r R e ctifie r IRF740S HEXFET Power M OSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Description
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IRF740S
SMD-220
SMD-220
D-6380
4A55452
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bd7995
Abstract: P8243 178M15 transistor b492 TRANSISTOR BJ 131-6 P8035 sk 7443 1334 diode LM1456 LM 8361
Text: H F To X 8366IT U N E B Issue 2/8534 STR910A B26000 2000 General Wiring Diagram Figure 10.1 +28 V sense) GROUND Meter Batt. sense + Sense Isolated Ground Batt. GND O FF 28 V O FF (T X O F F ) Relays K4, K1 & K2 BATT. MODE »DC» Relays K5, K6 +8 V in GROUND
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8366IT
STR910A
B26000
B26050
B2G010
B26010
B2701D
9SM102/V4T7
bd7995
P8243
178M15
transistor b492
TRANSISTOR BJ 131-6
P8035
sk 7443
1334 diode
LM1456
LM 8361
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Untitled
Abstract: No abstract text available
Text: SOLITRON DEVICES INC ^rniitron 4ßE D devices.inc. m MfrS# a K A fi& i'a « ® » :'W e S & s ß3bflbGE DDD35Ö7 TIS « S O D PH yyyu a <ü a 1 ailOQ P-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain-source Volt. l VDSS Drain-Gate Voltage
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DDD35Ã
00A/jJLS
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SDF9240
Abstract: BA57
Text: Æutron PRODUCT DEVICES.INC. P-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER' SYMBOL Drain-source Vo 1t . 1 Drain-Gate Vo 1tage ( R g s - I . O M o ) (1) Gate-Source Voltage Con t inuous Drain Current Continuous (Tc = 25 C) Drain Current Pulsed(3)
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-200V
SDF9240
MIL-S-19500
BA57
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IRF 544 N MOSFET
Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no
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SF1154
Abstract: A430 A430A A430B A437A A437B A570 A570A A570B A596
Text: RECTIFIERS 183 750 TO 1500 AMPERES GE TYPE JEDEC SPECIFICATIONS_ . Max. average forward current FM A V (1 phase operation) (A) A437 A 596 A430 A 540 A 696 A 570 A 640 - - - - - - - 750 1000 1000 1000 1500 1500 65 126 100 - 80 80 750 -j >T c - (°C)
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A437A
A430A
A570A
A437B
A430B
A570B
A437C
A430C
A570C
A437D
SF1154
A430
A570
A570B
A596
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